Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency — 60% (Typical) N–CHANNEL MOS • Small–Signal and Large–Signal Characterization BROADBAND RF POWER FET • Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz • Excel...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line N–Channel Enhancement–Mode

.designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency — 60% (Typical) N–CHANNEL MOS • Small–Signal and Large–Signal Characterization BROADBAND RF POWER

FET

• Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation

D

• Facilitates Manual Gain Control, ALC and Modulation Techniques

G

CASE 211–07, STYLE 2

S

MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGR 65 Vdc (RGS = 1.0 MΩ) Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 5.0 Adc Total Device Dissipation @ TC = 25°C PD 100 Watts Derate above 25°C 0.571 W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.75 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF137, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 4.0 mAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 500 mA) gfs 500 750 — mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 48 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 54 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 11 — pF FUNCTIONAL CHARACTERISTICS Noise Figure NF — 1.5 — dB (VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz) Common Source Power Gain Gps dB (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz (Figure 1) 13 16 — IDQ = 25 mA) f = 400 MHz (Figure 14) — 7.7 — Drain Efficiency (Figure 1) η 50 60 — % (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA) Electrical Ruggedness (Figure 1) ψ (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA, No Degradation in Output Power VSWR 30:1 at All Phase Angles) RFC2 R4 C9 C10 + VDD = 28 V

BIAS

ADJUST + R3 D1 C7 C8 – R2 RFC1 C6 C5 R1 RF RF C1 L1 L2 L3 OUTPUT

INPUT DUT

C2 C3 C4 C1 — Arco 403, 3.0–35 pF, or equivalent L1 — 2 Turns, 0.29″ ID, #18 AWG Enamel, Closewound C2 — Arco 406, 15–115 pF, or equivalent L2 — 1–1/4 Turns, 0.2″ ID, #18 AWG Enamel, Closewound C3 — 56 pF Mini–Unelco, or equivalent L3 — 2 Turns, 0.2″ ID, #18 AWG Enamel, Closewound C4 — Arco 404, 8.0–60 pF, or equivalent RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel, Closewound C5 — 680 pF, 100 Mils Chip RFC2 — Ferroxcube VK–200 — 19/4B C6 — 0.01 µF, 100 V, Disc Ceramic R1 — 10 kΩ, 1/2 W Thin Film C7 — 100 µF, 40 V R2 — 10 kΩ, 1/4 W C8 — 0.1 µF, 50 V, Disc Ceramic R3 — 10 Turns, 10 kΩ C9, C10 — 680 pF Feedthru R4 — 1.8 kΩ, 1/2 W D1 — 1N5925A Motorola Zener Board — G10, 62 Mils Figure 1. 150 MHz Test Circuit MRF137 MOTOROLA RF DEVICE DATA, 50 20 f = 100 MHz f = 100 MHz 150 MHz 150 MHz 40 200 MHz 200 MHz VDD = 28 V VDD = 13.5 V5 10 IDQ = 25 mA IDQ = 25 mA0000.5 1 1.5201234Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

40 50 f = 400 MHz VDD = 28 VIDQ = 25 mA Pin = 1 W40 30 0.5 W VDD = 13.5 V 20 0.25 W IDQ = 25 mA f = 100 MHz000246810 12 16 20 24 28 Pin, INPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage

50 50 Pin = 1.5 W 40 40 Pin = 2 W 30 0.75 W 30 1.5 W 0.5 W 20 20 0.75 W 10 10 IDQ = 25 mA IDQ = 25 mA f = 150 MHz f = 200 MHz0012 16 20 24 28 12 16 20 24 28 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF137

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), 50 30 VDD = 28 V 25 IDQ = 25 mA40 P = CONSTANT 400 MHzPin = 8 W in 30 TYPICAL DEVICE SHOWN, 5 W 15 VGS(th) = 3 V 150 MHz2WI= 25 mA 5DQ f = 400 MHz0012 16 20 24 28 – 9 – 8 – 6 – 4 – 20123VDD, SUPPLY VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 8. Output Power versus Supply Voltage Figure 9. Output Power versus Gate Voltage

3 1.02 ID = 1.25A1ATYPICAL DEVICE SHOWN, 1 VGS(th) = 3 V 750 mA 0.98 VDS = 10 V 0.96 500 mA 25 mA 0.94 VDS = 28 V 200 mA 0.9201234567– 25 0 25 50 75 100 125 150 175 VGS, GATE–SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 10. Drain Current versus Gate Voltage Figure 11. Gate Source Voltage versus

(Transfer Characteristics) Case Temperature 200 10 180 TC = 25°C 160 VGS = 0Vf= 1 MHz 120 Coss 100 1 80 Ciss 0.5

C

40 rss 0 0.104812 16 20 24 2812510 20 60 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 12. Capacitance versus Figure 13. DC Safe Operating Area Drain–Source Voltage MRF137 MOTOROLA RF DEVICE DATA

C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPS) Pout, OUTPUT POWER (WATTS) ID, DRAIN CURRENT (AMPS) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Pout, OUTPUT POWER (WATTS), RFC2 R4 C10 C11 V = 28 V BIAS DD ADJUST + C12 C13R3 D1 – C9 RFC1 R2 C8 R1 RF Z4 Z5 Z6 OUTPUT

RF

Z1 Z2 Z3

INPUT

C5 DUT C7 C3 C4 C1 C6 C2 C1, C2, C3, C4 — 0–20 pF Johanson, or equivalent R4 — 1.8 kΩ, 1/2 W C5, C8 — 270 pF, 100 Mil Chip Z1 — 2.9″ x 0.166″ Microstrip C6, C7 — 24 pF Mini–Unelco, or equivalent Z2, Z4 — 0.35″ x 0.166″ Microstrip C9 — 0.01 µF, 100 V, Disc Ceramic Z3 — 0.40″ x 0.166″ Microstrip C10 — 100 µF, 40 V Z5 — 1.05″ x 0.166″ Microstrip C11 — 0.1 µF, 50 V, Disc Ceramic Z6 — 1.9″ x 0.166″ Microstrip C12, C13 — 680 pF Feedthru RFC1 — 6 Turns, 0.300″ ID, #20 AWG Enamel, Closewound D1 — 1N5925A Motorola Zener RFC2 — Ferroxcube VK–200 — 19/4B R1, R2 — 10 kΩ, 1/4 W Board — Glass Teflon, 62 Mils R3 — 10 Turns, 10 kΩ

Figure 14. 400 MHz Test Circuit

200 400 Zin 150 400

Z

f = 100 MHz 150 OL * f = 100 MHz VDD = 28 V, IDQ = 25 mA, Pout = 30WfZin ZOL* MHz Ohms Ohms 100 2.11 – j11.07 8.02 – j2.89 150 1.77 – j7.64 5.75 – j3.02 200 1.85 – j3.75 3.52 – j2.67 400 1.74 + j3.62 2.88 – j1.52 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given out- put power, voltage and frequency.

Figure 15. Large–Signal Series Equivalent Input and Output Impedance, Zin, ZOL* MOTOROLA RF DEVICE DATA MRF137

,

S

f 11 S21 S12 S22 (MHz) |S11| ± φ |S21| ± φ |S12| ± φ |S22| ± φ 2.0 0.977 –32 59.48 163 0.011 67 0.661 –36 5.0 0.919 –70 48.67 142 0.024 44 0.692 –78 10 0.852 –109 33.50 122 0.032 29 0.747 –117 20 0.817 –140 19.05 106 0.037 16 0.768 –146 30 0.814 –153 13.11 99 0.038 14 0.774 –157 40 0.811 –159 9.88 95 0.038 13 0.782 –162 50 0.812 –164 7.98 92 0.038 12 0.787 –165 60 0.813 –166 6.66 89 0.038 12 0.787 –168 70 0.815 –168 5.708 86 0.038 11 0.787 –169 80 0.816 –170 5.003 84 0.038 11 0.787 –170 90 0.817 –171 4.560 83 0.038 12 0.787 –171 100 0.817 –172 4.170 81 0.039 13 0.787 –172 110 0.818 –173 3.670 80 0.039 13 0.788 –172 120 0.820 –173 3.420 79 0.039 13 0.788 –173 130 0.821 –173 3.170 79 0.039 13 0.788 –173 140 0.822 –174 2.980 78 0.039 13 0.788 –173 150 0.823 –175 2.826 77 0.039 14 0.788 –173 160 0.824 –175 2.650 76 0.039 14 0.790 –174 170 0.825 –176 2.438 75 0.039 14 0.792 –174 180 0.827 –176 2.325 73 0.039 15 0.793 –174 190 0.829 –177 2.175 72 0.039 16 0.796 –174 200 0.831 –177 2.084 71 0.039 16 0.799 –174 225 0.836 –178 1.824 69 0.039 18 0.805 –174 250 0.846 –178 1.621 66 0.039 21 0.816 –174 275 0.853 –179 1.462 64 0.039 23 0.822 –174 300 0.853 –179 1.319 61 0.040 25 0.833 –174 325 0.856 –179 1.194 59 0.040 27 0.828 –174 350 0.857 +179 1.089 56 0.040 30 0.842 –174 375 0.861 +179 1.014 54 0.042 32 0.849 –174 400 0.865 +178 0.927 51 0.043 35 0.856 –174 425 0.875 +178 0.876 49 0.045 37 0.866 –174 450 0.881 +178 0.810 46 0.046 40 0.870 –174 475 0.886 +177 0.755 44 0.046 43 0.875 –174 500 0.887 +177 0.694 41 0.051 43 0.888 –174 525 0.888 +176 0.677 39 0.052 43 0.890 –174 550 0.896 +176 0.625 36 0.055 45 0.898 –174 575 0.907 +175 0.603 34 0.058 45 0.913 –174 600 0.910 +175 0.585 32 0.061 45 0.918 –174 625 0.910 +174 0.563 30 0.065 45 0.945 –174 650 0.920 +174 0.543 28 0.069 46 0.952 –174 675 0.938 +173 0.533 26 0.074 47 0.974 –174 700 0.943 +171 0.515 24 0.078 47 0.958 –176 725 0.934 +170 0.491 22 0.079 46 0.953 –177 750 0.940 +170 0.475 22 0.084 48 0.943 –177 775 0.953 +169 0.477 21 0.090 48 0.957 –177 800 0.959 +168 0.467 17 0.093 48 0.957 –179 Table 1. Common Source Scattering Parameters 50 Ω System VDS = 28 V, ID = 0.75 A MRF137 MOTOROLA RF DEVICE DATA, + j50 + 90° + j25 + j100 +120° + 60° + j150 +150° + 30° + j10 + j250 600 800 + j500 400 0 10 25 50 100 150 250 500 f = 50 MHz 180° 150 0.1 .08 .06 .04 .02 0° f = 50 MHz – j500 – j10 – j250 S12 –150° – 30° S11 – j150 – j25 – j100 –120° – 60° – j50 – 90°

Figure 16. S11, Input Reflection Coefficient Figure 17. S12, Reverse Transmission Coefficient

versus Frequency versus Frequency

VDS = 28 V ID = 0.75 A VDS = 28 V ID = 0.75 A

+ j50 + 90° +120° + 60° + j25 + j100 f = 50 MHz + j150 +150° + 30° + j10 + j250 + j500 180° 800 800 25 50 100 150 250 500 1086420° 0 400 150 f = 50 MHz – j500 S – j10 – j25021 –150° – 30° S22 – j150 – 60° – j25 – j100–120° – 90° – j50

Figure 18. S21, Forward Transmission Coefficient Figure 19. S22, Output Reflection Coefficient

versus Frequency versus Frequency

VDS = 28 V ID = 0.75 A VDS = 28 V ID = 0.75 A MOTOROLA RF DEVICE DATA MRF137

, DESIGN CONSIDERATIONS resistive divider network. Some special applications may The MRF137 is a RF power N–Channel enhancement require a more elaborate bias system. mode field–effect transistor (FET) designed especially for VHF power amplifier applications. Motorola RF MOS FETs GAIN CONTROL feature a vertical structure with a planar design, thus avoiding Power output of the MRF137 may be controlled from its the processing difficulties associated with V–groove vertical rated value down to zero (negative gain) by varying the dc gate power FETs. voltage. This feature facilitates the design of manual gain Motorola Application Note AN211A, FETs in Theory and control, AGC/ALC and modulation systems. (See Figure 9.) Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. AMPLIFIER DESIGN The major advantages of RF power FETs include high gain, Impedance matching networks similar to those used with bi- low noise, simple bias systems, relative immunity from ther- polar VHF transistors are suitable for MRF137. See Motorola mal runaway, and the ability to withstand severely mis- Application Note AN721, Impedance Matching Networks matched loads without suffering damage. Power output can Applied to RF Power Transistors. The higher input impedance be varied over a wide range with a low power dc control signal, of RF MOS FETs helps ease the task of broadband network thus facilitating manual gain control, ALC and modulation. design. Both small signal scattering parameters and large sig- nal impedances are provided. While the s–parameters will not DC BIAS produce an exact design solution for high power operation, The MRF137 is an enhancement mode FET and, therefore, they do yield a good first approximation. This is an additional does not conduct when drain voltage is applied. Drain current advantage of RF MOS power FETs. flows when a positive voltage is applied to the gate. See Figure RF power FETs are triode devices and, therefore, not 10 for a typical plot of drain current versus gate voltage. RF unilateral. This, coupled with the very high gain of the power FETs require forward bias for optimum performance. MRF137, yields a device capable of self oscillation. Stability The value of quiescent drain current (IDQ) is not critical for may be achieved by techniques such as drain loading, input many applications. The MRF137 was characterized at IDQ = shunt resistive loading, or output to input feedback. Two port 25 mA, which is the suggested minimum value of IDQ. For parameter stability analysis with the MRF137 s–parameters special applications such as linear amplification, IDQ may provides a useful tool for selection of loading or feedback have to be selected to optimize the critical parameters. circuitry to assure stable operation. See Motorola Application The gate is a dc open circuit and draws no current. Note AN215A for a discussion of two port network theory and Therefore, the gate bias circuit may generally be just a simple stability. MRF137 MOTOROLA RF DEVICE DATA,

PACKAGE DIMENSIONS A U NOTES: M 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q1MINCHES MILLIMETERS

4 DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14

RBB0.370 0.390 9.40 9.90

C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.6623H0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15

D S K 0.395 0.405 10.04 10.28K M 40 50 40 50

Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 STYLE 2:

J PIN 1. SOURCE

2. GATE 3. SOURCE

C H 4. DRAINE SEATING PLANE CASE 211–07 ISSUE N MOTOROLA RF DEVICE DATA MRF137

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF137 ◊ MOTOROLA RF DEVICEM RDFA1T3A7/D

]
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GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR16- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR16- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR15F- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of s
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR15- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR10- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 60 80 100 voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can wi