Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier 60 W, 1.49 GHz base station equipment. RF POWER BIPOLAR • Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts TRANSISTORS Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% • Characterize...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub–Micron Bipolar Line

Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier 60 W, 1.49 GHz base station equipment. RF POWER

BIPOLAR

• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts TRANSISTORS Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power CASE 451–04, STYLE 1 (MRF15060) CASE 451A–01, STYLE 1 (MF15060S) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 60 Adc Collector Current – Continuous IC 8 Adc Total Device Dissipation @ TC = 70°C PD 185 Watts Derate above 70°C 1.43 W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W M MOotoTrOolaR, OIncL. A19 R96F DEVICE DATA MRF15060 MRF15060S, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 25 — — Vdc (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CES 60 — — Vdc (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 3 3.5 — Vdc (IE = 10 mAdc, IC = 0 mAdc) Collector Cutoff Current ICES — — 10 mAdc (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain hFE 20 40 80 — (IC = 1 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob — 55 — pF (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1) Common–Emitter Amplifier Power Gain Gpe 10 11.7 — dB (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 1490.0 MHz, f2 = 1490.1 MHz) Collector Efficiency η 33 38 — dB (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 1490.0 MHz, f2 = 1490.1 MHz) 3rd Order Intermodulation Distortion IMD — – 32 – 28 dB (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 1490.0 MHz, f2 = 1490.1 MHz) Input Return Loss IRL 12 20 — dB (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 1490.0 MHz, f2 = 1490.1 MHz) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, ψ No Degradation in Output Power f1 = 1490.0 MHz, f2 = 1490.1 MHz, VSWR = 3:1, at All Phase Angles) (1) For information only. This part is collector matched. MRF15060 MRF15060S MOTOROLA RF DEVICE DATA,

VBASE

Q1 R1 C17 C18 D1 Q2 VCC C10 C11 C12 R2 C13 C14 C15 C16 B1 R3 B2 R4 C6 C7 C8 C9 L1 L2 C3 TL4 TL1 TL3 OUTPUT INPUT TL2 C2 C1

DUT

C5 C4 B1, B2 Short RF Bead Fair Rite–2743019447 D1 Diode, 1N4003 C1, C2, C6, C8 18 pF, Chip Capacitor L1, L2 3 Turns, 20 AWG, IDIA 0.102″ (17.7 nH) C3 3.9 pF, Chip Capacitor Q1 Transistor, NPN BD135 C4, C5 0.6–4.5 pF, Variable Capacitor Q2 Transistor, PNP BD136 C7, C9 100 pF, Chip Capacitor R1 120 Ω, 1/4 W Resistor C10, C13 1000 pF, Chip Capacitor R2 51 Ω, 1/4 W, Chip Resistor C11, C14, C17 0.1 µF, 50 Vdc Ceramic Capacitor R3, R44x39 Ω, 1/8 W Chip Resistors C12, C15, C18 10 µF, 50 Vdc Electrolytic Capacitor TL1–TL4 Microstrip Line See Photomaster C16 250 µF, 50 Vdc Electrolytic Capacitor Board 1/32″ Glass Teflon, Arlon GX–0300–55–22, εr = 2.55

Figure 1. MRF15060 RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF15060 MRF15060S

,

TYPICAL CHARACTERISTICS

80 12.5 80 70 70 Pin = 5 W 60 Gpe 12 60 50 50 2.5 W 40 11.5 40 Pout VCC = 26 Vdc30 30 ICQ = 200 mA 20 11 201WSingle Tone VCC = 26 Vdc 10 ICQ = 200 mA 10 f = 1490.0 MHz 0 10.50012345671400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 2. Output Power & Power Gain Figure 3. Output Power versus Frequency

versus Input Power – 20 14 –10 – 25 – 30 –153rd Order Gpe – 35 12 –20 – 40 5th Order – 45 11 –25 – 50 IMD 10 –30 – 55 VCC = 26 Vdc – 60 ICQ = 200 mA ICQ = 200 mA 7th Order f1 = 1490.0 MHz f1 = 1490.0 MHz –35 – 65 f2 = 1490.1 MHz f2 = 1490.1 MHz – 70 8 –40 0 10 20 30 40 50 60 70 18 20 22 24 26 28 30 Pout, OUTPUT POWER (WATTS) PEP VCC, SUPPLY VOLTAGE (Vdc)

Figure 4. Intermodulation Distortion Figure 5. Power Gain and Intermodulation

versus Output Power Distortion versus Supply Voltage – 20 14 – 25 13 ICQ = 600 mA – 30 ICQ = 100 mA 12 400 mA – 35 200 mA 11 200 mA – 40 400 mA 10 600 mA VCC = 26 Vdc VCC = 26 Vdc – 45 f1 = 1490.0 MHz 9 100 mA f1 = 1490.0 MHz f2 = 1490.1 MHz f2 = 1490.1 MHz – 50 8 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion Figure 7. Power Gain versus Output Power

versus Output Power

MRF15060 MRF15060S MOTOROLA RF DEVICE DATA

IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (WATTS) Gpe, GAIN (dB) Gpe, POWER GAIN (dB) Gpe, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc), 13 50 60 G 50pe FUNDAMENTAL 12 45 40 11 40 20 η 10 3rd ORDER 10 VCC = 26 Vdc 35 3.0 0 ICQ = 200 mA V = 26 Vdc Pout = 60 W (PEP) 2.5 – 10 CE IC = 3A930 2.0 – 20 f1 = 1490.0 MHz VSWR 1.5 – 30 f2 = 1490.1 MHz 8 25 1.0 – 40 1425 1450 1475 1500 1525 1550 15 20 25 30 35 40 45 50 f, FREQUENCY (MHz) Pin, INPUT POWER (dBm)

Figure 8. Performance in Broadband Circuit Figure 9. Class A Third Order Intercept Point

Tflange = 75°C 4 Tflange = 100°C TJ = 175°C04812 16 20 24 28 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)

Figure 10. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF15060 MRF15060S

Gpe, POWER GAIN (dB) IC, COLLECTOR CURRENT (Adc) INPUT VSWR η, EFFICIENCY (%) Pout , OUTPUT POWER (dBm) BREAKDOWN LIMITED, 1400 MHz 1400 MHz 1600 1450 Zin 1500 ZOL* Zo = 10 Ω VCC = 26 Vdc, ICQ = 200 mA, Pout = 60 Watts PEP f Zin(1) ZOL* MHz Ohms Ohms 1400 1.07 + j3.4 2.25 + j3.1 1450 1.04 + j3.0 2.37 + j2.4 1500 1.01 + j2.7 2.46 + j2.1 1550 0.99 + j2.3 2.54 + j1.4 1600 0.97 + j1.9 2.66 + j1.0 Zin(1)= Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency.

Figure 11. Series Equivalent Input and Output Impedence MRF15060 MRF15060S MOTOROLA RF DEVICE DATA

, Q2 C14 C17 R1 D1 C11 C12 C13 R4 C15 C10 C16 R2 R3 B2C18 B1 C9 C6 C8 Q1 C7 C3 L1 L2 TL1 C1 W1 W2 C2 TL4 TL2 TL3 C4 C5 MRF15060 Figure 12. MRF15060 Component Parts Layout Table 1. Typical Common Emitter S–Parameters (VCC = 26 V) ID = 3.0AfS11 S21 S12 S22 MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1000 0.964 163 0.28 93 0.018 73 0.991 178 1050 0.958 162 0.30 87 0.018 76 0.989 178 1100 0.957 161 0.31 82 0.017 81 0.987 179 1150 0.956 160 0.34 76 0.022 73 0.982 179 1200 0.955 158 0.38 70 0.023 67 0.969 179 1250 0.953 157 0.42 62 0.022 57 0.956 180 1300 0.941 155 0.47 53 0.019 60 0.937 180 1350 0.922 154 0.55 43 0.015 64 0.915 -180 1400 0.920 153 0.67 28 0.013 66 0.891 -180 1450 0.901 152 0.80 6 0.012 71 0.880 -180 1500 0.903 151 0.83 -24 0.007 76 0.911 -179 1550 0.906 152 0.70 -54 0.008 89 0.954 -180 1600 0.913 153 0.51 -75 0.009 92 0.971 -180 1650 0.921 154 0.38 -89 0.010 95 0.973 -179 1700 0.946 154 0.29 -98 0.012 97 0.974 -179 1750 0.974 155 0.34 -107 0.014 105 0.976 -178 1800 0.968 154 0.19 -115 0.016 116 0.977 -178 1850 0.966 153 0.16 -121 0.018 138 0.978 -177 1900 0.947 152 0.14 -128 0.021 143 0.980 -177 1950 0.918 151 0.12 -138 0.027 151 0.982 -177 2000 0.912 150 0.09 -146 0.031 159 0.985 -176 MOTOROLA RF DEVICE DATA MRF15060 MRF15060S,

PACKAGE DIMENSIONS G NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 1 2. CONTROLLING DIMENSION: INCH.

R –B–

INCHES MILLIMETERS DIM MIN MAX MIN MAX3A0.995 1.005 25.27 25.532B0.380 0.390 9.65 9.91

Q 2 PL C 0.170 0.205 4.32 5.21 KDD0.455 0.465 11.56 11.810.25 (0.010) MTAMBME0.060 0.075 1.52 1.91

F 0.004 0.006 0.10 0.15 G 0.800 BSC 20.32 BSC H 0.078 0.090 1.98 2.29 K 0.117 0.137 2.97 3.48 N 0.595 0.605 15.11 15.37

NFQ0.120 0.130 3.05 3.30 H R 0.395 0.410 10.03 10.41E C –T– SEATINGPLANE STYLE 1:

PIN 1. COLLECTOR 2. BASE –A– 3. EMITTER

CASE 451–04 ISSUE D

1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. –B– 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

K 2 DIM MIN MAX MIN MAX

A 0.615 0.625 15.62 15.88 B 0.395 0.410 10.03 10.41

D C 0.170 0.205 4.32 5.21

D 0.455 0.465 11.56 11.81

NFE0.060 0.075 1.52 1.91 HEF0.004 0.006 0.10 0.15

H 0.078 0.090 1.98 2.29

C –T– SEATING K 0.117 0.137 2.97 3.48PLANE N 0.595 0.605 15.11 15.37

–A– 3 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER

CASE 451A–01 ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF15060 MRF15060S ◊ MOTOROLA RF DEVMICREF 1D5A0T6A0/D

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