Download: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09

DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test Total Quality Management results are used for quality feedback and corrective Philips Semiconductors is a Quality Company, renowned actions. The inspection and test requirements are for the high quality of our products and service. We keep detailed in the general quality specifications. alive this tradition by constantly aiming towards one •...
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DISCRETE SEMICONDUCTORS

DATA SHEET General RF Power Modules and Transistors for Mobile Phones

1996 Jun 06 File under Discrete Semiconductors, SC09, QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test Total Quality Management results are used for quality feedback and corrective Philips Semiconductors is a Quality Company, renowned actions. The inspection and test requirements are for the high quality of our products and service. We keep detailed in the general quality specifications. alive this tradition by constantly aiming towards one • Periodic inspections to monitor and measure the ultimate standard, that of zero defects. This aim is guided conformance of products. by our Total Quality Management (TQM) system, the basis of which is described in the following paragraphs. Product reliability QUALITY ASSURANCE With the increasing complexity of Original Equipment Manufacturer (OEM) equipment, component reliability Based on ISO 9000 standards, customer standards such must be extremely high. Our research laboratories and as Ford TQE and IBM MDQ. Our factories are certified to development departments study the failure mechanisms of ISO 9000 by external inspectorates. semiconductors. Their studies result in design rules and process optimization for the highest built-in product PARTNERSHIPS WITH CUSTOMERS reliability. Highly accelerated tests are applied to the PPM co-operations, design-in agreements, ship-to-stock, products reliability evaluation. Rejects from reliability tests just-in-time and self-qualification programmes, and and from customer complaints are submitted to failure application support. analysis, to result in corrective action. PARTNERSHIPS WITH SUPPLIERS Customer responses Ship-to-stock, statistical process control and ISO 9000 Our quality improvement depends on joint action with our audits. customer. We need our customer’s inputs and we invite constructive comments on all aspects of our performance. Q Please contact our local sales representative.UALITY IMPROVEMENT PROGRAMME Continuous process and system improvement, design Recognition improvement, complete use of statistical process control, realization of our final objective of zero defects, and The high quality of our products and services is logistics improvement by ship-to-stock and just-in-time demonstrated by many Quality Awards granted by major agreements. customers and international organizations. Advanced quality planning PRO ELECTRON TYPE NUMBERING SYSTEM During the design and development of new products and Basic type number processes, quality is built-in by advanced quality planning. Through failure-mode-and-effect analysis the critical This type designation code applies to discrete parameters are detected and measures taken to ensure semiconductor devices (not integrated circuits), multiples good performance on these parameters. The capability of of such devices, semiconductor chips and Darlington process steps is also planned in this phase. transistors. Product conformance FIRST LETTER The assurance of product conformance is an integral part The first letter gives information about the material for the of our quality assurance (QA) practice. This is achieved by: active part of the device. • Incoming material management through partnerships A Germanium or other material with a band gap of with suppliers. 0.6 to 1 eV • In-line quality assurance to monitor process B Silicon or other material with a band gap of reproducibility during manufacture and initiate any 1 to 1.3 eV necessary corrective action. Critical process steps are C Gallium arsenide (GaAs) or other material with a 100% under statistical process control. band gap of 1.3 eV or more 1996 Jun 06 2, R Compound materials, e.g. cadmium sulphide. Version letter A letter may be added to the basic type number to indicate SECOND LETTER minor electrical or mechanical variants of the basic type. The second letter indicates the function for which the device is primarily designed. The same letter can be used for multi-chip devices with similar elements. RATING SYSTEMS In the following list low power types are defined by The rating systems described are those recommended by R > 15 K/W and power types by R ≤ 15 K/W. the IEC in its publication number 134.th j-mb th j-mb A Diode; signal, low power Definitions of terms used B Diode; variable capacitance ELECTRONIC DEVICE C Transistor; low power, audio frequency An electronic tube or valve, transistor or other D Transistor; power, audio frequency semiconductor device. This definition excludes inductors, E Diode; tunnel capacitors, resistors and similar components. F Transistor; low power, high frequency G Multiple of dissimilar devices/miscellaneous CHARACTERISTIC devices; e.g. oscillators. Also with special third A characteristic is an inherent and measurable property of letter; see under Section “Serial number” a device. Such a property may be electrical, mechanical, H Diode; magnetic sensitive thermal, hydraulic, electro-magnetic or nuclear, and can be expressed as a value for stated or recognized L Transistor; power, high frequency conditions. A characteristic may also be a set of related N Photocoupler values, usually shown in graphical form. P Radiation detector; e.g. high sensitivity photo-transistor; with special third letter BOGEY ELECTRONIC DEVICE Q Radiation generator; e.g. LED, laser; with special An electronic device whose characteristics have the third letter published nominal values for the type. A bogey electronic R Control or switching device; e.g. thyristor, low device for any particular application can be obtained by power; with special third letter considering only those characteristics that are directly S Transistor; low power, switching related to the application. T Control or switching device; e.g. thyristor, low RATING power; with special third letter A value that establishes either a limiting capability oraUTransistor; power, switching limiting condition for an electronic device. It is determined W Surface acoustic wave device for specified values of environment and operation, and X Diode; multiplier, e.g. varactor, step recovery may be stated in any suitable terms. Limiting conditions Y Diode; rectifying, booster may be either maxima or minima. Z Diode; voltage reference or regulator, transient RATING SYSTEM suppressor diode; with special third letter. The set of principles upon which ratings are established SERIAL NUMBER and which determine their interpretation. The rating system indicates the division of responsibility between the The number comprises three figures running from device manufacturer and the circuit designer, with the 100 to 999 for devices primarily intended for consumer object of ensuring that the working conditions do not equipment, or one letter (Z, Y, X, etc.) and two figures exceed the ratings. running from 10 to 99 for devices primarily intended for industrial or professional equipment.(1) Absolute maximum rating system (1) When the supply of these serial numbers is exhausted, the Absolute maximum ratings are limiting values of operating serial number may be expanded to three figures for industrial types and four figures for consumer types. and environmental conditions applicable to any electronic 1996 Jun 06 3, device of a specified type, as defined by its published data, applications, taking responsibility for normal changes in which should not be exceeded under the worst probable operating conditions due to rated supply voltage variation, conditions. equipment component variation, equipment control adjustment, load variation, signal variation, environmental These values are chosen by the device manufacturer to conditions, and variations in the characteristics of all provide acceptable serviceability of the device, taking no electronic devices. responsibility for equipment variations, environmental variations, and the effects of changes in operating The equipment manufacturer should design so that, conditions due to variations in the characteristics of the initially, no design centre value for the intended service is device under consideration and of all other electronic exceeded with a bogey electronic device in equipment devices in the equipment. operating at the stated normal supply voltage. The equipment manufacturer should design so that, initially and throughout the life of the device, no absolute LETTER SYMBOLS maximum value for the intended service is exceeded with any device, under the worst probable operating conditions The letter symbols for transistors detailed in this section with respect to supply voltage variation, equipment are based on IEC publication number 148. component variation, equipment control adjustment, load variations, signal variation, environmental conditions, and Basic letters variations in characteristics of the device under In the representation of currents, voltages and powers, consideration and of all other electronic devices in the lower-case letter symbols are used to indicate all equipment. instantaneous values that vary with time. All other values are represented by upper-case letters. Design maximum rating system Electrical parameters(1) of external circuits and of circuits Design maximum ratings are limiting values of operating in which the device forms only a part are represented by and environmental conditions applicable to a bogey upper-case letters. Lower-case letters are used for the electronic device of a specified type as defined by its representation of electrical parameters inherent in the published data, and should not be exceeded under the device. Inductances and capacitances are always worst probable conditions. represented by upper-case letters. These values are chosen by the device manufacturer to The following is a list of basic letter symbols used with provide acceptable serviceability of the device, taking semiconductor devices: responsibility for the effects of changes in operating B, b Susceptance (imaginary part of an admittance) conditions due to variations in the characteristics of the electronic device under consideration. C Capacitance G, g Conductance (real part of an admittance) The equipment manufacturer should design so that, initially and throughout the life of the device, no design H, h Hybrid parameter maximum value for the intended service is exceeded with I, i Current a bogey electronic device, under the worst probable L Inductance operating conditions with respect to supply voltage variation, equipment component variation, variation in P, p Power characteristics of all other devices in the equipment, R, r Resistance (real part of an impedance) equipment control adjustment, load variation, signal V, v Voltage variation and environmental conditions. X, x Reactance (imaginary part of an impedance) Design centre rating system Y, y Admittance Design centre ratings are limiting values of operating and Z, z Impedance. environmental conditions applicable to a bogey electronic device of a specified type as defined by its published data, and should not be exceeded under normal conditions. (1) For the purpose of this publication, the term ‘electrical parameters’ applies to four-pole matrix parameters, elements These values are chosen by the device manufacturer to of electrical equivalent circuits, electrical impedances and provide acceptable serviceability of the device in average admittances, inductances and capacitances. 1996 Jun 06 4, Subscripts repetitive, recovery. As third subscript: with a specified resistance between the terminal Upper-case subscripts are used for the indication of: not mentioned and the reference terminal • Continuous (DC) values (without signal), e.g. IB (OV) Overload • Instantaneous total values, e.g. iB P, p Pulse • Average total values, e.g. IB(AV) Q, q Turn-off • Peak total values, e.g. IBM R, r As first subscript: reverse (or reverse • Root-mean-square total values, e.g. IB(RMS). transfer), rise. As second subscript: Lower-case subscripts are used for the indication of values repetitive, recovery. As third subscript: with a applying to the varying component alone: specified resistance between the terminal not mentioned and the reference terminal • Instantaneous values, e.g. ib (RMS), (rms) Root-mean-square value • Root-mean-square values, e.g. Ib(rms) S, s As first subscript: series, source, storage, • Peak values, e.g. Ibm stray, switching. As second subscript: surge • Average values, e.g. Ib(av). (non-repetitive). As third subscript: short The following is a list of subscripts used with basic letter circuit between the terminal not mentioned symbols for semiconductor devices: and the reference terminal A, a anode stg Storage amb ambient th Thermal (AV), (av) average value TO Threshold B, b base tot Total (BO) breakover W Working (BR) breakdown X, x Specified circuit case case Z, z Reference or regulator (zener) C, c collector 1 Input (four-pole matrix) C controllable 2 Output (four-pole matrix). D, d drain Applications and examples E, e emitter TRANSISTOR CURRENTS F, f fall, forward (or forward transfer) The first subscript indicates the terminal carrying the G, g gate current (conventional current flow from the external circuit H holding into the terminal is positive). h heatsink Examples: IB, iB, ib, ibm. I, i input j-a junction to ambient TRANSISTOR VOLTAGES j-mb junction to mounting base A voltage is indicated by the first two subscripts: the first K, k cathode identifies the terminal at which the voltage is measured and the second the reference terminal or the circuit node. L load The second subscript may be omitted when there is no M, m peak value possibility of confusion. (min) minimum Examples: VBE, vBE, vbe, Vbem. (max) maximum mb mounting base SUPPLY VOLTAGES OR CURRENTS O, o As first subscript: reverse (or reverse Supply voltages or supply currents are indicated by transfer), rise. As second subscript: repeating the appropriate terminal subscript. 1996 Jun 06 5, Examples: VCC; IEE. Zi = Ri + jXi Small-signal value of the input impedance. A reference terminal is indicated by a third subscript. If more than one subscript is used, subscripts for which a choice of style is allowed, the subscripts chosen are all Example: VCCE. upper-case or all lower-case. DEVICES WITH MORE THAN ONE TERMINAL OF THE SAME KIND Examples: hFE, yRE, hfe. If a device has more than one terminal of the same kind, FOUR-POLE MATRIX PARAMETERS the subscript is formed by the appropriate letter for the terminal, followed by a number. Hyphens may be used to The first letter subscript (or double numeric subscript) avoid confusion in multiple subscripts. indicates input, output, forward transfer or reverse transfer. Examples: I Continuous (DC) current flowing into the Examples: hi (or h11), ho (or h22), hf (or h21), hr (or h12).B2 second base terminal A further subscript is used for the identification of the circuit VB2-E Continuous (DC) voltage between the configuration. When no confusion is possible, this further terminals of second base and emitter. subscript may be omitted. Examples: hfe (or h21e), hFE (or h21E). MULTIPLE DEVICES For multiple unit devices, the subscripts are modified by a DISTINCTION BETWEEN REAL AND IMAGINARY PARTS number preceding the letter subscript. Hyphens may be If it is necessary to distinguish between real and imaginary used to avoid confusion in multiple subscripts. parts of electrical parameters, no additional subscripts are Examples: used. If basic symbols for the real and imaginary parts I2C Continuous (DC) current flowing into the exist, these may be used. collector terminal of the second unit Examples: Zi = Ri + jXi, yfe = gfe + jbfe. V1C-2C Continuous (DC) voltage between the If such symbols do not exist or are not suitable, the collector terminals of the first and second notation shown in the following examples is used. units. Examples: ELECTRICAL PARAMETERS Re (hib) etc. for the real part of hib The upper-case variant of a subscript is used for the Im (hib) etc. for the imaginary part of hib. designation of static (DC) values. Examples: hFE Static value of forward current transfer in common-emitter configuration (DC current gain) RE DC value of the external emitter resistance. The static value is the slope of the line from the origin to the operating point on the appropriate characteristic curve, i.e. the quotient of the appropriate electrical quantities at the operating point. The lower-case variant of a subscript is used for the designation of small-signal values. Examples: hfe Small-signal value of the short-circuit forward current transfer ratio in common-emitter configuration 1996 Jun 06 6, TAPE AND REEL PACKING Packing types Table 1 Packing quantities per reel 12NC TAPE WIDTH REEL SIZE QUANTITY PER PACKAGE (note 1) (mm) (mm) REEL ends with: SOT96 (SO8) 12 330 2500 ...118 SOT223 12 180 3000 ...115 SOT321A 40 330 600 ...135 SOT321B 40 330 600 ...135 Note 1. 12NC is the Philips twelve-digit ordering code.

K

K0 A0 T1

G

θ W1 B1 B0 D1

W F E

D0 P P2δδP(1) MBE546 - 10 T direction of unreeling For dimensions see Table 2. (1) Tolerance over any 10 pitches: ±0.2 mm. Fig.1 Specification for 12 mm tape (SOT96). 1996 Jun 06 7,

K

K0 A0 T1

G

θ W1 B1 B0 D1

W F E

D0 P P2δδP(1) MEA467 - 10 T direction of unreeling For dimensions see Table 2. (1) Tolerance over any 10 pitches: ±0.2 mm. Fig.2 Specification for 12 mm tape (SOT223). 1996 Jun 06 8, Table 2 Tape dimensions (in mm) DIMENSION (Figs 1 and 2) 12 mm CARRIER TAPE TOLERANCE Overall dimensions W 12.0 ±0.2 K <2.4 − G >0.75 − Sprocket holes; note 1 D0 1.5 +0.1/−0 E 1.75 ±0.1 P0 4.0 ±0.1 Relative placement compartment P2 2.0 ±0.1 F 5.5 ±0.05 Compartment A0 Compartment dimensions depend on package size. Maximum B0 clearance between device and compartment is 0.3 mm; the B1 minimum clearance ensures that the device is not totally restrained K within the compartment.0 D1 >1.5 − P 8.0 ±0.1 θ <15° − Cover tape; note 2 W1 <9.5 − T1 <0.1 − Carrier tape W 12.0 ±0.2 T <0.2 − δ <0.3 − Notes 1. Tolerance over any 10 pitches ±0.2 mm. 2. The cover tape shall not overlap the tape or sprocket holes. 1996 Jun 06 9, handbook, full pagewidth4A1.5 ± 0.1 ± 0.1 2 0.25 ± 0.05 1.75 44 3.5 + 0.5 ± 0.3 22.30 26 40.4 ± 0.2 0 ± 0.1 20 MBH494

A

direction of unreeling Fig.3 Specification for 40 mm tape (SOT321A). 1996 Jun 06 10, handbook, full pagewidth3A1.5 ± 0.1 ± 0.1 2 0.25 ± 0.05 1.75 44 3.5 + 0.5 ± 0.3 22.30 26 40.4 ± 0.2 0 ± 0.1 20 MBH498

A

direction of unreeling Fig.4 Specification for 40 mm tape (SOT321B). 1996 Jun 06 11, t handbook, full pagewidth

W O U E

CBAtrailer leader MEA942 fixing tape For dimensions see Table 3. Fig.5 Reel specification. Table 3 Reel dimensions (in mm) DIMENSION 12 mm CARRIER 40 mm CARRIER TOLERANCE TOLERANCE (see Fig.5) TAPE TAPE Flange A 180(1) or 330 ±0.5 330 − t 1.5 +0.5/−0.1 3 − W 12.4 18.0+0.2 44.4 +2/−0 Hub B 62 ±1.5 101 ±1.5 C 12.75 +0.15/−0.2 13 ±1.5 Key slotE2±0.2 1.5 − U 4 ±0.5 3.6 − O 120° − 120° − Note 1. Large reel diameter depends on individual package (286 or 350). 1996 Jun 06 12, MOUNTING AND SOLDERING Pin transfer Introduction A pin picks up a droplet of solder paste from a reservoir and transfers it to the surface of the substrate or This chapter gives an overview of the mounting and component. A multi-pin arrangement with pins positioned soldering methods which can be applied to the SMD to match the substrate is possible and this speeds up the transistors, SMD modules, and the Flange mounted process time. modules, all of which are present in this handbook. REFLOW TECHNIQUES Surface mounting techniques Thermal conduction For SMD transistors reflow soldering is recommended. For the SMD modules only reflow soldering is allowed. The prepared substrates are carried on a conveyor belt, Surface mounting techniques are complex and this first through a preheating stage and then through a chapter provides only a simplified overview of the subject. soldering stage. Heat is transferred to the substrate by conduction through the belt. Figure 6 shows a theoretical Reflow soldering time/temperature relationship for thermal conduction reflow soldering. This method is particularly suited to thick SOLDER PASTE film substrates and is often combined with infrared Most reflow soldering techniques utilize a paste that is a heating. mixture of flux and solder. The solder paste is applied to the substrate before the components are placed. It is of sufficient viscosity to hold the components in place and, therefore, an application of adhesive is not required. Drying of the solder paste by preheating increases the viscosity and prevents any tendency for the components to become displaced during the soldering process. MBC938 Preheating also minimizes thermal shock and drives off 250 flux solvents. T( o C) Screen printing This is the best high-volume production method of solder paste application. An emulsion-coated, fine mesh screen 100 with apertures etched in the emulsion to coincide with the surfaces to be soldered is placed over the substrate. 50 A squeegee is passed across the screen to force solder paste through the apertures and on to the substrate. The 0 50 100 150 t (s) 200 layer thickness of screened solder paste is usually between 150 and 200 µm. Stencilling In this method a stencil with etched holes to pass the paste is used. The thickness of the stencil determines the amount of amount of solder paste that is deposited on the Fig.6 Theoretical time / temperature curve for a substrate. This method is also suited to high-volume work. typical thermal conductive reflow cycle. Dispensing A computer-controlled pressure syringe dispenses small doses of paste to where it is required. This method is mainly suitable for small production runs and laboratory use. 1996 Jun 06 13, Infrared An infrared oven has several heating elements giving a broad spectrum of infrared radiation, normally above and below a closed loop belt system. There are separate zones MBC937 for preheating, soldering and cooling. Dwell time in the 20 o / s soldering zone is kept as short as possible to prevent

T

( o C) o damage to components and substrate. A typical heating75 / s profile is shown in Fig.7. This reflow method is often applied in double-sided prints. Vapour phase A substrate is immersed in the vapours of a suitable boiling liquid. The vapours transfer latent heat of condensation to the substrate and solder reflow takes place. Temperature 0 is controlled precisely by the boiling point of the liquid at a preheating soldering cooling given pressure. Some systems employ two vapour zones,max. 45s8sone above the other. An elevator tray, suspended from a hoist mechanism passes the substrate vertically through the first vapour zone into the secondary soldering zone and then hoists it out of the vapour to be cooled. A theoretical time/temperature relationship for this method Fig.7 Typical temperature profile of an infrared is shown in Fig.8. oven operating at a belt speed of 0.41 mm / min. MBC939

T

( o C) free air cooling 20 s 10 - 30 s 45 s entering phase soldering zone removal phase 60 % of time in 150 % of time in soldering zone soldering zone Fig.8 Theoretical time / temperature curve relationship for dual vapour reflow soldering. 1996 Jun 06 14, SMD transistors Soldering footprints for SMD transistors included in this handbook are as follows: SOT143/SOT143R FOOTPRINTS 3.25 handbook, full pagewidth 0.60 (3x) 0.50 (3x) solder lands 0.60 (4x) solder resist 4 32.70 occupied area1.30 3.00 12 solder paste MSA441 0.90 1.00 2.50 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.9 Reflow soldering footprint for SOT143; typical dimensions. 4.45 handbook, full pagewidth 1.20 (3x) solder lands solder resist43occupied area 1.15 4.00 4.6012preferred transport direction during soldering MSA422 1.00 3.40 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.10 Wave soldering footprint for SOT143; typical dimensions. 1996 Jun 06 15, SOT223 FOOTPRINTS 7.00 handbook, full pagewidth 3.85 3.60 3.50 0.30 solder lands1.20 (4x) solder resist 4 occupied area solder paste 7.40 3.90 4.80 7.651231.20 (3x) MSA443 1.30 (3x) 5.90 6.15 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.11 Reflow soldering footprint for SOT223; typical dimensions. 1996 Jun 06 16, 8.90 handbook, full pagewidth 6.70 solder lands solder resist occupied area 4.30 8.10 8.70123preferred transport direction during soldering 1.90 (2x) 1.10 MSA424 7.30 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.12 Wave soldering footprint for SOT223; typical dimensions. 1996 Jun 06 17, SOT343 FOOTPRINTS 2.50 handbook, full pagewidth 0.60 (3x) 0.50 (3x) 0.55 solder lands (4x) 34 solder resist 1.30 2.40 2.70 occupied area12solder paste MSA430 0.70 0.80 1.90 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.13 Reflow soldering footprint for SOT343; typical dimensions. handbook, full pagewidth 3.65 0.90 (3x) solder lands432.30 solder resist occupied area 1.15 4.00 12 3.00 transport direction during soldering 1.00 MSA421 2.70 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.14 Wave soldering footprint for SOT343; typical dimensions. 1996 Jun 06 18, SOT96 (SO8) FOOTPRINTS 5.50 0.60 solder lands occupied area 7.00 6.60 4.00 1.30 MSA444 1.27 Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.15 Reflow soldering footprint for SOT96 (SO8); typical dimensions. 1996 Jun 06 19, 7.10 0.60 solder lands solder resist occupied area 9.40 8.00 3.80 0.3 1.20 2.10 MSA445 1.27 preferred transport direction during soldering Dimensions in mm. Placement accuracy: ±0.25 mm. Fig.16 Wave soldering footprint for SOT96 (SO8); typical dimensions. 1996 Jun 06 20, SOLDERING OF SMD MODULES SMD modules can be soldered by using the reflow technique. Wave soldering is not allowed for SMD MLB740300 modules. Conditions for reflow soldering are as follows: handbook, halfpage

T

The indicated temperatures are those at the solder mb ( o C) interfaces. Advised solder types are types with a liquidus below or 200 equal to 210 °C. Solder dots or solder prints must be large enough to wet the contact areas. Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. 0 0 100 200 300 t (s) 400 Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. The maximum soldering times at different temperatures Fig.17 Maximum allowable temperature profile. are indicated as follows: At 100 °C, t = 350 s At 125 °C, t = 300 s At 150 °C, t = 200 s At 175 °C, t = 100 s At 200 °C, t = 50 s At 250 °C (maximum temperature), t = 5 s. A soldering curve is shown in Fig.17: Cleaning The following may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Triclean B/S • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1996 Jun 06 21, MOUNTING OF FLANGE MOUNTED MODULES The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be General tightened to “finger tight” and then further tightened in The modules are manufactured using a ceramic substrate alternating steps to a maximum torque of 0.4 to 0.6 Nm. soldered to a copper or iron flange or mounting base; this A thin, even layer of thermal compound should be used causes a small thermal mismatch between these two between the mounting base and the heatsink to achieve components. A further thermal mismatch will exist the best possible contact thermal resistance. between the mounting base and the heatsink to which it is Excessive use of thermal compound will result in an mounted. Because of these mismatches, precautions increase in thermal resistance and possible bowing of the must be taken to avoid unnecessary mechanical stresses mounting base; too little will also result in poor thermal being applied to the ceramic substrate and other resistance. components within the module resulting from variations in temperature during operating cycles. Once mounted on the heatsink, the module leads can be soldered to the printed-circuit board. A soldering iron may Design of heatsink be used up to a temperature of 250 °C for a maximum of 10 seconds at a distance of 2 mm from the plastic cap. To ensure that the maximum specified mounting base ESD precautions must be taken to protect the device from temperature will not be exceeded under maximum fault electro-static damage. conditions, the module should always be mounted on a heatsink of suitable thermal resistance. Electrical connections The mounting area of the heatsink should be flat and free The main earth return path of all modules is via the from burrs and loose particles. Particular attention should mounting base; it is therefore important that the heatsink is be paid to the mounting hole areas. The maximum amount well earthed and that return paths are kept as short as of bowing along the plane of the module should not exceed possible. Failure to ensure this may result in loss of output 0.1 mm. Where anodizing is used, the area under the power or oscillation, which in turn will have a detrimental module should be milled clean as the presence of effect on the module life. anodizing under the module can result in high resistance earth paths, leading to oscillation and early failure, in The RF output connection should be to correctly-designed addition to poor thermal contact. 50 Ω terminations. Failure to do this will result in a mismatch being presented to the module, with a resulting The heatsink should be rigid and not prone to bowing reduction in module life. under thermal cycling conditions. The thickness of a solid heatsink should not be less than 5 mm, to ensure a rigid assembly. On finned heatsinks, the module should be CAUTION mounted along a plane parallel to the fins. Under no circumstances must the maximum specified operating or storage temperatures be exceeded, even Mounting of module for short periods. To ensure a good thermal contact and to prevent mechanical stresses when bolted down, the flatness of the mounting base is designed to be typically better than 100 µm. 1996 Jun 06 22, THERMAL CONSIDERATIONS The elements of thermal resistance shown in Fig.19 are defined as follows: Thermal resistance R thermal resistance from junction to mounting Circuit performance and long-term reliability are affected th j-mb base by the temperature of the transistor die. Normally, both are improved by keeping the die temperature (junction Rth j-c thermal resistance from junction to case temperature) low. Rth j-s thermal resistance from junction to soldering point Electrical power dissipated in any semiconductor device is a source of heat. This increases the temperature of the die Rth s-a thermal resistance from soldering point to about some reference point, normally an ambient ambient temperature of 25 oC in still air. The size of the increase in Rth c-a thermal resistance from case to ambient temperature depends on the amount of power dissipated (Rth s-a and Rth c-a are the same for most in the circuit and the net thermal resistance between the packages) heat source and the reference point. Rth j-a thermal resistance from junction to ambient. Devices lose most of their heat by conduction when The temperature at the junction depends on the ability of mounted onaaprinted board, a substrate or heatsink. the package and its mounting to transfer heat from the Referring to Fig.18 (for surface mounted devices mounted junction region to the ambient environment. The basic on a substrate), heat conducts from its source (the relationship between junction temperature and power junction) via the package leads and soldered connections dissipation is: to the substrate. Some heat radiates from the package into the surrounding air where it is dispersed by convection or Tj max = Tamb + Ptot max (Rth j-s + Rth s-a) by forced cooling air. Heat that radiates from the substrate = Tamb + Ptot max (Rth j-a) is dispersed in the same way. where: Tj max is the maximum junction temperature Tamb is the ambient temperature Ptot max is the maximum power handling capability of the device, including the effects of external loads when applicable. In the expression for Tj max, only Tamb and Rth s-a can be varied by the user. The package mounting technique and 1 the flow of cooling air are factors that affect Rth s-a. handbook, halfpage The device power dissipation can be controlled to a limited extent but under recommended usage, the supply voltage 2 23 3 and circuit loading dictate a fixed power maximum.The Rth j-s value is essentially independent of external4 MBB438 mounting method and cooling air; but is sensitive to the materials used in the package construction, the die bonding method and the die area, all of which are fixed. Values of Tj max and Rth j-s, or Rth j-c or Rth j-a are given in the device data sheets. For applications where the temperature of the case is stabilized by a large or Heat radiates from the package ‘1’ to ambient. Heat conducts via leads ‘2’, solder joints ‘3’ to the substrate ‘4’. temperature-controlled heatsink, the junction temperature can be calculated from Fig.18 Heat losses. Tj = Tcase + Ptot × Rth j-c or, using the soldering point definition, from Tj = Tsolder + Ptot × Rth j-s. 1996 Jun 06 23, junction handbook, halfpage R th j–mb =R th j–c R th j–s soldering point or R th j–a case Rth c–a ambient MBB439 Fig.19 Representation of thermal resistance paths of a device mounted on a substrate or printed board. 1996 Jun 06 24]
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Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola’s High Cell Density TMOS 20 VOLTS process. These minia
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR7- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can withs
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR6- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR30- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 60PT 80PT 100PT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These de
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR25- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope suitable for surface PBYR2- 35CT 40CT 45CT mounting, featuring low forward VRRM Repetitive peak reverse 35 40 45 V voltage drop and absen
DISCRETE SEMICONDUCTORS DATA SHEET PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING MARKING • Low switching losses PIN DESCRIPTION MARKING TYPE NUMBE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR20- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 60CT 80CT 100CT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR16- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR16- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR15F- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of s
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR15- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR10- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 60 80 100 voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can wi
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b 8.0 0.1 Al 2 O3 0.125 4.0 2.4 3.4 max max 3.0 BeO 3 seating 5.30 1.3 plane max 1.0 20.6 max 1.8 max seating plane 3.2 4 2.9 0.4 M min 1 4.0 min130.75 3.2 5.2 5.35 2.
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09 4.0 handbook, full pagewidth 5.0 3.8 A 4.8 S 0.1 S 6.2 5.8 0.7 0.3850.7 1.45 0.6 0.25 1.75 1.25 0.19 1.35140.25 1.0 o pin
DISCRETE SEMICONDUCTORS DATA SHEET OM2070B Wideband amplifier module Product specification 1995 Nov 29 Supersedes data of October 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2070B Wideband amplifier module Product specification 1995 Nov 29 Supersedes data of October 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is inten
DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification 1995 Nov 14 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification 1995 Nov 14 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster
DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of June 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of June 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended
DISCRETE SEMICONDUCTORS DATA SHEET OM2060 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2060 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster
DISCRETE SEMICONDUCTORS DATA SHEET OM2052 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of November 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2052 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of November 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intende
DISCRETE SEMICONDUCTORS DATA SHEET OM2050 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2050 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended -head as an amplifier in RATV a
DISCRETE SEMICONDUCTORS DATA SHEET OM2045 Wideband amplifier module Product specification 1995 Nov 10 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2045 Wideband amplifier module Product specification 1995 Nov 10 File under Discrete Semiconductors, SC16 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended as an aerial amplifier in car r