Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR7- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can withstand voltage reverse voltage transients and have VF Forward voltage 0.57 0.57 0.57 V guaranteed reverse surge capability. IF(AV) Forward current 7.5 7.5 7.5 A The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switchi...
Author: Florian Hartmann Shared: 8/19/19
Downloads: 131 Views: 4130

Content

GENERAL DESCRIPTION QUICK REFERENCE DATA

Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR7- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can withstand voltage reverse voltage transients and have VF Forward voltage 0.57 0.57 0.57 V guaranteed reverse surge capability. IF(AV) Forward current 7.5 7.5 7.5 A The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.

PINNING - TO220AC PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 cathode (k) k 2 anode (a) a tab cathode (k) 1 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -35 -40 -45 VRRM Repetitive peak reverse voltage - 35 40 45 V VRWM Crest working reverse voltage - 35 40 45 V VR Continuous reverse voltage Tmb ≤ 139 ˚C - 35 40 45 V IF(AV) Average forward current square wave; δ = 0.5; - 7.5 A IF(RMS) RMS forward current - 10.6 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 15 A IFSM Non-repetitive peak forward t = 10 ms - 135 A current t = 8.3 ms - 150 A sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t I2t for fusing t = 10 ms - 91 A2s IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A IRSM Non-repetitive peak reverse tp = 100 µs - 1 A current Tstg Storage temperature -65 175 ˚C Tj Operating junction temperature - 150 ˚C October 1994 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 3.0 K/W mounting base Rth j-a Thermal resistance junction to in free air. - 60 - K/W ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 7.5 A; Tj = 125˚C - 0.50 0.57 V IF = 15 A; Tj = 125˚C - 0.62 0.72 V IF = 15 A - 0.74 0.84 V IR Reverse current VR = VRWM - 50 100 µA VR = VRWM; Tj = 125 ˚C - 12 22 mA Cd Junction capacitance f = 1MHz; VR = 5V; Tj = 25 ˚C to - 350 - pF 125 ˚C October 1994 2 Rev 1.100, PF / W PBYR745 Tmb(max) / C IR / mA PBYR745 8 126 Vo = 0.419 100 7 Rs = 0.015 129 D = 1.0 6 132 10 150C50.5 135 125C40.2 138 1 0.1 100C3141 I tp D = tp 0.12T144 75C1t147T Tj = 50 C0.01 0 15000246810 12 25 50 IF(AV) / A VR/ V

Fig.1. Maximum forward dissipation PF = f(IF(AV)); Fig.4. Typical reverse leakage current; IR = f(VR);

square current waveform where IF(AV) =IF(RMS) x √D. parameter Tj PF / W PBYR745 Tmb(max) / C 5 135 Cd / pF PBYR745 Vo = 0.419 a = 1.57 1000 Rs = 0.015 1.9 2.2 138 2.834141 2 144 1 147 0 150012345678110 100 IF(AV) / A VR / V

Fig.2. Maximum forward dissipation PF = f(IF(AV)); Fig.5. Typical junction capacitance; Cd = f(VR);

sinusoidal current waveform where a = form f = 1 MHz; Tj = 25˚C to 125 ˚C. factor = IF(RMS) / IF(AV). IF / A PBYR745 Zth j-mb (K/W) 50 10 Tj = 25 C typ max Tj = 125 C 0.1 PD tpt00.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 10us 1ms 0.1s 10s VF / V tp / s

Fig.3. Typical and maximum forward characteristic Fig.6. Transient thermal impedance; Zth j-mb = f(tp). IF = f(VF); parameter Tj October 1994 3 Rev 1.100

, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 1,3 3,7 2,8 5,9 min 15,8 3,0 max not tinned 3,0 13,5 min 1,3 max12(2x) 0,9 max (2x) 0,6 5,08 2,4 Fig.7. TO220AC; pin 1 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 4 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 5 Rev 1.100]
15

Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR6- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devi
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR30- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 60PT 80PT 100PT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These de
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR25- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope suitable for surface PBYR2- 35CT 40CT 45CT mounting, featuring low forward VRRM Repetitive peak reverse 35 40 45 V voltage drop and absen
DISCRETE SEMICONDUCTORS DATA SHEET PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING MARKING • Low switching losses PIN DESCRIPTION MARKING TYPE NUMBE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR20- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of st
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR20- 60CT 80CT 100CT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR16- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR16- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR15F- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of s
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR15- 35CT 40CT 45CT voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These dev
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack, plastic envelope featuring low PBYR10- 35F 40F 45F forward voltage drop and absence of VRRM Repetitive peak reverse 35 40 45 V stored charge. These d
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 35 40 45 voltage drop and absence of stored VRRM Repetitive peak reverse 35 40 45 V charge. These devices can with
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR10- 60 80 100 voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can wi
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b 8.0 0.1 Al 2 O3 0.125 4.0 2.4 3.4 max max 3.0 BeO 3 seating 5.30 1.3 plane max 1.0 20.6 max 1.8 max seating plane 3.2 4 2.9 0.4 M min 1 4.0 min130.75 3.2 5.2 5.35 2.
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification 1996 May 29 File under Discrete Semiconductors, SC09 4.0 handbook, full pagewidth 5.0 3.8 A 4.8 S 0.1 S 6.2 5.8 0.7 0.3850.7 1.45 0.6 0.25 1.75 1.25 0.19 1.35140.25 1.0 o pin
DISCRETE SEMICONDUCTORS DATA SHEET OM2070B Wideband amplifier module Product specification 1995 Nov 29 Supersedes data of October 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2070B Wideband amplifier module Product specification 1995 Nov 29 Supersedes data of October 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is inten
DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification 1995 Nov 14 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification 1995 Nov 14 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster
DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of June 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of June 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended
DISCRETE SEMICONDUCTORS DATA SHEET OM2060 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2060 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster
DISCRETE SEMICONDUCTORS DATA SHEET OM2052 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of November 1991 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2052 Wideband amplifier module Product specification 1995 Nov 28 Supersedes data of November 1991 File under Discrete Semiconductors, SC16 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intende
DISCRETE SEMICONDUCTORS DATA SHEET OM2050 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2050 Wideband amplifier module Product specification 1995 Nov 13 File under Discrete Semiconductors, SC16 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended -head as an amplifier in RATV a
DISCRETE SEMICONDUCTORS DATA SHEET OM2045 Wideband amplifier module Product specification 1995 Nov 10 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET OM2045 Wideband amplifier module Product specification 1995 Nov 10 File under Discrete Semiconductors, SC16 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended as an aerial amplifier in car r
Order this document
Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3302/D " Power Surface Mount Products SINGLE TMOS ! ! POWER MOSFET 30 VOLTS WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s RDS(on) = 10 m latest MOSFET technology process to achieve the lowest possible on–re
Order this document SEMICONDUCTOR TECHNICAL DATA by MMT10V275/D High Voltage Bidirectional TVS Devices
Order this document SEMICONDUCTOR TECHNICAL DATA by MMT10V275/D *Motorola preferred devices High Voltage Bidirectional TVS Devices BIDIRECTIONAL These transient voltage suppression (TVS) devices prevent overvoltage THYRISTOR SURGE damage to sensitive circuits by lightning, induction and power line c
Order this document The RF Small Signal Line Pseudomorphic High Electron Mobility Transistor
Order this document SEMICONDUCTOR TECHNICAL DATA by MRF9822T1/D The RF Small Signal Line Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz Designed for use in low voltage, moderate power amplifiers such as portable HIGH FREQUENCY analog and digital cellular radios and PC RF modems. POW