Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 80 W, 28 V, 175 MHz N–CHANNEL • Guaranteed Performance at 150 MHz, 28 V: BROADBAND Output Power = 80 W RF POWER MOSFETs Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance D • Ruggedness Tested at Rated Outpu...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 80 W, 28 V, 175 MHz N–CHANNEL • Guaranteed Performance at 150 MHz, 28 V: BROADBAND Output Power = 80 W RF POWER MOSFETs Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance

D

• Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz • Excellent Thermal Stability; Suited for Class A Operation G

S

MAXIMUM RATINGS CASE 211–11, STYLE 2 (MRF173) Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 9.0 Adc Total Device Dissipation @ TC = 25°C PD 220 Watts Derate above 25°C 1.26 W/°C CASE 316–01, STYLE 2 Storage Temperature Range Tstg –65 to +150 °C (MRF173CQ) Operating Temperature Range TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA V(BR)DSS 65 — — V Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS — — 2.0 mA Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) IGSS — — 1.0 µA ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 1.0 3.0 6.0 V Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) VDS(on) — — 1.4 V Forward Transconductance (VDS = 10 V, ID = 2.0 A) gfs 1.8 2.2 — mhos (continued) NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF173 MRF173CQ, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss — 110 — pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Coss — 105 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Crss — 10 — pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) NF — 1.5 — dB Common Source Power Gain Gps 11 13 — dB Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) η 55 60 — % Electrical Ruggedness ψ No Degradation in Output Power Load VSWR 30:1 at all phase angles Series Equivalent Input Impedance MRF173 Zin — 2.99– j4.5 — Ohms Series Equivalent Output Impedance MRF173 Zout — 2.68– j1.3 — Ohms Series Equivalent Input Impedance MRF173CQ Zin — 1.35– j5.15 — Ohms Series Equivalent Output Impedance MRF173CQ Zout — 2.72– j149 — Ohms (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) RFC1 R2 C11 C12 VDD = 28 V + + + Vdc R1 C8 C9 Z1 C10 C13 C14 – – – RFC2 D.U.T. RF C16 L3 L4 OUTPUT RF R3 INPUT C1 L1 L2 C4 C5 C15 C6 C7 C2 C3 C1, C15 — 470 pF Unelco L3 — #14 AWG Hairpin 0.8″ long C2, C3, C5 — 9–180 pF, Arco 463 L4 — #14 AWG Hairpin 1.1″ long C4, C6 — 15 pF, Unelco RFC1 — Ferroxcube VK200–19/4B C7 — 5–80 pF, Arco 462 RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID C8, C10, C14, C16 — 0.1 µF R1 — 10 kΩ, 10 Turns Bourns C9, C13 — 50 µF, 50 Vdc R2 — 1.8 kΩ, 1/4 W C11, C12 — 680 pF, Feed Through R3 — 10 kΩ, 1/2 W L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID Z1 — 1N5925A Motorola Zener L2 — #16 AWG Hairpin 1″ long Figure 1. 150 MHz Test Circuit MRF173 MRF173CQ MOTOROLA RF DEVICE DATA,

TYPICAL CHARACTERISTICS

120 80 f = 100 MHz 100 150 MHz f = 100 MHz 80 200 MHz 50 150 MHz 60 40 30 200 MHz VDD = 28 V 20 IDQ = 50 mA 10 VDD = 13.5 V IDQ = 50 mA00012345678910 0 2.0 4.0 6.0 8.0 10 12 14 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

140 140 120 IDQ = 50 mA P = 4.0 W 120 IDQ = 50 mAin P = 8.0Wf= 100 MHz f = 150 MHz in 100 3.0 W 100 6.0 W 80 80 2.0 W 4.0 W 60 60 1.0 W 2.0 W 40 40 20 200010 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

140 22 120 IDQ = 50 mA Pin = 14WP= 80Wf= 200 MHz 18 out VDD = 28 V 100 16 I = 50 mA10 W DQ 60 6.0 W 10 4.0 W 8.0 6.0 20 4.0 0 2.0 10 12 14 16 18 20 22 24 26 28 30 20 40 60 80 100 120 140 160 180 200 220 VDD, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz)

Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF173 MRF173CQ

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) GPS, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), 80 6.0 70 f = 150 MHz Pin = CONSTANT 5.0 VDS = 10 V 60 VDS = 28 V VGS(th) = 3.0 V IDQ = 50 mA 4.050 VGS(th) = 3.0 V 40 3.0 2.0 1.000–14 –12 –10 –8.0 –6.0 –4.0 –2.0 0 2.0 4.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage

1.2 420 140

C

V issDS = 28 V 360 120 1.1 300 100 ID = 3.0 A VGS = 0 V 1.0 1.0 A 240 FREQ = 1 MHz 80 500 mA 180 600.9 Coss 120 40 0.8 50 mA Crss 60 20 0.700–25 0 25 50 75 100 125 150 17504812 16 20 24 28 TC, CASE TEMPERATURE (C°) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 10. Gate–Source Voltage versus Figure 11. Capacitance versus Drain Voltage Case Temperature

5.0 2.0 TC = 25°C 1.0 0.5 0.2 0.1 1.0 2.0 4.0 6.0 10 20 40 60 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 12. DC Safe Operating Area MRF173 MRF173CQ MOTOROLA RF DEVICE DATA

VG S , GATE-SOURCE VOLTAGE (NORMALIZED) Pout, OUTPUT POWER (WATTS) I D , DRAIN CURRENT (AMPS) Coss, CAPACITANCE (pF) I D , DRAIN CURRENT (AMPS) Crss, Ciss, CAPACITANCE (pF), DESIGN CONSIDERATIONS applications. The MRF173/CQ was characterized at IDQ = The MRF173/CQ is a RF MOSFET power N–channel en- 50 mA, which is the suggested minimum value of IDQ. For hancement mode field–effect transistor (FET) designed for special applications such as linear amplification, IDQ may VHF power amplifier applications. Motorola’s RF MOSFETs have to be selected to optimize the critical parameters. feature a vertical structure with a planar design, thus avoid- The gate is a dc open circuit and draws no current. There- ing the processing difficulties associated with V–groove pow- fore, the gate bias circuit may generally be just a simple re- er FETs. sistive divider network. Some special applications may Motorola Application Note AN211A, FETs in Theory and require a more elaborate bias system. Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. GAIN CONTROL The major advantages of RF power FETs include high Power output of the MRF173/CQ may be controlled from its gain, low noise, simple bias systems, relative immunity from rated value down to zero (negative gain) by varying the dc thermal runaway, and the ability to withstand severely mis- gate voltage. This feature facilitates the design of manual gain matched loads without suffering damage. Power output can control, AGC/ALC and modulation systems. (see Figure 8.) be varied over a wide range with a low power dc control sig- nal, thus facilitating manual gain control, ALC and modula- AMPLIFIER DESIGN tion. Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF173/CQ. See DC BIAS Motorola Application Note AN721, Impedance Matching The MRF173/CQ is an enhancement mode FET and, Networks Applied to RF Power Transistors. The higher input therefore, does not conduct when drain voltage is ap- impedance of RF MOSFETs helps ease the task of broad- plied. Drain current flows when a positive voltage is ap- band network design. Both small–signal scattering parame- plied to the gate. See Figure 9 for a typical plot of drain ters and large–signal impedances are provided. While the current versus gate voltage. RF power FETs require for- s–parameters will not produce an exact design solution for ward bias for optimum performance. The value of quies- high power operation, they do yield a good first approxima- centdra in cu r ren t ( IDQ) i s notcriticalformany tion. This is an additional advantage of RF MOS power FETs. MOTOROLA RF DEVICE DATA MRF173 MRF173CQ,

PACKAGE DIMENSIONS A U NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 M INCHES MILLIMETERS

Q 4 DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95

RBC0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.5223J0.003 0.007 0.08 0.17

D K 0.435 ––– 11.05 –––M 45 NOM 45 NOM K Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

J U 0.720 0.730 18.29 18.54 C STYLE 2:H PIN 1. SOURCEE SEATING 2. GATE

PLANE 3. SOURCE 4. DRAIN

CASE 211–11 ISSUE N F D R NOTES:

3 K 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 24.38 25.14 0.960 0.9901B12.45 12.95 0.490 0.510

Q C 5.97 7.62 0.235 0.3002 D 5.33 5.58 0.210 0.220

E 2.16 3.04 0.085 0.120 F 5.08 5.33 0.200 0.210

L H 18.29 18.54 0.720 0.730

J 0.10 0.15 0.004 0.006

B K 10.29 11.17 0.405 0.440C L 3.81 4.06 0.150 0.160 J N 3.81 4.31 0.150 0.170 E Q 2.92 3.30 0.115 0.130 N R 3.05 3.30 0.120 0.130U 11.94 12.57 0.470 0.495 H

STYLE 2:

A U PIN 1. BASE

2. COLLECTOR 3. BASE 4. EMITTER

CASE 316–01 ISSUE D MRF173 MRF173CQ MOTOROLA RF DEVICE DATA

, MOTOROLA RF DEVICE DATA MRF173 MRF173CQ, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF173 MRF173CQ ◊ MOTOROLA RF DEVICMER DFA1T7A3/D

]
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