Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET Output Power = 20 W BROADBAND Gain = 17 dB RF POWER FETs Efficiency = 55% • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Exc...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 239 Views: 1070

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz • MRF166C — Typical Performance at 400 MHz, 28 Vdc MOSFET Output Power = 20 W BROADBAND Gain = 17 dB RF POWER FETs Efficiency = 55% • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D CASE 319–07, STYLE 3

G S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–Gate Voltage VDGR 65 Vdc (RGS = 1.0 MΩ) Gate–Source Voltage VGS ±40 Adc Drain Current — Continuous ID 4.0 Adc Total Device Dissipation @ TC = 25°C PD 70 Watts Derate Above 25°C 0.4 W/°C Storage Temperature Range Tstg –65 to 150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.5 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV7MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF166C, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS 65 — — V (VGS = 0 V, ID = 5.0 mA) Zero Gate Voltage Drain Current IDSS — — 1.0 mA (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current IGSS — — 1.0 µA (VGS = 40 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 3.0 6.0 V (VDS = 10 V, ID = 25 mA) Forward Transconductance gfs 600 800 — mhos (VDS = 10 V, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 30 — pF (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Coss — 35 — pF (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance Crss — 4.5 — pF (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure NF — 2.5 — dB (VDD = 28 V, f = 30 MHz, IDQ = 50 mA) Common Source Power Gain Gps 14 17 — dB (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) Drain Efficiency η 50 55 — % (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA, ψ No Degradation in Output Power Load VSWR 30:1 at All Phase Angles) MRF166C MOTOROLA RF DEVICE DATA, RFC1 VDD = 28 V R2 C10 C11 + R3 + + C4 C13 D1 C8 C12 Vdc – – – RFC2 R4 C9 RF OUTPUTZ5 Z6 Z7 R1 RF INPUT C7 Z1 Z2 L1 Z3 L2 C5 C6 C1 Z4 C2 C3 D.U.T. C1, C7 — 270 pF Chip Capacitor L1 — #18 AWG, 2 Turns, 0.25″ ID 0.15″ Wide C2, C6 — Johanson Trimmer Capacitor, 2–20 pF L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin C3 — 21 pF Mini Unelco RFC1 — Ferroxcube VK200–19/4B C4, C8, C9 — 0.01 µF RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID C5 — 18 pF Mini Unelco R1 — 220 Ω 1/2 Watt C10, C11 — 680 pF Feed Through R2 — 1.8 kΩ 1/4 Watt C12, C13 — 50 µF, 50 V R3 — 10 kΩ, 10 Turns Bourns D1 — 1N5925A Motorola Zener R4 — 10 k 1/4 Watt Z1 — Microstrip Line 0.150″ wide, 0.420″ long Z2 — Microstrip Line 0.150″ wide, 0.350″ long Z3 — Microstrip Line 0.150″ wide, 0.350″ long Board Material — Teflon fiberglass Z4 — Microstrip Line 0.150″ wide, 0.450″ long 2 oz. Copper clad both sides, εr = 2.55 Z5 — Microstrip Line 0.150″ wide, 1.1″ long 0.060″ Dielectric Thickness Z6 — Microstrip Line 0.150″ wide, 0.650″ long Z7 — Microstrip Line 0.150″ wide, 0.200″ long

Figure 1. MRF166C 400 MHz Test Circuit TYPICAL CHARACTERISTICS

100 10 50 Coss TC = 25°C 20 Ciss 1015Crss VGS = 0V2f= 1 MHz 1 0.10510 15 20 25 0 10 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain–Source Voltage Figure 3. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF166C

C, CAPACITANCE (pF) I D, DRAIN CURRENT (AMPS),

TYPICAL CHARACTERISTICS

35 16 30 14 25 f = 400 MHz 12 20 10 f = 400 MHz 500 MHz 10 VDS = 28 V IDQ = 100 mA 4 VDS = 13.5V52IDQ = 100 mA0000.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 4. Output Power versus Input Power Figure 5. Output Power versus Input Power

f = 400 MHz 28 IDQ = 100 mA Pin = 0.8 W 20 0.4 W 12 0.2 W 12 14 16 18 20 22 24 26 28 VDS, DRAIN–SOURCE (VOLTS)

Figure 6. Output Power versus Voltage

400 f = 500 MHz VDD = 28 V, IDQ = 100 mA f = 500 MHz 200 400 f Zin ZOL* Zin 200 MHz OHMS OHMS ZOL* (Pout = 20 W) 100 11.0 – j21.0 8.50 – j10.0 200 4.20 – j12.6 6.00 – j9.00 100 400 1.90 – j5.80 4.50 – j6.70Zo = 50 Ω 500 1.50 – j4.10 4.20 – j5.40 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.

Figure 7. Series Equivalent Input and Output Impedance MRF166C MOTOROLA RF DEVICE DATA

Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS),

PACKAGE DIMENSIONS

-A- Q 2 PL

IDENTIFICATION L 0.15 (0.006) MTAMNM NOTCH NOTES:

6541. DIMENSIONING AND TOLERANCING PERANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N- INCHES MILLIMETER DIM MIN MAX MIN MAX123A0.965 0.985 24.52 25.01K B 0.355 0.375 9.02 9.52 C 0.230 0.260 5.85 6.60

F D 0.115 0.125 2.93 3.17

E 0.102 0.114 2.59 2.90

D 2 PL F 0.075 0.085 1.91 2.15

0.38 (0.015) MTAMNMH0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 L 0.725 BSC 18.42 BSC

B 0.38 (0.015) MTAMNMN0.225 0.241 5.72 6.12

Q 0.125 0.135 3.18 3.42

J

STYLE 3:

C PIN 1. SOURCE (COMMON) H 2. GATE (INPUT)E 3. SOURCE (COMMON)

-T- SEATING 4. SOURCE (COMMON) PLANE 5. DRAIN (OUTPUT) 6. SOURCE (COMMON)

CASE 319–07 ISSUE M MOTOROLA RF DEVICE DATA MRF166C

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF166C ◊ MOTOROLA RF DEVICMER FD1A6T6AC/D

]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 30 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRAN
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 6.0 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Effi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF157/D The RF Power MOS Line N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this devi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitt
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications Motorola Preferred Device such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025–1150 MHz MICROWA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line !
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line ! .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W, to 400 MHz MRF136
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz •
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line .designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line .designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output
Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D NPN Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector–Emitter Voltage VCEO 300 200 Vdc CASE 29–11, STYLE 1 TO–92 (TO–226AA) Collector–Base Voltage VCBO 300 200 Vdc Emitte
DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test Total Quality Management results are used f
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D  Medium Power Surface Mount Products
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS Dual HDTMOS devices are an advanced series of power POWER MOSFET MOSFETs which utilize Motorola’s High Cell Density TMOS 30 VOLTS process. These miniature surface
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D  Medium Power Surface Mount Products DUAL TMOS
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola’s High Cell Density TMOS 20 VOLTS process. These minia