Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Efficiency = 55% (Typical) TMOS • Grounded Source Package for High Gain and Excellent Heat BROADBAND RF POWER FET Dissipation (MRF158R) • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Excellent Thermal Stability, Ideal...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF158/D The RF TMOS Line N–Channel Enhancement Mode

Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB 2.0 W, to 500 MHz Efficiency = 55% (Typical) TMOS • Grounded Source Package for High Gain and Excellent Heat BROADBAND RF POWER FET Dissipation (MRF158R) • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

D G

CASE 305A–01, STYLE 2

S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 0.5 Adc Total Device Dissipation @ TC = 25°C PD 8.0 Watts Derate above 25°C 45 mW/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 13.2 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF158, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 0.5 mAdc Gate–Source Leakage Current (VGS = 40 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) VGS(th) 1.0 4.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 100 mA) gfs 50 85 — mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 3.0 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 4.2 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 0.45 — pF FUNCTIONAL CHARACTERISTICS (Figure 1) Common Source Power Gain Gps 16 20 — dB (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Drain Efficiency (Figure 1) η 45 55 — % (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Electrical Ruggedness (Figure 1) ψ (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA, No Degradation in Output Power VSWR 30:1 at all Phase Angles) Series Equivalent Input Impedance Zin — 8.8 – j27.37 — Ohms (VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Series Equivalent Output Impedance Zout — 16.96 – j62 — Ohms (VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) MRF158 MOTOROLA RF DEVICE DATA, D1 R4 C10 RFC1 C11 VDD 28 V + R3 + C12 C8 C9 VDC – R2 RFC2 RF OUTPUT Z5 Z6 Z7 Z8 C7 R1 L2 L3 RF INPUT Z1 C2 C6Z2 Z3 C4 C5 L1 C3 Z4 C1 D.U.T. C1, C4, C5 — Johanson Trimmer Capacitor, 2–20 pF R1 — 91 Ω 1/2 Watt C2, C6 — 270 pF Chip Capacitor R2 — 10 kΩ 1/2 Watt C3 — Arco 404 R3 — 10 kΩ, 10 Turns Bourns C7, C8, C9 — 0.1 µF R4 — 1.8 k 1.4 Watt C10, C11 — 680 pF Feed Through L1 RFC1 — Ferroxcube VK200–19/4B C12 — 50 µF, 50 V 0.245″ RFC2 — 10 Turns #20 AWG Enameled, 0.250″ ID D1 — 1N5925A Motorola Zener Z1 — Microstrip Line 0.150″ wide, 0.420″ long L1 — #18 AWG, Hairpin 0.825″ long, bend 0.330″ Z2 — Microstrip Line 0.150″ wide, 0.420″ long into hairpin Z3 — Microstrip Line 0.150″ wide, 0.475″ long L2 — #18 AWG, Hairpin 0.875″ long, bend Z4 — Microstrip Line 0.150″ wide, 0.825″ long into hairpin Z5 — Microstrip Line 0.150″ wide, 0.750″ long L3 — #18 AWG, Hairpin 0.965″ long, bend 0.240″ Z6 — Microstrip Line 0.150″ wide, 0.500″ long into hairpin 0.390″ Z7 — Microstrip Line 0.150″ wide, 0.500″ long L2 Z8 — Microstrip Line 0.150″ wide, 0.450″ long Board Material — 0.062″, Teflon Fiberglass, 2 oz., Copper clad both sides, ∈r = 2.55 0.235″ 0.475″ L3

Figure 1. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF158

,

TYPICAL CHARACTERISTICS

1015Coss 2 Ciss 1 0.1 Crss 0.5 VGS = 0 V 0.2 f = 1 MHz 0.1 0.010510 15 20 25 1 10 100 VDS,DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain–Source Voltage Figure 3. DC Safe Operating Area

3.2 3.2 Pin = 80 mW 2.8 f = 400 MHz 2.8 2.4 2.4 500 MHz 50 mW221.6 1.6 20 mW 1.2 1.2 VDS = 28Vf= 400 MHz 0.8 IDQ = 100 mA 0.8 IDQ = 100 mA 0.4 0.40020 40 60 80 100 10 12 14 16 18 20 22 24 26 28 30 Pin, INPUT POWER (mW) VDS, DRAIN–SOURCE VOLTAGE (VOLTS))

Figure 4. Output Power versus Input Power Figure 5. Output Power versus Voltage Table 1. Typical Common Emitter S–Parameters

VDS I

S

D f 11 S21 S12 S22 (Volts) (mA) (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 28 100 5 1.00 –2.0 3.84 –179 0.003 73 0.97 –2.0 10 1.00 –2.0 3.81 179 0.004 83 0.97 –2.0 30 1.00 –7.0 3.74 174 0.011 81 0.97 –6.0 50 1.00 –11 3.72 170 0.018 78 0.96 –9.0 100 0.98 –21 3.62 159 0.034 70 0.95 –19 200 0.93 –41 3.28 137 0.061 52 0.90 –35 300 0.88 –58 2.88 120 0.077 39 0.86 –50 400 0.83 –75 2.57 104 0.088 27 0.81 –63 500 0.79 –87 2.24 91 0.090 17 0.78 –74 600 0.75 –99 1.94 78 0.084 8.0 0.75 –84 700 0.73 –110 1.72 68 0.077 2.0 0.75 –93 800 0.72 –120 1.52 58 0.067 –3.0 0.75 –99 900 0.71 –130 1.35 48 0.055 –6.0 0.74 –108 1000 0.71 –139 1.18 40 0.043 –4.0 0.73 –114

MRF158 MOTOROLA RF DEVICE DATA

Pout, OUTPUT POWER (WATTS) C, CAPACITANCE (pF) Pout, OUTPUT POWER (WATTS) I D , DRAIN CURRENT (AMPS),

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

K D INCHES MILLIMETERS

DIM MIN MAX MIN MAX4A0.200 0.220 5.08 5.5913C0.095 0.130 2.41 3.302D0.055 0.065 1.40 1.65 F 0.025 0.035 0.64 0.89 H 0.040 0.050 1.02 1.27 J 0.003 0.007 0.08 0.18 K 0.435 ––– 11.05 –––

F M 45 REF 45 REF

STYLE 2:

J A PIN 1. SOURCE

2. GATE

C 3. SOURCE

4. DRAIN

H CASE 305A–01 ISSUE A MOTOROLA RF DEVICE DATA MRF158

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF158 ◊ MOTOROLA RF DEVICEM RDFA1T5A8/D

]
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