Download: Technical Note UHF BAND GaAs POWER AMPLIFIER
Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. FEATURES Pi GND - Low voltage operation Vg1 Vd=3.2V - High output power Vd1 GND Po=33dBm (typ.) @1710~1785MHz R Po=33dBm (typ.) @1850~1910MHz Vd2 / Po - High efficiency Vg2 Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm Pin : RF input (Note1) - Surface mount package Pout : RF output (Note1) - 2 Stage Amplifier Vd1 : Drain bias 1 - External matching circuit is...
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Technical Note UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.DESCRIPTION PIN CONFIGURATION (TOP VIEW)
MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier.FEATURES Pi GND
- Low voltage operation Vg1 Vd=3.2V - High output power Vd1 GND Po=33dBm (typ.) @1710~1785MHz R Po=33dBm (typ.) @1850~1910MHz Vd2 / Po - High efficiency Vg2 Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm Pin : RF input (Note1) - Surface mount package Pout : RF output (Note1) - 2 Stage Amplifier Vd1 : Drain bias 1 - External matching circuit is required Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2APPLICATION GND : Connect to GND
CASE : Connect to GND- 1.8GHz band handheld phone : Connect to GND through - 1.9GHz band handheld phone R the resistorQUALITY GRADE Note1: Connect to matching circuits.
- GG *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC Mar.'97 (1/12), ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit Vd1,Vd2 Drain voltage6VVg1,Vg2 Gate voltage -4 V Pi Input power 15 dBm Tc(op) Operating case temperature -30~+85 ˚C Tstg Storage temparature -30~+100 ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Limits Symbol Parameter Test conditions Unit Note1,2 MIN TYP MAX 1710 — 1785 f frequency MHz 1850 — 1910 Pin Input power Vd1=Vd2=3.2V,Po=33dBm — — 10 dBm Idt Total drain current — 1250 — mA Ig Gate current Vd1=Vd2=3.2V, — — 3 mA Pin<10dBm, Po=33dBm 2sp 2nd harmonics — — -30 dBc ρin input VSWR — — 3 — Damage Vd1=Vd2=3.2V, — with-standing Pin<10dBm, No damage Load VSWR=10, All phase Note3 Time=10 sec Vd1=Vd2=3.2V, — Stability Pin<10dBm, No oscillation Note3 Load VSWR=3:1, All phase Spurious level<-60dBc Note1 : Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note2 : GMSK Pulse operation Note3 : Sampling inspection MITSUBISHI ELECTRIC Mar.'97 (2/12), VG1 VG2 Pin Pout FET1 Matching FET2 circuits VD1 VD2Equivalent circuit of MGF7168C with our test board
: MGF7168C(Ceramic package) : our test board(εr=4.8, t=0.6mm) MITSUBISHI ELECTRIC Mar.'97 (3/12),Input/Output Impedance ZI=4.5-j27.8 (Ω) : 1.88GHz ZL(ηmax) = 3.3-j4.7 (Ω) : f=1.88GHz ZL(Po max)= 2.4-j5.8 (Ω) : f=1.88GHz
ηmax 1150mA(Po>32.8dBm) Pomax (33.8dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC Mar.'97 (4/12),Equivalent Circuit of Test Board for PCS(DCS1900)
l=14.0 l=6.7 l=2.0 w=1.0 w=1.0 w=1.0 1.5pF Pin MGF 7168C 2.5pF Vd2 1000pF l=28.6 w=0.5 l=2.7 w=2.2 Pout 8pF l=11.7 3pF w=3.5 Unit:mm SUB. data ER=4.8 H=600µm Metal T=43µm MITSUBISHI ELECTRIC Mar.'97 (5/12),Pin vs. Pout, Idt, ηt for PCS1900
35 1500 70 30 1300 60 25 1100 50 20 900 40 15 700 30 10 500 20 5 Pout 300 10Pout Idt Efficiency 0 100 0 -50510 15 -50510 15 Pin (dBm) Pin (dBm) Fin=1880MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation MITSUBISHI ELECTRIC Mar.'97 (6/12) Pout (dBm) Idt (mA) Efficiency (%),Input/Output Impedance (DCS1800) ZI= 6.0-j22.4 (Ω) : 1.75GHz ZL(ηmax) = 3.3-j2.6 (Ω) : 1.75GHz ZL(Po max)= 2.2-j3.5 (Ω) : 1.75GHz
ηmax 1250mA(Po>33dBm) Pomax (33.7dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm Mar.'97 (7/12) 0.1 0.2,Equivalent Circuit of Test Board for PCN(DCS1800)
Equivalent Circuit of Test Board for PCN (DCS1800)
Preliminary MGF7168C
information UHF BAND GaAs POWER AMPLIFIERPin vs. Pout, Idt, ηt for PCN/DCS1800
35 1500 70 30 1300 60 25 1100 50 20 900 40 15 700 30 10 500 20 5 300 10 Pout Pout Idt Efficiency 0 100 0 -50510 15 -50510 15 Pin (dBm) Pin (dBm) Fin=1750MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation Nov. '96 (10/12) Pout (dBm) Idt (mA) Efficiency (%),Recommended Mount Pad
2.50 4.10 0.8 4.90 0.8 Unit:mm Mar.'97 (11/12) 7.40 1.27 x 4=5.08 0.9 1.2 1.4 0.45 2.16 1.0 2.14,Preliminary MGF7168C
informationOUTLINE DRAWING Unit : mm
6.1+/-0.2 Note1 0.35.2374- R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection 1 INPUT 2 Vg 3 Vd1 4 MC 5 Vg 6 OUTPUT/Vd2 7 GND 8 GND 4.1 Case:GND 2 - (0.1) 8 - (4.9) Note1 : 1 pin mark Note2 : The values without tolerance are typical. Mar.'97 (12/12) 1.1+/-0.2 7.0+/-0.2 P1.27x4= 5.08+/-0.1 6 - 0.8+/-0.1 4.28 2 - (0.1) 2 - 2.06 (1.2) 6.2]15
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