Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) 600 W, 50 V, 80 MHz Efficiency = 45% (Typ) N–CHANNEL BROADBAND RF POWER MOSFETDGCASE 368–03, STYLE2S(HOG PAC) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 60 Adc Total Device...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 78 Views: 351

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF154/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) 600 W, 50 V, 80 MHz Efficiency = 45% (Typ) N–CHANNEL

BROADBAND

RF POWER MOSFET

D G

CASE 368–03, STYLE2S(HOG PAC) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 60 Adc Total Device Dissipation @ TC = 25°C PD 1350 Watts Derate above 25°C 7.7 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.13 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV2MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF154, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 20 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 5.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 40 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 20 A) gfs 16 20 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 1600 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 950 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 175 — pF FUNCTIONAL TESTS Common Source Amplifier Power Gain Gps — 17 — dB (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Drain Efficiency η — 45 — % (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Intermodulation Distortion IMD(d3) — –25 — dB (VDD = 50 V, Pout = 600 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA) + + 0 – 6 V – R1 L2 L3 C5 C6 C20 C21 50 V –

DUT

R2 C14 C15 C16 C17 C18 C19 C4 RF L1 C10 C11 C12

INPUT

C3 C7 C13 C1 C2 C9

RF

T1 OUTPUT C1, C3, C8 — Arco 469 C8 C2 — 330 pF C4 — 680 pF C5, C19, C20 — 0.47 µF, RMC Type 2225C C6, C7, C14, C15, C16 — 0.1 µF C9, C10, C11 — 470 pF C12 — 1000 pF C13 — Two Unencapsulated 1000 pF Mica, in Series R1, R2 — 10 Ohms/2.0 W Carbon C17, C18 — 0.039 µF T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola C21 — 10 µF/100 V Electrolytic T1 — Application Note AN749, Figure 4 for details. L1 — 2 Turns #16 AWG, 1/2″ ID, 3/8″ Long T1 — Ferrite Material: 2 Each, Fair–Rite Products L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801 T1 — Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit MRF154 MOTOROLA RF DEVICE DATA, 25 800 600 VDD = 50 V 20 400 40 V 150010 20 (IDQ = 800 mA)10 800 VDD = 50 V 600 IDQ = 800 mA 5 Pout = 600 W 400 VDD = 50 V 200 40V002510 20 50 100 200 0 50 100 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

100 10,000

V

5000 GS = 0 V TC = 25°C f = 1 MHz 2000 Ciss Coss 10 1000 200 Crss 1 100 2 20 20012510 20 50 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN VOLTAGE (VOLTS)

Figure 4. DC Safe Operating Area Figure 5. Capacitance versus Drain Voltage

40 600 30 TYPICAL DEVICE SHOWN VDS = 30 V VDS = 10 V VGS(th) = 3.5 V 400 gfs = 24 mhos 15 V 20 3000002468020 40 60 VGS, GATE–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 6. Gate Voltage versus Drain Current Figure 7. Common Source Unity Gain Frequency

versus Drain Current

MOTOROLA RF DEVICE DATA MRF154

IDS, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) POWER GAIN (dB) C, CAPACITANCE (pF) P , OUTPUT POWER (WATTS) ft , UNITY GAIN FREQUENCY (MHz) out 100 MHz 30 MHz, f = 100 MHz Zin VDD = 50 V7.5 IDQ = 800 mA

P

4.0 out = 600 W 2.0 Zo = 10 Ω

Figure 8. Series Equivalent Impedance

BIAS L1 L2R13 C10 D2 +– R9 40 V 30 – 40 V D.U.T.R1 + – + C2 C5 R5 R6 C8 C4 R4 INPUT R11 XTR C6 OUTPUT IC1

XTR

R7 R12 C7 T1 R3 C1 C9 D1 T2 D3 R10 R2 D.U.T. C3 R14 C11 R8 TEMP. TRACKING C1 — 1000 pF Ceramic R7 — 10 k C2, C3, C4, C8, C9, C10, C11 — 0.1 µF Ceramic R8 — Thermistor, 10 k (25°C), 2.5 k (75°C) C5 — 10 µF/100 V Electrolytic R9, R10 — 100 Ohms C6, C7 — 0.1 µF Ceramic, (ATC 200/823 or Equivalent) R11, R12 — 1.0 k D1 — 28 V Zener, 1N5362 or Equivalent R13, R14 — 50–100 Ohms, 4.0 x 2.0 W Carbon in Parallel D3 — 1N4148 T1 — 9:1 Transformer, Trifilar and Balun Wound on Separate IC1 — MC1723 T1 — Fair–Rite Products Corp. Balun Cores #286100012, 5 Turns Each. L1, L2 — Fair–Rite Products Corp. Ferrite Beads T2 — 1:9 Transformer, Balun 50 Ohm CO–AX Cable RG–188, #2673000801 T2 — Low Impedance Lines W.L. Gore 16 Ohms CO–AX Type CXN 1837. R1, R2, R3 — 10 k Trimpot T2 — Each Winding Threaded Through Two Fair–Rite Products Corp. R4 — 1.0 k/1.0 W T2 — #2661540001 Ferrite Sleeves (6 Each). R5 — 10 Ohms XTR — MRF154 R6 — 2.0 k

Figure 9. 20–80 MHz 1.0 kW Broadband Amplifier MRF154 MOTOROLA RF DEVICE DATA

, RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES GATE CHARACTERISTICS The physical structure of a MOSFET results in capacitors The gate of the RF MOSFET is a polysilicon material, and between the terminals. The metal oxide gate structure deter- is electrically isolated from the source by a layer of oxide. mines the capacitors from gate–to–drain (Cgd), and gate–to– The input resistance is very high — on the order of 109 ohms source (Cgs). The PN junction formed during the fabrication — resulting in a leakage current of a few nanoamperes. of the RF MOSFET results in a junction capacitance from Gate control is achieved by applying a positive voltage drain–to–source (Cds). slightly in excess of the gate–to–source threshold voltage, These capacitances are characterized as input (Ciss), out- VGS(th). put (Coss) and reverse transfer (Crss) capacitances on data Gate Voltage Rating — Never exceed the gate voltage sheets. The relationships between the inter–terminal capaci- rating. Exceeding the rated VGS can result in permanent tances and those given on data sheets are shown below. The damage to the oxide layer in the gate region. Ciss can be specified in two ways: Gate Termination — The gates of these devices are es- 1. Drain shorted to source and positive voltage at the gate. sentially capacitors. Circuits that leave the gate open–cir- cuited or floating should be avoided. These conditions can 2. Positive voltage of the drain in respect to source and zero result in turn–on of the devices due to voltage build–up on volts at the gate. In the latter case the numbers are lower. the input capacitor due to leakage currents or pickup. However, neither method represents the actual operat- Gate Protection — These devices do not have an internal ing conditions in RF applications. monolithic zener diode from gate–to–source. If gate protec- tion is required, an external zener diode is recommended.

DRAIN

Cgd MOUNTING OF HIGH POWER RF GATE Ciss = Cgd + Cgs C POWER TRANSISTORSds Coss = Cgd + Cds C = C The package of this device is designed for conductionrss gd cooling. It is extremely important to minimize the thermal re- Cgs SOURCE sistance between the device flange and the heat dissipator. Since the device mounting flange is made of soft copper, it may be deformed during various stages of handling or during LINEARITY AND GAIN CHARACTERISTICS transportation. It is recommended that the user makes a final In addition to the typical IMD and power gain data pres- inspection on this before the device installation. ±0.0005″ is ented, Figure 5 may give the designer additional information considered sufficient for the flange bottom. on the capabilities of this device. The graph represents the The same applies to the heat dissipator in the device small signal unity current gain frequency at a given drain cur- mounting area. If copper heatsink is not used, a copper head rent level. This is equivalent to fT for bipolar transistors. spreader is strongly recommended between the device Since this test is performed at a fast sweep speed, heating of mounting surfaces and the main heatsink. It should be at the device does not occur. Thus, in normal use, the higher least 1/4″ thick and extend at least one inch from the flange temperatures may degrade these characteristics to some ex- edges. A thin layer of thermal compound in all interfaces is, tent. of course, essential. The recommended torque on the 4–40 mounting screws should be in the area of 4–5 lbs.–inch, and DRAIN CHARACTERISTICS spring type lock washers along with flat washers are recom- One figure of merit for a FET is its static resistance in the mended. full–on condition. This on–resistance, VDS(on), occurs in the For die temperature calculations, the ∆ temperature from a linear region of the output characteristic and is specified un- corner mounting screw area to the bottom center of the der specific test conditions for gate–source voltage and drain flange is approximately 5°C and 10°C under normal operat- current. For MOSFETs, VDS(on) has a positive temperature ing conditions (dissipation 150 W and 300 W respectively). coefficient and constitutes an important design consideration The main heat dissipator must be sufficiently large and at high temperatures, because it contributes to the power have low Rθ for moderate air velocity, unless liquid cooling is dissipation within the device. employed. MOTOROLA RF DEVICE DATA MRF154, CIRCUIT CONSIDERATIONS specifications on capacitor ratings should be consulted on At high power levels (500 W and up), the circuit layout be- these aspects prior to design. comes critical due to the low impedance levels and high RF Push–pull circuits are less critical in general, since the currents associated with the output matching. Some of the ground referenced RF loops are practically eliminated, and components, such as capacitors and inductors must also the impedance levels are higher for a given power output. withstand these currents. The component losses are directly High power broadband transformers are also easier to de- proportional to the operating frequency. The manufacturers sign than comparable LC matching networks.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector .Drain Emitter .Source Base .Gate V(BR)CES .V(BR)DSS VCBO .VDGO IC .ID ICES .IDSS IEBO .IGSS VBE(on) .VGS(th) VCE(sat) .VDS(on) Cib .Ciss Cob .Coss hfe .gfs V VDS(on) RCE(sat) = CE(sat) .rDS(on) = I IC D MRF154 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS

–A– NOTES:

U 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 1 2. CONTROLLING DIMENSION: INCH.

K

INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.490 1.510 37.85 38.35 B 0.990 1.010 25.15 25.65 –B– VNC0.330 0.365 8.38 9.273D0.490 0.510 12.45 12.95 E 0.195 0.205 4.95 5.21 H 0.045 0.055 1.14 1.39 J 0.004 0.006 0.10 0.152Q4PL K 0.425 0.500 10.80 12.70 N 0.890 0.910 22.87 23.11 0.25 (0.010) MTAMBMQ0.120 0.130 3.05 3.30

D U 1.250 BSC 31.75 BSC

V 0.750 BSC 19.05 BSC

N H

STYLE 2: PIN 1. DRAIN

C E 2. GATE

–T– J 3. SOURCE

SEATING PLANE CASE 368–03 ISSUE C MOTOROLA RF DEVICE DATA MRF154

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF154 ◊ MOTOROLA RF DEVICMER DFA1T5A4/D

]
15

Similar documents

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this devi
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitt
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MH
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications Motorola Preferred Device such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025–1150 MHz MICROWA
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state trans
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state tran
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF140/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) 150 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficie
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line !
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line ! .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W, to 400 MHz MRF136
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz •
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line .designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line .designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power =
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output
Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D NPN Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector–Emitter Voltage VCEO 300 200 Vdc CASE 29–11, STYLE 1 TO–92 (TO–226AA) Collector–Base Voltage VCBO 300 200 Vdc Emitte
DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test Total Quality Management results are used f
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D  Medium Power Surface Mount Products
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N03HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS Dual HDTMOS devices are an advanced series of power POWER MOSFET MOSFETs which utilize Motorola’s High Cell Density TMOS 30 VOLTS process. These miniature surface
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D  Medium Power Surface Mount Products DUAL TMOS
Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola’s High Cell Density TMOS 20 VOLTS process. These minia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR7- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can withs
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR6- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR30- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 60PT 80PT 100PT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These de
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st