Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, to 175 MHz Power Gain = 18 dB (Typ) N–CHANNEL MOS Efficiency = 40% (Typ) LINEAR RF POWER FET • IMD(d3) (30 W PEP) — –35 dB (Typ) • IMD(d11) (30 W PEP) — –60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWRDGSCASE 211–07, STYLE 2 MAXIMUM RATINGS Rating Symbo...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF148/D The RF MOSFET Line N–Channel Enhancement–Mode

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, to 175 MHz Power Gain = 18 dB (Typ) N–CHANNEL MOS Efficiency = 40% (Typ) LINEAR RF POWER

FET

• IMD(d3) (30 W PEP) — –35 dB (Typ) • IMD(d11) (30 W PEP) — –60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

D G

S CASE 211–07, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 120 Vdc Drain–Gate Voltage VDGO 120 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 6.0 Adc Total Device Dissipation @ TC = 25°C PD 115 Watts Derate above 25°C 0.66 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.52 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV1MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA MRF148, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 1.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 0.8 1.2 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 50 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 35 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 8.0 — pF FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (30 MHz) Gps — 18 — dB (VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA) (175 MHz) — 15 — Drain Efficiency (30 W PEP) η — 40 — % (VDD = 50 V, f = 30 MHz, IDQ = 100 mA) (30 W CW) — 50 — Intermodulation Distortion dB (VDD = 50 V, Pout = 30 W (PEP), IMD(d3) — –35 — f = 30; 30.001 MHz, IDQ = 100 mA) IMD(d11) — –60 — Load Mismatch ψ (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, No Degradation in Output Power IDQ = 100 mA, VSWR 30:1 at all Phase Angles) CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS — 20 — dB (VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz, IMD(d3) — –50 — f2 = 30.001 MHz, IDQ = 1.0 A) IMD(d9–13) — –70 — NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 L2 BIAS + + 0 – 10 V – 50 VC1 C4 C5 C6 C7 – R1

DUT

T2 RF R3 C2 OUTPUT RF T1 INPUT C8 R2 C3 R4 C1, C2, C3, C4, C5, C6 — 0.1 µF Ceramic Chip or Equivalent R1, R2 — 200 Ω, 1/2 W Carbon C7 — 10 µF, 100 V Electrolytic R3 — 4.7 Ω, 1/2 W Carbon C8 — 100 pF Dipped Mica R4 — 470 Ω, 1.0 W Carbon L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0 µH) T1 — 4:1 Impedance Transformer L2 — Ferrite Bead(s), 2.0 µH T2 — 1:2 Impedance Transformer Figure 1. 2.0 to 50 MHz Broadband Test Circuit MRF148 MOTOROLA RF DEVICE DATA, 25 60 40 VDD = 50 V20 20 40VI= 100 mA 15 DQ VDD = 50V0IDQ = 100 mA 10 Pout = 30 W (PEP) 60 VDD = 50 V 20 40 V IDQ = 100 mA002510 20 50 100 200 0 0.5 1 1.5 2 2.5 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

– 30 2000 d3 VDS = 30 V – 40 d5 VDS = 15 V– 50 VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz 1000 – 30 d – 403d– 5050010 20 30 4001234Pout, OUTPUT POWER (WATTS PEP) ID, DRAIN CURRENT (AMPS)

Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency

versus Drain Current + BIAS R2 + 50 Vdc RFC1 0 – 6 V C3 C2 C4 C5 L2 D.U.T. C7 RF OUTPUT RF INPUT R1 L1 C6 C1 T1 C1 — 91 pF Unelco Type MCM 01/010 L2 — 4 Turns #18 AWG, 5/16″ ID C2, C4 — 0.1 µF Erie Red Cap R1 — 1.0 Ohm, 1/4 W Carbon 50 Ω C3 — Allen Bradley 680 pF Feed Thru R2 — 2000 Ohm, 1/4 W Carbon 12.5 Ω C5 — 1.0 µF, 50 Vdc Electrolytic RFC1 — VK200 21/4B C6 — 15 pF Unelco Type J101 T1 — 4:1 Transformer, 1.75″ Subminiature T1 — 4:1 Impedance Ratio C7 — 24 pF Unelco Type MCM 01/010 T1 — Coaxial Cable T1 — Transformer, Line L1 — 2 Turns #18 AWG, 5/16″ ID T1 — Impedance = 25 Ω

Figure 6. 150 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF148

IMD, INTERMODULATION DISTORTION (dB) POWER GAIN (dB) 30 MHz 150 MHz f T, UNITY GAIN FREQUENCY (MHz) Pout , OUTPUT POWER (WATTS) 30 MHz 150 MHz, 2 10 TC = 25°C110.7 0.5 VDS = 10 V 0.3 gfs = 1.2 mho 0.2 0 0.1012345678910 0.2 0.4 0.7124710 20 40 70 100 200 VGS, GATE–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 7. Gate Voltage versus Drain Current Figure 8. DC Safe Operating Area (SOA)

30 ZOL* 15 f = 2.0 MHz VDD = 50VZIDQ = 100 mA 7.0 in Pout = 30 W PEP Gate Shunted By 100 Ω 4.0 f = 2.0 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.

Figure 9. Impedance Coordinates — 50 Ohm Characteristic Impedance MRF148 MOTOROLA RF DEVICE DATA

I DS, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS),

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES Since this test is performed at a fast sweep speed, heating of The physical structure of a MOSFET results in capacitors the device does not occur. Thus, in normal use, the higher between the terminals. The metal oxide gate structure temperatures may degrade these characteristics to some determines the capacitors from gate–to–drain (Cgd), and extent. gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci- DRAIN CHARACTERISTICS tance from drain–to–source (Cds). One figure of merit for a FET is its static resistance in the These capacitances are characterized as input (Ciss), full–on condition. This on–resistance, VDS(on), occurs in theoutput (Coss) and reverse transfer (Crss) capacitances on data linear region of the output characteristic and is specified under sheets. The relationships between the inter–terminal capaci- specific test conditions for gate–source voltage and drain tances and those given on data sheets are shown below. The current. For MOSFETs, VDS(on) has a positive temperatureCiss can be specified in two ways: coefficient and constitutes an important design consideration 1. Drain shorted to source and positive voltage at the gate. at high temperatures, because it contributes to the power 2. Positive voltage of the drain in respect to source and zero dissipation within the device. volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operat- GATE CHARACTERISTICS ing conditions in RF applications. The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — DRAIN resulting in a leakage current of a few nanoamperes. Cgd Gate control is achieved by applying a positive voltage GATE Ciss = Cgd + Cgs slightly in excess of the gate–to–source threshold voltage, Cds Coss = Cgd + Cds VGS(th). Crss = Cgd Gate Voltage Rating — Never exceed the gate voltage Cgs rating. Exceeding the rated VGS can result in permanent SOURCE damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–cir- LINEARITY AND GAIN CHARACTERISTICS cuited or floating should be avoided. These conditions can In addition to the typical IMD and power gain data result in turn–on of the devices due to voltage build–up on the presented, Figure 5 may give the designer additional informa- input capacitor due to leakage currents or pickup. tion on the capabilities of this device. The graph represents the Gate Protection — These devices do not have an internal small signal unity current gain frequency at a given drain monolithic zener diode from gate–to–source. If gate protection current level. This is equivalent to fT for bipolar transistors. is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector .Drain Emitter .Source Base .Gate V(BR)CES .V(BR)DSS VCBO .VDGO IC .ID ICES .IDSS IEBO .IGSS VBE(on) .VGS(th) VCE(sat) .VDS(on) Cib .Ciss Cob .Coss hfe .gfs V VCE(sat) DS(on)RCE(sat) = .rDS(on) = I IC D MOTOROLA RF DEVICE DATA MRF148,

PACKAGE DIMENSIONS A U NOTES: M 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q1MINCHES MILLIMETERS

4 DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14

RBB0.370 0.390 9.40 9.90

C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.6623H0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15

D S K 0.395 0.405 10.04 10.28K M 40 50 40 50

Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 STYLE 2:

J PIN 1. SOURCE

2. GATE 3. SOURCE

C H 4. DRAINE SEATING PLANE CASE 211–07 ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF148 ◊ MOTOROLA RF DEVICEM RDFA1T4A8/D

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