Download: DISCRETE SEMICONDUCTORS DATA SHEET PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING MARKING • Low switching losses PIN DESCRIPTION MARKING TYPE NUMBER • High breakdown voltage 1 anode (a1) CODE • Fast recovery time 2 common cathode PBYR280CT BYR28 • Guard ring protected 3 anode (a ) PBYR290CT BYR292 • Plastic SMD package. 4 common cathode PBYR2100CT BYR210 APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection....
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D087

PBYR2100CT series Schottky barrier double diodes

Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01, FEATURES PINNING MARKING • Low switching losses PIN DESCRIPTION MARKING TYPE NUMBER • High breakdown voltage 1 anode (a1) CODE • Fast recovery time 2 common cathode PBYR280CT BYR28 • Guard ring protected 3 anode (a ) PBYR290CT BYR292 • Plastic SMD package. 4 common cathode PBYR2100CT BYR210

APPLICATIONS

• Low power, switched-mode power supplies • Rectifying • Polarity protection. 1 3 DESCRIPTION 2 The PBYR2100CT series consists of123Schottky barrier double diodes, fabricated in planar technology, and Top view MAM086 encapsulated in SOT223 plastic SMD packages. Fig.1 Simplified outline (SOT223), pin configuration and symbol. 1996 May 03 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage PBYR280CT − 80 V PBYR290CT − 90 V PBYR2100CT − 100 V VRRM repetitive peak reverse voltage PBYR280CT − 80 V PBYR290CT − 90 V PBYR2100CT − 100 V VRWM crest working reverse voltage PBYR280CT − 80 V PBYR290CT − 90 V PBYR2100CT − 100 V IF(AV) average forward current Tamb = 85 °C; see Fig.2; − 1 A Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 IFSM non-repetitive peak forward current t = 8.3 µs half sine wave; − 10 A JEDEC method IRSM non-repetitive peak reverse current tp = 100 µs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Tamb operating ambient temperature − 85 °C Notes 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 03 3, ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 1 A; note 1 − − 790 mV IF = 1 A; Tj = 100 °C; note 1 − − 690 mV IR reverse current VR = VRRMmax; note 1; see Fig.4 − − 0.5 mA VR = VRRMmax; Tj = 100 °C; − − 5 mA note 1; see Fig.4 Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.5 − − 100 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 70 K/W Note 1. Refer to SOT223 standard mounting conditions. 1996 May 03 4, GRAPHICAL DATA MSA897 MSA895 1.2 10

I

I FF(AV) (A) (A) 0.8 (1) 10 1 (2) (3) (4) 0.4 (5) 1020103040 80 120 160 0 0.4 0.8 1.2 1.6 T ( oVF(V)j C) (1) Tamb = 25 °C. (2) Tamb = 85 °C. (3) Tamb = 100 °C. (4) Tamb = 125 °C. (5) Tamb = 150 °C. Fig.3 Forward current as a function of forward Fig.2 Average forward current derating curve. voltage; typical values. MSA898 3 MSA896 10 1 10

IR

(A) (5) 10 2 Cd (4) (pF) (3) 10 3 (2) 10 2 10 4 10 5 (1) 10 6 10 0 20 40 60 80 100 0 50VR(V) V R (V) (1) Tamb = 25 °C. (2) Tamb = 85 °C. (3) Tamb = 100 °C. (4) Tamb = 125 °C. (5) Tamb = 150 °C. f = 1 MHz. Fig.4 Reverse current as a function of reverse Fig.5 Diode capacitance as a function of reverse voltage; typical values. voltage; typical values. 1996 May 03 5, PACKAGE OUTLINE handbook, full pagewidth 0.95 0.85 S seating plane 0.1 S 0.32 0.24 6.7 6.3 3.1 B 0.2MA2.9

A

0.10 0.01 3.7 7.3 3.3 6.7 16o o max 1612310o 1.80 0.80 max 2.3 0.60 0.1MBmax (4x) MSA035 - 1 4.6 Dimensions in mm. Fig.6 SOT223. 1996 May 03 6,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 7]
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