Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB Min (9.5 dB Typ) 960–1215 MHz • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR MICROWAVE POWER TRANSISTOR • Hermetically Sealed Industry Standard Package NPN SILICON • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration •...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB Min (9.5 dB Typ) 960–1215 MHz • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR MICROWAVE POWER

TRANSISTOR

• Hermetically Sealed Industry Standard Package NPN SILICON • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation CASE 376B–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage (1) VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous (1) IC 3.0 Adc Total Device Dissipation @ TC = 25°C (1), (2) PD 110 Watts Derate above 25°C 0.625 mW/°C Storage Temperature Range Tstg – 65 to + 200 °C Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) RθJC 1.6 °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 23% duty cycle) REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF10031, ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ICBO — — 2.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) hFE 20 — — — FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%) Common–Base Amplifier Power Gain GPB 9.0 9.5 — dB Collector Efficiency η 40 45 — % Load Mismatch ψ No Degradation in Output Power (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz, VSWR = 10:1 All Phase Angles) + + C2 C3 C4 36 Vdc– Z5 L1 RF INPUT RF OUTPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 C1 D.U.T. C1 — 75 pF 100 Mil Chip Capacitor Z1–Z9 — Microstrip, See Details C2 — 39 pF 100 Mil Chip Capacitor Board Material — Teflon, Glass Laminate C3 — 0.1 µF Dielectric Thickness = 0.030″ C4 — 1000 µF, 50 Vdc, Electrolytic εr = 2.55, 2 Oz. Copper L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long 1.020 BROADBAND FIXTURE .218 .628 2.138 .223 .215 1.350 .118 .354 .389 .083 .733 .113 .780 .669 .100 .083 .083 1.210 .400 .128 Figure 1. Test Circuit MRF10031 MOTOROLA RF DEVICE DATA 2.050, 80 f = 960 MHz VCC = 36 VOLTS12345678910 PIN, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

f = 960 MHz Zin 1155 Zo = 10 Ω 1090 Z 1025 OL * f = 960 MHz Pout = 30 W Pk VCC = 36VfZin ZOL* MHz Ohms Ohms 960 2.05 + j5.24 22.9 – j2.35 1025 2.67 + j6.34 2.55 – j1.35 1090 24.0 + j7.14 2.52 – j0.95 1155 25.5 + j6.24 22.6 – j0.65 1220 25.7 + j4.34 22.8 – j0.35 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage, and frequency.

Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10031

POUT, OUTPUT POWER (WATTS),

PACKAGE DIMENSIONS GQ2PL NOTES:

0.25 (0.010) MTAMBM1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

R –B– INCHES MILLIMETERS

DIM MIN MAX MIN MAX A 0.890 0.910 22.61 23.11

K B 0.370 0.400 9.40 10.16

C 0.145 0.160 3.69 4.06

D 2 PL D 0.140 0.160 3.56 4.06

E 0.055 0.065 1.40 1.65 0.25 (0.010) MTAMBMF0.003 0.006 0.08 0.15 G 0.650 BSC 16.51 BSC H 0.110 0.130 2.80 3.30 K 0.180 0.220 4.57 5.59

F N 0.390 0.410 9.91 10.412 PL HNQ0.115 0.135 2.93 3.42E 0.25 (0.010) MTAMBMR0.390 0.140 9.91 10.41

STYLE 1: –T– SEATING PIN 1. COLLECTORPLANE 2. EMITTER –A– C 3. BASE

CASE 376B–02 ISSUE B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF10031 ◊ MOTOROLA RF DEVIMCREF D10A0T3A1/D

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