Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics 90 W, 1.5 GHz RF POWER TRANSISTOR Output Power — 90 Watts (PEP) NPN SILICON Gain — 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency — 30% Min @ 90 Watts (PEP) Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP) • Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz...
Author: Florian Hartmann Shared: 8/19/19
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D The RF Line

Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics 90 W, 1.5 GHz RF POWER TRANSISTOR Output Power — 90 Watts (PEP) NPN SILICON Gain — 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency — 30% Min @ 90 Watts (PEP) Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP) • Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 5 Adc • Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz • Characterized with Small–Signal S–Parameters from 1000–2000 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting CASE 375A–01, STYLE 1 RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous @ TJ(max) = 150°C IC 15 Adc Total Device Dissipation @ TC = 25°C PD 250 Watts Derate above 25°C 1.43 W/°C Storage Temperature Range Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.70 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 25 28 — Vdc (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CES 60 65 — Vdc (IC = 50 mAdc, VBE = 0) Collector–Emitter Breakdown Voltage V(BR)CER 30 — — Vdc (IC = 50 mAdc, RBE = 100 Ω) (continued) This document contains information on a new product. Specifications and information herein are subject to change without notice. M MOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF15090, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS — continued Emitter–Base Breakdown Voltage V(BR)EBO 4 4.8 — Vdc (IE = 5 mAdc, IC = 0) Collector Cutoff Current ICES — — 10 mAdc (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain hFE 20 40 80 — (ICE = 1 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob — 52 — pF (VCB = 26 Vdc, IE = 0, f = 1 MHz) – For Information Only. This Part Is Collector Matched. FUNCTIONAL TESTS (Figure 12) Common–Emitter Amplifier Power Gain Gpe 7.5 8.3 — dB (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Collector Efficiency η 30 36 — % (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Intermodulation Distortion IMD — – 32 – 28 dBc (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Input Return Loss IRL 12 15 — dB (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Load Mismatch ψ (VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, No Degradation in Output Power f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) MRF15090 MOTOROLA RF DEVICE DATA,

TYPICAL CHARACTERISTICS

120 9.0 100 Pin = 15 W Gpe P 80out 80 8.5 10 W 405W40 8.0 VCC = 26 Vdc VCC = 26 Vdc I 2020 CQ = 250 mA ICQ = 250 mA f = 1490 MHz Single Tone Single Tone 0 7.5004812 16 20 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 1. Output Power & Power Gain Figure 2. Output Power versus Frequency

versus Input Power – 20 10 50 3rd Order G8 pe 40 – 30 5th η6 30 3.0 – 40 5 2.5 7th 4 Pout = 90 W (PEP) 20 VCC = 26 Vdc 2.0 – 50 VCC = 26 Vdc 3 ICQ = 250 mA ICQ = 250 mA 2 10 f1 = 1490 MHz VSWR 1.5 f2 = 1490.1 MHz – 60001.0 0 20 40 60 80 100 120 1400 1420 1440 1460 1480 1500 1520 1540 1560 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz)

Figure 3. Intermodulation Distortion Figure 4. Performance in Broadband Circuit

versus Output Power – 20 10 ICQ = 750 mA– 25 9 ICQ = 100 mA – 30 8 250 mA 500 mA – 35 7 – 40 6 500 mA 250 mA – 45 5 VCC = 26 Vdc VCC = 26 Vdc – 50 f1 = 1490 MHz 4 f1 = 1490 MHz f2 = 1490.1 MHz f2 = 1490.1 MHz – 55 750 mA 3 100 mA – 60 2 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion Figure 6. Power Gain versus Output Power

versus Output Power

MOTOROLA RF DEVICE DATA MRF15090

IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (WATTS) Gpe, GAIN (dB) Gpe, POWER GAIN (dB) Gpe, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) η , COLLECTOR EFFICIENCY (%) INPUT VSWR,

TYPICAL CHARACTERISTICS

60 9 –10 8.5 –15 40 Gpe Fundamental 8 – 20 10 7.5 – 25 3rd Order 0 IMD VCC = 24 Vdc 7 – 30–10 IC = 5.0 Adc – 20 f1 = 1490 MHz ICQ = 250 mA f = 1490.1 MHz 6.5 f1 = 1490 MHz – 35 – 30 2 f2 = 1490.1 MHz – 40 6 – 40 10 15 20 25 30 35 40 45 50 18 20 22 24 26 28 Pin, INPUT POWER (dBm) VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)

Figure 7. Class A Third Order Intercept Point Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage

10 109 MTBF Limited 108 Tflange = 75°C Tflange = 100°C 107 TJ = 175°C 0 10504812 16 20 24 28 100 120 140 160 180 200 220 240 260 VCE, COLLECTOR VOLTAGE (Vdc) TJ, JUNCTION TEMPERATURE (°C)

Figure 9. DC Safe Operating Area Figure 10. MTBF Factor versus Junction Temperature

The graph above displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application.

MRF15090 MOTOROLA RF DEVICE DATA

I C , COLLECTOR CURRENT (Adc) Pout , OUTPUT POWER (dBm) Breakdown Limited MTBF FACTOR (HOURS x AMPS2 ) Gpe, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc), 1.45 f = 1.4 GHz 1.5 1.55 Zin 1.6 1.6 1.55 ZOL* 1.5 1.45 Zo = 10Ωf= 1.4 GHz f Zin ZOL* (MHz) (Ω) (Ω) Zin = Input impedance is a balanced base to 1400 3.28 + j9.07 4.62 + j2.23 base measurement. 1450 3.85 + j10.4 4.35 + j3.41 ZOL* = Conjugate of optimum load impedance collector to collector into which the device 1500 4.55 + j11.4 4.08 + j3.60 operates at a given output power, bias 1550 5.45 + j11.9 3.80 + j3.78 current, voltage and frequency. 1600 6.20 + j12.2 3.55 + j3.84 Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP), VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz Table 1. Common Emitter S–Parameters (for One Side of Push–Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc f S11 S21 S12 S22 MHz |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 1000 0.999 172 0.164 108 0.006 72 0.957 173 1050 0.999 171 0.179 103 0.007 69 0.956 172 1100 0.994 170 0.196 97 0.007 66 0.948 172 1150 0.992 170 0.216 92 0.008 63 0.940 171 1200 0.994 169 0.241 86 0.008 62 0.935 171 1250 0.986 168 0.269 80 0.009 57 0.924 170 1300 0.982 167 0.306 73 0.010 51 0.915 170 1350 0.973 166 0.351 66 0.011 45 0.905 170 1400 0.957 164 0.408 56 0.012 33 0.888 170 1450 0.938 163 0.483 44 0.013 22 0.876 170 1500 0.903 162 0.571 29 0.014 7 0.859 171 1550 0.857 163 0.651 10 0.014 –13 0.855 173 1600 0.821 165 0.673 –14 0.013 – 40 0.877 174 1650 0.837 169 0.623 – 37 0.011 – 67 0.902 174 1700 0.872 170 0.529 – 56 0.009 –104 0.922 173 1750 0.901 170 0.437 –70 0.008 –138 0.931 172 1800 0.920 170 0.363 – 81 0.007 –165 0.932 171 1850 0.940 169 0.309 – 90 0.008 173 0.930 170 1900 0.954 169 0.265 – 98 0.008 150 0.932 169 1950 0.965 168 0.232 –104 0.009 139 0.930 169 2000 0.971 167 0.205 –110 0.010 132 0.929 168 MOTOROLA RF DEVICE DATA MRF15090,

VCC

R4 Vbias Q3+ Q1 R3 C9 R6 D1 Q2 D2 Vb C16 C18 R7 C20 Coax 1 + Balun 2 C7 R1 C10 C13C5 R5 L6 B1 + B3 C22 TL2 TL8 L2 L4 L8 C23 RF Output RF Input C3 TL4 TL6 TL10 N2 N1 TL1 C4 C12 C15 C24 C26 L10 C1 L1 C2 TL5 TL7 DUT TL9 L3 L5 L9TL3 + B4 B2 C25 Balun 1 C6 C8 R2 C11 C14 L7 + C17 C19 R8 Coax 2 Vb

VCC

B1, B2, B3, B4 Ferrite Bead, Ferroxcube L1 1 Turn, 24 AWG, 0.042″ ID Choke C1 2.7 pF, B Case Chip Capacitor, ATC L2, L3, L8, L9 3 Turn, 20 AWG, 0.126″ ID Choke C2 0.6–4.0 pF, Variable Capacitor, Johanson L4, L5, L6, L7 12 Turns, 22 AWG, 0.140″ ID Choke C3, C4, C23, C24 18 pF, B Case Chip Capacitor, ATC L10 3 Turns, 24 AWG, 0.046″ ID Choke C5, C6, C22, C25 51 pF, Chip Capacitor, Murata Erie N1, N2 Type N Flange Mount RF Connector, Omni Spectra C7, C8, C20, C21 1800 pF, Chip Capacitor, Kemit Q1, Q3 Transistor, NPN, Motorola (MJD47) C9, C10, C11 100 µF, Electrolytic Capacitor, Mallory Q2 Transistor PNP Motorola (BD136) C12 5.1 pF, A Case Chip Capacitor, ATC R1, R2, R7, R8 10 Ω, 1/2 W, Resistor C13, C14, C18, C19 0.1 µF, Chip Capacitor, Kemit R3 150 Ω, 1/2 W, Resistor C15 1.1 pF, B Case Chip Capacitor, ATC R42x66 Ω, 1/8 W, Chip Resistors in Parallel, Rohm C16, C17 470 µF, Electrolytic Capacitor, Mallory R5 93 Ω, 1/8 W, Chip Resistor, Rohm C26 0.3 pF, B Case Chip Capacitor, ATC R6 22 KΩ, 1/8 W, Chip Resistor, Rohm D1 Diode, Motorola (MUR5120T3) TL1 to TL10 See Photomaster D2 Light Emitting Diode, Industrial Devices Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55

Figure 12. Class AB Test Fixture Electrical Schematic MRF15090 MOTOROLA RF DEVICE DATA

, Vsupply + R1 Q1 R9 C1 VCC R2 Q3 R17 R10 R19R15 + R3 R7 +R11 C3 C5 B1 C11 C15 C17 B5 C19 B3 B7 Coax 1 Balun 2 C9 C20 TL2 L2 L4 TL8 C21 RF Output RF Input C7 TL4 TL6 TL10 N2 N1 TL1 C13 C14 C25 L6 L1 C8 TL5 TL7 C22

DUT

L5 TL9L3

TL

3 C23 C10 Balun 1 B4 B8 Coax 2 R1 C4 + C16C6 + C18 B6 C24 R4 R8 C122 B2 R13 R16 R18 R20Q4 Q2 R5 VCC R6 R14 +C2 Vsupply B1, B2, B5, B6 Long Bead, Fair Rite N1, N2 Type N Flange Mount RF Connector, Omni Spectra B3, B4, B7, B8 Short Bead, Fair Rite Q1, Q2 Transistor NPN Motorola (BD135) C1, C2, C3, C4 100 µF, Electrolytic Capacitor, Mallory Q3, Q4 Transistor PNP Motorola (BD136) C5, C6, C17, C18 0.1 µF, Chip Capacitor, Kemit R1, R6 250 Ω, 1/8 W, Chip Resistor, Rohm C7, C8, C21, C22 18 pF, B Case Chip Capacitor, ATC R2, R5 500 Ω, 1/4 W, Potentiometer, State of the Art C9, C10, C20, C23 51 pF, Chip Capacitor, Murata Erie R3, R4 4.7 Ω, 1/8 W, Chip Resistor, Rohm C11, C12, C19, C24 1800 pF, Chip Capacitor, Kemit R7, R82x4.7 KΩ, 1/8 W, Chip Resistors C13 4.3 pF, B Case Chip Capacitor, ATC in Parallel, Rohm C14 2.0 pF, B Case Chip Capacitor, ATC R9, R14 1.0 Ω, 10 W, Resistor, Dale C15, C16 470 µF, Electrolytic Capacitor, Mallory R10, R13 38 Ω, 1 W, Resistor C25 0.6–4 pF Variable Capacitor, Johanson R11, R12 75 Ω, 1/8 W, Chip Resistor, Rohm L1 3 Turns, 24 AWG, 0.046″ ID Choke R15, R162x10 Ω, 1/8 W, Chip Resistors in Parallel, Rohm L2, L3, L4, L5 3 Turns, 20 AWG, 0.126″ ID Choke R17, R18, R19, R204x38 Ω, 1/8 W, Chip Resistors in Parallel, Rohm L6 2 Turns, 24 AWG, 0.042″ ID Choke Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55

Figure 13. Class A Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15090

,

PACKAGE DIMENSIONS Q 2 PL G 0.25 (0.010) MTBM L NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI12Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

K R –B– DIM MIN MAX MIN MAX

5 A 1.330 1.350 33.79 34.29 B 0.375 0.395 9.52 10.0334C0.180 0.205 4.57 5.21 D 0.320 0.340 8.13 8.64

D E 0.060 0.070 1.52 1.77

F 0.004 0.006 0.11 0.15 G 1.100 BSC 27.94 BSC H 0.082 0.097 2.08 2.46

ENFSTYLE 1: K 0.580 0.620 14.73 15.75PIN 1. COLLECTOR L 0.435 BSC 11.05 BSC

2. COLLECTOR 3. BASE N 0.845 0.875 21.46 22.23 4. BASE Q 0.118 0.130 3.00 3.30H 5. EMITTER R 0.390 0.410 9.91 10.41 –T– SEATINGPLANE

A C CASE 375A–01 ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF15090 ◊ MOTOROLA RF DEVIMCREF D15A0T9A0/D

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GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR25- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope suitable for surface PBYR2- 35CT 40CT 45CT mounting, featuring low forward VRRM Repetitive peak reverse 35 40 45 V voltage drop and absen
DISCRETE SEMICONDUCTORS DATA SHEET PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING MARKING • Low switching losses PIN DESCRIPTION MARKING TYPE NUMBE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR20- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st