Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode .designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Efficiency = 50% (Min) N–CHANNEL MOS • Excellent Thermal Stability, Ideally Suited For Class A BROADBAND RF POWER FET Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 3...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line N–Channel Enhancement–Mode

.designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Efficiency = 50% (Min) N–CHANNEL MOS • Excellent Thermal Stability, Ideally Suited For Class A BROADBAND RF POWER

FET

Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz

D G

S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGR 65 Vdc (RGS = 1.0 MΩ) Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 13 Adc Total Device Dissipation @ TC = 25°C PD 270 Watts Derate above 25°C 1.54 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.65 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV7MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF174, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 10 mAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 3.0 A) gfs 1.75 2.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 175 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 190 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF FUNCTIONAL CHARACTERISTICS (Figure 1) Noise Figure NF — 3.0 — dB (VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz) Common Source Power Gain Gps 9.0 11.8 — dB (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) Drain Efficiency η 50 60 — % (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) Electrical Ruggedness ψ (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA, No Degradation in Output Power VSWR 30:1 at all Phase Angles) L4 R2 C12 C13 BIAS + ADJUST + R1 VDD = 28 V R3 C9 C10 D1 C11 C14 – – RFC1 R4 C C8 RF INPUT 3 RF OUTPUT L1 L2 L3 C1 C2 C4 C5 DUT C6 C7 C1 — 15 pF Unelco L1 — #16 AWG, 1–1/4 Turns, 0.213″ ID C2 — Arco 462, 5.0–80 pF C3 — 100 pF Unelco L2 — #16 AWG, Hairpin 0.25″0.062″ C4 — 25 pF Unelco 0.47″ C6 — 40 pF Unelco L3 — #14 AWG, Hairpin 0.2″ C7 — Arco 461, 2.7–30 pF L4 — 10 Turns #16 AWG Enameled Wire on R1 C5, C8 — Arco 463, 9.0–180 pF RFC1 — 18 Turns #16 AWG Enameled Wire, 0.3″ ID C9, C11, C14 — 0.1 µF Erie Redcap R1 — 10 Ω, 2.0 W C10 — 50 µF, 50 V R2 — 1.8 kΩ, 1/2 W C12, C13 — 680 pF Feedthru R3 — 10 kΩ, 10 Turn Bourns D1 — 1N5925A Motorola Zener R4 — 10 kΩ, 1/4 W Figure 1. 150 MHz Test Circuit MRF174 MOTOROLA RF DEVICE DATA, 140 80 f = 100 MHz 150 MHz f = 100 MHz 120 70 150 MHz 200 MHz 200 MHz 40 VDD = 28 V VDD = 13.5 V20 IDQ = 100 mA IDQ = 100 mA 20 10000246810 12 140246810 12 14 16 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

160 160 140 IDQ = 100 mA P = 6 W 140 IDQ = 100 mAin f = 100 MHz f = 150 MHz Pin = 12 W 120 1204W8W100 100 80 802W4W60 60 40 40 20 200012 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 28 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

160 22 140 IDQ = 100 mA 20 f = 200 MHz 18 Pout = 125 W 120 Pin = 16WV16 DD = 28VI= 100 mA 100 12 W DQ 808W12 60 10 2040212 14 16 18 20 22 24 26 28 20 40 60 80 100 120 140 160 180 200 220 VDD, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz)

Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF174

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) GPS , POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), 1605f= 150 MHz Pin = CONSTANT I = 100 mA 4 VDS = 10 V120 DQ VDD = 28 V 60 2 TYPICAL DEVICE SHOWN, VGS(th) = 3 V TYPICAL DEVICE SHOWN, VGS(th) = 3 V0 0 –14 –12 –10 – 8 – 6 – 4 – 20246123456VGS, GATE–SOURCE VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage

(Transfer Characteristics) 1.2 1000 VDD = 28VV= 0 V 800 GS 1.1 f = 1 MHz ID = 4 A13A5002A400 300 Coss 0.9 200 Ciss 100 mA 100 Crss 0.8 0 – 25 0 25 50 75 100 125 150 17504812 16 20 24 28 TC, CASE TEMPERATURE (°C) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 10. Gate–Source Voltage versus Figure 11. Capacitance versus Drain Voltage Case Temperature

TC = 25°C 0.6 0.4 0.2124610 20 40 60 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 12. DC Safe Operating Area MRF174 MOTOROLA RF DEVICE DATA

VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Pout, OUTPUT POWER (WATTS) ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPS), f S11 S21 S12 S22 (MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 2.0 0.932 –133 74.0 112 0.011 23 0.835 –151 5.0 0.923 –160 31.6 98 0.011 12 0.886 –168 10 0.921 –170 16.0 93 0.011 10 0.896 –174 20 0.921 –175 8.00 88 0.011 12 0.899 –177 30 0.921 –177 5.32 86 0.011 16 0.900 –178 40 0.921 –177 3.98 83 0.012 21 0.901 –178 50 0.922 –178 3.17 81 0.012 26 0.902 –178 60 0.923 –178 2.63 79 0.012 30 0.903 –178 70 0.924 –178 2.24 77 0.013 34 0.904 –178 80 0.925 –178 1.95 75 0.013 39 0.906 –178 90 0.927 –178 1.72 73 0.014 43 0.907 –178 100 0.930 –178 1.50 71 0.016 45 0.910 –178 110 0.930 –178 1.31 70 0.018 46 0.912 –178 120 0.931 –178 1.19 68 0.019 47 0.914 –178 130 0.942 –178 1.10 67 0.019 49 0.919 –178 140 0.936 –178 1.01 66 0.021 50 0.921 –178 150 0.938 –178 0.936 65 0.021 53 0.922 –178 160 0.938 –178 0.879 64 0.022 53 0.923 –178 170 0.940 –178 0.830 63 0.023 54 0.923 –177 180 0.942 –178 0.780 61 0.024 56 0.924 –177 190 0.942 –178 0.737 60 0.026 59 0.928 –177 200 0.952 –178 0.705 59 0.027 58 0.929 –177 210 0.950 –178 0.668 57 0.029 61 0.934 –177 220 0.942 –178 0.626 56 0.030 61 0.933 –177 230 0.943 –178 0.592 56 0.032 62 0.939 –177 240 0.946 –177 0.566 55 0.033 64 0.941 –177 250 0.952 –177 0.545 54 0.035 64 0.943 –177 260 0.958 –177 0.523 53 0.036 65 0.946 –177 270 0.956 –177 0.500 52 0.038 67 0.943 –177 280 0.960 –177 0.481 52 0.039 68 0.946 –177 290 0.956 –178 0.460 51 0.042 68 0.944 –177 300 0.955 –178 0.443 50 0.043 68 0.947 –177 Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 3.0 A MOTOROLA RF DEVICE DATA MRF174, + j50 + 90° + j25 + j100 +120° + 60° + j150 + j10 +150° + 30°+ j250 200 + j500 100 0 300 10 25 50 100 150 250 500 .05 180° .04 .03 .02 .01 f = 30 MHz 0° f = 30 MHz – j500 – j250 – j10 – 30° – j150 –150° – j100 – j25 –120° – 60° – j50 – 90°

Figure 13. S11, Input Reflection Coefficient Figure 14. S12, Reverse Transmission Coefficient

versus Frequency versus Frequency

VDS = 28 V, ID = 3.0 A VDS = 28 V, ID = 3.0 A

+ j50 + 90° f = 30 MHz ° + 60° + j25 + j100+120 + j150 +150° + 30° + j10 + j250 100 + j500 180° 543213000f= 30 MHz 25 50 100 150 250 5000° – j500 – j250 – j10 –150° – 30° – j150 – j100 –120° – 60° – j25 – 90° – j50

Figure 15. S21, Forward Transmission Coefficient Figure 16. S22, Output Reflection Coefficient

versus Frequency versus Frequency

VDS = 28 V, ID = 3.0 A VDS = 28 V, ID = 3.0 A MRF174 MOTOROLA RF DEVICE DATA

, 150 f = 200 MHz 100 f = 200 MHz 100 Pout = 125 W, VDD = 28 VZin Z * IDQ = 100 mAOL 30 f Zin ZOL* MHz Ohms Ohms Zo = 10 Ω 30 2.90 – j3.95 2.95 – j3.90 100 1.25 – j2.90 1.85 – j1.05 ZOL* = Conjugate of the optimum load impedance 150 1.18 – j1.40 1.72 – j0.05 ZOL* = into which the device output operates at a 200 1.30 – j0.90 1.70 + j0.25 ZOL* = given output power, voltage and frequency.

Figure 17. Series Equivalent Input/Output Impedance, Zin, ZOL* MOTOROLA RF DEVICE DATA MRF174

, DESIGN CONSIDERATIONS terized at IDQ = 100 mA, which is the suggested minimum The MRF174 is a RF power N–Channel enhancement value of IDQ. For special applications such as linear amplifi- mode field–effect transistor (FET) designed especially for cation, IDQ may have to be selected to optimize the critical UHF power amplifier and oscillator applications. Motorola RF parameters. MOSFETs feature a vertical structure with a planar design, The gate is a dc open circuit and draws no current. There- thus avoiding the processing difficulties associated with V– fore, the gate bias circuit may generally be just a simple re- groove vertical power FETs. sistive divider network. Some special applications may Motorola Application Note AN211A, FETs in Theory and require a more elaborate bias system. Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. GAIN CONTROL The major advantages of RF power FETs include high Power output of the MRF174 may be controlled from its gain, low noise, simple bias systems, relative immunity from rated value down to zero (negative gain) by varying the dc thermal runaway, and the ability to withstand severely mis- gate voltage. This feature facilitates the design of manual matched loads without suffering damage. Power output can gain control, AGC/ALC and modulation systems. (See be varied over a wide range with a low power dc control sig- Figure 8.) nal, thus facilitating manual gain control, ALC and modula- tion. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar UHF transistors are suitable for MRF174. See DC BIAS Motorola Application Note AN721, Impedance Matching Net- The MRF174 is an enhancement mode FET and, there- works Applied to RF Power Transistors. The higher input fore, does not conduct when drain voltage is applied. Drain impedance of RF MOSFETs helps ease the task of broad- current flows when a positive voltage is applied to the gate. band network design. Both small signal scattering parame- See Figure 9 for a typical plot of drain current versus gate ters and large signal impedances are provided. While the voltage. RF power FETs require forward bias for optimum s–parameters will not produce an exact design solution for performance. The value of quiescent drain current (IDQ) is high power operation, they do yield a good first approxima- not critical for many applications. The MRF174 was charac- tion. This is an additional advantage of RF MOS power FETs. MRF174 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS A U NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 M INCHES MILLIMETERS

Q 4 DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95

RBC0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.5223J0.003 0.007 0.08 0.17

D K 0.435 ––– 11.05 –––M 45 NOM 45 NOM K Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

J U 0.720 0.730 18.29 18.54 C STYLE 2:H PIN 1. SOURCEE SEATING 2. GATE

PLANE 3. SOURCE 4. DRAIN

CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF174

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF174 ◊ MOTOROLA RF DEVICEM RDFA1T7A4/D

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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line .designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output