Download: Chip tantalum capacitors with built–in open–function TCFG series
Tantalum capacitors Chip tantalum capacitors with built–in open–function TCFG series Semiconductor manufacturing technology has been used to include a temperature fuse in TCFG series capacitors. These capacitors feature low impedance and are ideal for digital circuits and low–voltage circuits in portable electronic equip- ment. Features 1) Open–function built into every package. 2) High capacitance in a small package. 3) Low impedance. 4) Use of semiconductor manufacturing technology provides high reliability. 5) Superb solderability. External dimensions (mm) Product designation · When orderin...
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Tantalum capacitors
Chip tantalum capacitors with built–in
open–functionTCFG series
Semiconductor manufacturing technology has been used to include a temperature fuse in TCFG series capacitors. These capacitors feature low impedance and are ideal for digital circuits and low–voltage circuits in portable electronic equip- ment. Features 1) Open–function built into every package. 2) High capacitance in a small package. 3) Low impedance. 4) Use of semiconductor manufacturing technology provides high reliability. 5) Superb solderability. External dimensions (mm), Product designation · When ordering, please specify the part No. · Please check to be sure of what combination of features you wish to order. · Fill in the blanks from left to right. Capacitance range, Characteristics, Table 1 Standard parts list, TCFG series, Packaging specifications Packaging style, Electrical characteristics and operation notes (1) Soldering conditions (soldering temperature and soldering time) (2) Leakage current–to–voltage ratio, (3) Derating voltage as function of temperature (4) Reliability The malfunction rate of tantalum solid state electrolytic capacitors varies considerably depending on the condi- tions of usage (ambient temperature, applied voltage, cir- cuit resistance). Formula for calculating malfunction rateλp= λ b (πEπSRπQπCV) λ p : Malfunction rate stemming from operationλb: Basic malfunction rateπE: Environmental factorsπSR: Series resistanceπQ: Level of malfunction rateπCV: Capacitance For details on how to calculate the malfunction rate stem- ming from operation, see the tantalum solid state electro- lytic capacitors column in MIL–HDBK–217. Malfunction rate as function of operating Malfunction rate as function of circuit resistance (Ω/V) temperature and rated voltage, (5) External temperature vs. fuse blowout (6) Power vs. fuse blowout characteristics / Product sur- face temperature Note: Solder the chip at 300C or less. If it is soldered using a temper- ature higher than 300C, the built–in temperature fuse may blow out. (7) Maximum power dissipation Notes: Warming of the capacitor due to ripple voltage balances 1. Please be aware that when case size is changed, maxi- with warming caused by Joule heating and by radiated mum allowable power dissipation is reduced. heat. Maximum allowable warming of the capacitor is to 2. Maximum power dissipation varies depending on the 5C above ambient temperature. When warming exceeds package. Be sure to use a case which will keep warming 5C, it can damage the dielectric and cause a short circuit. within the limits shown in the table below. Power dissipation (P) =I2 R Ripple current P: As shown in table at right R: Equivalent series resistance (8) Impedance frequency characteristics (9) ESR frequency characteristics, (10) Temperature characteristics, (11) Ultrasonic cleaning Carry out cleaning under the mildest conditions possible. Example: water The internal element of a tantalum capacitor are larger Propagation speed 1500 m/s than those of a transistor or diode, so it is not as resistant Solvent density 1g/cm3 to ultrasonic waves. Design G dimension : 150µm or less Precautions 1) Do not allow solvent to come to a boil (kinetic energy increases). ⋅ Ultrasonic output 0.5W/cm2 or less ⋅ Use a solvent with a high boiling point. ⋅ Lower solvent temperature. 2) Ultrasonic cleaning frequency 28 kHz or less 3) Keep cleaning time as short as possible. 4) Move item being cleaned. Standing waves caused by the ultrasonic waves can cause stress to build up in part of the item being cleaned. Reference Kinetic energy = 2xπxfrequencyx2xultrasonic output propagation speed x solvent density]15
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