Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: 150 W, 28 V, 175 MHz Output Power — 150 W N–CHANNEL Gain — 18 dB (22 dB Typ) BROADBAND Efficiency — 40% RF POWER MOSFET • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Th...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 28 V: 150 W, 28 V, 175 MHz Output Power — 150 W N–CHANNEL Gain — 18 dB (22 dB Typ) BROADBAND Efficiency — 40% RF POWER MOSFET • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability D

G

S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C PD 300 Watts Derate above 25°C 1.71 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.6 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV8MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF141, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 5.0 7.0 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 350 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 420 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 35 — pF FUNCTIONAL TESTS Common Source Amplifier Power Gain, f = 30; 30.001 MHz Gps 16 20 — dB (VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz — 10 — Drain Efficiency η 40 45 — % (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, ID (Max) = 5.95 A) Intermodulation Distortion (1) dB (VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz, IMD(d3) — –30 –28 f2 = 30.001 MHz, IDQ = 250 mA) IMD(d11) — –60 — Load Mismatch ψ (VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, No Degradation in Output Power IDQ = 250 mA, VSWR 30:1 at all Phase Angles) CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS — 23 — dB (VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz, IMD(d3) — –50 — f2 = 30.001 MHz, IDQ = 4.0 A) IMD(d9–13) — –75 — NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS + +L1 + 0 – 12 V C8 L2 C9 C10 28 V– C11 R4 C5 C6 C7 – –

RF

R1 C4 T2 D.U.T. OUTPUT R3 C2 RF INPUT T1 C3 R2 C12 C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH Monolythic with Short Leads L2 — Ferrite Bead(s), 2.0 µH C3 — Arco 469 R1, R2 — 51 Ω/1.0 W Carbon C4 — 820 pF Unencapsulated Mica or Dipped Mica R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors with Short Leads R4 — 1 kΩ/1/2 W Carbon C10 — 10 µF/100 V Electrolytic T1 — 16:1 Broadband Transformer C11 — 1 µF, 50 V, Tantalum T2 — 1:25 Broadband Transformer C12 — 330 pF, Dipped Mica (Short leads) Board Material — 0.062″ Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, r = 5 Figure 1. 30 MHz Test Circuit (Class AB) MRF141 MOTOROLA RF DEVICE DATA,

TYPICAL CHARACTERISTICS

100 1.04 1.03 1.02 ID = 5 A 1.01 0.99 0.984A10 0.97 0.962A0.95 0.941ATC = 25°C 0.93 0.5 A 0.92 0.25 A 0.91 1 0.9 1 10 100 – 25 0 25 50 75 100 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 2. DC Safe Operating Area Figure 3. Gate–Source Voltage versus Case Temperature

2000 200 VDS = 20 V Coss 10 V Ciss 1000 200 Crss 0 200246810 12 14 16 18 200510 15 20 25 ID, DRAIN CURRENT (AMPS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 4. Common Source Unity Gain Frequency Figure 5. Capacitance versus

versus Drain Current Drain–Source Voltage 30 300 25 f = 175 MHz 100 VDD = 28 V IDQ = 250 mA00510 15 20 25 15 VDD = 28 V 300 IDQ = 250 mA Pout = 150 W 200 10 f = 30 MHz 100 VDD = 28 V IDQ = 250 mA50210 100 200012345f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

Figure 6. Power Gain versus Frequency Figure 7. Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF141

GPS, POWER GAIN (dB) f T, UNITY GAIN FREQUENCY (MHz) ID, DRAIN CURRENT (AMPS) Pout, OUTPUT POWER (WATTS) C, CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (NORMALIZED),

TYPICAL CHARACTERISTICS

320 320 f = 30 MHz 280 f = 175 MHzIDQ = 250 mA 280 IDQ = 250 mA 240 240 200 Pin = 4 W 200 Pin = 20 W 160 1602W120 120 14W1W80 808W40 400012 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 28 SUPPLY VOLTAGE (VOLTS) SUPPLY VOLTAGE (VOLTS)

Figure 8. Output Power versus Supply Voltage Figure 9. Output Power versus Supply Voltage

d3 35 d5 IDQ = 250 mA VDD = 28, f = 30 MHz, TONE SEPARATION = 1 kHz d3 45 d5 IDQ = 500 mA 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS)

Figure 10. IMD versus Pout (PEP) MRF141 MOTOROLA RF DEVICE DATA

Pout, OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dB) Pout, OUTPUT POWER (WATTS), Zo = 10 Ω VDD = 28 V IDQ = 250 mA Pout = 150 W PEP ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 7.5 100 4 Zin 30 150 2 1002f= 175 MHz ZOL* f = 175 MHz

Figure 11. Input and Output Impedances

RFC1 + 28 V + R1 L4 C10BIAS C11– 0 – 12 V + C4 C5

DUT

R3 L3 L2 C9 RF C1 OUTPUTL1 RF INPUT R2 C6 C7 C8 C2 C3 C1, C2, C8 — Arco 463 or equivalent L1 — 3/4″, #18 AWG into Hairpin C3 — 25 pF, Unelco L2 — Printed Line, 0.200″ x 0.500″ C4 — 0.1 µF, Ceramic L3 — 7/8″, #16 AWG into Hairpin C5 — 1.0 µF, 15 WV Tantalum L4 — 2 Turns, #16 AWG, 5/16 ID C6 — 25 pF, Unelco J101 RFC1 — 5.6 µH, Molded Choke C7 — 25 pF, Unelco J101 RFC2 — VK200–4B C9 — Arco 262 or equivalent R1 — 150 Ω, 1.0 W Carbon C10 — 0.05 µF, Ceramic R2 — 10 kΩ, 1/2 W Carbon C11 — 15 µF, 35 WV Electrolytic R3 — 120 Ω, 1/2 W Carbon

Figure 12. 175 MHz Test Circuit (Class AB) MOTOROLA RF DEVICE DATA MRF141

, RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES ing should be avoided. These conditions can result in turn– The physical structure of a MOSFET results in capacitors on of the device due to voltage build–up on the input between the terminals. The metal anode gate structure de- capacitor due to leakage currents or pickup. termines the capacitors from gate–to–drain (Cgd), and gate– Gate Protection — This device does not have an internal to–source (Cgs). The PN junction formed during the monolithic zener diode from gate–to–source. If gate protec- fabrication of the MOSFET results in a junction capacitance tion is required, an external zener diode is recommended. from drain–to–source (Cds). Using a resistor to keep the gate–to–source impedance These capacitances are characterized as input (Ciss), out- low also helps damp transients and serves another important put (Coss) and reverse transfer (Crss) capacitances on data function. Voltage transients on the drain can be coupled to sheets. The relationships between the inter–terminal capaci- the gate through the parasitic gate–drain capacitance. If the tances and those given on data sheets are shown below. The gate–to–source impedance and the rate of voltage change Ciss can be specified in two ways: on the drain are both high, then the signal coupled to the gate 1. Drain shorted to source and positive voltage at the gate. may be large enough to exceed the gate–threshold voltage and turn the device on. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. HANDLING CONSIDERATIONS However, neither method represents the actual operat- When shipping, the devices should be transported only in ing conditions in RF applications. antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered DRAIN to. Those handling the devices should wear grounding straps Cgd and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case GATE Ciss = Cgd = Cgs C and not by the leads, and when testing the device, all leadsds Coss = Cgd = Cds C = C should make good electrical contact before voltage is ap-rss gd plied. As a final note, when placing the FET into the system it Cgs SOURCE is designed for, soldering should be done with a grounded iron. LINEARITY AND GAIN CHARACTERISTICS DESIGN CONSIDERATIONS In addition to the typical IMD and power gain data pres- The MRF141 is an RF Power, MOS, N–channel enhance- ented, Figure 4 may give the designer additional information ment mode field–effect transistor (FET) designed for HF and on the capabilities of this device. The graph represents the VHF power amplifier applications. small signal unity current gain frequency at a given drain cur- Motorola Application Note AN211A, FETs in Theory and rent level. This is equivalent to f for bipolar transistors. Practice, is suggested reading for those not familiar with theT Since this test is performed at a fast sweep speed, heating of construction and characteristics of FETs. the device does not occur. Thus, in normal use, the higher The major advantages of RF power MOSFETs include temperatures may degrade these characteristics to some ex- high gain, low noise, simple bias systems, relative immunity tent. from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output DRAIN CHARACTERISTICS can be varied over a wide range with a low power dc control One figure of merit for a FET is its static resistance in the signal. full–on condition. This on–resistance, VDS(on), occurs in the DC BIAS linear region of the output characteristic and is specified un- The MRF141 is an enhancement mode FET and, there- der specific test conditions for gate–source voltage and drain fore, does not conduct when drain voltage is applied. Drain current. For MOSFETs, VDS(on) has a positive temperature current flows when a positive voltage is applied to the gate. coefficient and constitutes an important design consideration RF power FETs require forward bias for optimum perfor- at high temperatures, because it contributes to the power mance. The value of quiescent drain current (IDQ) is not criti- dissipation within the device. cal for many applications. The MRF141 was characterized at IDQ = 250 mA, each side, which is the suggested minimumGATE CHARACTERISTICS value of IDQ. For special applications such as linear amplifi-The gate of the MOSFET is a polysilicon material, and is cation, IDQ may have to be selected to optimize the criticalelectrically isolated from the source by a layer of oxide. The 9 parameters.input resistance is very high — on the order of 10 ohms — The gate is a dc open circuit and draws no current. There- resulting in a leakage current of a few nanoamperes. fore, the gate bias circuit may be just a simple resistive divid- Gate control is achieved by applying a positive voltage er network. Some applications may require a more elaborate slightly in excess of the gate–to–source threshold voltage, bias sytem. VGS(th). Gate Voltage Rating — Never exceed the gate voltage GAIN CONTROL rating. Exceeding the rated VGS can result in permanent Power output of the MRF141 may be controlled from its damage to the oxide layer in the gate region. rated value down to zero (negative gain) by varying the dc Gate Termination — The gate of this device is essentially gate voltage. This feature facilitates the design of manual capacitor. Circuits that leave the gate open–circuited or float- gain control, AGC/ALC and modulation systems. MRF141 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS A U NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

M Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 M INCHES MILLIMETERS

Q 4 DIM MIN MAX MIN MAX

A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95

RBC0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.5223J0.003 0.007 0.08 0.17

D K 0.435 ––– 11.05 –––M 45 NOM 45 NOM K Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

J U 0.720 0.730 18.29 18.54 H C STYLE 2:E SEATING PIN 1. SOURCE

PLANE 2. GATE 3. SOURCE 4. DRAIN

CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF141

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps

MRF141 ◊ MOTOROLA RF DEVICMER DFA1T4A1/D

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