Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for large–signal, common source LATERAL N–CHANNEL amplifier applications in 7.5 volt portable FM equipment. BROADBAND • Specified Performance @ 520 MHz, 7.5 Volts RF POWER MOSFET Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65% • Characterized with Series Equivalent Large...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for large–signal, common source LATERAL N–CHANNEL amplifier applications in 7.5 volt portable FM equipment. BROADBAND • Specified Performance @ 520 MHz, 7.5 Volts RF POWER MOSFET Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • Excellent Thermal Stability • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request CASE 466–02, STYLE 1 • RF Power Plastic Surface Mount Package G (PLD 1.5) • Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage (1) VDSS 25 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 4 Adc Total Device Dissipation @ TC = 25°C PD 62.5 Watts Derate above 25°C 0.50 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature Tj 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W (1) Not designed for 12.5 volt applications. NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MoOtorToOla,R InOc.L 1A99 R8 F DEVICE DATA MRF1507 MRF1507T1, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS — — 1 µAdc (VDS = 25 Vdc, VGS = 0) Gate–Source Leakage Current IGSS — — 1 µAdc (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2.5 3.4 — Vdc (VDS = 10 Vdc, ID = 100 µAdc) Drain–Source On–Voltage VDS(on) 0.3 0.44 — Vdc (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance gfs 1.30 1.80 — S (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 48 — pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance Coss — 40.5 — pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance Crss — 5.2 — pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Source Amplifier Power Gain Gps 10 11 — dB (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Drain Efficiency η 50 65 — % (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Pout Pout 8 9.9 — W (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) MRF1507 MRF1507T1 MOTOROLA RF DEVICE DATA, R2 B1 VGG V + + DD C1 C2 R1 C4 C5 R3 C3 C6 L1 Z7 Z8 Z9 Z10 Z11 N2 RF N1 R4 DUT OUTPUTC14 RF Z1 Z2 Z3 Z4 Z5 Z6 INPUT C12 C13 C8 C10 C7 C9 C11 B1 Fair Rite Products Long Ferrite Bead R4 20 Ω, 1/4 W Carbon C1, C5 0.1 µF, 100 mil Chip Capacitor Z1 0.459″ x 0.083″ Microstrip C2, C4 10 µF, 50 V Electrolytic Capacitor Z2 0.135″ x 0.083″ Microstrip C3, C6, C8, C14 130 pF, 100 mil Chip Capacitor Z3 1.104″ x 0.083″ Microstrip C7, C9, C13 0.3–20 pF Trimmer Capacitor Z4 0.114″ x 0.083″ Microstrip C10 82 pF, 100 mil Chip Capacitor Z5 0.154″ x 0.083″ Microstrip C11 39 pF, 100 mil Chip Capacitor Z6 0.259″ x 0.213″ Microstrip C12 32 pF, 100 mil Chip Capacitor Z7 0.217″ x 0.213″ Microstrip L1 4 Turns, #20 AWG Enamel, 0.1″ ID Z8 0.175″ x 0.083″ Microstrip N1, N2 Type N Connectors Z9 0.747″ x 0.083″ Microstrip R1 1.1 MΩ, 1/4 W Carbon Z10 0.608″ x 0.083″ Microstrip R2 2 kΩ, 1/2 W Carbon Z11 0.594″ x 0.083″ Microstrip R3 100 Ω, 1/4 W Carbon Board Glass Teflon, 31 mils

Figure 1. 500 – 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS

11 12 10 440 MHz 11 IDQ = 200 mA 10 700 mW 470 MHz7968500 mW 5 400 MHz73VDD = 7.5V2IDQ = 200 mA 5 Pin = 300 mW140.10 0.30 0.50 0.71 0.90 1.10 1.31 1.51678910 Pin, INPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (V)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage @ 400 MHz MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1

Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS),

TYPICAL CHARACTERISTICS

13 13 12 IDQ = 200 mA 12 IDQ = 200 mA 11 700 mW700 mW 11 10 10 500 mW 500 mW998877Pin = 300 mW Pin = 300 mW665544678910678910 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V)

Figure 4. Output Power versus Figure 5. Output Power versus Supply Voltage @ 470 MHz Supply Voltage @ 440 MHz

9 20 80 8.5 16 70 DRAIN EFFICIENCY8f= 470 MHz f = 440 MHz 12 60 7.5 f = 400 MHz GAIN 8 50 7 Pout f = 520 MHz 6.5 IDQ = 150 mA VCC = 7.5VP= 0.7 W Pin = 0.6 W in6030 0 50 100 150 200 250 300 350 400 450 50045678910 IDQ, GATE CURRENT (mA) VDD, DRAIN VOLTAGE (V)

Figure 6. Output Power versus Gate Current Figure 7. Gain, Pout, Efficiency

versus Drain Voltage 12 15 70

GAIN

GAIN 60 DRAIN EFFICIENCY 50 Pout 5 Poutt f = 520 MHz f = 520 MHz 30 VDD = 7.5 V VDD = 7.5 V Pin = 0.7 W IDQ = 150 mA8020 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 15 17 19 21 23 25 27 29 IDQ (A) INPUT POWER (dBm)

Figure 8. Pout versus IDQ Figure 9. Pout, Gain, Drain Efficiency versus Pin MRF1507 MRF1507T1 MOTOROLA RF DEVICE DATA

Gp (dB),Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) GAIN (dB), Pout (WATTS) GAIN (dB), Pout (WATTS) Pout , OUTPUT POWER (WATTS) DRAIN EFFICIENCY (%) DRAIN EFFICIENCY (%),

TYPICAL CHARACTERISTICS

12 12 f = 500 MHz 700 mW 10 700 mW 10 VDD = 7.5 V 500 mW 8 500 mW866Pin = 250 mW Pin = 250 mW4422f= 500 MHz VDD = 7.5V0045678910 0 100 200 300 400 500 600 700 800 900 1000 VDS, DRAIN VOLTAGE (V) IDQ, (mA)

Figure 10. Pout versus Drain Voltage Figure 11. Pout versus IDQ

12 12 10 f = 520 MHz 700 mW 10 700 mW VDD = 7.5 V 500 mW 8 500 mW866Pin = 250 mW 4 Pin = 250 mW422f= 520 MHz VDD = 7.5V0045678910 0 100 200 300 400 500 600 700 800 900 1000 VDS, DRAIN VOLTAGE (V) IDQ, (mA)

Figure 12. Pout versus Drain Voltage Figure 13. Pout versus IDQ

12 17 VDD = 9 V VDD = 9 V11 15 9 VDD = 7.5 VVDD = 7.5V6f= 135 MHz7f= 155 MHzII= 800 mADQ = 800 mA DQ5520 21 22 23 24 25 20 21 22 23 24 25 Pin, (dBm) Pin, (dBm)

Figure 14. Pout versus Pin Figure 15. Pout versus Pin MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1

Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS),

TYPICAL CHARACTERISTICS

17 4 15 VDS = 10 V VDD = 9 V 11 VDD = 7.5V2TYPICAL DEVICE SHOWN7f= 175 MHz IDQ = 800 mA5020 21 22 23 24 250123456Pin, (dBm) VGS, GATE–SOURCE VOLTAGE (V)

Figure 16. Pout versus Pin Figure 17. Drain Current versus Gate Voltage

(Typical Device Shown) 80 5 VGS = 0Vf= 1 MHz Ciss 3 TC = 25°C Coss 2

C

0 rss00510 15 20 0 10 100 VDS, DRAIN–SOURCE VOLTAGE (V) VDS, DRAIN–SOURCE VOLTAGE (V)

Figure 18. Capacitance versus Voltage Figure 19. Maximum Rated Forward Biased Safe Operating Area MRF1507 MRF1507T1 MOTOROLA RF DEVICE DATA

C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) ID , DRAIN CURRENT (AMPS) ID , DRAIN CURRENT (AMPS), f = 400 MHz 520 175 Z = 10ΩZoOL* ZOL* f = 135 MHz f = 400 MHz 520 Zin Zin f = 135 MHz VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W VDD = 7.5 V, IDQ = 800 mA, Pout = 8WfZin ZOL* f Zin ZOL* MHzΩΩMHzΩΩ400 3.6 – j3.1 2.5 – j0.5 135 6.2 – j15.1 2.3 – j1.8 440 4.0 – j3.7 2.7 – j0.6 155 8.29 – j16.9 2.5 – j0.8 470 3.1 – j4.4 2.5 – j1.2 175 5.33 – j17.0 2.6 – j0.6 500 2.0 – j2.71 2.05 – j0.65 520 1.9 – j3.5 2.1 – j0.4 Zin = Conjugate of source impedance with parallel Zin = Conjugate of source impedance with parallel 20 Ω resistor and 82 pF capacitor in series 10 Ω resistor and 1000 pF capacitor in series with gate. with gate. ZOL* = Conjugate of the load impedance at given ZOL* = Conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. output power, voltage, frequency, and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.

MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1

, Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc) ID = 150 mA f S11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.76 –138 15.18 100 0.04 12 0.71 –141 100 0.77 –155 7.68 84 0.04 –3 0.72 –156 200 0.81 –162 3.53 65 0.03 –18 0.78 –162 300 0.85 –165 2.08 53 0.03 –27 0.83 –164 400 0.89 –167 1.37 44 0.03 –33 0.87 –166 500 0.91 –169 0.96 37 0.02 –36 0.90 –168 700 0.95 –171 0.54 27 0.01 –35 0.94 –170 850 0.96 –173 0.38 22 0.01 –30 0.95 –172 1000 0.97 –174 0.29 19 0.01 –19 0.96 –173 1200 0.98 –175 0.20 16 0.01 3 0.97 –174 ID = 800 mA f S11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.82 –152 16.58 98 0.03 9 0.79 –161 100 0.81 –165 8.37 88 0.03 1 0.80 –169 200 0.82 –170 4.08 76 0.02 –8 0.81 –172 300 0.84 –172 2.60 68 0.02 –13 0.83 –173 400 0.85 –172 1.84 61 0.02 –17 0.84 –173 500 0.87 –172 1.38 54 0.02 –20 0.86 –173 700 0.90 –173 0.86 44 0.02 –21 0.89 –174 850 0.91 –174 0.64 38 0.01 –19 0.90 –174 1000 0.92 –175 0.49 33 0.01 –12 0.92 –175 1200 0.94 –176 0.36 29 0.01 2 0.93 –176 ID = 1.5AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.83 –156 16.45 97 0.02 9 0.80 –164 100 0.83 –167 8.29 88 0.02 1 0.81 –171 200 0.83 –172 4.06 77 0.02 –6 0.82 –174 300 0.84 –173 2.61 70 0.02 –10 0.83 –174 400 0.86 –173 1.86 63 0.02 –13 0.85 –174 500 0.87 –174 1.41 57 0.02 –15 0.86 –174 700 0.89 –174 0.89 47 0.01 –16 0.88 –175 850 0.91 –175 0.67 41 0.01 –13 0.90 –175 1000 0.92 –175 0.52 36 0.01 –6 0.91 –175 1200 0.93 –176 0.38 31 0.01 8 0.92 –176 MRF1507 MRF1507T1 MOTOROLA RF DEVICE DATA, APPLICATIONS INFORMATION DESIGN CONSIDERATIONS The MRF1507 is a common–source, RF power, N–Channel the linear region of the output characteristic and is specified enhancement mode, Lateral Metal–Oxide Semiconductor at a specific gate–source voltage and drain current. The Field–Effect Transistor (MOSFET). Motorola Application Note drain–source voltage under these conditions is termed AN211A, “FETs in Theory and Practice”, is suggested reading VDS(on). For MOSFETs, VDS(on) has a positive temperature for those not familiar with the construction and characteristics coefficient at high temperatures because it contributes to the of FETs. power dissipation within the device. This surface mount packaged device was designed primari- BVDSS values for this device are higher than normally ly for VHF and UHF portable power amplifier applications. required for typical applications. Measurement of BVDSS is not Manufacturability is improved by utilizing the tape and reel recommended and may result in possible damage to the capability for fully automated pick and placement of parts. device. However, care should be taken in the design process to insure GATE CHARACTERISTICS proper heat sinking of the device. The gate of the RF MOSFET is a polysilicon material, and The major advantages of Lateral RF power MOSFETs is electrically isolated from the source by a layer of oxide. The include high gain, simple bias systems, relative immunity from DC input resistance is very high – on the order of 109 Ω — thermal runaway, and the ability to withstand severely resulting in a leakage current of a few nanoamperes. mismatched loads without suffering damage. Gate control is achieved by applying a positive voltage to MOSFET CAPACITANCES the gate greater than the gate–to–source threshold voltage, The physical structure of a MOSFET results in capacitors VGS(th). between all three terminals. The metal oxide gate structure Gate Voltage Rating — Never exceed the gate voltage determines the capacitors from gate–to–drain (Cgd), and rating. Exceeding the rated VGS can result in permanent gate–to–source (Cgs). The PN junction formed during fabrica- damage to the oxide layer in the gate region. tion of the RF MOSFET results in a junction capacitance from Gate Termination — The gates of these devices are drain–to–source (Cds). These capacitances are characterized essentially capacitors. Circuits that leave the gate open–cir- as input (Ciss), output (Coss) and reverse transfer (Crss) cuited or floating should be avoided. These conditions can capacitances on data sheets. The relationships between the result in turn–on of the devices due to voltage build–up on the inter–terminal capacitances and those given on data sheets input capacitor due to leakage currents or pickup. are shown below. The Ciss can be specified in two ways: Gate Protection — These devices do not have an internal 1. Drain shorted to source and positive voltage at the gate. monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. Using 2. Positive voltage of the drain in respect to source and a resistor to keep the gate–to–source impedance low also zero volts at the gate. helps dampen transients and serves another important In the latter case, the numbers are lower. However, neither function. Voltage transients on the drain can be coupled to the method represents the actual operating conditions in RF gate through the parasitic gate–drain capacitance. If the applications. gate–to–source impedance and the rate of voltage change on DRAIN CHARACTERISTICS the drain are both high, then the signal coupled to the gate may One critical figure of merit for a FET is its static resistance be large enough to exceed the gate–threshold voltage and in the full–on condition. This on–resistance, RDS(on), occurs in turn the device on. MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1, DC BIAS Since the MRF1507 is an enhancement mode FET, drain of the thermal design should be to minimize the temperature current flows only when the gate is at a higher potential than at the back side of the package. the source. RF power FETs operate optimally with a quiescent AMPLIFIER DESIGN drain current (IDQ), whose value is application dependent. The Impedance matching networks similar to those used with MRF1507 was characterized at IDQ = 150 mA, which is the bipolar transistors are suitable for the MRF1507. For exam- suggested value of bias current for typical applications. For ples see Motorola Application Note AN721, “Impedance special applications such as linear amplification, IDQ may have Matching Networks Applied to RF Power Transistors.” Large– to be selected to optimize the critical parameters. signal impedances are provided, and will yield a good first The gate is a dc open circuit and draws no current. pass approximation. Therefore, the gate bias circuit may generally be just a simple Since RF power MOSFETs are triode devices, they are not resistive divider network. Some special applications may unilateral. This coupled with the very high gain of the require a more elaborate bias system. MRF1507 yields a device capable of self oscillation. Stability GAIN CONTROL may be achieved by techniques such as drain loading, input Power output of the MRF1507 may be controlled to some shunt resistive loading, or output to input feedback. The RF degree with a low power dc control signal applied to the gate, test fixture implements a parallel resistor and capacitor in thus facilitating applications such as manual gain control, series with the gate, and has a load line selected for a higher ALC/AGC and modulation systems. This characteristic is very efficiency, lower gain, and more stable operating region. dependent on frequency and load line. Two–port stability analys is wi th the MRF1507 MOUNTING S–parameters provides a useful tool for selection of loading or The specified maximum thermal resistance of 2°C/W feedback circuitry to assure stable operation. See Motorola assumes a majority of the 0.065″ x 0.180″ source contact on Application Note AN215A, “RF Small–Signal Design Using the back side of the package is in good contact with an Two–Port Parameters” for a discussion of two port network appropriate heat sink. As with all RF power devices, the goal theory and stability. MRF1507 MRF1507T1 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS L C NOTES: R P 10 DRAFT U 1. DIMENSIONING AND TOLERANCING PER ANSI

2 Y14.5M, 1982.

ZONEXÉÉÉÉ 2. CONTROLLING DIMENSION: INCH3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,

ÉÉÉÉ S AND X. ÉÉÉÉ ZONE V INCHES MILLIMETERS

AF34NKHDIM MIN MAX MIN MAX

ÉÉÉÉ A 0.255 0.265 6.48 6.73B 0.225 0.235 5.72 5.97 ÉÉÉÉ C 0.065 0.072 1.65 1.83D 0.130 0.150 3.30 3.81

G ZONEWE0.021 0.026 0.53 0.66

1 ÉÉÉÉ F 0.026 0.044 0.66 1.12 G 0.050 0.070 1.27 1.78

DJH0.045 0.063 1.14 1.60E J 0.160 0.180 4.06 4.57 B ÉÉÉ K 0.273 0.285 6.93 7.24 Q 0.89 (0.035) X 45 5 RESIN BLEED/FLASH ALLOWABLE L 0.245 0.255 6.22 6.48

ÉÉÉ N 0.230 0.240 5.84 6.10 P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 STYLE 1: R 0.200 0.210 5.08 5.33 PIN 1. DRAIN S 0.006 0.012 0.15 0.31 2. GATE U 0.006 0.012 0.15 0.31 3. SOURCE ZONE V 0.000 0.021 0.00 0.53 4. SOURCE ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25

CASE 466–02 ISSUE B

(PLD 1.5)

MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/

MRF1507 MRF1507T1 ◊ MOTOROLA RF DEVICEM DRAFT1A507/D

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