Download: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W

APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W,

ABSTRACT

• Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A low noise amplifier for 900 MHz. • Main results At a frequency of 900 MHz, the amplifier has an insertion power gain of approximately 15.5 dB, a noise figure of approximately 2 dB, and a third order intercept point of approximately 10 dBm (measured at input). PHILIPS ELECTRONICS N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1999 Dec 14 2,

INTRODUCTION

With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. A feature of the BFG480W is that it has a good linearity performance. Therefore the BFG480W is well suited for LNAs with high linearity demands, such as Code Division Multiple Access (CDMA) systems. This application note gives an example of a 900 MHz LNA with the BFG480W. CIRCUIT DESCRIPTION The following initial conditions apply for the amplifier design: • Vsupply ≈ 3.6 V • VCE ≈ 2 V • IC ≈ 20 mA • f = 900 MHz. The circuit is designed to show the following performance: • s 221 ≈ 15 dB • VSWRIN < 2 • VSWROUT < 2 • NF ≤ 2 dB • IP3i > 9 dBm. The input and output matching is realised with an LC-combination. Also extra emitter inductance (micro stripline) is used on both emitter-leads to improve the matching and the noise figure. CIRCUIT DIAGRAM handbook, full pagewidth R1 R3 +Vsupply C3 C4 C5 C6 C7 L2 L1 W1 R2 C2 output 50 Ω C1 input 50 Ω TR1 µS1,µ L1S2: L2 µS1 µS2 D1 L3 MGS731 W2 Fig.1 Circuit diagram. 1999 Dec 14 3, COMPONENT LIST Table 1 Component list for the 900 MHz LNA COMPONENT VALUE UNIT SIZE, MANUFACTURER PURPOSE, COMMENT TR1 BFG480W SOT343R Philips RF transistor R1 8.2 kΩ 0603 Philips collector to base bias R2 10 Ω 0603 Philips improvement RF stability (K-factor > 1) R3 56 Ω 0603 Philips collector bias; levelling hFE spread C1 27 pF 0603 Philips input match (base coupling) C2 27 pF 0603 Philips output match (collector coupling) C3 27 pF 0603 Philips 900 MHz short (L1 and L2 to ground) C4 100 nF 0805 Philips improvement IP3 by decoupling LF IP3 products C5 27 pF 0603 Philips 900 MHz short (L1 and L2 to ground) C6 100 nF 0805 Philips improvement IP3 by decoupling LF IP3 products C7 1 nF 0603 Philips RF decoupling collector bias L1 15 nH 0805CS Coilcraft input match L2 8.2 nH 0805CS Coilcraft output match µS1 see Table 2 emitter induction: micro stripline and via-hole µS2 see Table 2 emitter induction: micro stripline and via-hole PCB FR4 εr = 4.6; d = 0.5 mm Table 2 Dimensions of the micro striplines µS1 and µS2 (see Fig.1) DIMENSION VALUE UNIT DESCRIPTION L1 2.0 mm length micro stripline; Zo ≈ 48 Ω L2 1.0 mm length interconnect micro stripline and via-hole area L3 1.0 mm length via-hole area W1 0.5 mm width micro stripline W2 1.0 mm width via-hole area D1 0.4 mm diameter of via-hole 1999 Dec 14 4, BOARD LAYOUT The layout has been designed with the Hewlett Packard Microwave Design System (HP-MDS). handbook, full pagewidth µS1 input C1 output C2 TR1 C4 L1 R2 C3 Vsupply L2 R1 C7 C5 R3 µS2 C6 MGS732 Fig.2 PCB layout.

MEASUREMENTS

The measurements have been done under the following conditions (unless otherwise stated): • Supply voltage 3.6 V • Supply current 19 mA • Frequency 900 MHz. Table 3 Measuring results of the 900 MHz amplifier SYMBOL PARAMETER CONDITIONS VALUE UNIT s 221 insertion power gain 15.5 dB VSWRIN input voltage standing wave ratio 1.9 VSWROUT output voltage standing wave ratio 1.2 NF noise figure 2.0 dB IP3i third order intercept point ∆f = 200 kHz; Pi = −20 dBm 10 dBm 1999 Dec 14 5,

NOTES

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NOTES

1999 Dec 14 7,

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