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GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 60PT 80PT 100PT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can withstand voltage reverse voltage transients and have VF Forward voltage 0.7 0.7 0.7 V guaranteed reverse surge capability. IO(AV) Output current (both 30 30 30 A The devices are intended for use in diodes conducting) switched mode power supplies and high frequency circuits in general wher...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30- 60PT 80PT 100PT voltage drop and absence of stored VRRM Repetitive peak reverse 60 80 100 V charge. These devices can withstand voltage reverse voltage transients and have VF Forward voltage 0.7 0.7 0.7 V guaranteed reverse surge capability. IO(AV) Output current (both 30 30 30 A The devices are intended for use in diodes conducting) switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 Anode 1 (a) a1 a2 2 Cathode (k) 3 Anode 2 (a) tab Cathode (k) k123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -60 -80 -100 VRRM Repetitive peak reverse voltage - 60 80 100 V VRWM Crest working reverse voltage - 60 80 100 V VR Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V IO(AV) Output current (both diodes square wave; δ = 0.5; - 30 A conducting)1 Tmb ≤ 124 ˚C IO(RMS) RMS forward current - 43 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode Tmb ≤ 124 ˚C IFSM Non-repetitive peak forward t = 10 ms - 180 A current per diode. t = 8.3 ms - 200 A sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t I2t for fusing t = 10 ms - 162 A2s IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A per diode. IRSM Non-repetitive peak reverse tp = 100 µs - 1 A current per diode. Tstg Storage temperature -65 175 ˚C Tj Operating junction temperature - 150 ˚C 1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base. October 1994 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to per diode - - 1.4 K/W mounting base both diodes - - 1.0 K/W Rth j-a Thermal resistance junction to in free air. - 45 - K/W ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage (per diode) IF = 15 A; Tj = 125˚C - 0.61 0.70 V IF = 30 A; Tj = 125˚C - 0.74 0.85 V IF = 15 A; Tj = 25˚C - 0.77 0.85 V IR Reverse current (per diode) VR = VRWM; Tj = 25 ˚C - 5.0 150 µA VR = VRWM; Tj = 125 ˚C - 5.0 15 mA Cd Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 600 - pF diode) 125 ˚C October 1994 2 Rev 1.100, PF / W PBYR30100PT Tmb(max) / C IR/ mA PBYR30100PT 20 100 Vo = 0.550 V 122 Rs = 0.010 Ohms D = 1.0 Tj/ C = 150 15 129 10 0.5 125 0.2 10 136 1 100 0.1 I tp tp 75D = 5 T 143 0.1Tt0150 0.01 0 10 20 26 10 20 30 40 50 60 70 80 90 100 IF(AV) / A VR/ V

Fig.1. Maximum forward dissipation PF = f(IF(AV)) per Fig.4. Typical reverse leakage current per diode;

diode; square current waveform where IR = f(VR); parameter Tj

IF(AV) =IF(RMS) x √D.

PF / W PBYR30100 Tmb(max) / C Cd/ pF PBYR30100PT 15 129 10000 Vo = 0.550 V Rs = 0.010 Ohms a = 1.57 1.9 2.2 10 2.8 136 1000 5 143 100 0 150 100510 15 1 10 100 IF(AV) / A VR/ V

Fig.2. Maximum forward dissipation PF = f(IF(AV)) per Fig.5. Typical junction capacitance per diode;

diode; sinusoidal current waveform where a = form Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. factor = IF(RMS) / IF(AV). IF / A PBYR30100PT Zth j-mb (K/W) 100 10 Tj = 25 C Tj = 125 C Typ Max 0.1 PD tpt00.01 0 0.5 1 1.5 2 10us 1ms 0.1s 10s VF / V tp / s

Fig.3. Typical and maximum forward characteristic Fig.6. Transient thermal impedance per diode;

per diode; IF = f(VF); parameter Tj Zth j-mb = f(tp).

October 1994 3 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm 15.2 Net Mass: 5 g max14 13.6 4.6 2 max 4.25 4.15 2 4.4 12.7 max 2.2 max 0.5 dimensions within min 13.6 this zone are min uncontrolled1235.5 0.5 M 0.4 1.15 0.95 1.6 Fig.7. SOT93; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". October 1994 4 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 5 Rev 1.100]
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