Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM 200/150 W, 50 V, 500 MHz broadcast or TV channel frequency bands. N–CHANNEL MOS • Electrical Performance BROADBAND MRF176GU @ 50 V, 400 MHz (“U” Suffix) RF POWER FETs Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM 200/150 W, 50 V, 500 MHz broadcast or TV channel frequency bands. N–CHANNEL MOS • Electrical Performance BROADBAND MRF176GU @ 50 V, 400 MHz (“U” Suffix) RF POWER FETs Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 17 dB Typ Efficiency — 55% Typ D • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance

G

• Low Crss — 7.0 pF Typ @ VDS = 50VSG(FLANGE) CASE 375–04, STYLE 2

D

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C PD 400 Watts Derate above 25°C 2.27 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.44 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage V(BR)DSS 125 — — Vdc (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current IDSS — — 2.5 mAdc (VDS = 50 V, VGS = 0) Gate–Body Leakage Current IGSS — — 1.0 µAdc (VGS = 20 V, VDS = 0) NOTE: 1. Each side of device measured separately. REV8MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF176GU MRF176GV, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 180 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 100 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 6.0 — pF FUNCTIONAL CHARACTERISTICS — MRF176GV (2) (Figure 1) Common Source Power Gain Gps 15 17 — dB (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency η 50 55 — % (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness ψ (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA, No Degradation in Output Power VSWR 10:1 at all Phase Angles) NOTES: 1. Each side of device measured separately. 2. Measured in push–pull configuration. R1 + C10 50 V BIAS 0 – 6 V C8 C9 C3 C4 – R2 D.U.T. T2 T1 C5 C1 C2 C6 C7 C1 — Arco 404, 8.0–60 pF L2 — Ferrite Beads of Suitable Material C2, C3, C6, C8 — 1000 pF Chip L2 — for 1.5–2.0 µH, Total Inductance C4, C9 — 0.1 µF Chip R1 — 100 Ohms, 1/2 W C5 — 180 pF Chip R2 — 1.0 kOhms, 1/2 W C7 — Arco 403, 3.0–35 pF T1 — 4:1 Impedance Ratio RF Transformer. C10 — 0.47 µF Chip, Kemet 1215 or Equivalent T1 — Can Be Made of 25 Ohm Semirigid L1 — 10 Turns AWG #16 Enameled Wire, T1 — Co–Ax, 47–62 Mils O.D. L1 — Close Wound, 1/4″ I.D. T2 — 1:4 Impedance Ratio RF Transformer. Board material — .062″ fiberglass (G10), T2 — Can Be Made of 25 Ohm Semirigid Two sided, 1 oz. copper, ε 5 T2 — Co–Ax, 62–90 Mils O.D.r Unless otherwise noted, all chip capacitors NOTE: For stability, the input transformer T1 should be loaded are ATC Type 100 or Equivalent NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. Figure 1. 225 MHz Test Circuit MRF176GU MRF176GV MOTOROLA RF DEVICE DATA, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS — MRF176GU (1) (Figure 2) Common Source Power Gain Gps 12 14 — dB (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency η 45 50 — % (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness ψ (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA, No Degradation in Output Power VSWR 10:1 at all Phase Angles) NOTE: 1. Measured in push–pull configuration. A B C17 L7 C18 L8 BIAS C19 50 V C11 C12 R1 C13 C15 R2 L1 C9 Z1 Z3 C1 L3 C6 B1 C3 C4 C5 C8 B2 C7 L2 C10 Z2 Z4 C2 L4 D.U.T. R3 L6ABC14 C16 B1 — Balun, 50 Ω Semirigid Coax .086 OD 2″ Long B2 — Balun, 50 Ω Semirigid Coax .141 OD 2″ Long C1, C2, C9, C10 — 270 pF ATC Chip Capacitor C3 — 15 pF ATC Chip Cap C4, C8 — 1.0–20 pF Piston Trimmer Cap C5 — 27 pF ATC Chip Cap C6, C7 — 22 pF Mini Unelco Capacitor L5, L6 — 13T #18 W .250 ID C11, C13, C14, C15, C16 — 0.01 µF Ceramic Capacitor L7 — Ferroxcube VK–200 20/4B µ .400″C12 — 1.0 F 50 V Tantalum Cap L8 — 3T #18 W .340 ID C17, C18 — 680 pF Feedthru Capacitor .200 R1 — 1.0 kΩ 1/4 W Resistor C19 — 10 µF 100 V Tantalum Cap R2, R3 — 10 kΩ 1/4 W Resistor L1, L2 — Hairpin Inductor #18 W Z1, Z2 — Microstrip Line .400L x .250W L3, L4 — Hairpin Inductor #18 W .200″ Z3, Z4 — Microstrip Line .450L x .250W .200″ Ckt Board Material — .060″ teflon–fiberglass, copper clad both sides, 2 oz. copper, εr = 2.55 Figure 2. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF176GU MRF176GV,

TYPICAL CHARACTERISTICS

4000 100 VDS = 30 V 15 V 2000 10 1000 TC = 25°C01012345678910 2 10 50 200 ID, DRAIN CURRENT (AMPS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. Common Source Unity Current Gain* Figure 4. DC Safe Operating Area Gain–Frequency versus Drain Current

* Data shown applies to each half of MRF176GU/GV INPUT AND OUTPUT IMPEDANCE MRF176GU/GV VDD = 50 V, IDQ = 2 x 100 mA Zin f Zin ZOL* MHz OHMS OHMS 300 400 (Pout = 150 W)225 f = 500 MHz 225 2.05 – j2.50 6.50 – j3.50 f = 500 MHz 300 2.00 – j1.10 4.80 – j3.10 400 400 1.85 + j0.75 3.00 – j1.90 150 500 1.60 + j2.70 2.60 + j0.10 ZOL* (Pout = 200 W) 225 300 100 30 7.50 – j6.50 17.00 – j4.00 50 5.50 – j7.00 14.00 – j5.00 100 3.20 – j6.00 11.00 – j5.20 150 2.50 – j4.80 8.20 – j5.00 50 150 ZOL* 225 2.05 – j2.50 5.00 – j4.20 100 ZOL* = Conjugate of the optimum load impedance into which the device output Zo = 10 Ω 50 operates at a given output power, voltage 30 and frequency. NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.

Figure 5. Series Equivalent Input/Output Impedance MRF176GU MRF176GV MOTOROLA RF DEVICE DATA

fT, UNITY GAIN-FREQUENCY (MHz) ID, DRAIN CURRENT (AMPS),

TYPICAL CHARACTERISTICS

500 30

C

200 iss 25 Pout = 200 W 100 Coss 50 VGS = 0Vf= 1 MHz 15 150 W 20 VDS = 50VC10 IDQ = 2 x 100 mA 10 rss55010 20 30 40 50 5 10 20 50 100 200 500 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) f, FREQUENCY (MHz)

Figure 6. Capacitance versus Drain–Source Voltage* Figure 7. Power Gain versus Frequency

* Data shown applies to each half of MRF176GU/GV

MRF176GV

300 320 IDQ = 2 x 100 mA VDD = 50Vf= 225 MHz 240 Pin = 6 W 40V4W1002WIDQ = 2 x 100 mA 80 f = 225 MHz000612 30 32 34 36 38 40 42 44 46 48 50 Pin, POWER INPUT (WATTS) VDS, SUPPLY VOLTAGE (VOLTS)

Figure 8. Power Input versus Power Output Figure 9. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF176GU MRF176GV

Pout, POWER OUTPUT (WATTS) C, CAPACITANCE (pF) Pout, OUTPUT POWER (WATTS) POWER GAIN (dB),

TYPICAL CHARACTERISTICS MRF176GU

200 200 f = 400 MHz 180 180 160 f = 400 MHz 160 500 MHz 140 140 120 500 MHz 120 100 100 80 80 60 60 40 VDD = 40 V 40 VDD = 50 V IDQ = 2 x 100 mA IDQ = 2 x 100 mA 20 20000246810 12 14 160246810 12 14 16 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 10. Output Power versus Input Power Figure 11. Output Power versus Input Power

180 Pin = 12 W 1608W4W40 IDQ = 2 x 100 mA 20 f = 400 MHz 20 30 40 50 VDD, SUPPLY VOLTAGE (VOLTS)

Figure 12. Output Power versus Supply Voltage MRF176GU MRF176GV MOTOROLA RF DEVICE DATA

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES Gate control is achieved by applying a positive voltage The physical structure of a MOSFET results in capacitors slightly in excess of the gate–to–source threshold voltage, between the terminals. The metal oxide gate structure deter- VGS(th). mines the capacitors from gate–to–drain (Cgd), and gate–to– Gate Voltage Rating — Never exceed the gate voltage source (Cgs). The PN junction formed during the fabrication rating (or any of the maximum ratings on the front page). Ex- of the MOSFET results in a junction capacitance from drain– ceeding the rated VGS can result in permanent damage to to–source (Cds). the oxide layer in the gate region. These capacitances are characterized as input (Ciss), out- Gate Termination — The gates of this device are essen- put (Coss) and reverse transfer (Crss) capacitances on data tially capacitors. Circuits that leave the gate open–circuited sheets. The relationships between the inter–terminal capaci- or floating should be avoided. These conditions can result in tances and those given on data sheets are shown below. The turn–on of the devices due to voltage build–up on the input Ciss can be specified in two ways: capacitor due to leakage currents or pickup. 1. Drain shorted to source and positive voltage at the gate. Gate Protection — This device does not have an internal monolithic zener diode from gate–to–source. The addition of 2. Positive voltage of the drain in respect to source and zero an internal zener diode may result in detrimental effects on volts at the gate. In the latter case the numbers are lower. the reliability of a power MOSFET. If gate protection is re- However, neither method represents the actual operat- quired, an external zener diode is recommended. ing conditions in RF applications. HANDLING CONSIDERATIONS DRAIN The gate of the MOSFET, which is electrically isolated Cgd from the rest of the die by a very thin layer of SiO2, may be damaged if the power MOSFET is handled or installed GATE Ciss = Cgd + Cgs C improperly. Exceeding the 40 V maximum gate–to–sourceds Coss = Cgd + Cds C = C voltage rating, VGS(max), can rupture the gate insulation andrss gd destroy the FET. RF Power MOSFETs are not nearly as sus- Cgs SOURCE ceptible as CMOS devices to damage due to static discharge because the input capacitances of power MOSFETs are much larger and absorb more energy before being charged The Ciss given in the electrical characteristics table was to the gate breakdown voltage. However, once breakdown measured using method 2 above. It should be noted that begins, there is enough energy stored in the gate–source ca- Ciss, Coss, Crss are measured at zero drain current and are pacitance to ensure the complete perforation of the gate ox- provided for general information about the device. They are ide. To avoid the possibility of device failure caused by static not RF design parameters and no attempt should be made to discharge, precautions similar to those taken with small–sig- use them as such. nal MOSFET and CMOS devices apply to power MOSFETs. When shipping, the devices should be transported only in LINEARITY AND GAIN CHARACTERISTICS antistatic bags or conductive foam. Upon removal from the In addition to the typical IMD and power gain, data pres- packaging, careful handling procedures should be adhered ented in Figure 3 may give the designer additional informa- to. Those handling the devices should wear grounding straps tion on the capabilities of this device. The graph represents and devices not in the antistatic packaging should be kept in the small signal unity current gain frequency at a given drain metal tote bins. MOSFETs should be handled by the case current level. This is equivalent to fT for bipolar transistors. and not by the leads, and when testing the device, all leads Since this test is performed at a fast sweep speed, heating of should make good electrical contact before voltage is ap- the device does not occur. Thus, in normal use, the higher plied. As a final note, when placing the FET into the system it temperatures may degrade these characteristics to some ex- is designed for, soldering should be done with grounded tent. equipment. The gate of the power MOSFET could still be in danger af- ter the device is placed in the intended circuit. If the gate may DRAIN CHARACTERISTICS see voltage transients which exceed V , the circuit de- One figure of merit for a FET is its static resistance in the GS(max)signer should place a 40 V zener across the gate and source full–on condition. This on–resistance, VDS(on), occurs in the terminals to clamp any potentially destructive spikes. Using a linear region of the output characteristic and is specified un- resistor to keep the gate–to–source impedance low also der specific test conditions for gate–source voltage and drain helps damp transients and serves another important func- current. For MOSFETs, VDS(on) has a positive temperature tion. Voltage transients on the drain can be coupled to the coefficient and constitutes an important design consideration gate through the parasitic gate–drain capacitance. If the at high temperatures, because it contributes to the power gate–to–source impedance and the rate of voltage change dissipation within the device. on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage GATE CHARACTERISTICS and turn the device on. The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DESIGN CONSIDERATIONS input resistance is very high — on the order of 109 ohms — The MRF176G is a RF power N–channel enhancement resulting in a leakage current of a few nanoamperes. mode field–effect transistor (FETs) designed for VHF and MOTOROLA RF DEVICE DATA MRF176GU MRF176GV, UHF power amplifier applications. Motorola RF MOSFETs current flows when a positive voltage is applied to the gate. feature a vertical structure with a planar design, thus avoid- RF power FETs require forward bias for optimum perfor- ing the processing difficulties associated with V–groove mance. The value of quiescent drain current (IDQ) is not criti- MOS power FETs. cal for many applications. The MRF176G was characterized Motorola Application Note AN211A, FETs in Theory and at IDQ = 100 mA, each side, which is the suggested minimum Practice, is suggested reading for those not familiar with the value of IDQ. For special applications such as linear amplifi- construction and characteristics of FETs. cation, IDQ may have to be selected to optimize the critical The major advantages of RF power FETs include high parameters. gain, low noise, simple bias systems, relative immunity from The gate is a dc open circuit and draws no current. There- thermal runaway, and the ability to withstand severely mis- fore, the gate bias circuit may be just a simple resistive divid- matched loads without suffering damage. Power output can er network. Some applications may require a more elaborate be varied over a wide range with a low power dc control sig- bias sytem. nal, thus facilitating manual gain control, ALC and modula- tion. GAIN CONTROL Power output of the MRF176 may be controlled from its DC BIAS rated value down to zero (negative gain) by varying the dc The MRF176G is an enhancement mode FET and, there- gate voltage. This feature facilitates the design of manual fore, does not conduct when drain voltage is applied. Drain gain control, AGC/ALC and modulation systems. MRF176GU MRF176GV MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS U NOTES:Q RADIUS 2 PL 1. DIMENSIONING AND TOLERANCING PER ANSI G Y14.5M, 1982.

0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 1.330 1.350 33.79 34.29B 0.370 0.410 9.40 10.41

5 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96

K34E0.050 0.070 1.27 1.77

G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84

D J 0.004 0.006 0.11 0.15

K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23

J Q 0.060 0.070 1.52 1.78 ENR0.390 0.410 9.91 10.41

U 1.100 BSC 27.94 BSC

H STYLE 2:

SEATING PIN 1. DRAIN–T– PLANE 2. DRAIN –A– 3. GATEC 4. GATE 5. SOURCE

CASE 375–04 ISSUE D MOTOROLA RF DEVICE DATA MRF176GU MRF176GV

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF176GU MRF176GV ◊ MOTOROLA RF DEVMICRFE1 D76AGTUA/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications Motorola Preferred Device such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025–1150 MHz MICROWA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line !
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line ! .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W, to 400 MHz MRF136
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz •
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB