Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 500 MHz Gain = 13 dB TMOS BROADBAND Efficiency = 50% RF POWER FET • Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 500 MHz Gain = 13 dB TMOS BROADBAND Efficiency = 50% RF POWER FET • Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss — 4.5 pF @ VDS = 28 Volts • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 412–01, Style14FLANGE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc Gate–Source Voltage VGS ± 40 Adc Drain Current — Continuous ID 8.0 ADC Total Device Dissipation @ TC = 25°C PD 175 Watts Derate above 25°C 1.0 °C/W Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.0 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV1MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF166W, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 5.0 mA) 65 — — Zero Gate Voltage Drain Current IDSS mA (VDS = 28 Vdc, VGS = 0 Vdc) — — 1.0 Gate–Source Leakage Current IGSS µA (VGS = 40 Vdc, VDS = 0 Vdc) — — 1.0 ON CHARACTERISTICS (1) Gate Threshold Voltage VGS(th) Vdc (VDS= 10 Vdc, ID = 25 mA) 1.0 3.0 6.0 Forward Transconductance gfs mS (VDS= 10 Vdc, ID = 1.5 A) 600 800 — DYNAMIC CHARACTERISTICS (1) Input Capacitance Ciss pF (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) — 30 — Output Capacitance Coss pF (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) — 35 — Reverse Transfer Capacitance Crss pF (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) — 4.5 — FUNCTIONAL CHARACTERISTICS (2) Common Source Power Gain Gps dB (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) 11 13 — Drain Efficiency η % (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) 45 50 — Electrical Ruggedness Ψ (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) No Degradation in Output Power Load VSWR = 30:1, All phase angles at frequency of test (1) Each transistor chip measured separately. (2) Both transistor chips operating in a push–pull amplifier. MRF166W MOTOROLA RF DEVICE DATA,

B

R7 RFC1 VDD 28 V + A R1 C14 D1 C17 + R2 C22 C15 C16 C18 Vdc– – RFC2 A C10 T1 C21 C13 Z8 C8 R4 R3 T2 C2 Z2 L1 Z3 Z7 RF INPUT C23 L3 Z5 D.U.T. C6 C7 C3 C5 RF OUTPUTC4 Z6 C1 Z1 L2 Z4 L4 Z9 Z10 C9 R5 R6 C11ABC20 C12 RFC3 C19 L3, L4 L1, L2 0.116″ 0.065″ 0.265″ 0.455″ C1, C2, C8, C9, 270 pF, Chip Cap RFC1 Ferroxcube VK–200–19/4B C12, C13, C15 RFC2, RFC3 10T, ID = 1/4″, 18 AWG C3 5.6 pF, Chip Cap R1 10 kΩ, 10T C4 20 pF, Chip Cap R2 9.2 kΩ, 1/2 W C5 0 – 20 pF, Johanson* R3, R6 330 Ω, 1.0 W C6 8.2 pF, Chip Cap R4 R5 520 Ω, 1/4 W C7 15 pF, Chip Cap R7 1.5 kΩ, 1/2 W C10, C11, C14, C19, 0.01 µF T1, T2 Balun 2.0″, 50 Ω Semi–Rigid Coax C20, C21, C22 Z1, Z2 0.120 x 0.467″ C16, C17 680 pF, Feedthru Z3, Z4 0.120 x 0.55″ * C18 10 µF, 50 V Z5, Z6 0.120 x 0.49″ C23 0 – 10 pF, Johanson* Z7, Z9 0.120 x 0.85″ D1 IN5343 – Motorola Zener Z8, Z10 0.120 x 0.6″ for C6 L1, L2 Hair Pin Inductor #18 AWG, 0.065Wx0.265 H * C4, C5 Center of Z3 and Z4 L3, L4 Hair Pin Inductor #18 AWG, Board Material – Teflon Fiberglass 0.116Wx0.445 H Dielectric Thickness = 0.030″, εr = 2.55 Copper Clad, 2.0 oz. Copper Figure 1. MRF166 400 MHz Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF166W, 50 45 f = 175 MHz f = 400 MHz Pin = 3.0 W45 400 MHz 40 IDQ = 100 mA 40 35 2.0 W 35 500 MHz 30 25 1.0 W 15 0.5 W 10 10 VDD = 28 Vdc5 5 IDQ = 200 mA000123412 14 16 18 20 22 24 26 28 Pin, INPUT POWER (WATTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Voltage

40 100 VDD = 28 Vdc 90 VGS = 0 V35 IDQ = 100 mA f = 1.0 MHz TYPICAL DEVICE SHOWN, 70 25 CVGS(th) = 3.0 V oss 20 50 f = 400 MHz 15 40 Ciss 5 10 Crss00–10 – 9 – 8 –7 – 6 – 5 – 4 – 3 – 2 –1012304812 16 20 24 28 VGS, GATE–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 4. Output Power versus Gate Voltage Figure 5. Capacitance versus Voltage MRF166W MOTOROLA RF DEVICE DATA

Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS), f = 500 MHz Zin 400 ZOL* f = 500 MHz Zo = 50 Ω VDD = 28 Vdc, IDQ = 100 mA, Pout = 40WfZin ZOL* MHz Ohms Ohms ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 175 3.7 – j 22.4 15.2 – j 16.6 400 3.6 – j 10.99 10.3 – j 7.99 NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively. 500 2.6 – j 3.2 10.2 + j 0.5

Table 1. Input and Output Impedances Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF166W

,

PACKAGE DIMENSIONS

–A–

U NOTES:Q 2 PL 1. DIMENSIONING AND TOLERANCING G 0.51 (0.020) TABPER ANSI Y14.5M, 1982.MMM2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS DIM MIN MAX MIN MAX12A0.965 0.985 24.52 25.01

K B 0.245 0.265 6.23 6.73–B– C 0.165 0.185 4.20 4.69

345D0.050 0.070 1.27 1.77 E 0.070 0.080 1.78 2.03 G 0.254 BSC 6.45 BSC H 0.095 0.105 2.42 2.66 J 0.003 0.006 0.08 0.15

D 4 PL K 0.625 0.675 15.88 17.14

N 0.495 0.520 12.58 13.20 0.51 (0.020) MTAMBMQ0.120 0.140 3.05 3.55 U 0.725 BSC 18.42 BSC

N STYLE 1:J E PIN 1. DRAIN

2. DRAIN

C 3. GATE H 4. GATE

–T– SEATING 5. SOURCEPLANE

CASE 412–01 ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF166W ◊ MOTOROLA RF DEVIMCREF D16A6TWA/D

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DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test Total Quality Management results are used f