Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode .designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency — 55% (Typical) N–CHANNEL MOS • Small–Signal and Large–Signal Characterization BROADBAND RF POWER FET • Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 2.0 dB (Typ) at 200 m...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line N–Channel Enhancement–Mode

.designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency — 55% (Typical) N–CHANNEL MOS • Small–Signal and Large–Signal Characterization BROADBAND RF POWER

FET

• Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation D

G

S CASE 211–07, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGR 65 Vdc (RGS = 1.0 MΩ) Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 0.9 Adc Total Device Dissipation @ TC = 25°C PD 17.5 Watts Derate above 25°C 0.1 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction to Case RθJC 10 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF134, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 1.0 mAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) VGS(th) 1.0 3.5 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 100 mA) gfs 80 110 — mmhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 7.0 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance Coss — 9.7 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss — 2.3 — pF (VDS = 28 V, VGS = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure NF — 2.0 — dB (VDS = 28 Vdc, ID = 200 mA, f = 150 MHz) Common Source Power Gain Gps dB (VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA) f = 150 MHz (Fig. 1) 11 14 — f = 400 MHz (Fig. 14) — 10.6 — Drain Efficiency (Fig. 1) η 50 55 — % (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (Fig. 1) ψ (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA, No Degradation in Output Power VSWR 30:1 at all Phase Angles) L4 R3* R4 + VDD = 28 V D1 C7 C10 C11+ C8 C9 C12 – R2 L3 R5 C5 C6 C4 R1 RF OUTPUT L2 L1 RF INPUT DUT C3 C1 C2 *Bias Adjust C1, C4 — Arco 406, 15–115 pF L3 — 20 Turns, #20 AWG Enamel Wound on R5 C2 — Arco 403, 3.0–35 pF L4 — Ferroxcube VK–200 — 19/4B C3 — Arco 402, 1.5–20 pF R1 — 68 Ω, 1.0 W Thin Film C5, C6, C7, C8, C12 — 0.1 µF Erie Redcap R2 — 10 kΩ, 1/4 W C9 — 10 µF, 50 V R3 — 10 Turns, 10 kΩ Beckman Instruments 8108 C10, C11 — 680 pF Feedthru R4 — 1.8 kΩ, 1/2 W D1 — 1N5925A Motorola Zener R5 — 1.0 MΩ, 2.0 W Carbon L1 — 3 Turns, 0.310″ ID, #18 AWG Enamel, 0.2″ Long Board — G10, 62 mils L2 — 3–1/2 Turns, 0.310″ ID, #18 AWG Enamel, 0.25″ Long Figure 1. 150 MHz Test Circuit MRF134 MOTOROLA RF DEVICE DATA, 105f= 100 MHz 8 150 4 225 f = 100 MHz63225422VDD = 28V1VDD = 13.5 V IDQ = 50 mA IDQ = 50 mA000200 400 600 800 1000 0 200 400 600 800 1000 Pin, INPUT POWER (MILLWATTS) Pin, INPUT POWER (MILLWATTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

8 8 Pin = 600 mW Pin = 800 mW 300 mW66400 mW 150 mW44200 mW 2 IDQ = 50 mA 2 IDQ = 50 mA f = 100 MHz f = 150 MHz0012 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 28 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

8 8 Pin = 800 mW Pin = 800 mW66IDQ = 50 mA f = 400 MHz 400 mW 400 mW44200 mW 200 mW22IDQ = 50 mA f = 225 MHz0012 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 28 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF134

Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS), 6 500 VDD = 28V5I= 50 mA VDS = 10 VDQ 400 Pin = CONSTANT f = 400 MHz 150 MHz 100 TYPICAL DEVICE SHOWN, 1 TYPICAL DEVICE SHOWN, VGS(th) = 3.5 V VGS(th) = 3.5V00– 2 –1012345012345678VGS, GATE–SOURCE VOLTAGE (VOLTS) VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage

(Transfer Characteristics) 1.02 50 VDD = 28V1IDQ = 200 mA 0.98 100 mA 30 |S21|2 GMAX = 0.96 (1 – |S11| 2) (1 – |S22|2) 50 mA 20 0.94 0.92 VDS = 28 V ID = 100 mAdc 0.9 0 – 25 0 25 50 75 100 125 150 1 10 100 1000 TC, CASE TEMPERATURE (°C) f, FREQUENCY (MHz)

Figure 10. Gate–Source Voltage versus Figure 11. Maximum Available Gain Case Temperature versus Frequency

28 1 VGS = 0 V 0.7 24 f = 1 MHz 0.5 20 0.3 0.2 TC = 25°C 0.1 C 0.07oss 0.05 8 Ciss 0.034C0.02rss 0 0.0104812 16 20 24 2812510 20 50 70 100 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 12. Capacitance versus Voltage Figure 13. Maximum Rated Forward Biased Safe Operating Area MRF134 MOTOROLA RF DEVICE DATA

C, CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Pout, OUTPUT POWER (WATTS) ID, DRAIN CURRENT (AMPS) GMAX, MAXIMUM AVAILABLE GAIN (dB) ID, DRAIN CURRENT (MILLAMPS), L2 R3* R4 C11

V

+ DD = 28 V D1 C9 C12 C13 C14 C10 – R2 L1 C7 C8 Z4 Z5 C6 R1 RF OUTPUT C1 Z1 Z2 Z3 RF INPUT C4 C5

DUT

C2 C3 *Bias Adjust C1, C6 — 270 pF, ATC 100 mils R2 — 10 kΩ, 1/4 W C2, C3, C4, C5 — 0–20 pF Johanson R3 — 10 Turns, 10 kΩ Beckman Instruments 8108 C7, C9, C10, C14 — 0.1 µF Erie Redcap, 50 V R4 — 1.8 kΩ, 1/2 W C8 — 0.001 µF Z1 — 1.4″ x 0.166″ Microstrip C11 — 10 µF, 50 V Z2 — 1.1″ x 0.166″ Microstrip C12, C13 — 680 pF Feedthru Z3 — 0.95″ x 0.166″ Microstrip D1 — 1N5925A Motorola Zener Z4 — 2.2″ x 0.166″ Microstrip L1 — 6 Turns, 1/4″ ID, #20 AWG Enamel Z5 — 0.85″ x 0.166″ Microstrip L2 — Ferroxcube VK–200 — 19/4B Board — Glass Teflon, 62 mils R1 — 68 Ω, 1.0 W Thin Film

Figure 14. 400 MHz Test Circuit

VDD = 28 V, IDQ = 50 mA, Pout = 5.0 W 225 Zo = 50ΩfZin ZOL* MHz Ohms Ohms Zin 100 21.2 – j25.4 20.1 – j46.7 150 150 14.6 – j22.1 19.2 – j38.2 400 225 9.1 – j18.8 17.5 – j33.5 f = 100 MHz 400 6.4 – j10.8 16.9 – j26.9 68 Ω Shunt Resistor Gate–to–Ground 150 Z * ZOL* = Conjugate of the optimum load impedanceOL ZOL* = into which the device output operates ataf= 100 MHz ZOL* = given output power, voltage and frequency.

Figure 15. Large–Signal Series Equivalent Input/Output Impedances, Zin†, ZOL* MOTOROLA RF DEVICE DATA MRF134

,

S

f 11 S21 S12 S22 (MHz) |S11| ± φ |S21| ± φ |S12| ± φ |S22| ± φ 1.0 0.989 –1.0 11.27 179 0.0014 89 0.954 –1.0 2.0 0.989 –2.0 11.27 179 0.0028 89 0.954 –2.0 5.0 0.988 –5.0 11.26 176 0.0069 86 0.954 –4.0 10 0.985 –10 11.20 173 0.014 83 0.951 –9.0 20 0.977 –20 10.99 166 0.027 76 0.938 –18 30 0.965 –30 10.66 159 0.039 69 0.918 –26 40 0.950 –39 10.25 153 0.051 63 0.895 –34 50 0.931 –47 9.777 147 0.060 57 0.867 –42 60 0.912 –53 9.359 142 0.069 53 0.846 –49 70 0.892 –58 8.960 138 0.077 49 0.828 –56 80 0.874 –62 8.583 135 0.085 46 0.815 –62 90 0.855 –66 8.190 131 0.091 43 0.801 –68 100 0.833 –70 7.808 128 0.096 40 0.785 –74 110 0.827 –73 7.661 125 0.101 38 0.784 –77 120 0.821 –76 7.515 122 0.107 36 0.784 –82 130 0.814 –79 7.368 119 0.113 34 0.784 –85 140 0.808 –82 7.222 116 0.119 32 0.783 –88 150 0.802 –86 7.075 114 0.125 31 0.783 –90 160 0.788 –89 6.810 112 0.127 30 0.780 –92 170 0.774 –92 6.540 110 0.128 28 0.774 –94 180 0.763 –94 6.220 108 0.130 26 0.762 –98 190 0.751 –97 5.903 106 0.132 24 0.760 –100 200 0.740 –100 5.784 104 0.134 23 0.758 –103 225 0.719 –104 5.334 100 0.136 20 0.757 –107 250 0.704 –108 4.904 97 0.139 19 0.758 –110 275 0.687 –113 4.551 92 0.141 16 0.757 –114 300 0.673 –117 4.219 89 0.141 14 0.750 –117 325 0.668 –120 3.978 86 0.142 12 0.757 –120 350 0.669 –123 3.737 83 0.142 10 0.766 –121 375 0.662 –125 3.519 80 0.143 9.0 0.768 –123 400 0.654 –127 3.325 77 0.142 8.0 0.772 –124 425 0.650 –129 3.170 75 0.140 7.0 0.772 –125 450 0.638 –131 3.048 72 0.141 6.0 0.783 –125 475 0.614 –132 2.898 71 0.136 6.0 0.786 –126 500 0.641 –133 2.833 68 0.136 5.0 0.795 –127 525 0.638 –135 2.709 66 0.135 5.0 0.801 –127 550 0.633 –137 2.574 64 0.133 4.0 0.802 –128 575 0.628 –138 2.481 62 0.131 5.0 0.805 –128 600 0.625 –140 2.408 60 0.129 5.0 0.814 –128 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. (continued) The scattering parameters were measured on the MRF134 device alone with no external components. Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 100 mA MRF134 MOTOROLA RF DEVICE DATA, S11 Sf 21 S12 S22 (MHz) |S11| ± φ |S21| ± φ |S12| ± φ |S22| ± φ 625 0.619 –142 2.334 58 0.128 5.0 0.818 –129 650 0.617 –144 2.259 56 0.125 6.0 0.824 –130 675 0.618 –146 2.192 55 0.123 7.0 0.834 –130 700 0.619 –147 2.124 53 0.122 8.0 0.851 –131 725 0.618 –150 2.061 51 0.120 9.0 0.859 –132 750 0.614 –152 1.983 49 0.118 11 0.857 –133 775 0.609 –154 1.908 48 0.119 13 0.865 –133 800 0.562 –155 1.877 49 0.118 15 0.872 –133 825 0.587 –156 1.869 46 0.119 16 0.869 –134 850 0.593 –158 1.794 44 0.118 18 0.875 –135 875 0.597 –160 1.749 43 0.119 18 0.881 –135 900 0.598 –162 1.700 41 0.118 18 0.889 –136 925 0.592 –164 1.641 40 0.115 18 0.888 –138 950 0.588 –166 1.590 39 0.112 20 0.877 –138 975 0.586 –168 1.572 39 0.108 23 0.864 –137 1000 0.590 –171 1.551 37 0.107 28 0.863 –137 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measurd on the MRF134 device alone with no external components. Table 1. Common Source Scattering Parameters (continued) VDS = 28 V, ID = 100 mA MOTOROLA RF DEVICE DATA MRF134, + j50 + 90° + j25 + j100 +120° + 60° + j150 S +150° 12 + 30° + j10 + j250 100 150 + j500 50 f = 1000 300 .20 0 10 25 50 100 150 250 500 180° .18 .16 .14 .12 .10 .08 .06 .04 .02 MHz 500 0° f = 1000 MHz – j500 – j10 500 – j250 400 –150° – 30° 300 – j150 150 50100 – j25 – j100 –120° – 60° – j50 – 90°

Figure 16. S11, Input Reflection Coefficient Figure 17. S12, Reverse Transmission Coefficient

versus Frequency versus Frequency

VDS = 28 V ID = 100 mA VDS = 28 V ID = 100 mA

+ 90° + j50 +120° + 60° + j25 + j100 100 150 + j150 +150° 200 + 30° f = 50 MHz 300 + j10 + j250 S21 400 500 + j500 .10 180° 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0° 0 10 25 50 100 150 250 500 – j500 – j10 – j250 –150° – 30° f = 1000 MHz S22 50 – j150 500 300 200 – 60° 150 100 – j25 – j100–120° – 90° – j50

Figure 18. S21, Forward Transmission Coefficient Figure 19. S22, Output Reflection Coefficient

versus Frequency versus Frequency

VDS = 28 V ID = 100 mA VDS = 28 V ID = 100 mA MRF134 MOTOROLA RF DEVICE DATA

, DESIGN CONSIDERATIONS GAIN CONTROL The MRF134 is a RF power N–Channel enhancement Power output of the MRF134 may be controlled from its mode field–effect transistor (FET) designed especially for rated value down to zero (negative gain) by varying the dc gate VHF power amplifier and oscillator applications. Motorola RF voltage. This feature facilitates the design of manual gain MOS FETs feature a vertical structure with a planar design, control, AGC/ALC and modulation systems. (See Figure 8.) thus avoiding the processing difficulties associated with V–groove vertical power FETs. Motorola Application Note AN–211A, FETs in Theory and Practice, is suggested reading for those not familiar with the AMPLIFIER DESIGN construction and characteristics of FETs. Impedance matching networks similar to those used with The major advantages of RF power FETs include high gain, bipolar VHF transistors are suitable for MRF134. See low noise, simple bias systems, relative immunity from Motorola Application Note AN721, Impedance Matching thermal runaway, and the ability to withstand severely Networks Applied to RF Power Transistors. The higher input mismatched loads without suffering damage. Power output impedance of RF MOS FETs helps ease the task of broadband can be varied over a wide range with a low power dc control network design. Both small signal scattering parameters and signal, thus facilitating manual gain control, ALC and modula- large signal impedances are provided. While the s–parame- tion. ters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an DC BIAS additional advantage of RF MOS power FETs. The MRF134 is an enhancement mode FET and, therefore, RF power FETs are triode devices and, therefore, not does not conduct when drain voltage is applied. Drain current unilateral. This, coupled with the very high gain of the flows when a positive voltage is applied to the gate. See Figure MRF134, yields a device capable of self oscillation. Stability 9 for a typical plot of drain current versus gate voltage. RF may be achieved by techniques such as drain loading, input power FETs require forward bias for optimum performance. shunt resistive loading, or output to input feedback. The The value of quiescent drain current (IDQ) is not critical for MRF134 was characterized with a 68–ohm input shunt many applications. The MRF134 was characterized at IDQ = loading resistor. Two port parameter stability analysis with the 50 mA, which is the suggested minimum value of IDQ. For MRF134 s–parameters provides a useful–tool for selection of special applications such as linear amplification, IDQ may loading or feedback circuitry to assure stable operation. See have to be selected to optimize the critical parameters. Motorola Application Note AN215A for a discussion of two port The gate is a dc open circuit and draws no current. network theory and stability. Therefore, the gate bias circuit may generally be just a simple Input resistive loading is not feasible in low noise applica- resistive divider network. Some special applications may tions. The MRF134 noise figure data was generated in a circuit require a more elaborate bias system. with drain loading and a low loss input network. MOTOROLA RF DEVICE DATA MRF134,

PACKAGE DIMENSIONS A U NOTES: M 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q1MINCHES MILLIMETERS

4 DIM MIN MAX MIN MAX A 0.960 0.990 24.39 25.14

RBB0.370 0.390 9.40 9.90

C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.6623H0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15

D S K 0.395 0.405 10.04 10.28K M 40 50 40 50

Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 STYLE 2:

J PIN 1. SOURCE

2. GATE 3. SOURCE

C H 4. DRAINE SEATING PLANE CASE 211–07 ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF134 ◊ MOTOROLA RF DEVICEM RDFA1T3A4/D

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GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 60CT 80CT 100CT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR16- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR16- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR15F- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of s
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR15- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR10- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 60 80 100 voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can wi
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b 8.0 0.1 Al 2 O3 0.125 4.0 2.4 3.4 max max 3.0 BeO 3 seating 5.30 1.3 plane max 1.0 20.6 max 1.8 max seating plane 3.2 4 2.9 0.4 M min 1 4.0 min130.75 3.2 5.2 5.35 2.
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09 4.0 handbook, full pagewidth 5.0 3.8 A 4.8 S 0.1 S 6.2 5.8 0.7 0.3850.7 1.45 0.6 0.25 1.75 1.25 0.19 1.35140.25 1.0 o pin