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GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of stored charge. These voltage devices can withstand reverse VF Forward voltage 0.65 0.65 0.65 V voltage transients and have IO(AV) Output current (both 20 20 20 A guaranteed reverse surge capability. diodes conducting) The devices are intended for use in switched mode power supplies and high frequency ...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky barrier rectifier diodes in a full pack, plastic envelope featuring PBYR25- 35CTF 40CTF 45CTF low forward voltage drop and VRRM Repetitive peak reverse 35 40 45 V absence of stored charge. These voltage devices can withstand reverse VF Forward voltage 0.65 0.65 0.65 V voltage transients and have IO(AV) Output current (both 20 20 20 A guaranteed reverse surge capability. diodes conducting) The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case 1 anode 1 (a) a1 a2 2 cathode (k) 3 anode 2 (a) k123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -35 -40 -45 VRRM Repetitive peak reverse voltage - 35 40 45 V VRWM Crest working reverse voltage - 35 40 45 V VR Continuous reverse voltage Ths ≤ 111 ˚C - 35 40 45 V IO(AV) Output current (both diodes square wave; δ = 0.5; - 20 A conducting) Ths ≤ 104 ˚C IO(RMS) RMS forward current - 20 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode Ths ≤ 104 ˚C IFSM Non-repetitive peak forward t = 10 ms - 135 A current per diode t = 8.3 ms - 150 A sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t I2t for fusing t = 10 ms - 91 A2s IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A per diode. IRSM Non-repetitive peak reverse tp = 100 µs - 1 A current per diode. Tstg Storage temperature -65 175 ˚C Tj Operating junction temperature - 150 ˚C October 1994 1 Rev 1.100,

ISOLATION

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - - 1500 V three terminals to external Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to per diode - - 4.8 K/W heatsink both diodes - - 4.0 K/W (with heatsink compound) Rth j-a Thermal resistance junction to in free air. - 55 - K/W ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage (per diode) IF = 20 A; Tj = 125˚C - 0.58 0.65 V IF = 20 A - 0.63 0.68 V IR Reverse current (per diode) VR = VRWM - 100 200 µA VR = VRWM; Tj = 125 ˚C - 12 40 mA Cd Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 800 - pF diode) 125 ˚C October 1994 2 Rev 1.100, PF / W PBYR1645F Ths(max) / C IR / mA PBYR1645 15 78 100 Vo = 0.3020 V Rs = 0.0139 Ohms D = 1.0 0.5 150 C 0.2 10 10 0.1 102 125 C 100C5126 I tp tD = p 0.1 75 C

T

Tj = 50CTt0.01 0 150 0 25 500510 15 20 25 IF(AV) / A VR/ V

Fig.1. Maximum forward dissipation PF = f(IF(AV)) per Fig.4. Typical reverse leakage current per diode;

diode; square current waveform where IR = f(VR); parameter Tj

IF(AV) =IF(RMS) x √D.

PF / W PBYR1645F Ths(max) / C 14 82.8 Cd / pF PBYR1645 Vo = 0.302 V 10000 Rs = 0.0139 Ohms a = 1.57 12 92.4 2.2 1.9 10 1024 2.8 8 111.6 6 121.2 4 130.8 2 140.4 0 1500510 15 1 10 100 IF(AV) / A VR / V

Fig.2. Maximum forward dissipation PF = f(IF(AV)) per Fig.5. Typical junction capacitance per diode;

diode; sinusoidal current waveform where a = form Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. factor = IF(RMS) / IF(AV). IF / A PBYR1645 Zth j-hs (K/W) Tj = 25 C typ max 10 Tj = 125 C 0.1 PD tpt00.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 10us 1ms 0.1s 10s VF / V tp / s

Fig.3. Typical and maximum forward characteristic Fig.6. Transient thermal impedance per diode; IF = f(VF); parameter Tj Zth j-hs = f(tp). October 1994 3 Rev 1.100

,

MECHANICAL DATA

Dimensions in mm 10.2 Net Mass: 2 g max 5.7 4.4 max 0.9 max 3.2 0.5 3.0 2.9 max 4.4 4.0 7.9 7.5 seating max plane 3.5 max not tinned 4.4 13.5 min1230.4 M 0.9 0.7 0.55 max 2.54 1.3 5.08 top view Fig.7. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 4 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 5 Rev 1.100]
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