Download: Transistors Packages
Transistors Packages Transistors Packages...
Author:
Richard Shared: 7/30/19
Downloads: 1816 Views: 3965
Content
Transistors Packages, Transistors Packages]
15
Similar documents
Multi-layer ceramic chip capacitors MCH18 (1608 (0603) size, chip capacitor) !Features !External dimensions (Units : mm) 1) Small size (1.6 x 0.8 x 0.8 mm) makes it perfect for lightweight portable devices. 2) Comes packed either in tape to enable automatic mounting or in bulk cases. 3) Barrier laye
Packaging Surface-mount type Package Code packaging direction Basic ordering specification unit TL Embossed tape Pin 1 is nearest to the sprocket hole. 13000 pcs EMT3 TBL Embossed tape Pin 1 is nearest to the sprocket hole. 15000 pcs T106 Embossed tape Pin 1 is nearest to the sprocket hole. 13000 pc
esogi chn ol Te Foil 1 Best noise figure for bipolar transistors High gain at low voltage operation High linearity at low power consumption Replacement for expensive GaAs devices Foil 2 !"# $% & && & ' ( & Foil 3 %)* !"#$% 70GHz SiGe process • extremely low noise NF = 0.65dB • high gain G = 21dB
HITACHI RF Wireless Products for Mobile Communications Hitachi RF Solutions • Developed using Advanced Technologies MOSFET, HEMT, BiCMOS, Bipolar, SOI, GaAs MESFET, and MMIC • Wide Ra nge of Products Power Amplifiers, RF Integration Blocks, UpConverters, Down Converter, High Power MOSFET for PA, Pha
Overview of RF/Wireless ICs RF Power Amplifier Module Nomenclature Hitachi offers silicon solutions for international wireless communication standards, including cellular AMPS, CDPD, ETACS, IS.136 TDMA and GSM. To enable our customers to produce PF XXXXX X - XX innovative wireless designs, we provid
RF/Wireless Products Description Hitachi offers superior RF solu- management switches, LCD con- • PF1411B: 900MHz Cellular tions for a variety of wireless trollers/ drivers, and memory prod- GSM power module, 3.5V, communication standards, includ- ucts (SRAM, Flash devices and high efficiency ing AM
Tantalum capacitors Chip tantalum capacitors with built–in open–function TCFG series Semiconductor manufacturing technology has been used to include a temperature fuse in TCFG series capacitors. These capacitors feature low impedance and are ideal for digital circuits and low–voltage circuits in por
19-1463; Rev 0; 5/99 KIT MAN UAL EVALUA TION EET LOWS D ATA SH FOL +3.6V, 1W Autoramping Power General Description Features The MAX2235 low-voltage, silicon RF power amplifier ♦ 800MHz to 1000MHz Operation (PA) is designed for use in the 900MHz frequency band. It operates directly from a single +2.7
PACKAGE LINE-UP PLASTIC PACKAGE LINE-UP (1) : Under development : Under planning (mm) 58910 12 14 16 18 20 22 24 28 30 32 36 40 42 48 52 64 SIP Single Inline Package 2.54 – ● ●● ● ● 2.54 – ● ● HSIP Single Inline Package 1.778 – ● 325 ● ● ● ZIP Zig-zag Inline Package 1.27 300 ● ● ● ●● ●● ● ●● ● ● D
19-4797; Rev 0; 2/99 MANUA L ION KIT EVALUA T DATA SH EET FOLLOW S General Description Features The MAX2470/MAX2471 are flexible, low-cost, high- ♦ +2.7V to +5.5V Supply Range reverse-isolation buffer amplifiers for applications with discrete and module-based VCO designs. Both feature ♦ Input Freque
19-1384; Rev 1; 2/99 KIT EVALUA TION DATA S HEET FOLLOW S 400MHz to 2500MHz SiGe General Description Features The MAX2640/MAX2641 are low-cost, ultra-low-noise ♦ Wide Operating Frequency Range amplifiers designed for applications in the cellular, PCS, MAX2640: 400MHz to 1500MHz GPS, and 2.4GHz ISM f
Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. FEATURES Pi GND - Low voltage operation Vg1 Vd=3.2V - High output powe
Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-97-B-0920 Author : T.F. Buss Date : 20-11-97 Department : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG5
19-1635; Rev 0; 1/00 VALUAT ION KITEEAVAILAB L Complete Dual-Band General Description Features The MAX2360 dual-band, triple-mode complete transmit- Dual-Band, Triple-Mode Operation ter for cellular phones represents the most integrated and architecturally advanced solution to date for this applica
2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm, and Rs. As Fig. 4 shows, Ls and Lm represents, respectively, self-inductance and mutual inductance; Co and Cm, self-capac
PACKAGE STRUCTURE The following diagrams show the structure of typical IC packages. STRUCTURE OF METAL SEALED DIP CHIP LID (Au or Ni PLATING) AI WIRE SEALING MATERIAL (Au/Sn or Pb/Sn) CERAMIC BODY LEAD (Pb/Sn or Au PLATING) SOFT SOLDER (Pb/Sn) STRUCTURE OF PLASTIC MOLDED DIP SILVER SPOT PLATING EP
IC PACKAGE CLASSIFICATION The following pages classify Mitsubishi Packages by the sealing method and the mounting method. The conventions shown here are used throughout this DATA BOOK, so we suggest you take the time to review them. PLASTIC PACKAGES [Mounting Method] [ No. of ] [Type] [Outline]pin
APPLICATION NOTE5WClass-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 INTRODUCTION This application note contains information ona5Wclass-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935
APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY 5 ADJUSTMENT OF THE AMPLIFIER 5.1 Tuning the outputnetwork 5.2 Testing the unit under RF conditions 5.3 Tuning the unit’s inputnet
APPLICATION NOTE A broadband3Wamplifier for band IV/V TV transposers based on the BLW898 AN98015 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 AMPLIFIER ELECTRICAL DESIGN OBJECTIVES 4 DESIGN OF THE AMPLIFIER 4.1 Mounting the transistor 4.2 Positioning of the matching capacitors (see Figs 3 and 4) 5 AMPLIFIER
APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 CONTENTS 22 APPENDIX F4 23 APPENDIX G1 1 ABSTRACT 24 APPENDIX G2 2 INTRODUCTION 25 APPENDIX H1 3 TRANSISTOR DESCRIPTION 26 APPENDIX H2 3.1 Main properties of the BLV862 3.2 Internal matching 3.3
APPLICATION NOTE A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F ECO8005 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 199
APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A low
APPLICATION NOTE A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 ECO7904 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 19
APPLICATION NOTE A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 ECO7901 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS 3.1 The equivalent circuit of the BLW34 3.1.1 The output network 3.1.2 The input network 4 THE HYBRID COUPLED AMPLIFIER 4.1 Practical
APPLICATION INFORMATION 400 MHz low noise amplifier with the BFG540W/X ABSTRACT • Description of the product The BFG540W/X is one of the Philips silicon planar epitaxial wideband transistors of the BFG500 series. • Application area Low voltage analog and digital UHF-applications in the GHz range. •
DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification 1997 Dec 04 Supersedes data of August 1995 File under Discrete Semiconductors, SC14 FEATURES MARKING • High power gain TYPE NUMBER CODE • Low noise figure BFG540W N9 page43• High tran
INTEGRATED CIRCUITS DATA SHEET I2C-bus allocation table General 1997 Mar 03 File under Integrated Circuits, IC12 I2C-BUS ALLOCATION TABLE (IN GROUP ORDER) The group number represents the hexadecimal equivalent of the four most significant bits of the slave address (A6-A3). Group 0 (0000) 000- Genera
DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 FEATURES PINNING • High power gain PIN DESCRIPTION handbook, 2 c4olumns 3 • Low noise figure BFG540 (Fig.1) Code: N37 • High tran
Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,0