Download: APPLICATION NOTE5WClass-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019

APPLICATION NOTE5WClass-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019,

INTRODUCTION

This application note contains information ona5Wclass-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935 − 960 MHz. The next chapters contain information on the transistor, the amplifier construction and the typical RF performance obtained. TRANSISTOR BACKGROUND The BLV904 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN) substrate to enhance its thermal performance. The bottom surface is fully metallized to enable reflow soldering of the transistor to the printed-circuit board. All leads are isolatad from the bottom surface and a ceramic lid is used to cover the transistor. The BLV904 features internal input matching for easy wide band matching over the 935 − 960 MHz frequency band. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 13 dB and a minimum collector efficiency of 50%. Two tone IMD performance is typically below −30 dBc. AMPLIFIER DESCRIPTION Figure 1 shows the schematic diagram of the amplifier. The matching circuits applied are fixed tuned two-stage lowpass networks using striplines and multilayer chip capacitors. Conventional bias decoupling networks are applied with improved decoupling for two-tone operation. The list of components and stripline dimensions is given inTable 2. Figure 2 contains the printed-circuit board layout and components topology of the amplifier. The printed-circuit board contains a footprint of solder pads for collector and base lead interconnect and a thermal pad with vias to provide a low thermal resistance path to the package. Pads with vias for RF grounding of the emitter leads are integrated with the thermal pad. All SMD components were reflow soldered to the printed-circuit board. The printed-circuit board was soldered to a heatsink in the same process step. More details on the mounting considerations for the SOT409B can be found in application note AN98017. The pc-board material used is Rogers RT/Duroid 6010 with a dielectric constant of 10.2 and a thickness of 0.64 mm. AMPLIFIER PERFORMANCE The amplifiers performance was measured at VCE = 26 V and Icq = 15 mA. The heatsink temperature was held at 25 °C during the measurement. A summary of the performance is given in the Table 1. Table 1 UNIT SINGLE-TONE TWO-TONE Frequency band MHz 935 − 960 935 − 960 Load powerW55(PEP) Power gain dB 15.5 15.5 Power gain flatness dB 1.9 − Collector efficiency % 53 40 Intermodulation distortion dBc − −30 up to5WPEP Single-tone performance curves are presented in: Figure 3; Load power (Pl) versus drive power (Pd); Figure 4; Power gain (Gp) and collector efficiency (Eff) versus load power (Pl). Two-tone performance curves are presented in: Figure 5; Load power (Pl-PEP) versus drive power (Pd-PEP) Figure 6; Power gain (Gp) and collector efficiency (Eff) versus load power (Pl-PEP) Figure 7; Intermodulation distortion (d3) as function of load power (Pl-PEP) 1998 Mar 23 2,

CONCLUSION

An AIN based surface mountable transistor BLV904 has been used to develop an amplifier for driver application in GSM base stations. Biased at 26 V and 15 mA this amplifier has showna5WCW power output capability with a gain of 15 dB and a collector efficiency 53%. For two-tone operation the IMD performance is better than −31 dBc up to5WPEP. In addition the IMD over a wide dynamic range can be further optimized by adding a base series resistor of a few Ω combined with a good selection of Icq as described in application note AN98026. handbook, full pagewidth +Vbias R1 R2 C5 C13 +VC L5 C6 C7 C8 C9 C19 C18 C17 C16 C15 C14 L15 L4 L14 C10 C11 L9 C2 C1 L1 L6 L7 C12 input TR1 L10 L1 outputL3 L8 1 L12 L13 C3 C4 MGH817L2 Fig.1 Schematic diagram. 1998 Mar 23 3, handbook, full pagewidth 65 C9 + + C19 +V C8 C C18C17 C7 + C16C6 Vbias C15 C14 R1 L5 L15 R2 C5 L14 L4 L9 C13 C2 L6 L7 L10 L11 L12 L1 L3 C1 L8 C12C10 C11 L13 C3 L2 C4 MGH816 Fig.2 Printed-Circuit board and layout amplifier. 1998 Mar 23 4, Table 2 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C12 multilayer ceramic chip capacitor; 24 pF C2 multilayer ceramic chip capacitor; 3.3 pF C3 multilayer ceramic chip capacitor; 2.2 pF C4 multilayter ceramic chip capacitor; 1.6 pF C5, C6, C13, C18 multilayer ceramic chip capacitor; 200 pF note 2 C7, C17 multilayer ceramic chip capacitor; 100 pF note 2 C8, C14, C15, C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C9, C19 tantal SMD capacitor 35 V, 10 µF C10 multilayer ceramic chip capacitor; 1.8 pF note 1 C11 multilayer ceramic chip capacitor; 13 pF note 1 L1 stripline; note 3 50 Ω 8.2 × 0.65 mm L2 stripline; note 3 4.9Ω6× 14 mm L3, L6 stripline; note 3 24.5 Ω 1.5 × 2 mm L4 RF-choke 0.22 µH L5, L15 grade 4S2 ferroxcube chip-bead 4330 030 36301 L7 stripline; note 3 46.3 Ω 12.22 × 0.7 mm L8 stripline: L8 not connected over 4.3 Ω 7.58 × 16.1 mm total length, only 7.58 mm. connected; note 3 L9 stripline; note 3 4.3 Ω 10 × 16.1 mm L10 stripline; note 3 34.3 Ω 1.9 × 1.2 mm L11 stripline; note 3 34.3 Ω 3.2 × 1.2 mm L12 stripline; note 3 34.3 Ω 4.8 × 1.2 mm L13 stripline; note 3 6.7Ω8× 9.9 mm L14 5 turns enamelled 1 mm copper wire R1 metal film resistor 100 Ω; 0.4 W T1 RF transistor BLV904 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on double copper-clad printed-circuit board RT/Duroid 6010 (εr = 10.2); thickness 0.64 mm. 1998 Mar 23 5, MGH818 handbook, halfpage

PL

(W) (1) (2) 0 0.1 0.2 P (W) 0.3d (1) f = 960 MHz. (2) f = 935 MHz. Pd(W); Class AB: Vce = 26 V; Icq = 15 mA; 5 W loadline, f = 960 MHz. Fig.3 PL = f (Pd). MGH819 18 60 handGbopok, halfpage (1) gain (dB) 15 (2) (%) (1) 12 60 (2) 6 200002468PL (W) (1) f = 960 MHz. (2) f = 935 MHz. PL(W); Class AB: Vce = 26 V; Icq = 15 mA; 5 W loadline, f = 960 MHz. Fig.4 Gp and Eff. = f(PL). 1998 Mar 23 6, MGH820 handbook, halfpage PL (PEP) (W) (1) (2) 0 0.05 0.1 0.15 0.2 Pd (PEP) (W) (1) f = 960 MHz. (2) f = 935 MHz. Pd-PEP(W); Class AB: Vce = 26 V; Icq = 15 mA; 5 W PEP loadline; delta-f = 0.1 MHz, f1 = 960 MHz, f2 = 960.1 MHz. Fig.5 PL-PEP = f (Pd). MGH821 hand 60Gbook, halfpagep gain (dB) (1) 15 (2) (%) (1) 12 40 (2) 6 20000246PL (PEP) (W) (1) f = 960 MHz. (2) f = 935 MHz. PL-PEP(W); Class AB: Vce = 26 V; Icq = 15 mA; 5 W PEP loadline; delta-f = 0.1 MHz, f2 = 960.1 MHz. Fig.6 Gp and Eff. = f (PL-PEP). 1998 Mar 23 7, MGH822 −20 handbook, halfpage

IMD

(dB) −30 IMD3 −40 (1) (2) −500246PL (PEP) (W) (1) f = 960 MHz. (2) f = 935 MHz. PL-PEP(W); Class AB: Vce = 26 V; Icq = 15 mA; 5 W PEP loadline; delta-f = 0.1 MHz, f1 = 960 MHz, f2 = 960.1 MHz. Fig.7 IMD = f (PL-PEP). 1998 Mar 23 8,

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