Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 50 V: 150 W, 50 V, 175 MHz Output Power — 150 W N–CHANNEL Gain — 18 dB (22 dB Typ) BROADBAND Efficiency — 40% RF POWER MOSFET • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Th...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 50 V: 150 W, 50 V, 175 MHz Output Power — 150 W N–CHANNEL Gain — 18 dB (22 dB Typ) BROADBAND Efficiency — 40% RF POWER MOSFET • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability D

G

S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C PD 300 Watts Derate above 25°C 1.71 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.6 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF151, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 5.0 7.0 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 350 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 220 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 15 — pF FUNCTIONAL TESTS Common Source Amplifier Power Gain, f = 30; 30.001 MHz Gps 18 22 — dB (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz — 13 — Drain Efficiency η 40 45 — % (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) dB (VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz, IMD(d3) — –32 –30 f2 = 30.001 MHz, IDQ = 250 mA) IMD(d11) — –60 — Load Mismatch ψ (VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, No Degradation in Output Power IDQ = 250 mA, VSWR 30:1 at all Phase Angles) CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS — 23 — dB (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, IMD(d3) — –50 — f2 = 30.001 MHz, IDQ = 3.0 A) IMD(d9–13) — –75 — NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS + +L1 + 50V0– 12 V – C5 C6 C7 C8 L2 C9 C10 – – R1 D.U.T. T2 RF

OUTPUT

RF T1 R3 C2 C4

INPUT

C1 R2 C3 C1 — 470 pF Dipped Mica L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or L2 — Ferrite Bead(s), 2.0 µH Monolythic with Short Leads R1, R2 — 51 Ω/1.0 W Carbon C3 — 200 pF Unencapsulated Mica or Dipped Mica R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel) with Short Leads T1 — 9:1 Broadband Transformer C4 — 15 pF Unencapsulated Mica or Dipped Mica T2 — 1:9 Broadband Transformer with Short Leads Board Material — 0.062″ Fiberglass (G10), C10 — 10 µF/100 V Electrolytic 1 oz. Copper Clad, 2 Sides, r = 5 Figure 1. 30 MHz Test Circuit MRF151 MOTOROLA RF DEVICE DATA, RFC2 +50 V + C10 C11 BIAS R1 L4 0 – 12 V + C4 C5 D.U.T. R3 L3 L2 C9 RF OUTPUT C1 L1 RF INPUT C6 C7 C8 C2 C3 R2 C1, C2, C8 — Arco 463 or equivalent L1 — 3/4″, #18 AWG into Hairpin C3 — 25 pF, Unelco L2 — Printed Line, 0.200″ x 0.500″ C4 — 0.1 µF, Ceramic L3 — 1″, #16 AWG into Hairpin C5 — 1.0 µF, 15 WV Tantalum L4 — 2 Turns, #16 AWG, 5/16 ID C6 — 15 pF, Unelco J101 RFC1 — 5.6 µH, Choke C7 — 25 pF, Unelco J101 RFC2 — VK200–4B C9 — Arco 262 or equivalent R1 — 150 Ω, 1.0 W Carbon C10 — 0.05 µF, Ceramic R2 — 10 kΩ, 1/2 W Carbon C11 — 15 µF, 60 WV Electrolytic R3 — 120 Ω, 1/2 W Carbon D1 — 1N5347 Zener Diode Board Material — 0.062″ Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, εr = 5.0

Figure 2. 175 MHz Test Circuit TYPICAL CHARACTERISTICS

1000 1.04 1.03 C 1.02 1D = 5 A500 iss C 1.01oss14A200 0.99 0.98 100 0.972A0.96 50 0.951A0.94 Crss 0.93 20 0.92 250 mA 0.91 100 mA 0 0.9 0 10 20 30 40 50 – 25 0 25 50 75 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 3. Capacitance versus Figure 4. Gate–Source Voltage versus Drain–Source Voltage Case Temperature MOTOROLA RF DEVICE DATA MRF151

C, CAPACITANCE (pF) VGS , DRAIN-SOURCE VOLTAGE (NORMALIZED),

TYPICAL CHARACTERISTICS

100 2000 VDS = 30 V VDS = 15 V 10 1000 TC = 25°C10220 2000246810 12 14 16 18 20 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 5. DC Safe Operating Area Figure 6. Common Source Unity Gain Frequency

versus Drain Current 30 300 200 VDD = 50 V 100 f = 175 MHz IDQ = 250 mA 2000510 15 20 25 VDD = 50 V

V

10 DD = 50 V 40 V IDQ = 250 mA 100 f = 30 MHz Pout = 150 W IDQ = 250 mA502510 30 100 200012345f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 7. Power Gain versus Frequency Figure 8. Output Power versus Input Power

d3 45 d5 IDQ = 250 mA VDD = 50 V, f = 30 MHz, TONE SEPARATION = 1 kHz d3 45 d5 IDQ = 500 mA 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS PEP)

Figure 9. IMD versus Pout MRF151 MOTOROLA RF DEVICE DATA

GPS, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) IMD, INTERMODULATION DISTORTION Pout, OUTPUT POWER (WATTS) f T, UNITY GAIN FREQUENCY (MHz), 150 f = 175 MHz Zin 15 f = 175 MHz 30 100 7.5 Zo = 10 ΩZOL* 7.5 4 VDD = 50V2IDQ = 250 mA Pout = 150 W ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates ata2ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 10. Series Equivalent Impedance

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES small signal unity current gain frequency at a given drain cur- The physical structure of a MOSFET results in capacitors rent level. This is equivalent to fT for bipolar transistors. between the terminals. The metal anode gate structure de- Since this test is performed at a fast sweep speed, heating of termines the capacitors from gate–to–drain (Cgd), and gate– the device does not occur. Thus, in normal use, the higher to–source (Cgs). The PN junction formed during the temperatures may degrade these characteristics to some ex- fabrication of the MOSFET results in a junction capacitance tent. from drain–to–source (Cds). These capacitances are characterized as input (C ), out- DRAIN CHARACTERISTICSiss put (Coss) and reverse transfer (Crss) capacitances on data One figure of merit for a FET is its static resistance in the sheets. The relationships between the inter–terminal capaci- full–on condition. This on–resistance, VDS(on), occurs in the tances and those given on data sheets are shown below. The linear region of the output characteristic and is specified un- C can be specified in two ways: der specific test conditions for gate–source voltage and drainiss current. For MOSFETs, VDS(on) has a positive temperature 1. Drain shorted to source and positive voltage at the gate. coefficient and constitutes an important design consideration 2. Positive voltage of the drain in respect to source and zero at high temperatures, because it contributes to the power volts at the gate. In the latter case the numbers are lower. dissipation within the device. However, neither method represents the actual operat- GATE CHARACTERISTICS ing conditions in RF applications. The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DRAIN input resistance is very high — on the order of 109 ohms — Cgd resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage GATE Ciss = Cgd = CgsCC= C = C slightly in excess of the gate–to–source threshold voltage,ds oss gd ds Crss = C

V

gd GS(th). Gate Voltage Rating — Never exceed the gate voltage Cgs SOURCE rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gate of this device is essentially LINEARITY AND GAIN CHARACTERISTICS capacitor. Circuits that leave the gate open–circuited or float- In addition to the typical IMD and power gain data pres- ing should be avoided. These conditions can result in turn– ented, Figure 6 may give the designer additional information on of the device due to voltage build–up on the input on the capabilities of this device. The graph represents the capacitor due to leakage currents or pickup. MOTOROLA RF DEVICE DATA MRF151, Gate Protection — This device does not have an internal Motorola Application Note AN211A, FETs in Theory and monolithic zener diode from gate–to–source. If gate protec- Practice, is suggested reading for those not familiar with the tion is required, an external zener diode is recommended. construction and characteristics of FETs. Using a resistor to keep the gate–to–source impedance The major advantages of RF power MOSFETs include low also helps damp transients and serves another important high gain, low noise, simple bias systems, relative immunity function. Voltage transients on the drain can be coupled to from thermal runaway, and the ability to withstand severely the gate through the parasitic gate–drain capacitance. If the mismatched loads without suffering damage. Power output gate–to–source impedance and the rate of voltage change can be varied over a wide range with a low power dc control on the drain are both high, then the signal coupled to the gate signal. may be large enough to exceed the gate–threshold voltage and turn the device on. DC BIAS The MRF151 is an enhancement mode FET and, there- fore, does not conduct when drain voltage is applied. Drain HANDLING CONSIDERATIONS current flows when a positive voltage is applied to the gate. When shipping, the devices should be transported only in RF power FETs require forward bias for optimum perfor- antistatic bags or conductive foam. Upon removal from the mance. The value of quiescent drain current (IDQ) is not criti- packaging, careful handling procedures should be adhered cal for many applications. The MRF151 was characterized at to. Those handling the devices should wear grounding straps IDQ = 250 mA, each side, which is the suggested minimum and devices not in the antistatic packaging should be kept in value of IDQ. For special applications such as linear amplifi- metal tote bins. MOSFETs should be handled by the case cation, IDQ may have to be selected to optimize the critical and not by the leads, and when testing the device, all leads parameters. should make good electrical contact before voltage is ap- The gate is a dc open circuit and draws no current. There- plied. As a final note, when placing the FET into the system it fore, the gate bias circuit may be just a simple resistive divid- is designed for, soldering should be done with a grounded er network. Some applications may require a more elaborate iron. bias sytem. GAIN CONTROL DESIGN CONSIDERATIONS Power output of the MRF151 may be controlled from its The MRF151 is an RF Power, MOS, N–channel enhance- rated value down to zero (negative gain) by varying the dc ment mode field–effect transistor (FET) designed for HF and gate voltage. This feature facilitates the design of manual VHF power amplifier applications. gain control, AGC/ALC and modulation systems. MRF151 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS A U NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 M INCHES MILLIMETERS

Q 4 DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95

RBC0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.5223J0.003 0.007 0.08 0.17

D K 0.435 ––– 11.05 –––M 45 NOM 45 NOM K Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

J U 0.720 0.730 18.29 18.54 C STYLE 2:H E PIN 1. SOURCESEATING 2. GATE

PLANE 3. SOURCE 4. DRAIN

CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF151

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF151 ◊ MOTOROLA RF DEVICMER DFA1T5A1/D

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