Download: KIT EVALUA TION HEET FOLLOW General Description Features
19-1384; Rev 1; 2/99 KIT EVALUA TION DATA S HEET FOLLOW S 400MHz to 2500MHz SiGe General Description Features The MAX2640/MAX2641 are low-cost, ultra-low-noise ♦ Wide Operating Frequency Range amplifiers designed for applications in the cellular, PCS, MAX2640: 400MHz to 1500MHz GPS, and 2.4GHz ISM frequency bands. Operating from MAX2641: 1400MHz to 2500MHz a single +2.7V to +5.5V supply, these devices consume only 3.5mA of current while providing a low noise fig- ♦ Low Noise Figure ure, high gain, high input IP3, and an operating fre- MAX2640: 0.9dB at 900MHz quency range that extends from 400...
Author:
Richard Shared: 7/30/19
Downloads: 974 Views: 2941
Content
19-1384; Rev 1; 2/99
KIT EVALUA TION
DATA SHEET FOLLOW
S 400MHz to 2500MHz SiGeGeneral Description Features
The MAX2640/MAX2641 are low-cost, ultra-low-noise ♦ Wide Operating Frequency Range amplifiers designed for applications in the cellular, PCS, MAX2640: 400MHz to 1500MHz GPS, and 2.4GHz ISM frequency bands. Operating from MAX2641: 1400MHz to 2500MHz a single +2.7V to +5.5V supply, these devices consume only 3.5mA of current while providing a low noise fig- ♦ Low Noise Figure ure, high gain, high input IP3, and an operating fre- MAX2640: 0.9dB at 900MHz quency range that extends from 400MHz to 2500MHz. MAX2641: 1.2dB at 1575MHz The MAX2640 is optimized for 400MHz to 1500MHz 1.3dB at 1900MHz applications, with a typical performance of 15.1dB gain, 1.5dB at 2450MHz input IP3 of -10dBm, and a noise figure of 0.9dB at ♦ High Gain 900MHz. The MAX2641 is optimized for 1400MHz to MAX2640: 15.1dB at 900MHz 2500MHz applications, with a typical performance of MAX2641: 15.7dB at 1575MHz 14.4dB gain, an input IP3 of -4dBm, and a noise figure 14.4dB at 1900MHz of 1.3dB at 1900MHz. 13.5dB at 2450MHz These devices are internally biased, eliminating the ♦ High Reverse Isolation need for external bias resistors and chokes. In a typical MAX2640: 40dB at 900MHz application, the only external components needed are a two-element input match, input and output blocking MAX2641: 31dB at 1575MHz capacitors, and a VCC bypass capacitor. 30dB at 1900MHz 24dB at 2450MHz The MAX2640/MAX2641 are designed on a high-fre- quency, low-noise, advanced silicon-germanium ♦ +2.7V to +5.5V Single-Supply Operation process and are offered in the space-saving 6-pin ♦ Low 3.5mA Supply Current SOT23 package. ♦ Ultra-Small SOT23-6 PackageApplications Ordering Information
400MHz/900MHz/2.4GHz ISM Radios Cellular/PCS Handsets TEMP. PIN- SOTPART RANGE PACKAGE TOP MARK GPS Receivers MAX2640EUT-T -40°C to +85°C 6 SOT23-6 AAAV Cordless Phones MAX2641EUT-T -40°C to +85°C 6 SOT23-6 AAAW Wireless LANs Pin Configuration appears at end of data sheet. Wireless DataTypical Operating Circuits VCC
C4 C3 VCC C1 C2 C3 C4 FREQUENCY (MHz) Z1* ZM1VALUE VALUE VALUE VALUE VALUE VALUE ZM2 BIAS GENERATOR MAX2640 MAX2641 (pF) (pF) (pF) (pF) (nH) (pF) VALUE C1 RFIN Z1 C2 RF OUT 900 — 470 3 470 — 9.85 2 —LNA
RFIN RF OUT — 1575 100 100 470 — 5.6 1 6.8nH ZM1 ZM2 MAX2640/1 — 1900 470 100 470 — 2.55 1 1pF — 2450 470 100 470 100 1.65 1 1pF GND *The series inductor Z1 can be replaced by a transmission line of appropriate impedance and electrical length. _ Maxim Integrated Products 1For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800. For small orders, phone 1-800-835-8769.
,ABSOLUTE MAXIMUM RATINGS
VCC to GND ...-0.3V to +6V Operating Temperature Range ...-40°C to +85°C RFIN Power (50Ω source) (Note 1) ...+5dBm Maximum Junction Temperature ...+150°C Continuous Power Dissipation (TA = +70°C) Storage Temperature Range ...-65°C to +160°C SOT23-6 (derate 8.7mW/°C above +70°C)...696mW Lead Temperature (soldering, 10sec) ...+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 1: Pin must be AC-coupled with a DC blocking capacitor.DC ELECTRICAL CHARACTERISTICS
(VCC = +2.7V to +5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.0V, TA = +25°C.) PARAMETER CONDITIONS MIN TYP MAX UNITS Operating Supply Voltage 2.7 5.5 V TA = +25°C 3.5 4.7 Operating Supply Current mA TA = -40°C to +85°C 6.4RF ELECTRICAL CHARACTERISTICS
(VCC = +3.0V, PRFIN = -34dBm, ZO = 50Ω, TA = +25°C, unless otherwise noted.) (Notes 2 and 3) PARAMETER CONDITIONS MIN TYP MAX UNITS MAX2640 (fRFIN = 900MHz) RFIN Frequency Range 400 1500 MHz Gain 12.8 15.1 dB Gain Variation Over Temperature TA = TMIN to TMAX 0.6 1.7 dB Noise Figure (Note 4) 0.9 1.1 dB Input Return Loss -11 dB Output Return Loss -14 dB Reverse Isolation 40 dB Input 1dB Gain Compression Point -22 dBm Input Third-Order Intercept Point (Note 5) -10 dBm MAX2641 (fRFIN = 1900MHz) RFIN Frequency Range 1400 2500 MHz Gain 12.4 14.4 dB Gain Variation Over Temperature TA = TMIN to TMAX 0.9 2.4 dB Noise Figure (Note 4) 1.3 1.5 dB Input Return Loss -12 dB Output Return Loss -12 dB Reverse Isolation 30 dB Input 1dB Gain Compression Point -21 dBm Input Third-Order Intercept Point (Note 6) -4 dBm 2 _,RF ELECTRICAL CHARACTERISTICS (continued)
(VCC = +3.0V, PRFIN = -34dBm, ZO = 50Ω, TA = +25°C, unless otherwise noted.) (Notes 2 and 3) PARAMETER CONDITIONS MIN TYP MAX UNITS MAX2641 (fRFIN = 1575MHz) Gain 15.7 dB Noise Figure (Note 4) 1.2 dB Input Return Loss -8 dB Output Return Loss -15 dB Reverse Isolation -31 dB Input 1dB Gain Compression Point -21 dBm Input Third-Order Intercept Point (Note 7) +1.4 dBm MAX2641 (fRFIN = 2450MHz) Gain 13.5 dB Noise Figure (Note 4) 1.5 dB Input Return Loss -10 dB Output Return Loss -11 dB Reverse Isolation -24 dB Input 1dB Gain Compression Point -19 dBm Input Third-Order Intercept Point (Note 8) -2.5 dBm Note 2: Guaranteed by design and characterization. Note 3: Measured using typical operating circuit. Input and output impedance matching networks were optimized for best simulta- neous gain and noise-figure performance. Note 4: External component and circuit losses degrade noise-figure performance. Specification excludes external component and circuit board losses. Note 5: Measured with two input tones, f1 = 899MHz, f2 = 901MHz, both at -34dBm per tone. Note 6: Measured with two input tones, f1 = 1899MHz, f2 = 1901MHz, both at -34dBm per tone. Note 7: Measured with two input tones, f1 = 1574MHz, f2 = 1576MHz, both at -34dBm per tone. Note 8: Measured with two input tones, f1 = 2449MHz, f2 = 2451MHz, both at -34dBm per tone.Typical Operating Characteristics
(VCC = +3V, PRFIN = -34dBm, Typical Operating Circuits, TA = +25°C, unless otherwise noted.) MAX2640 MAX2640 MATCHED AT 900MHz MAX2640 MATCHED AT 900MHz SUPPLY CURRENT vs. SUPPLY VOLTAGE GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 6 16 3 TA = -40°C TA = +85°C 15 TA = +85°C42TA = +25°C TA = +25°C 3 TA = -40°C 14 TA = +85°C TA = +25°C2113 TA = -40°C 0 12023456800 840 880 920 960 1000 800 840 880 920 960 1000 VCC (V) FREQUENCY (MHz) FREQUENCY (MHz) _ 3 ICC (mA) MAX2640-01 GAIN (dB) MAX2640-01 NOISE FIGURE (dB) MAX2640-03,Typical Operating Characteristics (continued)
(VCC = +3V, PRFIN = -34dBm, Typical Operating Circuits, TA = +25°C, unless otherwise noted.) MAX2640 MATCHED AT 900MHz INPUT RETURN LOSS AND MAX2640 MATCHED AT 900MHz MAX2641 OUTPUT RETURN LOSS vs. FREQUENCY REVERSE ISOLATION vs. FREQUENCY SUPPLY CURRENT vs. SUPPLY VOLTAGE -606-7 -8 -10 5 -9 TA = +85°CINPUT RETURN LOSS -20 4 -10 TA = +25°C -11 -30 3 TA = -40°C -12 -13 -40 2 -14 -50 1 -15 OUTPUT RETURN LOSS -16 -60 0 800 850 900 950 1000 800 840 880 920 960 100023456FREQUENCY (MHz) FREQUENCY (MHz) VCC (V) MAX2641 MATCHED AT 1900MHz MAX2641 MATCHED AT 1900MHz GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 16 3 TA = -40°C 15 TA = +85°C 14 TA = +25°C TA = +85°C TA = +25°C 1 13 TA = -40°C 12 0 1800 1840 1880 1920 1960 2000 1800 1840 1880 1920 1960 2000 FREQUENCY (MHz) FREQUENCY (MHz) MAX2641 MATCHED AT 1900MHz INPUT RETURN LOSS AND MAX2641 MATCHED AT 1900MHz OUTPUT RETURN LOSS vs. FREQUENCY REVERSE ISOLATION vs. FREQUENCY -6 0 -7 -8 -10 -9 -20 -10 INPUT RETURN LOSS -11 -30 -12 -40 -13 OUTPUT RETURN LOSS -14 -50 -15 -16 -60 1800 1850 1900 1950 2000 1800 1840 1880 1920 1960 2000 FREQUENCY (MHz) FREQUENCY (MHz) 4 _ RETURN LOSS (dB) RETURN LOSS (dB) GAIN (dB) MAX2640-04 REVERSE ISOLATION (dB) MAX2640-09 MAX2640-07 REVERSE ISOLATION (dB) NOISE FIGURE (dB) MAX2640-05 ICC (mA) MAX2640-10 MAX2640-08 MAX2640-06,Pin Description
PIN NAME FUNCTION Amplifier Input. AC-couple to this pin with a DC blocking capacitor. Use recommended input matching 1 RFIN network (see Typical Operating Circuit). 2, 3, 5 GND Ground. For optimum performance, provide a low inductance connection to the ground plane. Amplifier Output. Use the recommended series blocking or matching capacitor (see Typical Operating 4 RFOUT Circuit). Supply Voltage. Bypass to ground directly at the supply pin. The value of the bypass capacitor is deter- 6 VCC mined by the lowest operating frequency. Additional bypassing may be necessary for long VCC lines (see Typical Operating Circuit).Detailed Description Applications Information
The MAX2640 and MAX2641 are ultra-low-noise ampli- External Matching Components fiers that operate with RF input frequency ranges of The MAX2640/MAX2641 are easy to use, generally 400MHz to 1500MHz (MAX2640) or 1400MHz to requiring only five external components as shown in the 2500MHz (MAX2641). These devices are available in Typical Operating Circuit. To reduce external compo- SOT23-6 packages and contain internal bias circuitry to nent count further, replace external inductors with minimize the number of required external components. microstrip transmission lines. The high reverse isolation Their small size and low external component count allows the tuning of the input matching network without make them ideal for applications where board space is affecting the output match, and vice versa. Select input limited. and output matching networks to obtain the desired combination of gain, noise figure, and return loss per- formance. The Typical Operating Circuits show the rec- ommended input and output matching networks for the MAX2640/MAX2641 at 900MHz and 1900MHz, respectively. These values are optimized for best simultaneous gain, noise figure, and return loss perfor- mance. To aid in the design of matching networks for other frequencies, Tables 1 and 2 list typical device S- parameters and Tables 3 and 4 list typical device noise parameters. _ 5,Table 1. MAX2640 Typical Scattering Parameters at VCC = +3V, TA = +25°C
FREQUENCY S11 S21 S12 S22 PHASE PHASE PHASE PHASE (MHz) MAG MAG MAG MAG 400 0.907 -35.1 4.62 109.1 0.001 13.5 0.302 108.4 500 0.882 -43.1 4.70 90.4 0.001 64.7 0.33 93.6 600 0.858 -50.8 4.76 70.7 0.001 55.2 0.352 81.5 700 0.832 -58.1 4.80 50.6 0.002 39.4 0.365 69.4 800 0.810 -64.9 4.85 29.5 0.004 64.2 0.384 56.8 900 0.788 -71.0 4.77 9.2 0.005 36.3 0.396 44.7 1000 0.771 -76.6 4.74 -12.0 0.007 28.0 0.412 33.5 1100 0.749 -82.3 4.55 -32.4 0.010 12.3 0.436 21.9 1200 0.735 -88.0 4.48 -53.4 0.013 -10.6 0.455 10.7 1300 0.720 -93.4 4.24 -75.9 0.015 -28.2 0.469 -0.2 1400 0.702 -98.8 4.17 -94.9 0.021 -42.9 0.482 -9.9 1500 0.688 -104.9 3.81 -117.5 0.024 -59.8 0.489 -20.2Table 2. MAX2641 Typical Scattering Parameters at VCC = +3V, TA = +25°C
FREQUENCY S11 S21 S12 S22 PHASE PHASE PHASE PHASE (MHz) MAG MAG MAG MAG 1500 0.734 -75.5 4.397 -90.5 0.013 -80.3 0.535 17.7 1600 0.717 -80.3 4.209 -109.8 0.016 -91.9 0.514 8.6 1700 0.695 -85.3 4.193 -131.6 0.018 -116.5 0.513 -0.5 1800 0.678 -90.6 3.876 -150.0 0.021 -128.7 0.510 -10.6 1900 0.661 -96.6 3.801 -173.5 0.023 -150.6 0.493 -21.6 2000 0.646 -102.6 3.456 166.9 0.026 -166.6 0.470 -32.0 2100 0.632 -108.8 3.302 146.4 0.028 171.7 0.431 -43.4 2200 0.620 -114.0 2.981 123.6 0.029 150.7 0.403 -56.1 2300 0.610 -119.4 2.781 105.3 0.033 132.2 0.374 -69.4 2400 0.604 -124.6 2.430 82.9 0.032 111.2 0.338 -86.2 2500 0.603 -128.4 2.118 64.7 0.030 95.7 0.316 -98.3 6 _,Table 3. MAX2640 Typical Noise Parameters at VCC = +3V, TA = +25°C
FREQUENCY (MHz) fMIN (dB) Γ opt Γ opt ANGLE RN (Ω) 400 0.66 0.56 21 12.5 500 0.69 0.54 25 11.9 600 0.72 0.51 30 11.3 700 0.75 0.48 35 10.8 800 0.78 0.46 40 10.2 900 0.82 0.43 45 9.7 1000 0.85 0.40 50 9.3 1100 0.89 0.37 56 8.8 1200 0.93 0.35 62 8.3 1300 0.97 0.32 68 7.9 1400 1.01 0.29 77 7.4 1500 1.06 0.26 84 7.0Table 4. MAX2641 Typical Noise Parameters at VCC = +3V, TA = +25°C
FREQUENCY (MHz) fMIN (dB) Γ opt Γ opt ANGLE RN (Ω) 1500 1.02 0.43 44 12.4 1600 1.05 0.40 47 11.8 1700 1.08 0.38 50 11.3 1800 1.10 0.36 54 10.8 1900 1.14 0.32 58 10.3 2000 1.17 0.30 62 9.9 2100 1.20 0.28 66 9.4 2200 1.23 0.25 71 9.0 2300 1.27 0.22 77 8.6 2400 1.30 0.19 82 8.3 2500 1.34 0.17 91 8.0 Layout and Power-Supply Bypassing Proper grounding of the GND pins is essential. If the A properly designed PC board is essential to any PC board uses a topside RF ground, connect it directly RF/microwave circuit. Be sure to use controlled imped- to all GND pins. For a board where the ground plane is ance lines on all high-frequency inputs and outputs. not on the component side, the best technique is to The power supply should be bypassed with decoupling connect the GND pin to the board with a plated capacitors located close to the device VCC pins. For through-hole close to the package. long VCC lines, it may be necessary to add additional decoupling capacitors. These additional capacitors can be located further away from the device package. _ 7, Pin Configuration TOP VIEW RFIN16VCC MAX2640 GND 2 MAX2641 5 GND GND34RFOUT SOT23-6 Package Information8_6LSOT.EPS]15
Similar documents

Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. FEATURES Pi GND - Low voltage operation Vg1 Vd=3.2V - High output powe

Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-97-B-0920 Author : T.F. Buss Date : 20-11-97 Department : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG5

APPLICATION NOTE5WClass-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 INTRODUCTION This application note contains information ona5Wclass-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935

APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY 5 ADJUSTMENT OF THE AMPLIFIER 5.1 Tuning the outputnetwork 5.2 Testing the unit under RF conditions 5.3 Tuning the unit’s inputnet

APPLICATION NOTE A broadband3Wamplifier for band IV/V TV transposers based on the BLW898 AN98015 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 AMPLIFIER ELECTRICAL DESIGN OBJECTIVES 4 DESIGN OF THE AMPLIFIER 4.1 Mounting the transistor 4.2 Positioning of the matching capacitors (see Figs 3 and 4) 5 AMPLIFIER

APPLICATION NOTE A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F ECO8005 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 199

APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A low

APPLICATION NOTE A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 ECO7904 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 4 ADJUSTMENTS OF THE AMPLIFIER 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA 6 MEASURED RESULTS 7 CONCLUSION 8 REFERENCES 19

APPLICATION NOTE A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 ECO7901 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS 3.1 The equivalent circuit of the BLW34 3.1.1 The output network 3.1.2 The input network 4 THE HYBRID COUPLED AMPLIFIER 4.1 Practical

DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification 1997 Dec 04 Supersedes data of August 1995 File under Discrete Semiconductors, SC14 FEATURES MARKING • High power gain TYPE NUMBER CODE • Low noise figure BFG540W N9 page43• High tran

INTEGRATED CIRCUITS DATA SHEET I2C-bus allocation table General 1997 Mar 03 File under Integrated Circuits, IC12 I2C-BUS ALLOCATION TABLE (IN GROUP ORDER) The group number represents the hexadecimal equivalent of the four most significant bits of the slave address (A6-A3). Group 0 (0000) 000- Genera

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 FEATURES PINNING • High power gain PIN DESCRIPTION handbook, 2 c4olumns 3 • Low noise figure BFG540 (Fig.1) Code: N37 • High tran

Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,0

INTEGRATED CIRCUITS DATA SHEET IC12 LCD selection guide Objective specification 1997 Mar 04 File under Integrated Circuits, IC12 1997 Mar 04 2 LCD SEGMENT DRIVERS Drive capability, Number of segments at LCD Typ. On-chip a Multiplex rate (Duty) voltage system bias Special Gold Device voltage Interfac

Types added to the range since the last issue of the IC02 CD-ROM (1997 issue) are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet. PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; I2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; I

Philips Semiconductors I2C peripheral selection guide GENERAL PURPOSE ICs 68000-Based CMOS Microcontrollers 68070 68000 CPU/MMU/UART/DMA/timer LCD Drivers 93CXXX UST/I2C/34k ROM/512 RAM OM4085 Universal LCD driver for low multiplex rates PCF211XC family LCD drivers 80C51-Based CMOS Microcontrollers*

DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 FIRST GENERATION NPN WIDEBAND TRANSISTORS (fT up to 3.5 GHz) PACKAGE fT / IC CURVE LEADED SURFACE-MOUNT (see Fig.1) SOT54 SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 BF747 (

Selection guide INTEGRATED FRONT-END SYSTEMS/MIXERS/AMPLIFIERS INPUTVITYPE DESCRIPTION CC CC PINS Pkg FREQUENCY (V) (mA) (GHz) Image Reject Front-End Systems SA1920 dual-band 3.6 - 3.9 HB Rx: 41.1 48 BE 0.869 - 0.96 or 800/1900 MHz HB Tx: 21.3 at 3.75 V 1.93 - 1.99 LNA + IRM + IFamp. SA1921 dual-ban

INTEGRATED CIRCUITS DATA SHEET Assigned I2C-bus addresses General 1997 Mar 03 File under Integrated Circuits, IC12 ASSIGNED I2C-BUS ADDRESSES (IN ALPHANUMERIC ORDER OF TYPE NUMBER) I2TYPE C SLAVE ADDRESSES DESCRIPTION NUMBER A6 A5 A4 A3 A2 A1 A0 - General call address0000000- Reserved addresses0000X