Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (Typ) N–CHANNEL MOS • Superior High Order IMD LINEAR RF POWER FET • IMD(d3) (150 W PEP) — –32 dB (Typ) • IMD(d11) (150 W PEP) — –60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWRDGSCASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Dra...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (Typ) N–CHANNEL MOS • Superior High Order IMD LINEAR RF POWER

FET

• IMD(d3) (150 W PEP) — –32 dB (Typ) • IMD(d11) (150 W PEP) — –60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

D G

S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C PD 300 Watts Derate above 25°C 1.71 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.6 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF150, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 4.0 7.0 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 400 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain f = 30 MHz Gps — 17 — dB (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz — 8.0 — Drain Efficiency η — 45 — % (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) dB (VDD = 50 V, Pout = 150 W (PEP), IMD(d3) — –32 — f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) IMD(d11) — –60 — Load Mismatch ψ (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, No Degradation in Output Power IDQ = 250 mA, VSWR 30:1 at all Phase Angles) CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS — 20 — dB (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, IMD(d3) — –50 — f2 = 30.001 MHz, IDQ = 3.0 A) IMD(d9–13) — –75 — NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 L2 BIAS + + 0 – 12 V – + 50 VC5 C6 C7 C8 C9 C10 – – R1

DUT

T2 RF R3 C2 OUTPUT RF T1 C4 INPUT C1 C3 R2 C1 — 470 pF Dipped Mica C10 — 10 µF/100 V Electrolytic C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH Monolythic with Short Leads L2 — Ferrite Bead(s), 2.0 µH C3 — 200 pF Unencapsulated Mica or Dipped Mica R1, R2 — 51 Ω/1.0 W Carbon with Short Leads R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel C4 — 15 pF Unencapsulated Mica or Dipped Mica T1 — 9:1 Broadband Transformer with Short Leads T2 — 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) MRF150 MOTOROLA RF DEVICE DATA, 25 250 20 VDD = 50 V 50 40 V IDQ = 250 mA VDD = 50V0010 20 30 IDQ = 250 mA 10 Pout = 150 W (PEP) 250 150 VDD = 50 V5 V IDQ = 250 mA002510 20 50 100 2000123456f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

– 30 1000 – 35 150 MHz d3 VDS = 30 V– 40 800 – 45 d5 15 V – 50 600 VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz – 30 400 – 35 30 MHz – 40 200 d3 – 45 d5 – 500020 40 60 80 100 120 140 1600510 15 20 Pout, OUTPUT POWER (WATTS PEP) ID, DRAIN CURRENT (AMPS)

Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency

versus Drain Current 2 VDS = 10 V gfs = 5 mhos0246810 VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 6. Gate Voltage versus Drain Current MOTOROLA RF DEVICE DATA MRF150

IMD, INTERMODULATION DISTORTION (dB) POWER GAIN (dB) IDS, DRAIN CURRENT (AMPS) f T, UNITY GAIN FREQUENCY (MHz) Pout , OUTPUT POWER (WATTS) 30 MHz 150 MHz, 150 f = 175 MHz 90 136 Zin 30 f = 175 MHz 7.5 Zo = 10 Ω7.5 4.0 ZOL* 2.0 VDD = 50 V IDQ = 250 mA

P

4.0 out = 150 W PEP ZOL* = Conjugate of the optimum load impedance 2.0 ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms.

Figure 7. Series Equivalent Impedance

RFC2 + 50 Vdc + C10 C11 L4 BIAS R1 0 – 12 V + C4 C5 DUT C9 R3 RF OUTPUT C1 L3 L2L1 RF INPUT C6 C7 C8 C2 C3 R2 C1, C2, C8 — Arco 463 or equivalent L1 — 3/4″, 18 AWG into Hairpin C3 — 25 pF, Unelco L2 — Printed Line, 0.200″ x 0.500″ C4 — 0.1 µF, Ceramic L3 — 1″, #16 AWG into Hairpin C5 — 1.0 µF, 15 WV Tantalum L4 — 2 Turns #16 AWG, 5/16 ID C6 — 25 pF, Unelco J101 RFC1 — 5.6 µH, Choke C7 — 25 pF, Unelco J101 RFC2 — VK200–4B C9 — Arco 262 or equivalent R1 — 150 Ω, 1.0 W Carbon C10 — 0.05 µF, Ceramic R2 — 10 kΩ, 1/2 W Carbon C11 — 15 µF, 60 WV Electrolytic R3 — 120 Ω, 1/2 W Carbon

Figure 8. 150 MHz Test Circuit (Class AB) MRF150 MOTOROLA RF DEVICE DATA

,

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES Since this test is performed at a fast sweep speed, heating of The physical structure of a MOSFET results in capacitors the device does not occur. Thus, in normal use, the higher between the terminals. The metal oxide gate structure temperatures may degrade these characteristics to some determines the capacitors from gate–to–drain (Cgd), and extent. gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci- DRAIN CHARACTERISTICS tance from drain–to–source (Cds). One figure of merit for a FET is its static resistance in the These capacitances are characterized as input (Ciss), full–on condition. This on–resistance, VDS(on), occurs in theoutput (Coss) and reverse transfer (Crss) capacitances on data linear region of the output characteristic and is specified under sheets. The relationships between the inter–terminal capaci- specific test conditions for gate–source voltage and drain tances and those given on data sheets are shown below. The current. For MOSFETs, VDS(on) has a positive temperatureCiss can be specified in two ways: coefficient and constitutes an important design consideration 1. Drain shorted to source and positive voltage at the gate. at high temperatures, because it contributes to the power 2. Positive voltage of the drain in respect to source and zero dissipation within the device. volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operat- GATE CHARACTERISTICS ing conditions in RF applications. The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — DRAIN resulting in a leakage current of a few nanoamperes. Cgd Gate control is achieved by applying a positive voltage GATE Ciss = Cgd + Cgs slightly in excess of the gate–to–source threshold voltage, Cds Coss = Cgd + Cds VGS(th). Crss = Cgd Gate Voltage Rating — Never exceed the gate voltage Cgs rating. Exceeding the rated VGS can result in permanent SOURCE damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–cir- LINEARITY AND GAIN CHARACTERISTICS cuited or floating should be avoided. These conditions can In addition to the typical IMD and power gain data result in turn–on of the devices due to voltage build–up on the presented, Figure 5 may give the designer additional informa- input capacitor due to leakage currents or pickup. tion on the capabilities of this device. The graph represents the Gate Protection — These devices do not have an internal small signal unity current gain frequency at a given drain monolithic zener diode from gate–to–source. If gate protection current level. This is equivalent to fT for bipolar transistors. is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector .Drain Emitter .Source Base .Gate V(BR)CES .V(BR)DSS VCBO .VDGO IC .ID ICES .IDSS IEBO .IGSS VBE(on) .VGS(th) VCE(sat) .VDS(on) Cib .Ciss Cob .Coss hfe .gfsVVRCE(sat)CE(sat) = .r = DS(on) DS(on) IC ID MOTOROLA RF DEVICE DATA MRF150,

PACKAGE DIMENSIONS A U NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 M INCHES MILLIMETERS

Q 4 DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95

RBC0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.5223J0.003 0.007 0.08 0.17

D K 0.435 ––– 11.05 –––M 45 NOM 45 NOM K Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

J U 0.720 0.730 18.29 18.54

STYLE 2:

H C PIN 1. SOURCEE SEATING 2. GATE

PLANE 3. SOURCE 4. DRAIN

CASE 211–11 ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF150 ◊ MOTOROLA RF DEVICMER DFA1T5A0/D

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