Download: HITACHI RF Wireless Products for Mobile Communications

HITACHI RF Wireless Products for Mobile Communications Hitachi RF Solutions • Developed using Advanced Technologies MOSFET, HEMT, BiCMOS, Bipolar, SOI, GaAs MESFET, and MMIC • Wide Ra nge of Products Power Amplifiers, RF Integration Blocks, UpConverters, Down Converter, High Power MOSFET for PA, Phase Lock Loops, Discrete(Diode, Transistor) , and LNA • Target Applications -Subscriber Handsets: AMPS, GSM Cellular, CDMA and GSM PCS -Infrastructure: Base Stations for AMPS, CDMA, and TDMA -Wireless Data -Two Way Pagers Hitachi Products for Wireless Application MPAK CMPAK Bipolar TRS HEMT(GaAs) Bip...
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HITACHI

RF Wireless Products for Mobile Communications,

Hitachi RF Solutions

• Developed using Advanced Technologies MOSFET, HEMT, BiCMOS, Bipolar, SOI, GaAs MESFET, and MMIC • Wide Ra nge of Products Power Amplifiers, RF Integration Blocks, UpConverters, Down Converter, High Power MOSFET for PA, Phase Lock Loops, Discrete(Diode, Transistor) , and LNA • Target Applications -Subscriber Handsets: AMPS, GSM Cellular, CDMA and GSM PCS -Infrastructure: Base Stations for AMPS, CDMA, and

TDMA

-Wireless Data -Two Way Pagers,

Hitachi Products for Wireless Application MPAK

CMPAK Bipolar TRS HEMT(GaAs) Bipolar TRS Products MESFET MESFET CMPAKMPAK-5

MMIC Down Converter Low Noise Amp

TSSOP-20 Frequency Dual-PLL Synthesizer

SW PLL TCXO

PFPAK-E PFPAK-K

VCO

PiN Diode

URP

RF Module Varicap MMIC Diode URP MPAK

Up Converter Power supply

Power MOS Schottky Diode Power Amp Bipolar TRS UPAKSOP-8 MESFET TSSOP-8,

GSM RF Solution

Bipolar TRS

MESFET I

RF RF LNA SAW SAW AGC I&Q filter Demo.filter RF Q filter

TCXO

RF VCO B.B. PLL1 PLL2 HD155101BF Block

HD155017T PiN Diode (Dual PLL) IFVCO

(SW) LPF PF01411A (Module) I Loop Phase I&Q Mod filter Detector Q Det

HD155161(Control )

,

Cellular Phone Components Trends

• More Cost Effective Solutions - Using Smaller Geometry Silicon Process Optimizing the level of Integration • Smaller Solutions - New Packaging Technologies Multi-layer Ceramics, etc. • Lower Power - Efficient Power Amplifiers by New MOSFET & GaAs MESFET • Low Supply Voltage,

Hitachi Power Amplifier Solutions

Smaller, Higher Efficiency & Smarter 1. Application : Cellular Systems - GSM, PDC, IS-95, IS-136, AMPS 2. Product : Module, MMIC, Discrete 3. Device Technology : MOSFET, GaAs MESFET, P-HEMT 4. Small Size Package & Assemble Technology,

RF Module Package Trend • Multi-layer

• Lead less MOS FET Chip PassiveComponent

SMD

Metal Reflow 500 cover G-PKG Multi-layer VIA hole Thermal VIA Ceramic 200 E-PKG H1-PKG K-PKG M-PKG (0.20cc) (0.18cc) 10.0 100 8.0 1.8 13.75 10.0 '90 '91 '92 '93 '94 '95 '96 '97 '98 '99 2000 Projected Area ( mm ),

MOSFET Power Amplifier

- MOSFET - Advantages : • Single Power Supply • Easy Power Control • Hardness for Overload • MOSLSI Process is Applicable,

Advantages of Si MOSFET Module

Package : • SMD • Metal Cover • Reflow PF00XX Pin Vapc Vdd Pout • Hardened for Overload Coupler RF in DUP Rx

DET

• No switch for cut off • Small stand-by current • Ids ≤ 0.1 µA typ (Vapc=0V) • Single supply • Easy Power Control Power Control • Wide APC dynamic range Power Control - 80 dB typ. -,

Comparison of MOS & GaAs FET Modules

Vsupply Vsupply

PMOS

Simple ON/OFFVapc Peripheral Control circuit circuitry Control signal Vapc Negative voltage DC/DC converter OP-amp Control signal MOSFET Module GaAs FET Module,

RF Module Full Road Map Dual-band

Land Production Mobile L2 PF0310 PF0347 PF0390 Radio PF0340 PF0346 PF0312 K, M-PKG

PDC GaAs PF5580B PF55150B CDMA PF5xxB TDMA PF0210 PF0231 PF0231A PF0xxB PCN L2 PF0412 PF0414A PF0414B PCS (1.3 um modify)

PF0413 PF0415B IntegrationPF0415A of PF0150 PF0143 PF0146 PF0148 functionsPF01412A PA+APC PF0140 PF0141 PF0144 PF0145 PF0147 PF01411A PA+APC

GSM PF01411B

PF1003/7 PF0120 PF01410A Dual-band

L3 GSM/PCN

PF1002 PF0130/31 PF0121 (0.8 u m) L4 A (0.5 u m) GSM/PCNL4 B

L1 (0.4 u m) AMPS (1.3 um) PF0045A/65A PF00105A TACS PF0075A NMT PF0015 PF0025 PF0045/65 J- Higher efficiency, Small PKG PF0049A TACS PF0010/20 PF0030/40

89 90 91 92 93 94 95 96 97 98 99 2000

Cellular Others Analog Digital Expand Applications

,

PHEMT Power Amplifier

Advanta ges : •InGaAs Pseudomorphic HEMT •High Efficiency •Low Voltage Operation •High Gain •High Linearity,

C oncept of Built-in Bias Circuit PCS CDMA InGaAs Power Module High EfficiencyPseudomorphic

HEMT Low Voltage OperationG687Bias Current adjusted by Automatic Control System34Good Stability for Temp, VddG12

ABC-IC

(Automatic Bias-voltage Negative Voltage Gen. 1: Vcc 6: GND Controller) Single Positive Supply 2: Pin 7: Icont 3: Vdd1 8: NC 4: Vdd2 G: GND Small and Thin 5: Pout Package(~0.15cc),

RF Power Modules Lineup

Part No. Cellular Standard Frequency (MHz) Input Power Output Supply Efficiency Technology Package (mW) Power (W) (V) (% typ) PF0030 AMPS 824 - 849 2.0 6.0 12.5 40 MOSFET B2 PF00105A AMPS 824 - 849 5.0 1.0 4.6 48 MOSFET K (0.2cc) PF00115B AMPS 824 - 849 1.0 1.2 3.6 55 MOSFET K (0.2cc) PF01410A GSM 890 - 915 6.5 2.8 4.8 45 MOSFET K (0.2cc) PF01411A E-GSM 880 - 915 1.0 3.8 4.8 45 MOSFET K (0.2cc) PF01411B E-GSM 880 - 915 1.0 3.5 3.5 45 MOSFET K (0.2cc) PF0210 ADC/IS-54 824 - 849 2.0 6.0 12.5 34 MOSFET B2 PF0231A ADC/IS-54 824 - 849 1.0 1.2 4.8 42 MOSFET E (1.0cc) PF0414A DCS1800 1710 - 1785 2.0 1.8 4.8 45 MOSFET K (0.2cc) PF0415A PCS 1900 1850 - 1910 2.0 2.4 4.8 45 MOSFET K (0.2cc) PF57191B PCS 1900 1850 - 1910 5.0 0.63 3.5 40 PHEMT M (0.15cc),

RF SOLUTION for GSM/PCN

Smaller, High Performance & Lower Power,

RF SOLUTION FOR GSM

Highly Integrated Tranceiver IC - HD155121F for Dual Band GSM, ? RF Integration / Transceiver Advantages: • 2 Chip Solution for RF – Reduce Mounting Space • Low Supply Voltage – 3.0V Operation Possible • Offset PLL Achitecture – Eliminate External Filter Requirement – Eliminate Duplexer Requirement – Reduce Mounting Space – Reduce Power Consumption • Less Loss through Filter and Duplexer – Utilize PA with Lower Pout, ? RF Linear IC Evolution for GSM/PCN '96 '97 '98 '99

BRIGHT for GSM Single Band

45MHz Feature of BRIGHT, BRIGHT-HF, BRIGHT-II 225MHz LC 925~960MHz RF IF I • 2 chip solution for RF LNA SAW AGC I&QSAW filter Demo.filter Q • Reduce Duplexer by TX architecture RF biascircuit 45MHz : Offset Phase Lock Loop filter 270MHz 1150~ 90deg TCXO 1185 RF VCO Shift • Low power consumption MHz 540MHz ÷2 HD155101BF ÷2 IFVCO • Well system tested by System evaluation boardB.B. Dual Block synth. PLL1 PLL2 ÷6 HD155017T 90deg LPF Shift ÷2 270MHz 270MHz PA Module 270MHz Loop Phase I&Q I filter Detector Mod Q BRIGHT-II buffer 880~915MHz Transceiver IC for CMOS

WS: '97/9 GSM /PCN Dual band phone Using BRIGHT/ BRIGHT-HF BRIGHT-HF High Performance and

for GSM single band well system tested architecture

Under development Other Systems Plan

,

Features of HD155101BF

45MHz 225MHz LC 925~960MHz RF IF LNA SAW AGC I&Q

I SAW

filter Demo.filter Q RF biascircuit 45MHz filter 270MHz 90deg TCXO 1150~ RF VCO Shift 1185 540MHz ÷2 HD155101BF ÷2 MHz IFVCO B.B. Dual PLL1 PLL2 Block synth. ÷6

HD155017T

90deg LPF Shift ÷2 270MHz 270MHz

PA Module 270MHz

Loop Phase I&Q I filter Detector Mod Q buffer 880~915MHz

Configuration of HD155101BF for GSM

,

GaAs MMIC

Higher Performance & Smaller,

GaAs MMIC Chip Set Lineup

Type No. Function Features LNA • Low noise NF = 1.9 dB typ (at 3 V, 3 mA, 1.9GHz) HA22012 (Low Noise Amp) • High gain PG = 14.5 dB typ (at 3 V, 3 mA, 1.9GHz) • Package MPAK-5 LNA • Low noise NF = 1.3 dB typ (at 3 V, 3 mA, 1.5GHz) HA22022 (Low Noise Amp) • High gain PG = 16 dB typ (at 3 V, 3 mA, 1.5GHz) • Package MPAK-5 • Low noise NF = 7 dB typ (at 3 V, 5.3 mA, 1.9GHz) Down converter HA22003T • High gain CG = 8.5 dB typ (at 3 V, 5.3 mA, 1.9GHz) with Built-in local buffer • Third order intercept point IP3out = +6.5 dBm typ • Package TSSOP-14

Underdevelopment

HA22032 LNA + Up converter • PDC use • Package TSSOP-8 4-1,

RF Power MOSFET

Higher Performance & Various Package Lineup,

RF Power MOSFET Product Map

220W/80V RFPAK-B 2SK1575 Part # 200 2SK410 175W/60V 2SK1999 140W/28V Po / VDD2SK2216 180W/80V RFPAK-B RFPAK-B RFPAK-A 2SK2217 70W/28V50 RFPAK-C Max. 20 Output 2SK408 TO-220AB RFPAK-A Power 2SK409 10 16W/60V 2SK2595 7W/12V RP8P Po TO-220AB (W) 5 1.6W/4.7V RFPAK-B RFPAK-C 2 2SK2794 RP8P 2SK2596 1.4W/12V 1 UPAK 0.5 0.34W/4.7V RP8P UPAK 2SK2795 UPAK 0.2 0.1 10 20 50 100 200 500 1000 2000 5000 Recommended frequency f (MHz),

New RF Power MOSFET Under Development Feature : High gain, High Efficiency, High Power

P/N 2SK3170 2SK3171 2SK3172 2SK3173 2SK3174 2SK3175 Frequency (Hz) 2.2 GHz 2.2 GHz 1.96 GHz 1.96 GHz 860 MHz 860 MHz Pout (W) 120 60 130 70 280 140 P1dB (W) 100 50 110 60 190 100 Effd (%) 44 41 47 46 68 68 PG @P1dB (dB) 12 12 11.5 12.5 15.5 15 Package RFPAK-F RFPAK-G RFPAK-F RFPAK-G RFPAK-F RFPAK-G WS Dec/98 Jan/99 Dec/98 Jan/99 Sep/98 Jan/99 MP 1Q/99 2Q/99 1Q/99 2Q/99 Dec/98 2Q/99 All characteristics may change without notice,

Discrete Devices

• GaAs MESFET/HEMT • Bipolar Transistor • Diode • MOSFET for Power Switch 5-4,

HEMT & MESFET

Application : Low Noise Amplifier Product Structure Outline Feature Single-gate • Ultra low noise & high gain2SK3001 HEMT CMPAK-4 NF=1.1dB, G=18dB typ. at 2GHz • Ultra low noise & high gain 2SK2685 Single-gate HEMT CMPAK-4 NF=0.6dB, G=19dB typ. at 900MHz • Supply voltage ; 1 to 5V 3SK239A Dual-gate CMPAK-4 • Low noise MESFET NF=1.2dB typ. at 900MHz • Low noise 3SK309 Dual-gate MESFET CMPAK-4 NF=1.2dB typ. at 900MHz • Supply voltage ; 1.5 to 3V,

High Frequency Bipolar Transistor Lineup

Series Name MPAK CMPAK MPAK-4 CMPAK-4 SMPAK fT(GHz) Conditions 2SC4791 2SC5049 2SC4784 2SC4791 2SC5137 10.0 5V, 5mA 2SC4899 2SC4899 2SC5140 9.6 5V, 10mA 2SC4900 2SC4901 2SC4900 9.0 5V, 20mA 2SC4903 2SC4902 2SC4903 2SC5138 6.0 5V, 10mA 2SC4926 2SC5050 2SC5051 2SC4926 2SC4995 2SC5139 11.0 5V, 20mA 2SC4993 2SC4993 2SC4994 10.5 5V, 10mA 2SC5078 2SC5078 2SC5079 2SC5246 12.5 5V, 7mA 2SC5080 2SC5080 2SC5081 2SC5247 13.5 5V, 20mA,

Varicap & PIN Diodes

Application Market Needs Device Development • Mobile Phone • Low Voltage • Improvement of Varicap for VCO • Cellular Phone • Digital (~2GHz) • PIN diodes for antenna switch • Cordless Phone • Small Outline • Schottky Diodes for Double Balanced Mixer • Pager • Small Outline Package (UFP) Application Outline P/N Note VCO URP HVU350B/351/357/358 f=~900MHz Varicap HVU355 f=1GHz~ UFP HVC350B/351/357/369B 1608flat package VCXO URP HVU359/HVU362 VCXO Varicap HVU17 VCXO UFP HVC359/362/365 1608flat package Mixer URP HSU276 Single Mixer (RF detection use) Schottky HSU88 Single Mixer (RF detection use) UFP HSC276 1608 flat package (RF detection use) Antenna switch MPAK HVM187WK/187S Attenuator Attenuator HVM14S/SR Attenuator (Low Capacitance) PIN CMPAK HVB14S Attenuator (Low Capacitance) URP/ HVU131/HVC131 Antenna switch UFP HVU132/HVC132 Antenna switch HVU133/HVC133 Antenna switch MPAK HVM132 Antenna switch HVM132WK Antenna switch HVM131S/SR Antenna switch,

Si PIN Diode for Antenna Switch Features :

• Lower cost than GaAs MMIC, SAW duplexer • Low loss • Larger isolation HVC131/132/133 HVM132 HVM132WK HVM131S HVM131SRHVU131/132/133 • Small Package RF Resistance(rf) Capacitance Product Outline NoteOhm (Max) Condition pF(Max) Condition HVC131 UFP 1.0 IF=10mA 0.8 VR=1V HVC132 UFP 2.0 IF=10mA 0.5 VR=1V HVC133 UFP 0.7 IF=2mA 1.0 VR=1V HVU131 URP 1.0 IF=10mA 0.8 VR=1V HVU132 URP 2.0 IF=10mA 0.5 VR=1V HVU133 URP 0.7 IF=2mA 1.0 VR=1V HVM131S MPAK 1.0 IF=10mA 0.8 VR=1V Series connection HVM131SR MPAK 1.0 IF=10mA 0.8 VR=1V Series connection HVM132 MPAK 2.0 IF=10mA 0.5 VR=1V HVM132WK MPAK 2.0 IF=10mA 0.5 VR=1V Cathode common]
15

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