Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: 300 W, 28 V, 175 MHz Output Power — 300 W N–CHANNEL Gain — 12 dB (14 dB Typ) BROADBAND Efficiency — 50% RF POWER MOSFET • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF141G/D The RF MOSFET Line N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: 300 W, 28 V, 175 MHz Output Power — 300 W N–CHANNEL Gain — 12 dB (14 dB Typ) BROADBAND Efficiency — 50% RF POWER MOSFET • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability

D G S

G (FLANGE) D CASE 375–04, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 32 Adc Total Device Dissipation @ TC = 25°C PD 500 Watts Derate above 25°C 2.85 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.35 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV2MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRF141G, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage V(BR)DSS 65 — — Vdc (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current IDSS — — 5.0 mAdc (VDS = 28 V, VGS = 0) Gate–Body Leakage Current IGSS — — 1.0 µAdc (VGS = 20 V, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage VGS(th) 1.0 3.0 5.0 Vdc (VDS = 10 V, ID = 100 mA) Drain–Source On–Voltage VDS(on) 0.1 0.9 1.5 Vdc (VGS = 10 V, ID = 10 A) Forward Transconductance gfs 5.0 7.0 — mhos (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance Ciss — 350 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance Coss — 420 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss — 35 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (2) Common Source Amplifier Power Gain Gps 12 14 — dB (VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz) Drain Efficiency η 45 55 — % (VDD = 28 V, Pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A) Load Mismatch ψ (VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz, No Degradation in Output Power VSWR 5:1 at all Phase Angles) NOTES: 1. Each side measured separately. 2. Measured in push–pull configuration. MRF141G MOTOROLA RF DEVICE DATA, R1 L2 + + BIAS 0 – 6 V C4 C5 C10 C11 C12 28 V HIGH 9:1 – – IMPEDANCE CENTER IMPEDANCE L1 OUTPUT WINDINGS TAP RATIO DUT T2 INPUT CENTERC2 T1 C13 TAP C6 C7 C1 CONNECTIONS4:1 C8 C9 TO LOW C3 IMPEDANCE IMPEDANCE RATIO WINDINGS C1 — Arco 402, 1.5–20 pF T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms C2 — Arco 406, 15–115 pF T1 — Semirigid Co–Ax, 62–90 Mils O.D. C3, C4, C8, C9, C10 — 1000 pF Chip T2 — 1:9 RF Transformer. Can be made of 15–18 Ohms C5, C11 — 0.1 µF Chip T2 — Semirigid Co–Ax, 70–90 Mils O.D. C6 — 330 pF Chip Board Material — 0.062″ Fiberglass (G10), C7 — 200 pF and 180 pF Chips in Parallel 1 oz. Copper Clad, 2 Sides, εr = 5 C12 — 0.47 µF Ceramic Chip, Kemet 1215 or Equivalent C13 — Arco 403, 3.0–35 pF NOTE: For stability, the input transformer T1 must be loaded L1 — 10 Turns AWG #16 Enameled Wire, NOTE: with ferrite toroids or beads to increase the common L1 — Close Wound, 1/4″ I.D. NOTE: mode inductance. For operation below 100 MHz. The L2 — Ferrite Beads of Suitable Material for NOTE: same is required for the output transformer. L2 — 1.5–2.0 µH Total Inductance See pictures for construction details. R1 — 100 Ohms, 1/2 W R2 — 1.0 kOhm, 1/2 W Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.

Figure 1. 175 MHz Test Circuit TYPICAL CHARACTERISTICS

100 1.04 1.03 1.02 ID = 5 A 1.01 0.99 0.984A10 0.97 0.96 0.952A0.94 0.93 ° 1 ATC = 25 C 0.92 0.91 0.5 A 0.25A10.9 1 10 100 – 25 0 25 50 75 100 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 2. DC Safe Operating Area Figure 3. Gate–Source Voltage versus Case Temperature MOTOROLA RF DEVICE DATA MRF141G

ID, DRAIN CURRENT (AMPS) VGS, GATE-SOURCE VOLTAGE (NORMALIZED),

TYPICAL CHARACTERISTICS

2000 2000 V = 20 V CDS oss 10 V Ciss 1000 200 Crss 0 200246810 12 14 16 18 200510 15 20 25 ID, DRAIN CURRENT (AMPS) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G.

Figure 4. Common Source Unity Gain Frequency Figure 5. Capacitance versus

versus Drain Current Drain–Source Voltage 30 400 25 f = 175 MHz Pin = 30 W IDQ = 250 mAx220 W 20 250 10 W 15 150 VDD = 28 V 100 10 IDQ = 2 x 250 mA Pout = 300 W 50502510 30 100 200 12 14 16 18 20 22 24 26 28 f, FREQUENCY (MHz) SUPPLY VOLTAGE (VOLTS)

Figure 6. Power Gain versus Frequency Figure 7. Output Power versus Supply Voltage

150 f = 175 MHz 125 INPUT, Zin (GATE TO GATE) 125 150 100 f = 175 MHz OUTPUT, ZOL* 30 30 (DRAIN TO DRAIN) Zo = 10 Ω ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.

Figure 8. Input and Output Impedances MRF141G MOTOROLA RF DEVICE DATA

GPS, POWER GAIN (dB) fT, UNITY GAIN FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) C, CAPACITANCE (pF), RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES ing should be avoided. These conditions can result in turn– The physical structure of a MOSFET results in capacitors on of the device due to voltage build–up on the input between the terminals. The metal anode gate structure de- capacitor due to leakage currents or pickup. termines the capacitors from gate–to–drain (Cgd), and gate– Gate Protection — This device does not have an internal to–source (Cgs). The PN junction formed during the monolithic zener diode from gate–to–source. If gate protec- fabrication of the MOSFET results in a junction capacitance tion is required, an external zener diode is recommended. from drain–to–source (Cds). Using a resistor to keep the gate–to–source impedance These capacitances are characterized as input (Ciss), out- low also helps damp transients and serves another important put (Coss) and reverse transfer (Crss) capacitances on data function. Voltage transients on the drain can be coupled to sheets. The relationships between the inter–terminal capaci- the gate through the parasitic gate–drain capacitance. If the tances and those given on data sheets are shown below. The gate–to–source impedance and the rate of voltage change Ciss can be specified in two ways: on the drain are both high, then the signal coupled to the gate 1. Drain shorted to source and positive voltage at the gate. may be large enough to exceed the gate–threshold voltage and turn the device on. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. HANDLING CONSIDERATIONS However, neither method represents the actual operat- When shipping, the devices should be transported only in ing conditions in RF applications. antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered DRAIN to. Those handling the devices should wear grounding straps Cgd and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case GATE Ciss = Cgd = Cgs C and not by the leads, and when testing the device, all leadsds Coss = Cgd = Cds C = C should make good electrical contact before voltage is ap-rss gd plied. As a final note, when placing the FET into the system it Cgs SOURCE is designed for, soldering should be done with a grounded iron. LINEARITY AND GAIN CHARACTERISTICS DESIGN CONSIDERATIONS In addition to the typical IMD and power gain data pres- The MRF141G is an RF Power, MOS, N–channel en- ented, Figure 4 may give the designer additional information hancement mode field–effect transistor (FET) designed for on the capabilities of this device. The graph represents the HF and VHF power amplifier applications. small signal unity current gain frequency at a given drain cur- Motorola Application Note AN211A, FETs in Theory and rent level. This is equivalent to f for bipolar transistors. Practice, is suggested reading for those not familiar with theT Since this test is performed at a fast sweep speed, heating of construction and characteristics of FETs. the device does not occur. Thus, in normal use, the higher The major advantages of RF power MOSFETs include temperatures may degrade these characteristics to some ex- high gain, low noise, simple bias systems, relative immunity tent. from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output DRAIN CHARACTERISTICS can be varied over a wide range with a low power dc control One figure of merit for a FET is its static resistance in the signal. full–on condition. This on–resistance, VDS(on), occurs in the DC BIAS linear region of the output characteristic and is specified un- The MRF141G is an enhancement mode FET and, there- der specific test conditions for gate–source voltage and drain fore, does not conduct when drain voltage is applied. Drain current. For MOSFETs, VDS(on) has a positive temperature current flows when a positive voltage is applied to the gate. coefficient and constitutes an important design consideration RF power FETs require forward bias for optimum perfor- at high temperatures, because it contributes to the power mance. The value of quiescent drain current (IDQ) is not criti- dissipation within the device. cal for many applications. The MRF141G was characterized at IDQ = 250 mA, each side, which is the suggested minimumGATE CHARACTERISTICS value of IDQ. For special applications such as linear amplifi-The gate of the MOSFET is a polysilicon material, and is cation, IDQ may have to be selected to optimize the criticalelectrically isolated from the source by a layer of oxide. The 9 parameters.input resistance is very high — on the order of 10 ohms — The gate is a dc open circuit and draws no current. There- resulting in a leakage current of a few nanoamperes. fore, the gate bias circuit may be just a simple resistive divid- Gate control is achieved by applying a positive voltage er network. Some applications may require a more elaborate slightly in excess of the gate–to–source threshold voltage, bias sytem. VGS(th). Gate Voltage Rating — Never exceed the gate voltage GAIN CONTROL rating. Exceeding the rated VGS can result in permanent Power output of the MRF141G may be controlled from its damage to the oxide layer in the gate region. rated value down to zero (negative gain) by varying the dc Gate Termination — The gate of this device is essentially gate voltage. This feature facilitates the design of manual capacitor. Circuits that leave the gate open–circuited or float- gain control, AGC/ALC and modulation systems. MOTOROLA RF DEVICE DATA MRF141G,

PACKAGE DIMENSIONS U NOTES:Q RADIUS 2 PL 1. DIMENSIONING AND TOLERANCING PER ANSI G Y14.5M, 1982.

0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 1.330 1.350 33.79 34.29B 0.370 0.410 9.40 10.41

5 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96

K34E0.050 0.070 1.27 1.77

G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84

D J 0.004 0.006 0.11 0.15

K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23

J Q 0.060 0.070 1.52 1.78 ENR0.390 0.410 9.91 10.41

U 1.100 BSC 27.94 BSC

H STYLE 2:

–T– SEATING PIN 1. DRAINPLANE 2. DRAIN –A– C 3. GATE 4. GATE 5. SOURCE

CASE 375–04 ISSUE D

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF141G ◊ MOTOROLA RF DEVICMER FD1A4T1GA/D

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