Download: Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line

Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output Power — 50 Watts 7.0 dB, 500 – 1000 MHz Power Gain — 7 dB (Min), Class AB 50 W • Built–In Matching Network for Broadband Operation BROADBAND UHF POWER TRANSISTOR • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Hermetic Package for Military/Space Applications CASE 391–03...
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Order this document SEMICONDUCTOR TECHNICAL DATA by MRA0510–50H/D The RF Line

Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics: Output Power — 50 Watts 7.0 dB, 500 – 1000 MHz Power Gain — 7 dB (Min), Class AB 50 W • Built–In Matching Network for Broadband Operation BROADBAND UHF POWER TRANSISTOR • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Hermetic Package for Military/Space Applications CASE 391–03, STYLE 1 (HLP–42) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Total Device Dissipation @ TC = 25°C PD 125 Watts Derate above 25°C 0.715 W/°C Operating Junction Temperature TJ 200 °C Storage Temperature Range Tstg –65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, RF, Junction to Case (TC = 70°C) RθJC 1.4 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0) V(BR)CES 60 – – Vdc Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) V(BR)CBO 60 – – Vdc Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V(BR)EBO 4 – – Vdc Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω) V(BR)CER 50 – – Vdc Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO – – 25 mAdc (1) Each transistor chip measured separately. (continued) REV1MMOotoTrOolaR, OIncL. A19 R97F DEVICE DATA MRA0510–50H,

ELECTRICAL CHARACTERISTICS — continued

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1 A, VCE = 5 V) hFE 20 – 80 –

DYNAMIC CHARACTERISTICS (1)

Output Capacitance (VCB = 28 V, IE = 0, f = 1 MHz) Cob – – 24 pF

FUNCTIONAL TESTS (2)

Common–Emitter Amplifier Power Gain GPE1 7 – – dB (VCE = 28 V, Pout = 50 W, f = 1 GHz, ICQ = 2 x 120 mA) Load Mismatch ψ (VCE = 28 V, ICQ = 2 x 120 mA, Pout = 50 W, f = 1 GHz, No Degradation in Output Power Load VSWR = 5:1, All Phase Angles) Broadband Power Gain GPE2 6.5 – – dB (VCE = 28 V, Pout = 45 W, f = 500 mHz and 1 GHz, ICQ = 2 x 120 mA) (1) Each transistor chip measured separately. (2) Both transistor chips operating in push–pull amplifier.

TYPICAL CHARACTERISTICS

12 6.0 VCC = 28 V 10 Po = 50 W JX 5.0 ONE SIDE ONLY R 4.0 VCC = 28 V8.0 Po = 50 W 3.0 ONE SIDE ONLY 6.0 2.0 4.0 1.0 R JX 2.0 0 –1.0 500 600 700 800 900 1000 500 600 700 800 900 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 1. Input Impedance versus Frequency Figure 2. Output Impedance versus Frequency MRA0510–50H MOTOROLA RF DEVICE DATA

Zin, SERIES INPUT IMPEDANCE (OHMS) ZOL*, SERIES OUTPUT IMPEDANCE (OHMS),

PACKAGE DIMENSIONS

–A– NOTES:

U 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.895 0.905 22.73 22.99 B 0.380 0.390 9.65 9.91

S –B– V C 0.172 0.208 4.37 5.28

D 0.075 0.085 1.91 2.165E0.055 0.065 1.40 1.65 G 0.075 0.085 1.91 2.16 H 0.115 0.125 2.92 3.1834J0.003 0.006 0.08 0.15 N 0.393 0.403 9.98 10.24

Q 2 PLGQ0.123 0.133 3.13 3.38

S 0.705 0.745 17.91 18.92 0.25 (0.010) MTAMBM

D U 0.650 BSC 16.51 BSC E V 0.393 0.403 9.98 10.24 J N

STYLE 1:

C PIN 1. COLLECTOR H 2. COLLECTOR

3. BASE –T– SEATING PLANE 4. BASE 5. EMITTER

CASE 391–03 ISSUE C MOTOROLA RF DEVICE DATA MRA0510–50H

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax INTERNET: http://motorola.com/sps

MRA0510–50H ◊ MOTOROLA RF DMERVAI0C5E1 0D–A50THA/D

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