Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR MICROWAVE POWER TRANSISTOR • Characterized with 10 µs, 10% Duty Cycle Pulses NPN SILICON • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matc...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 –1150 MHz • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR MICROWAVE POWER

TRANSISTOR

• Characterized with 10 µs, 10% Duty Cycle Pulses NPN SILICON • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Hermetically Sealed Package • Recommended Driver for MRF10500 Transistor or a Pair of MRF10350 Transistors CASE 376C–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 8.8 Adc Total Device Dissipation @ TC = 25°C (1), (2) PD 438 Watts Derate above 25°C 2.5 W/°C Storage Temperature Range Tstg – 65 to + 200 °C Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) RθJC 0.4 °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 10 µs, 10%.) REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF10070,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO — — 25 mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — —

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain GPB 9.0 10 — dB Collector Efficiency η 40 — — % Load Mismatch ψ No Degradation in Output Power (VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz, Before or After Test Load VSWR = 10:1 All Phase Angles) + + C4 – Z6 C2 C3 L1 C1 Z2 D.U.T. Z11 Z1 Z3 Z4 Z10 Z5 Z7 Z9Z8 Z12 Z13 C1 — 82 pF 100 mil Chip Capacitor Z1 – Z13 — Microstrip, see details below C2 — 82 pF 100 mil Chip Capacitor Board Material — 0.030″ Glass Teflon; 2 oz. C3 — 0.1 µF Cu clad; both sides; ∈r = 2.55 C4 — 100 µF/100 Vdc Electrolytic L1 — 3 turns #18 AWG, 1/8″ ID, 0.18″ Long 79 583 791 300300 168 203 203 50 79595 681 374 536 459 264 283 283159 7979 100 226 578 865 266 265 352 79 2201113 1.000

Figure 1. Test Circuit MRF10070 MOTOROLA RF DEVICE DATA

, VCC = 50 V 40 f = 1090 MHz PULSE = 10 µs, 10% DF2345678910 11 12 13 14 15 Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

1050 1090 1025 1125 Zin f = 1150 MHz Zo = 10 Ω ZOL* 1125 1050 f = 1150 MHz Pout = 70 W Pk VCC = 50VfZIN ZOL* (ZOUT) MHz OHMS OHMS 1025 3.3 + j5.8 14.3 + j5.6 ZOL* is the conjugate of the optimum load1050 3.6 + j6.5 13.3 – j1.0 impedance into which the device operates at a 1090 4.0 + j6.9 11.3 – j2.1 given output power voltage and frequency. 1125 4.5 + j6.9 10.4 – j2.5 1150 5.0 + j6.9 10.2 – j2.6

Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10070

Pout, OUTPUT POWER (WATTS),

PACKAGE DIMENSIONS

NOTES:

GQ2PL 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

0.25 (0.010) MTAMBM2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX

R –B– A 0.890 0.910 22.61 23.11

B 0.370 0.400 9.40 10.16

K C 0.190 0.210 4.83 5.33D 0.140 0.160 3.56 4.06

E 0.055 0.065 1.40 1.65

D 2 PL F 0.003 0.006 0.08 0.15

0.25 (0.010) MTAMBMG0.650 BSC 16.51 BSCH 0.110 0.130 2.80 3.30

F K 0.180 0.220 4.57 5.592 PL H N 0.390 0.410 9.91 10.41E N 0.25 (0.010) MTAMBMQ0.115 0.135 2.93 3.42

R 0.390 0.140 9.91 10.41 –T– SEATING STYLE 1:PLANE –A– PIN 1. COLLECTORC 2. EMITTER 3. BASE

CASE 376C–01 ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF10070 ◊ MOTOROLA RF DEVIMCREF D10A0T7A0/D

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