Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to 400 MHz MOSFET BROADBAND • Excellent Thermal Stability, Ideally Suited for Class A Operation RF POWER FET • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.8 pF Typical at VDS = 28 Volts CASE 249–06, STY...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to 400 MHz MOSFET BROADBAND • Excellent Thermal Stability, Ideally Suited for Class A Operation RF POWER FET • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.8 pF Typical at VDS = 28 Volts CASE 249–06, STYLE 3

D G S

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc Gate–Source Voltage VGS ± 40 Vdc Drain Current–Continuous ID 1.0 ADC Total Device Dissipation @ TC = 25°C PD 24 Watts Derate Above 25°C 0.14 W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 7.2 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV2MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF160, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS Vdc (VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA) 65 — — Zero Gate Voltage Drain Current IDSS mA (VDS = 28 Vdc, VGS = 0 V) — — 0.8 Gate–Source Leakage Current IGSS µA (VGS = 40 Vdc, VDS = 0 Vdc) — — 1.0 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Vdc (VDS = 10 Vdc, ID = 10 mA) 1.0 3.0 6.0 Drain Source On–Voltage VDS(on) Vdc (VDS (on), VGS = 10 Vdc, ID = 500 mA) — 3.8 — Forward Transconductance gfs mS (VDS = 10 Vdc, ID = 250 mA) 110 160 — DYNAMIC CHARACTERISTICS Input Capacitance Ciss pF (VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz) — 6.0 — Output Capacitance Coss pF (VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz) — 8.0 — Reverse Transfer Capacitance Crss pF (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) — 0.8 — FUNCTIONAL CHARACTERISTICS Common Source Power Gain Gps dB (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) 15 17 — Drain Efficiency η % (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) 45 50 — Electrical Ruggedness ψ (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) No Degradation in Output Power Load VSWR = 30:1 at All Phase Angles at Frequency of Test Series Equivalent Input Impedance Zin Ohms (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) — 5.23–j 27.2 — Series Equivalent Output Impedance Zout Ohms (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) — 14.7–j 31.2 — MRF160 MOTOROLA RF DEVICE DATA, R4 RFC1 VDD 28 V + R3 C7 D1 C8 C9 C10 + C11 Vdc – – RFC2 R2 L3 C6 Z5 Z6 C5 Z7 RF OUTPUT R1 RF INPUT Z1 C1 L1 Z2 Z3 C4 L2 Z4 D.U.T. C2 C3 0.240″ 0.95″ 0.65″ 0.55″ L2 L3 C1, C5 220 pF, Chip Capacitor R3 10 kΩ, 10 Turns Bourns C2 18 pF, ATC Chip Capacitor R4 1.8 kΩ, 1/4 Watt C3 2.0–20 pF, Johanson Trimmer Capacitor RFC1 Ferroxcube VK200–19/4B C4 2.0–10 pF, Johanson Trimmer Capacitor RFC2 10 Turns, #20 AWG, Enameled Close C6, C7, C8 0.1 µF Wound, 0.250″ ID C9, C10 680 pF, Feed Through Z1 Microstrip Line 0.167″ wide, 0.820″ long C11 50 µF, 50 V Z2 Microstrip Line 0.240″ wide, 0.240″ long L1 #20 AWG, 1 Turn 0.255″ ID Z3 Microstrip Line 0.240″ wide, 0.240″ long L2 #20 AWG, Hairpin 1.3″ long, bend into hairpin Z4 Microstrip Line 0.230″ wide, 0.590″ long L3 #20 AWG, Hairpin 1.1″ long, bend into hairpin Z5 Microstrip Line 0.230″ wide, 0.580″ long R1 160 Ω, 1/2 Watt Z6 Microstrip Line 0.167″ wide, 0.620″ long R2 10 kΩ, 1/2 Watt Z7 Microstrip Line 0.167″ wide, 0.800″ long Board Material 0.060″ Glass Teflon 2 oz. Copper clad both sides εr = 2.55

Figure 1. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF160

,

Typical Characteristics

66f= 400 MHz 5 VDS = 28 Vdc 5 Pin = 250 mWIDQ = 50 mA44f= 500 MHz 150 mW3350 mW22f= 400 MHz1V= 13.5 Vdc1f= 400 MHzDS I = 50 mA IDQ = 50 mADQ00050 100 150 800 250 12 14 16 18 20 22 24 26 28 PIN, INPUT POWER (mW) VDS, SUPPLY VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Voltage

40 4 35 3.5 30 Typical Device Shown 3 VDD = 28 V VDS = 28VI= 100 mA IDQ = 50 mA25 DQ 2.5 VGS(th) = 3 V Pin = Constant 20 2 15 1.5 f = 400 MHz 10 f = 400 MHz150.500–10 –8 –6 –4 –20246810 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, GATE–SOURCE VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 4. Output Power versus Gate Voltage Figure 5. Output Power versus Gate Voltage

32 10 28 f = 1.0 MHz VGS = 0 V 12 Coss 0.1 8 Ciss 4 Crss0004812 16 20 24 280110 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN VOLTAGE (VOLTS)

Figure 6. Capacitance versus Drain–Source Voltage Figure 7. DC Safe Operating Area MRF160 MOTOROLA RF DEVICE DATA

C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) ID, DRAIN CURRENT (AMPS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS), f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 10 0.96 – 2.0 14.47 177 0.01 96 1.11 – 5.0 30 0.99 –16 13.34 169 0.02 79 0.92 –11 50 0.97 – 28 12.96 159 0.03 70 0.90 – 22 75 0.94 – 40 12.24 148 0.04 60 0.87 – 35 100 0.90 – 52 11.40 139 0.05 51 0.84 – 45 120 0.87 – 61 10.70 132 0.05 45 0.81 – 53 150 0.83 –72 9.66 123 0.06 37 0.77 – 63 170 0.81 –79 9.05 118 0.06 33 0.75 – 69 200 0.78 – 88 8.21 110 0.06 26 0.72 –77 220 0.77 – 93 7.67 106 0.07 23 0.71 – 81 250 0.75 –100 7.00 100 0.07 18 0.69 – 87 300 0.72 –110 6.00 92 0.07 12 0.67 – 96 350 0.71 –118 5.24 84 0.07 6.0 0.66 –103 390 0.71 –124 4.73 79 0.07 1.0 0.66 –108 400 0.70 –125 4.63 77 0.07 0 0.67 –109 410 0.70 –127 4.52 76 0.07 –1.0 0.66 –110 450 0.70 –131 4.10 71 0.07 – 5.0 0.66 –114 470 0.70 –133 3.93 69 0.06 – 6.0 0.67 –116 500 0.70 –137 3.68 65 0.06 – 8.0 0.67 –118 600 0.71 –145 3.01 55 0.06 –14 0.69 –126 700 0.72 –153 2.51 46 0.05 –18 0.71 –132 800 0.73 –160 2.13 37 0.04 – 21 0.73 –137 900 0.75 –166 1.83 30 0.03 –19 0.75 –142 1000 0.76 –171 1.60 23 0.03 –10 0.77 –146 1100 0.77 –177 1.40 16 0.02 3.0 0.79 –151 1200 0.78 177 1.25 10 0.02 18 0.80 –155 1300 0.79 172 1.11 4.0 0.03 29 0.82 –159 1400 0.81 166 1.00 –1.0 0.03 35 0.83 –163 1500 0.81 161 0.90 – 6.0 0.03 48 0.85 –166 Table 1. Common Source Scattering Parameters (VDS = 28 Vdc, ID = 200 mA, 50 Ω System) MOTOROLA RF DEVICE DATA MRF160, f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 10 0.96 – 4.0 16.09 176 0.01 85 1.08 – 8.0 20 1.00 –15 14.82 171 0.02 82 0.88 –10 30 0.98 – 23 14.64 164 0.03 73 0.89 – 20 50 0.94 – 39 13.76 152 0.04 63 0.86 – 38 85 0.86 – 61 11.81 134 0.06 47 0.79 – 61 150 0.73 – 91 8.63 112 0.08 27 0.70 – 91 170 0.71 – 97 7.90 107 0.09 23 0.68 – 98 200 0.68 –106 6.97 101 0.09 17 0.67 –106 210 0.68 –109 6.68 99 0.09 15 0.66 –108 250 0.66 –117 5.75 92 0.09 10 0.65 –116 300 0.64 –126 4.85 84 0.09 4.0 0.64 –124 350 0.64 –133 4.18 78 0.09 –1.0 0.64 –129 390 0.64 –137 3.75 73 0.09 – 5.0 0.65 –133 400 0.64 –138 3.66 71 0.09 – 6.0 0.65 –134 410 0.64 –140 3.57 70 0.09 –7.0 0.65 –135 450 0.64 –143 3.23 66 0.08 –10 0.66 –138 470 0.65 –145 3.08 64 0.08 –11 0.66 –139 500 0.65 –147 2.88 61 0.08 –13 0.67 –141 550 0.66 –151 2.59 56 0.08 –16 0.67 –144 600 0.67 –154 2.35 52 0.07 –18 0.68 –146 700 0.69 –160 1.96 43 0.07 – 22 0.71 –150 800 0.70 –166 1.67 35 0.06 – 25 0.73 –154 900 0.72 –171 1.43 28 0.05 – 24 0.75 –158 1000 0.74 –177 1.26 22 0.04 – 21 0.77 –161 1100 0.74 178 1.11 16 0.04 –14 0.78 –164 1200 0.76 173 0.99 10 0.04 – 6.0 0.80 –168 1300 0.78 168 0.88 5.0 0.04 2.0 0.81 –171 1400 0.79 163 0.80 0 0.03 8.0 0.83 –174 1500 0.80 158 0.72 – 5.0 0.03 19 0.84 –177 Table 2. Common Source Scattering Parameters (VDS = 12.5 Vdc, ID = 200 mA, 50 Ω System) MRF160 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D 2. CONTROLLING DIMENSION: INCH.3 1 3. SEATING PLANE = GROUND AND IS CONNECTED

TO PIN 1 AND 3.

K 4 INCHES MILLIMETERS M DIM MIN MAX MIN MAX

A 0.271 0.286 6.88 7.26 C 0.112 0.136 2.84 3.45 D 0.215 0.235 5.46 5.97 H 0.055 0.065 1.40 1.65 J 0.003 0.007 0.08 0.18 K 0.435 ––– 11.05 –––

HJAM45 REF 45 REF C SEATING STYLE 3:

PLANE PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN

CASE 249–06 ISSUE H MOTOROLA RF DEVICE DATA MRF160

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF160 ◊ MOTOROLA RF DEVICEM RDFA1T6A0/D

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