Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL configurations. Can be used in manual gain control, ALC and modulation BROADBAND RF POWER MOSFET circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W Gain — 12 dB Efficiency — 60% 2 • Low Thermal Resistance • Low Crss — 10 pF Typ @ VDS = 28 Volts • 5, 8 1, 4Ruggedness Tested at Rated O...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line N–Channel Enhancement Mode MOSFET

Designed for broadband commercial and military applications up to 400 MHz 100 W, 28 V, 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull N–CHANNEL configurations. Can be used in manual gain control, ALC and modulation BROADBAND RF POWER MOSFET circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W Gain — 12 dB Efficiency — 60% 2 • Low Thermal Resistance • Low Crss — 10 pF Typ @ VDS = 28 Volts • 5, 8 1, 4Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Excellent Thermal Stability; Suited for Class A Operation CASE 744A–01, STYLE 2 • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C (1) PD 270 Watts Derate above 25°C 1.54 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Temperature Range TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction–to–Case RθJC 0.65 °C/W (1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF177, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic (1) Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current IDSS — — 2.0 mAdc (VDS = 28 V, VGS = 0) Gate–Source Leakage Current IGSS — — 1.0 µAdc (VGS = 20 V, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage VGS(th) 1.0 3.0 6.0 Vdc (VDS = 10 V, ID = 50 mA) Drain–Source On–Voltage VDS(on) — — 1.4 Vdc (VGS = 10 V, ID = 3.0 A) Forward Transconductance gfs 1.8 2.2 — mhos (VDS = 10 V, ID = 2.0 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance Ciss — 100 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance Coss — 105 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss — 10 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS (Figure 8) (2) Common Source Power Gain GPS 10 12 — dB (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA) Drain Efficiency η 55 60 — % (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA) Electrical Ruggedness ψ No Degradation (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA, in Output Power Load VSWR = 30:1, All Phase Angles At Frequency of Test) Before & After Test (1) Note each transistor chip measured separately (2) Both transistor chips operating in push–pull amplifier MRF177 MOTOROLA RF DEVICE DATA,

TYPICAL CHARACTERISTICS

140 50 f = 150 MHz 120 f = 225 MHz 225 MHz 40 80 30 400 MHz 400 MHz 60 20

V

20 DD = 28 V 10 VDD = 13.5 V IDQ = 200 mA IDQ = 200 mA0002468100246810 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 1. Output Power versus Input Power Figure 2. Output Power versus Input Power

140 100 Pin = 10Wf= 400 MHz VDS = 28 V90 120 Pin = CONSTANT IDQ = 200 mA IDQ = 200 mA 80 100 f = 400 MHz 70 6.3 W 80 604W50 40 300010 12 14 16 18 20 22 24 26 28 30 –5 –4 –3 –2 –1012345VDD, SUPPLY VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 3. Output Power versus Supply Voltage Figure 4. Output Power versus Gate Voltage

420 140 100 Ciss 360 120 300 100 VGS = 0 V 10 TC = 25° C 240 f = 1 MHz 80 180 60 2 Coss 1 120 40 Crss 0.4 60 20 0.2000.104812 16 20 24 28124610 20 40 60 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 5. Capacitance versus Drain Voltage Figure 6. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF177

Coss, CAPACITANCE (pF) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Crss, Ciss, CAPACITANCE (pF) I , DRAIN CURRENT (AMPS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)D, f = 400 MHz f = 400 MHz Zo = 10 Ω ZOL* Zin 100 NOTE: Input and Output Impedance values given are measured gate–to–gate and drain–to–drain respectively. VDD = 28 V IDQ = 200 mA Pout = 100WfZin ZOL* (MHz) Ohms Ohms ZOL*: Conjugate of optimum load impedance 100 2.0 – j11.5 3.5 – j6 into which the device operates at a given output power, voltage, current 150 2.05 – j9.45 3.35 – j5.34 and frequency. 200 2.1 – j7.5 3.3 – j4.4 400 2.35 + j0.4 3.2 – j1.38 Figure 7. Impedance or Admittance Coordinates MRF177 MOTOROLA RF DEVICE DATA, VDD = 28 V + L1 D1 R3 C14 + + + R2 C15 C16 FERRITE BEAD C17 C18 FERRITE BEAD R1 FERRITE BEAD R4 L2 + T2 MRF177 C13 T3 C2 C5 C10 MS1 MS3

RF

C7 C8 INPUT T1 C4 RFMS2 MS4 C1 C9 T4 OUTPUTC3 C6 C11 D.U.T. C12 R5 0.325″ 0.325″ MICROSTRIP DETAIL 0.15″ 0.15″ 0.10″ 0.10″ 0.45″ MS1 MS3 0.45″ 0.45″ MS2 MS4 0.45″ 0.10″ 0.15″ 0.10″ 0.15″ 0.325″ 0.325″ C1, C12 1–10 pF JOHANSON OR EQUIVALENT D1 1N5347B, 20 Vdc C2, C3, C5, C6, C10, C11 270 pF ATC 100 MIL CHIP CAP L1 1–TURN NO. 18, 0.25″, 2–HOLE FERRITE BEAD C4, C9 1–20 pF L2 8–1/2 TURNS NO. 18, CLOSE WOUND .375″ DIA. C7 36 pF CHIP CAP R1, R4, R5 10 kΩ @ 1/2 W RESISTOR C8 10 pF CHIP CAP R2 10 kΩ, 10 TURN RESISTOR C13, C14 0.1 µFD @ 50 Vdc R3 2.0 kΩ @ 1/2 W RESISTOR C15, C18 10 µFD @ 50 Vdc T1 1–1/2 T, 50 Ω COAX, .034″ DIA. ON DUAL 0.5″ FERRITE CORE C16 500 pF BUTTON T2 2.0″ 25 Ω COAX, .075″ DIA. C17 1000 pF UNCASED MICA T3 2.1″ 10 Ω COAX, .075″ DIA. T4 4.0″ 50 Ω COAX, .0865″ DIA. BOARD Dielectric Thickness = 0.060″ 2oz Copper, Cu–Clad, Teflon Fiberglass, εr = 2.55

Figure 8. Test Circuit Electrical Schematic MOTOROLA RF DEVICE DATA MRF177

,

PACKAGE DIMENSIONS U 4 PL Q M

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 0.76 (0.030) MAMBMY14.5M, 1982. 1234KMILLIMETERS INCHES DIM MIN MAX MIN MAX A 22.60 23.11 0.890 0.910

R –B– B 9.52 10.03 0.375 0.395

C 6.65 7.16 0.262 0.282 D 1.60 1.95 0.063 0.077 E 2.94 3.40 0.116 0.134

K F 2.87 3.22 0.113 0.127

5678G16.51 BSC 0.650 BSC H 4.01 4.36 0.158 0.172

D J 0.07 0.15 0.003 0.0064 PL K 4.34 4.90 0.171 0.193 F 4 PL L 12.45 12.95 0.490 0.510

M 45 NOM 45 NOM

V 2 PL N 1.051 11.02 0.414 0.434

Q 3.04 3.35 0.120 0.132

L R 9.90 10.41 0.390 0.410

U 1.02 1.27 0.040 0.050

G V 0.64 0.89 0.025 0.035

–A– STYLE 2: PIN 1. SOURCE (COMMON)

J 2. DRAIN N 3. DRAIN

4. SOURCE (COMMON) 5. SOURCE (COMMON) 6. GATE 7. GATE

H C

8. SOURCE (COMMON)

E

–T– SEATINGPLANE

CASE 744A–01 ISSUE C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF177 ◊ MOTOROLA RF DEVICEM RDFA1T7A7/D

]
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