Download: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification 1997 Dec 04 Supersedes data of August 1995

DISCRETE SEMICONDUCTORS

DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor

Product specification 1997 Dec 04 Supersedes data of August 1995 File under Discrete Semiconductors, SC14, FEATURES MARKING • High power gain TYPE NUMBER CODE • Low noise figure BFG540W N9 page43• High transition frequency BFG540W/X N7 • Gold metallization ensures BFG540W/XR N8 excellent reliability. PINNING12APPLICATIONS Top view MSB014 PIN DESCRIPTION They are intended for applications in the RF front end, in wideband BFG540W (see Fig.1) applications in the GHz range such as 1 collector analog and digital cellular telephones, Fig.1 SOT343N. cordless telephones (CT2, CT3, 2 base PCN, DECT, etc.), radar detectors, 3 emitter pagers, satellite television tuners 4 emitter (SATV), MATV/CATV amplifiers and BFG540W/X (see Fig.1) repeater amplifiers in fibre-optic 1 collector page 3 4systems. 2 emitter DESCRIPTION 3 base NPN silicon planar epitaxial 4 emitter21transistors in plastic, 4-pin BFG540W/XR (see Fig.2) Top view MSB842 dual-emitter SOT343N and SOT343R 1 collector packages. 2 emitter 3 base Fig.2 SOT343R. 4 emitter QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC collector current (DC) − − 120 mA Ptot total power dissipation up to Ts = 85 °C − − 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 16 − dB power gain IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C 10 − dB |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 14 15 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz − 2.1 − dB 1997 Dec 04 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 120 mA Ptot total power dissipation up to Ts = 85 °C; see Fig.3; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point up to Ts = 85 °C; note 1 180 K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MBG248 handbook, halfpage Ptot (mW) 0 50 100 150 200Ts( o C) VCE ≤ 10 V. Fig.3 Power derating curve. 1997 Dec 04 3,

CHARACTERISTICS

Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown open emitter; IC = 10 µA ; IE = 0 20 − − V voltage V(BR)CES collector-emitter breakdown RBE = 0; IC = 40 µA 15 − − V voltage V(BR)EBO emitter-base breakdown open collector; IE = 100 µA; IC = 0 2.5 − − V voltage ICBO collector cut-off current open emitter; VCB = 8 V; IE = 0 − − 50 nA hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; − 9 − GHz Tamb = 25 °C Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power IC = 40 mA; VCE = 8 V; f = 900 MHz; − 16 − dB gain; note 1 Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; − 10 − dB Tamb = 25 °C |s 221| insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 15 − dB Tamb = 25 °C F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; − 1.3 1.8 dB f = 900 MHz Γs = Γopt; IC = 40 mA; VCE = 8 V; − 1.9 2.4 dB f = 900 MHz Γs = Γopt; IC = 10 mA; VCE = 8 V; − 2.1 − dB f = 2 GHz PL1 output power at 1 dB gain IC = 40 mA; VCE = 8 V; f = 900 MHz; − 21 − dBm compression RL = 50 Ω; Tamb = 25 °C ITO third order intercept point note 2 − 34 − dBm Vo output voltage note 3 − 500 − mV d2 second order intermodulation note 4 − −50 − dB distortion Notess21. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log- 2-1- dB. (1 – s 2) (1 – s 2) 2. IC = 40 mA; V 11 22 CE = 8 V; RL = 50 Ω; Tamb = 25 °C; a) fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA; a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C; a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. 1997 Dec 04 4, MRA749 MRA750 250 1 handbook, halfpage handbook, halfpage

C

h reFE (pF) 200 0.8 150 0.6 100 0.4 50 0.20010−2 10−1 1 10 10204812 IC (mA) VCB (V) VCE = 8 V. IC = 0; f = 1 MHz. Fig.4 DC current gain as a function of Fig.5 Feedback capacitance as a function of collector current; typical values. collector-base voltage; typical values. MLC044 handbook, halfpagefT(GHz) VC E = 8 V VC E = 4 V 101110 2I C (mA) f = 1 GHz; Tamb = 25 °C. Fig.6 Transition frequency as a function of collector current; typical values. 1997 Dec 04 5, MLC045 MLC046 30 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 20 20 MSG Gmax

GUM

Gmax 10 10 GUM00010 20 30 40 50 0 10 20 30 40 50IC(mA) I C (mA) f = 900 MHz; VCE = 8 V. f = 2 GHz; VCE = 8 V. Fig.7 Gain as a function of collector current; Fig.8 Gain as a function of collector current; typical values. typical values. MLC047 MLC048 50 50 handbook, halfpage handbook, halfpage gain gain (dB) G (dB)UM G UM 40 40

MSG MSG

30 30 20 20 10 10 G Gmax max0010 102 103 104 10 102 103 104 f (MHz) f (MHz) IC = 10 mA; VCE = 8 V. IC = 40 mA; VCE = 8 V. Fig.9 Gain as a function of frequency; Fig.10 Gain as a function of frequency; typical values. typical values. 1997 Dec 04 6, MEA973 −20 MEA972 handbook, halfpage −20 d handbook, halfpageim d2 (dB) (dB) −30 −30 −40 −40 −50 −50 −60 −60 −70 −70 10 20 30 40 50 60 10 20 30 40 50 60 IC (mA) IC (mA) Vo = 500 mV; f(p + q − r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C; Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω. RL = 75 Ω. Fig.11 Intermodulation distortion as a function Fig.12 Second order intermodulation distortion as a of collector current; typical values. function of collector current; typical values. MRA760 MLC0494520 handbook, halfpage handbook, halfpage

F

F min Gass (dB) f = 900 MHz (dB)(dB) 4 15 3 1000 MHz Gass f = 2000 MHz 3 2000 MHz 10 2000 MHz251000 MHz F 900 MHz min1000 MHz 1 500 MHz 900 MHz 1 500 MHz000−5 1 10 102 I (mA) 1 10 102C IC (mA) VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure as a function of Fig.14 Associated available gain as a function of collector current; typical values. collector current; typical values. 1997 Dec 04 7, MLC050 MRA7614520 handbook, halfpage handbook, halfpage F IC = 10 mA 40 mAF min Gass (dB) (dB) (dB)I C = 40 mA Gass 4 15 10 mA 3 102540 mA 1 Fmin 10 mA1000−5 10 2 10 3 104234f(MHz) 10 10 10f (MHz) VCE = 8 V. VCE = 8 V. Fig.15 Minimum noise figure as a function Fig.16 Associated available gain as a function of frequency; typical values. of frequency; typical values. 1997 Dec 04 8, handbook, full pagewidth stability 90o circle 1.0 135o 45o 0.8 0.5 2 0.6 unstable 0.40.2 5 regionFmin = 1.3 dB Γopt 0.2 0.2 0.5125180o 0 0o0F= 1.5 dB 0.2 F = 2 dB5F= 3 dB 0.5 2 135o 45o MLC051 1.0of= 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.17 Common emitter noise figure circles; typical values. o handbook, full pagewidth 90 1.0 135o 45o 0.8 0.5 2 0.6 0.4 0.2 5 0.2 0.2 0.5125180o 0 0o 0 ΓoptFmin = 2.1 dBGmax= 9.8 dB G = 9 dB G = 8 dB 0.2 F = 1.5 dB5F= 3 dB F = 4 dB 0.5 2 135o 45o MLC052 1.0 90o f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω. Fig.18 Common emitter noise figure circles; typical values. 1997 Dec 04 9, o handbook, full pagewidth 90 1.0 135o 45o 0.8 0.5 2 0.6 3 GHz 0.4 0.2 5 0.2 0.2 0.5125180o 0 0o 0 0.2 5 40 MHz 0.5 2 135o 45o MLC053 1.0 90o VCE = 8 V; IC = 40 mA; Zo = 50 Ω. Fig.19 Common emitter input reflection coefficient (s11); typical values. o handbook, full pagewidth 90 135o 45 o 40 MHzo3GHz1800o50 40 30 20 10 135o 45 o 90o MLC054 VCE = 8 V; IC = 40 mA. Fig.20 Common emitter forward transmission coefficient (s21); typical values. 1997 Dec 04 10, handbook, full pagewidth 90o 3 GHz 135o 45oo40 MHz1800o0.25 0.20 0.15 0.10 0.05 135o 45 o 90o MLC055 VCE = 8 V; IC = 40 mA. Fig.21 Common emitter reverse transmission coefficient (s12); typical values. handbook, full pagewidth 90o 1.0 135o 45o 0.8 0.5 2 0.6 0.4 0.2 5 0.2 0.2 0.5125180o 0 0o03GHz 40 MHz 0.2 5 0.5 2 135o 45o MLC056 1.0 90o VCE = 8 V; IC = 40 mA; Zo = 50 Ω. Fig.22 Common emitter output reflection coefficient (s22); typical values. 1997 Dec 04 11, SPICE parameters for the BFG540W crystal SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.045 fA 36 (1) VJS 750.0 mV 2 BF 184.3 − 37 (1) MJS 0.000 − 3 NF 0.981 − 38 FC 0.814 − 4 VAF 41.69 V Note 5 IKF 10.00 A 1. These parameters have not been extracted, the 6 ISE 232.4 fA default values are shown. 7 NE 2.028 − 8 BR 43.99 − 9 NR 0.992 − handbook, halfpage Ccb 10 VAR 2.097 V 11 IKR 166.2 mA L1LBL2 12 ISC 129.8 aA B B' C' C 13 NC 1.064 − E' Cbe Cce 14 RB 5.000 Ω

L

15 IRB 1.000 µA E MBC964 16 RBM 5.000 Ω 17 RE 353.5 mΩ L3 18 RC 1.340 Ω

E

19 (1) XTB 0.000 − 20 (1) EG 1.110 eV QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) 21 (1) XTI 3.000 − fc = scaling frequency = 1 GHz. 22 CJE 1.978 pF Fig.23 Package equivalent circuit 23 VJE 600.0 mV SOT343N; SOT343R. 24 MJE 0.332 − 25 TF 7.457 ps − List of components (see Fig.23).26 XTF 11.40 27 VTF 3.158 V DESIGNATION VALUE UNIT 28 ITF 156.9 mA Cbe 70 fF 29 PTF 0.000 deg Ccb 50 fF 30 CJC 793.7 fF Cce 115 fF 31 VJC 185.5 mV L1 0.34 nH 32 MJC 0.084 − L2 0.10 nH 33 XCJC 0.150 − L3 0.25 nH 34 TR 1.598 ns LB 0.40 nH 35 (1) CJS 0.000 F LE 0.40 nH 1997 Dec 04 12, PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT343NDBEAXyHEvMAe43

Q A

A1c12b1 bpwMBLp e1 detailX012mm scale DIMENSIONS (mm are the original dimensions)

A

UNITA1bbcDEeeHLQvwymaxp11Epmm 1.1 0.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23 0.8 0.3 1.3 1.15 0.2 0.2 0.1 0.5 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN PROJECTION ISSUE DATEVERSION IEC JEDEC EIAJ SOT343N 97-05-21 1997 Dec 04 13, Plastic surface mounted package; reverse pinning; 4 leads SOT343RDBEAXyHEvMAe34

Q A

A1c21wMBbp b1 Lp e1 detailX012mm scale DIMENSIONS (mm are the original dimensions)

A

UNITA1bbcDEeeHLQvwymaxp11Epmm 1.1 0.1 0.4 0.7 0.25 2.2 1.35 1.15 2.2 0.45 0.231.3 0.2 0.2 0.1 0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT343R 97-05-21 1997 Dec 04 14,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Dec 04 15,

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Printed in The Netherlands 127127/00/03/pp16 Date of release: 1997 Dec 04 Document order number: 9397 750 03146]

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