Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: 300 W, 50 V, 175 MHz Output Power — 300 W N–CHANNEL Gain — 14 dB (16 dB Typ) BROADBAND Efficiency — 50% RF POWER MOSFET • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: 300 W, 50 V, 175 MHz Output Power — 300 W N–CHANNEL Gain — 14 dB (16 dB Typ) BROADBAND Efficiency — 50% RF POWER MOSFET • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability

D G S

G (FLANGE) CASE 375–04, STYLE 2

D

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 40 Adc Total Device Dissipation @ TC = 25°C PD 500 Watts Derate above 25°C 2.85 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.35 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF151G, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Each Side) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS (Each Side) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 5.0 7.0 — mhos DYNAMIC CHARACTERISTICS (Each Side) Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 350 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 220 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 15 — pF FUNCTIONAL TESTS Common Source Amplifier Power Gain Gps 14 16 — dB (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz) Drain Efficiency η 50 55 — % (VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A) Load Mismatch ψ (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, No Degradation in Output Power VSWR 5:1 at all Phase Angles) R1 + L2 + C4 C5 C9 C10 BIAS 0 – 6 V C11 50 V – – L1 R2 D.U.T. T2 OUTPUT C1 C12T1

INPUT

C6 C2 C3 C7 C8 R1 — 100 Ohms, 1/2 W R2 — 1.0 kOhm, 1/2 W C1 — Arco 424 C2 — Arco 404 C3, C4, C7, C8, C9 — 1000 pF Chip T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms C5, C10 — 0.1 µF Chip T1 — Semirigid Co–Ax, 62–90 Mils O.D. C6 — 330 pF Chip T2 — 1:4 RF Transformer. Can be made of 16–18 Ohms C11 — 0.47 µF Ceramic Chip, Kemet 1215 or T2 — Semirigid Co–Ax, 70–90 Mils O.D. C11 — Equivalent (100 V) Board Material — 0.062″ Fiberglass (G10), C12 — Arco 422 1 oz. Copper Clad, 2 Sides, εr = 5.0 L1 — 10 Turns AWG #18 Enameled Wire, NOTE: For stability, the input transformer T1 must be loaded L1 — Close Wound, 1/4″ I.D. NOTE: with ferrite toroids or beads to increase the common L2 — Ferrite Beads of Suitable Material for NOTE: mode inductance. For operation below 100 MHz. The L2 — 1.5–2.0 µH Total Inductance NOTE: same is required for the output transformer. Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or See Figure 6 for construction details of T1 and T2. Equivalent. Figure 1. 175 MHz Test Circuit MRF151G MOTOROLA RF DEVICE DATA,

TYPICAL CHARACTERISTICS

1000 2000 VDS = 30 V 500 Ciss 200 Coss 100 1000 15 V Crss00010 20 30 40 500246810 12 14 16 18 20 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 2. Capacitance versus Figure 3. Common Source Unity Gain Frequency Drain–Source Voltage* versus Drain Current*

*Data shown applies to each half of MRF151G. 1.04 100 1.03 1.02 ID = 5 A 1.0114A0.99 0.98 TC = 25°C 0.972A10 0.96 0.951A0.94 0.93 0.92 250 mA 0.91 0.9 100 mA 1 – 25 0 25 50 75 100 2 20 200 TC, CASE TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. Gate–Source Voltage versus Figure 5. DC Safe Operating Area Case Temperature*

9:1 CENTER IMPEDANCE HIGH IMPEDANCE TAP RATIO

WINDINGS CENTER TAP CONNECTIONS

TO LOW IMPEDANCE 4:1 WINDINGS

IMPEDANCE RATIO Figure 6. RF Transformer MOTOROLA RF DEVICE DATA MRF151G

VGS , DRAIN-SOURCE VOLTAGE (NORMALIZED) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPS) f T, UNITY GAIN FREQUENCY (MHz),

TYPICAL CHARACTERISTICS

350 30 f = 150 MHz 175 MHz 200 MHz 25 150 15 VDD = 50 V 100 V = 50 V IDD DQ = 2 x 250 mA IDQ = 2 x 250 mA

P

10 out = 150W0505102510 30 100 200 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 7. Output Power versus Input Power Figure 8. Power Gain versus Frequency

f = 175 MHz INPUT, Zin 100 (GATE TO GATE) Zo = 10 Ω 125 150 100 f = 175 MHz 30 OUTPUT, ZOL* (DRAIN TO DRAIN) ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.

Figure 9. Input and Output Impedance MRF151G MOTOROLA RF DEVICE DATA

Pout, OUTPUT POWER (WATTS) GPS, POWER GAIN (dB), RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES cuited or floating should be avoided. These conditions can The physical structure of a MOSFET results in capacitors result in turn–on of the devices due to voltage build–up on between the terminals. The metal anode gate structure de- the input capacitor due to leakage currents or pickup. termines the capacitors from gate–to–drain (Cgd), and gate– Gate Protection — These devices do not have an internal to–source (Cgs). The PN junction formed during the monolithic zener diode from gate–to–source. If gate protec- fabrication of the RF MOSFET results in a junction capaci- tion is required, an external zener diode is recommended. tance from drain–to–source (Cds). Using a resistor to keep the gate–to–source impedance These capacitances are characterized as input (Ciss), out- low also helps damp transients and serves another important put (Coss) and reverse transfer (Crss) capacitances on data function. Voltage transients on the drain can be coupled to sheets. The relationships between the inter–terminal capaci- the gate through the parasitic gate–drain capacitance. If the tances and those given on data sheets are shown below. The gate–to–source impedance and the rate of voltage change Ciss can be specified in two ways: on the drain are both high, then the signal coupled to the gate 1. Drain shorted to source and positive voltage at the gate. may be large enough to exceed the gate–threshold voltage and turn the device on. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. HANDLING CONSIDERATIONS However, neither method represents the actual operat- When shipping, the devices should be transported only in ing conditions in RF applications. antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps

DRAIN

C and devices not in the antistatic packaging should be kept ingd metal tote bins. MOSFETs should be handled by the case GATE Ciss = Cgd = Cgs and not by the leads, and when testing the device, all leads Cds Coss = Cgd = Cds should make good electrical contact before voltage is ap- Crss = Cgd plied. As a final note, when placing the FET into the system it Cgs is designed for, soldering should be done with a grounded

SOURCE

iron. LINEARITY AND GAIN CHARACTERISTICS DESIGN CONSIDERATIONS In addition to the typical IMD and power gain data pres- The MRF151G is an RF Power, MOS, N–channel en- ented, Figure 3 may give the designer additional information hancement mode field–effect transistor (FET) designed for on the capabilities of this device. The graph represents the HF and VHF power amplifier applications. small signal unity current gain frequency at a given drain cur- Motorola Application Note AN211A, FETs in Theory and rent level. This is equivalent to f for bipolar transistors. Practice, is suggested reading for those not familiar with theT Since this test is performed at a fast sweep speed, heating of construction and characteristics of FETs. the device does not occur. Thus, in normal use, the higher The major advantages of RF power MOSFETs include temperatures may degrade these characteristics to some ex- high gain, low noise, simple bias systems, relative immunity tent. from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output DRAIN CHARACTERISTICS can be varied over a wide range with a low power dc control One figure of merit for a FET is its static resistance in the signal. full–on condition. This on–resistance, VDS(on), occurs in the DC BIAS linear region of the output characteristic and is specified un- The MRF151G is an enhancement mode FET and, there- der specific test conditions for gate–source voltage and drain fore, does not conduct when drain voltage is applied. Drain current. For MOSFETs, VDS(on) has a positive temperature current flows when a positive voltage is applied to the gate. coefficient and constitutes an important design consideration RF power FETs require forward bias for optimum perfor- at high temperatures, because it contributes to the power mance. The value of quiescent drain current (IDQ) is not criti- dissipation within the device. cal for many applications. The MRF151G was characterized at IDQ = 250 mA, each side, which is the suggested minimumGATE CHARACTERISTICS value of IDQ. For special applications such as linear amplifi-The gate of the MOSFET is a polysilicon material, and is cation, IDQ may have to be selected to optimize the criticalelectrically isolated from the source by a layer of oxide. The parameters. input resistance is very high — on the order of 109 ohms — The gate is a dc open circuit and draws no current. There- resulting in a leakage current of a few nanoamperes. fore, the gate bias circuit may be just a simple resistive divid- Gate control is achieved by applying a positive voltage er network. Some applications may require a more elaborate slightly in excess of the gate–to–source threshold voltage, bias sytem. VGS(th). Gate Voltage Rating — Never exceed the gate voltage GAIN CONTROL rating. Exceeding the rated VGS can result in permanent Power output of the MRF151G may be controlled from its damage to the oxide layer in the gate region. rated value down to zero (negative gain) by varying the dc Gate Termination — The gates of these devices are es- gate voltage. This feature facilitates the design of manual sentially capacitors. Circuits that leave the gate open–cir- gain control, AGC/ALC and modulation systems. MOTOROLA RF DEVICE DATA MRF151G,

PACKAGE DIMENSIONS U NOTES:Q RADIUS 2 PL 1. DIMENSIONING AND TOLERANCING PER ANSI G Y14.5M, 1982.

0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 1.330 1.350 33.79 34.29B 0.370 0.410 9.40 10.41

5 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96

K34E0.050 0.070 1.27 1.77

G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84

D J 0.004 0.006 0.11 0.15

K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23

J Q 0.060 0.070 1.52 1.78 ENR0.390 0.410 9.91 10.41

U 1.100 BSC 27.94 BSC

H STYLE 2:

–T– SEATING PIN 1. DRAINPLANE 2. DRAIN –A– C 3. GATE 4. GATE 5. SOURCE

CASE 375–04 ISSUE D

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF151G ◊ MOTOROLA RF DEVICMER FD1A5T1GA/D

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