Download: esogi chn ol Te Foil 1

esogi chn ol Te Foil 1 Best noise figure for bipolar transistors High gain at low voltage operation High linearity at low power consumption Replacement for expensive GaAs devices Foil 2 !"# $% & && & ' ( & Foil 3 %)* !"#$% 70GHz SiGe process • extremely low noise NF = 0.65dB • high gain G = 21dB • high Input IP3 capability @ 6mA IIP3 = 10dBm • max. current drain Ic = 80mA samples available: Dec99 Foil 4 * +& #)*% &'("))) &*) !+,!!-.*// !"## $ %012!" #% & ' ('$$' Foil 5 , & - fT = 70GHz SiGe SiGe NF = 0.65dB BFP620 Gain = 21dB BFP6xx @ 1.8GHz;2V fT = 45GHz SIEGET45 Si-Bipolar BFP540 SIEGE...
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esogi chn ol

Te

Foil 1, Best noise figure for bipolar transistors High gain at low voltage operation High linearity at low power consumption Replacement for expensive GaAs devices Foil 2, !"# $% & && & ' ( & Foil 3, %)* !"#$% 70GHz SiGe process • extremely low noise NF = 0.65dB • high gain G = 21dB • high Input IP3 capability @ 6mA IIP3 = 10dBm • max. current drain Ic = 80mA samples available: Dec99 Foil 4, * +& #)*% &'("))) &*) !+,!!-.*// !"## $ %012!" #% & ' ('$$' Foil 5, , & - fT = 70GHz SiGe SiGe NF = 0.65dB BFP620 Gain = 21dB BFP6xx @ 1.8GHz;2V fT = 45GHz SIEGET45 Si-Bipolar BFP540 SIEGET45 NF = 0.95dB BFR520F Gain = 23dB SIEGET45 BFR5xxF @ 1.8GHz;2V BFP520 fT = 25GHz SIEGET25 Si-Bipolar BFP405 SIEGET25 NF = 1.05dB BFP420 BFP405F Gain = 20dB BFP450 BFP420F @ 1.8GHz;2V BFP490 1996 1999 2000 SOT-343 TSFP-4 SCT-595 Foil 6]
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