Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM 200/150 WATTS, 28 V, 500 MHz broadcast or TV channel frequency bands. N–CHANNEL MOS • Guaranteed Performance BROADBAND MRF175GV @ 28 V, 225 MHz (“V” Suffix) RF POWER FETs Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MH...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM 200/150 WATTS, 28 V, 500 MHz broadcast or TV channel frequency bands. N–CHANNEL MOS • Guaranteed Performance BROADBAND MRF175GV @ 28 V, 225 MHz (“V” Suffix) RF POWER FETs Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ D • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance

G

• Low Crss — 20 pF Typ @ VDS = 28VSG(FLANGE) CASE 375–04, STYLE 2

D

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGR 65 Vdc (RGS = 1.0 MΩ) Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 26 Adc Total Device Dissipation @ TC = 25°C PD 400 Watts Derate above 25°C 2.27 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.44 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current IDSS — — 2.5 mAdc (VDS = 28 V, VGS = 0) Gate–Source Leakage Current IGSS — — 1.0 µAdc (VGS = 20 V, VDS = 0) (continued) Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV7MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF175GU MRF175GV, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) VDS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 180 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 200 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 20 — pF FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1) Common Source Power Gain Gps 12 14 — dB (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency η 55 65 — % (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness ψ (VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA, No Degradation in Output Power VSWR 10:1 at all Phase Angles) NOTES: 1. Each side of device measured separately. 2. Measured in push–pull configuration. L2 R1 + BIAS 0 – 6 V C10 28 VC8 C9 C3 C4 – R2 L1 D.U.T. T2 T1 C6 C5 C1 C2 C7 C1 — Arco 404, 8.0–60 pF R1 — 100 Ohms, 1/2 W C2, C3, C7, C8 — 1000 pF Chip R2 — 1.0 k Ohm, 1/2 W C4, C9 — 0.1 µF Chip T1 — 4:1 Impedance Ratio RF Transformer. C5 — 180 pF Chip T1 — Can Be Made of 25 Ohm Semirigid Coax, C6 — 100 pF and 130 pF Chips in Parallel T1 — 47–52 Mils O.D. C10 — 0.47 µF Chip, Kemet 1215 or Equivalent T2 — 1:9 Impedance Ratio RF Transformer. L1 — 10 Turns AWG #16 Enamel Wire, Close T2 — Can Be Made of 15–18 Ohms Semirigid L1 — Wound, 1/4″ I.D. T2 — Coax, 62–90 Mils O.D. L2 — Ferrite Beads of Suitable Material for NOTE: For stability, the input transformer T1 should be loaded L2 — 1.5–2.0 µH Total Inductance NOTE: with ferrite toroids or beads to increase the common Board material — .062″ fiberglass (G10), NOTE: mode inductance. For operation below 100 MHz. The Two sided, 1 oz. copper, εr 5 NOTE: same is required for the output transformer. Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent. Figure 1. 225 MHz Test Circuit MRF175GU MRF175GV MOTOROLA RF DEVICE DATA, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2) Common Source Power Gain Gps 10 12 — dB (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency η 50 55 — % (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness ψ (VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA, No Degradation in Output Power VSWR 10:1 at all Phase Angles) NOTE: 1. Measured in push–pull configuration. A B C14 L5 C15 L6 BIAS C18 28 V C10 C11 R1 C12 C13 R2 L3 C1 D.U.T.L1 C8 Z1 Z3 Z5 B1 C3 C4 C5 C6 C7 B2 Z2 Z4 Z6 L2 C2 C9 R3 L4AB0.180″ C16 C17 0.200″ B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long L1, L2 — Hairpin Inductor #18 Wire B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long L3, L4 — 12 Turns #18 Enameled Wire 0.340″ I.D. C1, C2, C8, C9 — 270 pF ATC Chip Cap L5 — Ferroxcube VK200 20/4B C3, C5, C7 — 1.0–20 pF Trimmer Cap L6 — 3 Turns #16 Enameled Wire 0.340″ I.D. C4 — 15 pF ATC Chip Cap R1 — 1.0 kΩ 1/4 W Resistor C6 — 33 pF ATC Chip Cap R2, R3 — 10 kΩ 1/4 W Resistor C10, C12, C13, C16, C17 — 0.01 µF Ceramic Cap Z1, Z2 — Microstrip Line 0.400″ x 0.250″ C11 — 1.0 µF 50 V Tantalum Z3, Z4 — Microstrip Line 0.870″ x 0.250″ C14, C15 — 680 pF Feedthru Cap Z5, Z6 — Microstrip Line 0.500″ x 0.250″ C18 — 20 µF 50 V Tantalum Board material — 0.060″ Teflon–fiberglass, εr = 2.55, copper clad both sides, 2 oz. copper. Figure 2. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF175GU MRF175GV,

TYPICAL CHARACTERISTICS

4000 100 VDS = 20 V VDS = 10 V 10 TC = 25°C010246810 12 14 16 18 20 1 10 100 ID, DRAIN CURRENT (AMPS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. Common Source Unity Current Gain Figure 4. DC Safe Operating Area Frequency versus Drain Current

5 1.2 VDD = 28 V 1.1 VDS = 10 V ID = 4A3A2ATYPICAL DEVICE SHOWN, VGS(th) = 3 V 0.9 100 mA 0.8123456– 25 0 25 50 75 100 125 150 175 VGS, GATE–SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 5. Drain Current versus Gate Voltage Figure 6. Gate–Source Voltage versus

(Transfer Characteristics) Case Temperature VGS = 0 V 500 f = 1 MHz Coss Ciss Crss0510 15 20 25 VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance versus Drain–Source Voltage*

* Data shown applies to each half of MRF175GU/GV.

MRF175GU MRF175GV MOTOROLA RF DEVICE DATA

ID, DRAIN CURRENT (AMPS) fT, UNITY GAIN FREQUENCY (MHz) C, CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS),

TYPICAL CHARACTERISTICS MRF175GV

300 320 IDQ = 2 x 100 mA240 f = 225 MHz Pin = 12 W 200 2008W1204WVDD = 28 V IDQ = 2 x 100 mA 40 f = 225 MHz00012 24 12 14 16 18 20 22 24 26 28 Pin, POWER INPUT (WATTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 8. Power Input versus Power Output Figure 9. Output Power versus Supply Voltage MRF175GU

200 200 180 Pin = 14 W 180 160 160 f = 400 MHz 140 140 500 MHz 10 W 120 120 100 1006W80 80 60 60 VDS = 28 V 40 40 IDQ = 2 x 100 mA 20 f = 400 MHz 200012 14 16 18 20 22 24 26 280510 15 20 25 VDD, SUPPLY VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)

Figure 10. Output Power versus Supply Voltage Figure 11. Output Power versus Input Power MRF175GV

Pout = 200 W VDS = 28 V IDQ = 2 x 100 mA10 150W510 20 50 100 200 500 f, FREQUENCY (MHz)

Figure 12. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF175GU MRF175GV

Pout, OUTPUT POWER (WATTS) Pout, POWER OUTPUT (WATTS) POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS),

INPUT AND OUTPUT IMPEDANCE

VDD = 28 V, IDQ = 2 x 100 mA Zin f Zin ZOL* 300 MHz OHMS OHMS 225 (Pout = 150 W) 225 400 300 f = 500 MHz f = 500 MHz 225 1.95 – j2.30 3.10 – j0.25 Z * Z * 300 1.75 – j0.20 2.60 + j0.20OL 225 OL 150 400 1.60 + j2.20 2.00 + j1.20 150 500 1.35 + j4.00 1.70 + j2.70 100 100 50 ZOL* = Conjugate of the optimum load (Pout = 200 W) 50 impedance into which the device 30 6.50 – j5.10 6.30 – j2.5030 operates at a given output power, 50 5.00 – j4.80 5.75 – j2.75 30 voltage and frequency. 100 3.60 – j4.20 4.60 – j2.65Zo = 10 Ω 150 2.80 – j3.60 2.60 – j2.20 225 1.95 – j2.30 2.60 – j0.60 NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively. Figure 13. Series Equivalent Input/Output Impedance

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES provided for general information about the device. They are The physical structure of a MOSFET results in capacitors not RF design parameters and no attempt should be made to between the terminals. The metal oxide gate structure deter- use them as such. mines the capacitors from gate–to–drain (Cgd), and gate–to– source (Cgs). The PN junction formed during the fabrication LINEARITY AND GAIN CHARACTERISTICS of the MOSFET results in a junction capacitance from drain– In addition to the typical IMD and power gain, data pres- to–source (Cds). ented in Figure 3 may give the designer additional informa- These capacitances are characterized as input (Ciss), out- tion on the capabilities of this device. The graph represents put (Coss) and reverse transfer (Crss) capacitances on data the small signal unity current gain frequency at a given drain sheets. The relationships between the inter–terminal capaci- current level. This is equivalent to fT for bipolar transistors. tances and those given on data sheets are shown below. The Since this test is performed at a fast sweep speed, heating of Ciss can be specified in two ways: the device does not occur. Thus, in normal use, the higher 1. Drain shorted to source and positive voltage at the gate. temperatures may degrade these characteristics to some ex- tent. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. DRAIN CHARACTERISTICS However, neither method represents the actual operat- One figure of merit for a FET is its static resistance in the ing conditions in RF applications. full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified un- DRAIN der specific test conditions for gate–source voltage and drain Cgd current. For MOSFETs, VDS(on) has a positive temperature GATE Ciss = Cgd + Cgs coefficient and constitutes an important design consideration Cds Coss = Cgd + Cds at high temperatures, because it contributes to the power Crss = Cgd dissipation within the device. Cgs SOURCE GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is The Ciss given in the electrical characteristics table was electrically isolated from the source by a layer of oxide. The measured using method 2 above. It should be noted that input resistance is very high — on the order of 109 ohms — Ciss, Coss, Crss are measured at zero drain current and are resulting in a leakage current of a few nanoamperes. MRF175GU MRF175GV MOTOROLA RF DEVICE DATA, Gate control is achieved by applying a positive voltage DESIGN CONSIDERATIONS slightly in excess of the gate–to–source threshold voltage, The MRF175G is a RF power N–channel enhancement VGS(th). mode field–effect transistor (FETs) designed for HF, VHF and Gate Voltage Rating — Never exceed the gate voltage UHF power amplifier applications. Motorola RF MOSFETs rating (or any of the maximum ratings on the front page). Ex- feature a vertical structure with a planar design. ceeding the rated VGS can result in permanent damage to Motorola Application Note AN211A, FETs in Theory and the oxide layer in the gate region. Practice, is suggested reading for those not familiar with the Gate Termination — The gates of this device are essen- construction and characteristics of FETs. tially capacitors. Circuits that leave the gate open–circuited The major advantages of RF power FETs include high or floating should be avoided. These conditions can result in gain, low noise, simple bias systems, relative immunity from turn–on of the devices due to voltage build–up on the input thermal runaway, and the ability to withstand severely mis- capacitor due to leakage currents or pickup. matched loads without suffering damage. Power output can Gate Protection — These devices do not have an internal be varied over a wide range with a low power dc control sig- monolithic zener diode from gate–to–source. If gate protec- nal. tion is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance DC BIAS low also helps damp transients and serves another important The MRF175G is an enhancement mode FET and, there- function. Voltage transients on the drain can be coupled to fore, does not conduct when drain voltage is applied. Drain the gate through the parasitic gate–drain capacitance. If the current flows when a positive voltage is applied to the gate. gate–to–source impedance and the rate of voltage change RF power FETs require forward bias for optimum perfor- on the drain are both high, then the signal coupled to the gate mance. The value of quiescent drain current (IDQ) is not criti- may be large enough to exceed the gate–threshold voltage cal for many applications. The MRF175G was characterized and turn the device on. at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplifi- HANDLING CONSIDERATIONS cation, IDQ may have to be selected to optimize the critical When shipping, the devices should be transported only in parameters. antistatic bags or conductive foam. Upon removal from the The gate is a dc open circuit and draws no current. There- packaging, careful handling procedures should be adhered fore, the gate bias circuit may be just a simple resistive divid- to. Those handling the devices should wear grounding straps er network. Some applications may require a more elaborate and devices not in the antistatic packaging should be kept in bias sytem. metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads GAIN CONTROL should make good electrical contact before voltage is ap- Power output of the MRF176 may be controlled from its plied. As a final note, when placing the FET into the system it rated value down to zero (negative gain) by varying the dc is designed for, soldering should be done with grounded gate voltage. This feature facilitates the design of manual equipment. gain control, AGC/ALC and modulation systems. MOTOROLA RF DEVICE DATA MRF175GU MRF175GV,

PACKAGE DIMENSIONS U NOTES:Q RADIUS 2 PL 1. DIMENSIONING AND TOLERANCING PER ANSI G Y14.5M, 1982.

0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 1.330 1.350 33.79 34.29B 0.370 0.410 9.40 10.41

5 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96

K34E0.050 0.070 1.27 1.77

G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84

D J 0.004 0.006 0.11 0.15

K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23

N J

Q 0.060 0.070 1.52 1.78

E R 0.390 0.410 9.91 10.41

U 1.100 BSC 27.94 BSC

H STYLE 2:

–T– SEATING PIN 1. DRAINPLANE 2. DRAIN –A– C 3. GATE 4. GATE 5. SOURCE

CASE 375–04 ISSUE D

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF175GU MRF175GV ◊ MOTOROLA RF DEVMICREF1 D75AGTAU/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line !
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line ! .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W, to 400 MHz MRF136
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz •
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line .designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line .designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power =