Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power — 30 Watts 30 W, 1.5 GHz Gain — 9 dB Min @ 30 Watts (PEP) RF POWER TRANSISTOR Efficiency — 30% Min @ 30 Watts (PEP) NPN SILICON Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) • Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, I...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line

Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power — 30 Watts 30 W, 1.5 GHz Gain — 9 dB Min @ 30 Watts (PEP) RF POWER TRANSISTOR Efficiency — 30% Min @ 30 Watts (PEP) NPN SILICON Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) • Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc • Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz • Characterized with Small Signal S–Parameters from 1000–2000 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vdc, at Rated Output Power • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous IC 10 Adc Total Device Dissipation @ TC = 25°C PD 125 Watts Derate above 25°C 0.71 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.40 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 25 29 — Vdc (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CES 60 64 — Vdc (IC = 50 mAdc, VBE = 0) Collector–Emitter Breakdown Voltage V(BR)CER 30 52 — Vdc (IC = 50 mAdc, RBE = 100 Ω) (continued) REV7MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF15030,

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS — continued

Emitter–Base Breakdown Voltage V(BR)EBO45— Vdc (IE = 5 mAdc, IC = 0) Collector Cutoff Current ICES — — 10 mAdc (VCE = 30 Vdc, VBE = 0)

ON CHARACTERISTICS

DC Current Gain hFE 20 35 80 — (ICE = 1 Adc, VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance Cob — 38 — pF (VCB = 26 Vdc, IE = 0, f = 1 MHz)

FUNCTIONAL TESTS (Figure 12)

Common–Emitter Amplifier Power Gain Gpe 9.0 9.6 — dB (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Collector Efficiency η 30 34 — % (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Intermodulation Distortion IMD — – 34 – 30 dBc (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Input Return Loss IRL 12 15 — dB (VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Load Mismatch ψ (VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA, No Degradation in Output Power f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test)

TYPICAL CHARACTERISTICS

45 10.3 40 40 G 10.2pe 35 Pout Pin = 3.5 W35 10.1 30 30 10.0 25 2.5 W 25 9.9 20 9.8 1.5 W 15 9.7 10 VCC = 26 Vdc 9.6 10 VCC = 26 Vdc ICQ = 125 mA ICQ = 125 mA5f= 1490 MHz Single Tone 9.5 5 Single Tone 0 9.400123451400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

Figure 1. Output Power & Power Gain versus Input Power Figure 2. Output Power versus Frequency MRF15030 MOTOROLA RF DEVICE DATA

Pout, OUTPUT POWER (WATTS) Gpe, GAIN (dB) Pout, OUTPUT POWER (WATTS),

TYPICAL CHARACTERISTICS

– 20 12 60 11 Gpe 3rd Order 10 50 – 309840 η 5th 7 – 40 6 30 1.75 7th54VCC = 26 Vdc 20 1.50 – 50 VCC = 26 Vdc

P

3 out = 30 W (PEP) ICQ = 125 mA ICQ = 125 mA f1 = 1490 MHz 2 10 1.25

VSWR

f2 = 1490.1 MHz 1 – 60001.000510 15 20 25 30 35 40 1450 1460 1470 1480 1490 1500 1510 1520 1530 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz)

Figure 3. Intermodulation Distortion Figure 4. Performance in Broadband Circuit

versus Output Power – 25 10 – 30 9 ICQ = 400 mA – 35 ICQ = 75 mA 8 250 mA – 40 7 125 mA 125 mA VCC = 26 Vdc – 45 6 f1 = 1490 MHz VCC = 26 Vdc f2 = 1490.1 MHz 75 mA – 50 250 mA f1 = 1490 MHz 5 f2 = 1490.1 MHz – 55 400 mA 4 0.01 0.10 1.0 10 100 0.01 0.10 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion Figure 6. Power Gain versus Output Power

versus Output Power 11 – 25 60 10.5 40 Fundamental 10 – 30 Gain 20 9.5 10 IMD Third Order VCC = 24 Vdc 9 – 35 IC = 2.5 A –10 P = 30 W (PEP) f1 = 1490 MHzout I = 125 mA – 20 f2 = 1490.1 MHz8.5 CQ f1 = 1490 MHz – 30 f2 = 1490.1 MHz 8 – 40 – 40 18 20 22 24 26 28 10 15 20 25 30 35 40 45 50 VCE, COLLECTOR VOLTAGE (Vdc) Pin, INPUT POWER (dBm)

Figure 7. Power Gain and Intermodulation Figure 8. Class A Third Order Intercept Point Distortion versus Collector Voltage MOTOROLA RF DEVICE DATA MRF15030

Gpe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pout, OUTPUT POWER (dBm) Gpe , POWER GAIN (dB) Gpe , POWER GAIN (dB) η , COLLECTOR EFFICIENCY (%) INPUT VSWR,

TYPICAL CHARACTERISTICS

3 109 MTBF Limited Tflange = 75° C 2.5 108 2 Tflange = 100°C 1.5 TJ = 175°C 0.5 10 0 10404812 16 20 24 28 100 120 140 160 180 200 220 240 260 VCE, COLLECTOR VOLTAGE (Vdc) TJ, JUNCTION TEMPERATURE (°C)

Figure 9. DC Safe Operating Area Figure 10. MTBF Factor versus Junction Temperature

The above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application. 1.5 1.55 f = 1.6 GHz 1.4 1.45 Zin ZOL* Zo = 10 Ω 1.5 f = 1.6 GHz 1.4 1.55 1.45 f Zin Z*OL (GHz) (Ω) (Ω) 1.40 1.15 + j4.25 1.87 + j0.78 1.45 1.15 + j4.55 1.67 + j0.78 1.50 1.20 + j4.80 1.47 + j0.78 1.55 1.45 + j5.15 1.27 + j0.78 1.60 1.89 + j5.25 1.00 + j0.78 Z*OL = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.

Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 30 Watts (PEP), VCC = 26 Volts, ICQ = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz MRF15030 MOTOROLA RF DEVICE DATA

I C, COLLECTOR CURRENT (Adc) Breakdown Limited MTBF FACTOR (HOURS x AMPS2 ), Table 1. Small Signal S Parameters at VCE = 24 Vdc, IC = 2.5 Adc f S11 S21 S12 S22 MHz |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 1000 0.983 173 0.366 49 0.006 36 0.890 178 1050 0.984 172 0.367 46 0.007 33 0.893 178 1100 0.978 172 0.367 43 0.007 33 0.888 178 1150 0.975 171 0.373 40 0.007 30 0.885 178 1200 0.975 171 0.382 36 0.008 31 0.886 177 1250 0.969 170 0.391 33 0.007 27 0.881 177 1300 0.963 169 0.408 29 0.008 21 0.879 177 1350 0.955 169 0.428 25 0.009 20 0.879 177 1400 0.945 168 0.452 20 0.008 7 0.873 177 1450 0.933 167 0.487 13 0.009 1 0.875 178 1500 0.915 166 0.525 6 0.009 – 8 0.875 178 1550 0.889 166 0.572 – 3 0.009 –18 0.877 178 1600 0.856 166 0.618 –16 0.009 – 35 0.887 178 1650 0.833 168 0.654 – 30 0.010 – 54 0.901 178 1700 0.820 171 0.654 – 48 0.010 – 86 0.918 178 1750 0.839 174 0.600 – 66 0.010 –120 0.930 177 1800 0.872 175 0.517 – 81 0.010 –152 0.932 176 1850 0.909 176 0.435 – 94 0.010 –176 0.925 174 1900 0.937 175 0.357 –104 0.011 159 0.924 173 1950 0.957 174 0.296 –112 0.012 148 0.917 173 2000 0.970 173 0.247 –119 0.012 136 0.915 173 Vbias R4 R1 Q2 Q3 R5 R3 D1 R6B2 D2 Q1 + V C2 C3 R2 B1 C5 C7 CCB4 B3 + L1 C11 C13 C14 L2 C10 RF Input DUT RF Output N1 N2 C6 C12 C1 C4 C8 C9 B1, B4 Long Bead, Fair Rite D1 Surface Mount Diode, Motorola B2, B3 Short Bead, Fair Rite D2 Light Emitting Diode, Industrial Devices C1 0.3 pF, B Case Chip Capacitor, ATC L1, L2 3 Turn, 20 AWG, 0.126″ ID Choke C2 220 µF, Electrolytic Capacitor, Mallory N1, N2 Type N Flange Mount RF Connector, Omni Spectra C3, C14 0.1 µF, Chip Capacitor, Kemit Q1 Transistor PNP Motorola (BD136) C4, C8 0.8 to 8 pF, Variable Capacitor, Johanson Q2, Q3 Surface Mount Transistor, NPN, Motorola (MJD47) C5, C11 1800 pF, Chip Capacitor, Kemit R12x330 Ω, 1/8 Watt Chip Resistors in Parallel, Rohm C6, C12 18 pF, B Case Chip Capacitor, ATC R2 100 Ω, 1/8 Watt, Chip Resistor, Rohm C7, C10 51 pF, Chip Capacitor, Murata Erie R3, R64x38 Ω, 1/8 Watt, Chip Resistors in Parallel, Rohm C9 1.7 pF, B Case Chip Capacitor, ATC R4 39 Ω, 1/8 Watt, Chip Resistor, Rohm C13 470 µF, Electrolytic Capacitor, Mallory R5 22 KΩ, 1/8 Watt, Chip Resistor, Rohm Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 12. Class AB Broadband Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15030, V Supply R5 +C1 R1 Q1 R2 VCC Q2 R6 R9 R10 R3 R4 R7 R8 B2 + B1 VC6 C8

CC

C2 C3 B3 B4 + C13 C14 L1 L2 C11 C10 RF Input RF Output N1 DUT N2 C5 C12 C4 C7 C9 B1, B4 Long Bead, Fair Rite Q1 Transistor NPN Motorola (BD135) B2, B3 Short Bead, Fair Rite Q2 Transistor PNP Motorola (BD136) C1, C2 100 µF, Electrolytic Capacitor, Mallory R1 250 Ω, 1/8 Watt, Chip Resistor Rohm C3, C14 0.1 µF, Chip Capacitor, Kemit R2 500 Ω, 1/4 Watt Potentiometer, State of the Art C4 1.3 pF, B Case Chip Capacitor, ATC R3 4.7 KΩ, 1/8 Watt, Chip Resistor, Rohm C5, C12 18 pF, B Case Chip Capacitor, ATC R42x4.7 KΩ, 1/8 Watt, Chip Resistors in Parallel, Rohm C6, C11 1800 pF, Chip Capacitor, Kemit R5 1.0 Ω, 10 Watt, Resistor, Dale C7, C9 0.8 to 8 pF, Variable Capacitor, Johanson R6 38 Ω, 1.0 Watt, Resistor C8, C10 51 pF, Chip Capacitor, Murata Erie R7 75 Ω, 1/8 Watt, Chip Resistor, Rohm C13 470 µF, Electrolytic Capacitor, Mallory R82x10 Ω, 1/8 Watt, Chip Resistors in Parallel, Rohm L1, L2 3 Turn, 20 AWG, 0.126″ ID Choke R9, R104x38 Ω, 1/8 Watt, Chip Resistors in Parallel, Rohm N1, N2 Type N Flange Mount RF Connector, Omni Spectra Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MRF15030 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS

–A–

UQ2PL

1 0.51 (0.020) MTAMBMNOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX –B– A 0.739 0.750 18.77 19.05 B 0.240 0.260 6.10 6.603C0.165 0.198 4.19 5.03 D 0.215 0.225 5.46 5.72 E 0.055 0.070 1.40 1.78 H 0.079 0.091 2.01 2.31

K J 0.004 0.006 0.10 0.15

K 0.210 0.240 5.33 6.102N0.315 0.330 8.00 8.38 Q 0.125 0.135 3.18 3.42 STYLE 1:

D U 0.560 BSC 14.23 BSCPIN 1. BASE

2. COLLECTOR 3. EMITTER

N E J C H

–T– SEATING

PLANE CASE 395C–01 ISSUE A MOTOROLA RF DEVICE DATA MRF15030

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF15030 ◊ MOTOROLA RF DEVIMCREF D15A0T3A0/D

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