Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 6.0 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRANSISTOR Output Power = 6 Watts NPN SILICON Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Me...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line RF Power Transistor

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • 6.0 WATTS, 1.6 GHzSpecified 28 Volt, 1.6 GHz Class–C Characteristics RF POWER TRANSISTOR Output Power = 6 Watts NPN SILICON Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current IC 1.0 Adc Total Device Dissipation @ TC = 25°C PD 26 Watts Derate above 25°C 0.15 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) RθJC 6.8 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV2MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF16006, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CES Vdc (IC = 40 mAdc, VBE = 0) 55 — — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 40 mAdc, IE = 0) 55 — — Emitter–Base Breakdown Voltage V(BR)EBO Vdc (IE = 2.5 mAdc, IC = 0) 4.0 — — Collector Cutoff Current ICES mAdc (VCE = 28 Vdc, VBE = 0) — — 2.5 ON CHARACTERISTICS DC Current Gain hFE — (ICE = 0.2 Adc, VCE = 5.0 Vdc) 20 — 80 DYNAMIC CHARACTERISTICS Output Capacitance Cob pf (VCB= 28 Vdc, f = 1.0 MHz) 11 — — FUNCTIONAL TESTS Common–Base Amplifier Power Gain Gpe dB (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) 7.4 — — Collector Efficiency η % (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) 40 45 — Return Loss IRL dB (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) — 8.0 — Output Mismatch Stress ψ (VCC = 28 Vdc, Pout = 6 Watts, f = 1600 MHz, Load No Degradation in Output Power VSWR = 3:1 all phase angles at frequency of test) MRF16006 MOTOROLA RF DEVICE DATA, L3 B1 28 Vdc R1 L2 C1 C2 C3 C4 L1 C5 Board Material – Teflon Glass Laminate Dielectric Thickness – 0.30″, εr = 2.55″, 2.0 oz. Copper B1 Fair Rite Bead on #24 Wire C4 47 µF, 50 V, Electrolytic Cap C1, C5 100 pF, B Case, ATC Chip Cap L1, L2 3 Turns, #18, 0.133″ ID, 0.15″ Long C2 0.1 µF, Dipped Mica Cap L3 9 Turns, #24 Enamel C3 0.1 µF, Chip Cap R1 82 Ω, 1.0 W, Carbon Resistor

Figure 1. MRF16006 Test Fixture Schematic Z

f = 1.5 GHz in 1.7 GHz 1.6 GHz Zo = 10 Ω1.7 GHz 1.6 GHz ZOL* f = 1.5 GHz VCC = 28 Vdc, Pout = 6WfZin ZOL* MHz Ohms Ohms Z * = Conjugate of the optimum load impedance into which the device 1500 6.28 + j 8.53 1.22 – j 1.37 OLoutput operates at a given output power, voltage and frequency. 1600 7.04 + j 9.00 1.58 – j 0.53 1700 9.55 + j 12.86 1.71 + j 0.39

Figure 2. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF16006

, f = 1.6 GHz 1.64 GHz 4 VCC = 28 Vdc 0.25 0.45 0.65 0.85 1.05 1.25 1.45 Pin, INPUT POWER (WATTS)

Figure 3. Output Power versus Input Power MRF16006 MOTOROLA RF DEVICE DATA

Pout , OUTPUT POWER (WATTS),

PACKAGE DIMENSIONS

–A–

UQ2PL

1 0.51 (0.020) MTAMBMNOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– INCHES MILLIMETERS 3 DIM MIN MAX MIN MAX A 0.739 0.750 18.77 19.05 B 0.240 0.260 6.10 6.60 C 0.165 0.198 4.19 5.03

K D 0.215 0.225 5.46 5.72

E 0.055 0.070 1.40 1.782H0.079 0.091 2.01 2.31 J 0.004 0.006 0.10 0.15 K 0.210 0.240 5.33 6.10

D STYLE 2:PIN 1. EMITTER N 0.315 0.330 8.00 8.38

2. COLLECTOR Q 0.125 0.135 3.18 3.42

N 3. BASE U 0.560 BSC 14.23 BSCE J C H

–T– SEATING

PLANE CASE 395C–01 ISSUE A MOTOROLA RF DEVICE DATA MRF16006

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF16006 ◊ MOTOROLA RF DEVIMCREF D16A0T0A6/D

]
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