Download: Overview of RF/Wireless ICs RF Power Amplifier Module Nomenclature Hitachi offers silicon solutions for international wireless communication standards, including

Overview of RF/Wireless ICs RF Power Amplifier Module Nomenclature Hitachi offers silicon solutions for international wireless communication standards, including cellular AMPS, CDPD, ETACS, IS.136 TDMA and GSM. To enable our customers to produce PF XXXXX X - XX innovative wireless designs, we provide industry-leading embedded controllers and MOSFET power amplifier products, as well as products such as PLL synthesizers, LNA/mixers, MMICs, Hitachi Power power management switches, LCD controller/drivers and low-noise, high-frequency transistors. Amplifier Module We also offer memory products such...
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Overview of RF/Wireless ICs RF Power Amplifier Module Nomenclature

Hitachi offers silicon solutions for international wireless communication standards, including cellular AMPS, CDPD, ETACS, IS.136 TDMA and GSM. To enable our customers to produce PF XXXXX X - XX innovative wireless designs, we provide industry-leading embedded controllers and MOSFET power amplifier products, as well as products such as PLL synthesizers, LNA/mixers, MMICs, Hitachi Power power management switches, LCD controller/drivers and low-noise, high-frequency transistors. Amplifier Module We also offer memory products such as SRAM, Flash (devices and cards), and EEPROM. Leading suppliers of cellular “smart phones” and two-way messaging chipsets use Hitachi’s H8 series and SuperH RISC series embedded controllers and microprocessors for improved system Module series performance/cost, lower power dissipation, and enhanced functional integration. Voltage Blank = 12.5V A = 4.8V B = 3.6V Customer-specific (default is blank) RF/Wireless Components & ICs, 1.5 5 – 3.0 3.4 0±.15 5.6 +0.7–0.5 2.0 Max 1.0 1.1 0.3 3.7 ±0.5 5.8 8.8 2.35 ±0.5 12 ±0.5 5.0 + 0.6– 0.3 12.7 ±0.5 2.3 11.0 ±0.3 0 - 0.10 0.25 0.3 0±.15 0.9 0±.15 1.25 0±.15 5 ± 1 3.3 6.35 ±0.5 3.7 3.7 0 - 0.10 0.3 0±.15 0.9 0±.15 1.25 0±.15 2.1 2.1 0.6 0.425 1.25 ±0.1 0.65 0.650.425 1.5 0±.15 0.4 0.8 ±0.1 0.4 2.8 + 0.2– 0.6 1.6 ±0.2 2.1 ±0.3 0.2 0.55 0.9 ± 0.1 0.7 ±0.1 0.425 1.25 ± 0.1 0.425 2.1 ±0.3 (0.6) 1.6 + 0.2– 0.1 (0.6) 2.8 + 0.2 0.8 Min 2.5 ±0.1 0.4 0.2 – 0.3 4.25 Max 0.9 ± 0.1

RF/Wireless Component Packaging RF-E RF-B2 RF-K SMPAK UPAK

(Surface Mount, Shielded) (Plastic Power Package) (0.2CC Small Package) (Super Mini Package) (Uni-watt Package) 4.5 ±0.1G31.6 ± 0.2 +0.1 1.8 Max0.15 –0.05 0.3 +0.1–0.05G20– 0.1f131.5 ±0.1 25 ±0.5 1 0.44 Max 1.5 22 ±0.5 1.5 60.5 ±0.5 9.6 0.53 Max 57.5 ±0.5 R1.61G2G210.48 Max 0.2 +0.1 0.2 +0.1 1.5 1.5–0.05 –0.05 0.5 0.5 3.0 1.0 ± 0.112340.44 Max12340.5 0.3 0.254G3G1.8 5.1 7.6 5.1 49.8 ±0.5 1.8 1.31.8 1.61.8 1.31.8 MPAK MPAK-5 2.225 2.97 (Mini Package) (Mini Package) 9.2 ± 1 6.875 6.875 1.9 13.0 ± 1 8.0 ± 1 2.4 0.5 0.4 + 0.10 13.75 ±0.3 – 0.0522.0 ±1 (0.95) (0.95) 0.16+ 0.10– 0.06 0.16 + 0.1– 0.05

RP8P 0 – 0.1 0 – 0.10URP UFP

(RF Power Package) (Ultra-small 0.95 0.95(Ultra-small Resin Package) Flat Package) 1.9 0.4 ±0.1 2.8 + 0.3– 0.1 4.5 Max 0.8 ±0.2 2.9 ±0.2

CMPAK CMPAK-4

(Compact Mini Package) (Mini Package) 1.7 0±.15 + 0.1 2.0 ±0.21.7 0±.15 0.3– 0.05 2.5 0±.15 1.3 ±0.22.5 0±.15 5.2 0±.15 0.65 0.65 1.325 0±.15 0.3 + 0.1 + 0.12.54 ± 0.2 – 0.05 0.3– 0.05 0.3+ 0.1– 0.05 0.2 0.650.65 0.3 + 0.1– 0.05 0.4+ 0.1 ± – 0.051.3 0.2 0.65 0.6 0.5+0.1–0.05 0.16 +0.1 –0.06 2.0 ±0.2 1.25 ±0.2, MOSFET Power Amplifiers for Base Stations Part No. Frequency (MHz) Supply (V) Pout (Watts) Gain (dB) Efficiency (%) Package 2SK2216 860 28 140 9.7 55 RFPAK-B 2SK2595 836 12 7.0 7.8 60 RP8P 2SK2596 836 12 1.4 12.2 55 UPAK 2SK3170 2200 28 120 12 44 RFPAK-F 2SK3171 2200 28 60 12 41 RFPAK-G 2SK3172 1960 28 130 11.5 47 RFPAK-F 2SK3173 1960 28 70 12.5 46 RFPAK-G 2SK3174 860 28 280 15.5 68 RFPAK-F 2SK3175 860 28 140 15 68 RFPAK-G Power Modules for Handsets Part No. Cellular Standard Frequency (MHz) Input Power (mW) Output Power (W) Supply (V) Efficiency (% typ.) Technology Package PF0030 AMPS 824 - 849 2.0 6.0 12.5 40 MOSFET RF-B2 PF00105A AMPS 824 - 849 5.0 1.0 4.6 48 MOSFET RF-K (0.2cc) PF01411A E-GSM 880 - 915 1.0 3.8 4.8 45 MOSFET RF-K (0.2cc) PF01411B E-GSM 880 - 915 1.0 3.5 3.5 45 MOSFET RF-K (0.2cc) PF0210 ADC/IS-54 824 - 849 2.0 6.0 12.5 34 MOSFET RF-B2 PF0231A ADC/IS-54 824 - 849 1.0 1.2 4.8 42 MOSFET RF-E (1.0cc) PF0414A DCS1800 1710 - 1785 2.0 1.8 4.8 45 MOSFET RF-K (0.2cc) PF0415A PCS 1900 1850 - 1910 2.0 2.4 4.8 45 MOSFET RF-K (0.2cc) PF04115B PCS 1900 1850 - 1910 1.0 2.0 3.5 42 MOSFET RF-K (0.2cc) PF008103A E-GSM/DCS1800 880-915 / 1710-1785 2.0 / 2.0 3.7 / 2.0 4.8 48 / 40 MOSFET RF-O (0.27cc) PF008103B E-GSM/DCS1800 880-915 / 1710-1785 3.0 / 3.0 4.0 / 2.0 3.5 45 / 35 MOSFET RF-O (0.27cc) PF57191B PCS 1900 1850 - 1910 5.0 0.63 3.5 40 PHEMT RF-M (0.15cc), SAW Filters Attenuation (dB typ.) Part No. Cellular Standard Center Frequency (MHz) Bandwidth (MHz) Insertion Loss (dB typ.) Lower Side Upper Side HWCA103 ETACS-TX 888.5 33 5.0 40 45 HWCB103 ETACS-RX 933.5 33 5.0 45 38 HWCA102 ETACS-TX 888.5 33 4.0 30 35 HWCB105 ETACS-RX 933.5 33 4.0 20 32 HWYN201 GSM/NMT-duplexer 902.5; 947.5 25 1.6 / 3.5 HWYN202 GSM/NMT-duplexer 902.5; 947.5 25 1.3 / 2.8 HWCA208 GSM/NMT-TX 902.5 25 2.5 25 30 HWCB208 GSM/NMT-RX 947.5 25 3.0 28 30 HWCA602 AMPS-TX 836.5 25 4.5 42 40 HWCB602 AMPS-RX 881.5 25 5.0 45 45 HWCA606 AMPS-TX 836.5 25 3.0 25 30 HWCA613 AMPS-TX 836.5 25 3.0 22 26 HWCB613 AMPS-RX 881.5 25 3.5 28 24 HWCE601 Pager 930.0 4 5.0 45 45 GaAS MMIC Noise (dB) @ Gain (dB)/ Package Type Part No. Function Supply (V) Current ( mA) Frequency (GHz) Frequency (GHz) (MPAK) HA22012 LNA (Internal Match) 3 3 1.9/1.9 13.5/1.9 5 HA22022 LNA (External Match) 3 3 1.3/1.5 16.0/1.5 5 RF Integration Package Type Part No. Standard Functions (QFP) HD155101BF E-GSM Includes 1st, 2nd mixer, IF AMP, AGC Amp, I/Q demod, I/Q mod, TX VCO driver, IF drivers 48 HD155121F E-GSM/DCS1800 48, Discrete Transistors Part No. Device Supply (V) Current (mA) fT (GHz) NF (dB) @Freq. (MHz) Gain (dB) @Freq. (MHz) Package 2SC5136 Bipolar transistor 5 20 3.8 2.5 / 900 SMPAK 2SC4807 Bipolar transistor 5 100 4.4 2.5 / 900 UPAK 2SC3127 Bipolar transistor 5 20 4.5 2.2 / 900 MPAK 2SC5141 Bipolar transistor 5 20 5.8 1.6 / 900 SMPAK 2SC5138 Bipolar transistor 5 10 6.0 1.8 / 900 SMPAK 2SC4537 Bipolar transistor 5 20 6.0 1.6 / 900 CMPAK 2SC5140 Bipolar transistor 5 10 9.0 1.6 / 900 SMPAK 2SC4593 Bipolar transistor 5 20 9.0 1.2 / 900 CMPAK 2SC4901 Bipolar transistor 5 20 9.0 1.2 / 900 CMPAK 2SC4784 Bipolar transistor 5 10 10.0 1.2 / 900 CMPAK 2SC5137 Bipolar transistor 5 10 10.0 1.5 / 900 SMPAK 2SC4994 Bipolar transistor 5 10 10.5 1.2 / 900 CMPAK-4 2SC5051 Bipolar transistor 5 20 11.0 1.1 / 900 CMPAK 2SC4995 Bipolar transistor 5 20 11.0 1.1 / 900 CMPAK-4 2SC5139 Bipolar transistor 5 20 11.0 1.1 / 900 SMPAK 2SC5079 Bipolar transistor5712.5 1.6 / 900 CMPAK-4 2SC5246 Bipolar transistor5712.5 1.6 / 900 SMPAK 2SC5081 Bipolar transistor 5 20 13.5 1.1 / 900 CMPAK-4 2SC5247 Bipolar transistor 5 20 13.5 1.2 / 900 SMPAK 2SK2685 GaAs HEMT LNA 3 10 0.83 / 2000 17 / 2000 CMPAK-4 2SK3001 GaAs HEMT LNA350.75 / 1800 16 / 1800 CMPAK-4 3SK228 Dual-Gate GaAs MESFET 5 10 1.3 / 900 20 / 900 MPAK 3SK239A Dual-Gate GaAs MESFET 5 10 1.3 / 900 19 / 900 CMPAK-4 3SK309 Dual-Gate GaAs MESFET351.25 / 900 21 / 900 CMPAK-4, Diodes Part No. Device C1 (pF) C2 (pF) C3 (pF) C4 (pF) C10 (pF) C ratio (min.) RS (Ω) VR (V) Package HVM132 PIN diode 0.5 2.0 Max @10mA 60 MPAK HVM132WK PIN diode 0.5 2.0 Max @10mA 60 MPAK HVU131 PIN diode 0.8 1.0 Max @10mA 60 URP HVU132 PIN diode 0.5 2.0 Max @10mA 60 URP HVU133 PIN diode 1.0 0.7 Max @2mA 15 URP HVU17 VariCap diode 50.0-85.0 16.1-27.3 5.23-8.84 5.6 Q=50 min. 15 URP HVU350B VariCap diode 15.0-17.5 5.3-6.3 2.8 0.5 Max 15 URP HVU351 VariCap diode 14.0-16.0 5.0-6.5 2.0 0.35 Max 10 URP HVC351 VariCap diode 14.0-16.0 5.0-6.5 2.0 0.35 Max 10 UFP HVU355B VariCap diode 6.4-7.2 2.55-2.95 2.2 0.6 Max 15 URP HVC355B VariCap diode 6.4-7.2 2.55-2.95 2.2 0.6 Max 15 UFP HVU356 VariCap diode 27.7-31.8 21.6-25.6 17.1-21.2 1.45 0.6 Max 15 URP HVU357 VariCap diode 19.5-23.5 14.3-17.6 1.3 0.35 Max 10 URP HVU358 VariCap diode 19.0-21.0 8.5-10.0 2.0 0.4 Max 15 URP HVU359 VariCap diode 24.8-29.8 6.0-8.3 3.0 1.5 Max 15 URP HVC359 VariCap diode 24.8-29.8 6.0-8.3 3.0 1.5 Max 15 UFP]
15

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