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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line .designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2.0 W (PEAK), 960–1215 MHz MICROWAVE POWER • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR TRANSISTORS • Industry Standard Package NPN SILICON • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Bro...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line

.designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2.0 W (PEAK), 960–1215 MHz MICROWAVE POWER • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR TRANSISTORS • Industry Standard Package NPN SILICON • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit CASE 332–04, STYLE 1 Collector–Emitter Voltage VCEO 20 Vdc MRF1002MA Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 250 mAdc Total Device Dissipation @ TC = 25°C (1) PD 7.0 Watts Derate above 25°C 40 mW/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit CASE 332A–03, STYLE 1 MRF1002MB Thermal Resistance, Junction to Case (2) RθJC 25 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CES 50 — — Vdc (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage V(BR)CBO 50 — — Vdc (IC = 5.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 3.5 — — Vdc (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current ICBO — — 0.5 mAdc (VCB = 35 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain hFE 10 — 100 — (IC = 100 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV6MMOotoTrOolaR, OIncL. A19 R94F DEVICE DATA MRF1002MA MRF1002MB, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance Cob — 2.5 5.0 pF (VCB = 35 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) Common–Base Amplifier Power Gain GPB 10 12 — dB (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) Collector Efficiency η 40 45 — dB (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) Load Mismatch ψ (VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz, No Degradation in Power Output VSWR = 10:1 All Phase Angles) + 35 Vdc + – C2 C3 C4 L1 Z2 Z5 Z9 Z12

DUT

RF C1 RF INPUT Z1 Z4 Z7 Z8 Z11 Z14 OUTPUT Z3 Z6 Z10 Z13 C1, C3 — 220 pF Chip Capacitor, 100 mil ATC C2 — 20 µF/50 Vdc Electrolytic C4 — 0.1 µF Erie Redcap L1, L2 — 2 Turns #18 AWG, 1/8″ ID Z1–Z14 — Distributed Microstrip Elements, See Photomaster Board Material — 0.031″ Thick Teflon–Fiberglass, Board Material — εr = 2.56 Figure 1. 1090 MHz Test Circuit MRF1002MA MRF1002MB MOTOROLA RF DEVICE DATA, 33f= 0.96 GHz Pin = 200 mW pk 2.5 2.5 1.09 GHz 160 mW pk221.215 GHz 120 mW pk 1.5 1.5 VCC = 35Vt1P= 10 µs D = 1% 1 VCC = 35 V tP = 10 µs 80 mW pk D = 1% 0.5 0.5 0 40 80 120 160 200 960 1090 1215 Pin, INPUT POWER (mW pk) f, FREQUENCY (MHz)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

2 15 Pin = 200 mW pk tP = 10 µs 125 mW pk Pout = 2 W pk D = 1% 14 VCC = 35 V 1.5 f = 1090 MHz tP = 10 µs 100 mW pk D = 1% 1 75 mW pk 0.5 0 100510 15 20 25 30 35 40 960 1090 1215 VCC, SUPPLY VOLTAGE (V) f, FREQUENCY (MHz)

Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency

+ j50 + j25 + j100 Zin + j1501215 + j10 1090 + j250 f = 960 MHz VCC = 35 Vdc, + j500 tP = 10 µs, D = 1.0% 0 10 25 50 100 150 250 500 ZOL* ZOL* f Zin Ohms Ohms ZOL* (Pin = 0.2 W pk) MHz Ohms Pout = 2.0 W pk Pin = 0.2 W pk – j500 1090 960 15.5 + j16.5 20 + j32.5 25 + j21 f = 960 MHz 1215 1090 15 + j20 25 + j34 31 + j26 – j10 – j2501090 1215 14 + j27 33.5 + j42.5 37 + j32.5 960 1215 ZOL* = Conjugate of the optimum load impedance into which ZOL* (P – j150 out = 2 W pk) ZOL* = the device output operates at a given output power, ZOL* = voltage, and frequency. – j25 – j100 COORDINATES IN OHMS – j50

Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB

Pout, OUTPUT POWER (W pk) Pout, OUTPUT POWER (W pk) GPB, POWER GAIN (dB) Pout, OUTPUT POWER (W pk), Pout = 2 W pk VCC = 35 V tP = 1 ms D = 10% f = 1090 MHz

Figure 7. Typical Long Pulse Performance MRF1002MA MRF1002MB MOTOROLA RF DEVICE DATA

,

PACKAGE DIMENSIONS L

NOTES:

M 1. DIMENSION K APPLIES TWO PLACES.

4 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1973.

K13DMILLIMETERS INCHES

DIM MIN MAX MIN MAX2A6.86 7.62 0.270 0.300 B 6.10 6.60 0.240 0.260 C 16.26 16.76 0.640 0.660 D 4.95 5.21 0.195 0.205

ANE1.40 1.65 0.055 0.065 J F 2.67 4.32 0.105 0.170 H H 1.40 1.65 0.055 0.065 F J 0.08 0.18 0.003 0.007

K 15.24 ––– 0.600 –––

C –T–U L 2.41 2.67 0.095 0.105

SEATING M 45 NOM 45 NOM 8–32 UNC 2A PLANE N 4.97 6.22 0.180 0.245 STYLE 1: U 2.92 3.68 0.115 0.145 PIN 1. BASE

E 2. EMITTER

–B– 3. BASE4. COLLECTOR 0.76 (0.030) MTBM

CASE 332–04 ISSUE D MRF1002MA F

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS

K13DDIM MIN MAX MIN MAX

A 0.270 0.290 6.86 7.36 C 0.115 0.135 2.93 3.422D0.195 0.205 4.96 5.20 F 0.095 0.105 2.42 2.66 H 0.050 0.070 1.27 1.77 J 0.003 0.007 0.08 0.17 K 0.600 ––– 15.24 –––

A H J STYLE 1:

PIN 1. BASE

C 2. EMITTER

SEATING 3. BASE PLANE 4. COLLECTOR

CASE 332A–03 ISSUE D MRF1002MB MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF1002MA MRF1002MB ◊ MOTOROLA RF DEMVRICFE10 D02AMTAA/D

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