Download: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 FEATURES PINNING • High power gain PIN DESCRIPTION handbook, 2 c4olumns 3 • Low noise figure BFG540 (Fig.1) Code: N37 • High transition frequency 1 collector • Gold metallization ensures 2 base12excellent reliability. 3 emitter Top view MSB014 4 emitter DESCRIPTION BFG540/X (Fig.1) Code: N43 Fig.1 SOT143B. NPN silicon planar epitaxial 1 collector transistors, intended for wideband 2 emitter applications in the GHz range, such...
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DISCRETE SEMICONDUCTORS
DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
Product specification September 1995 File under Discrete Semiconductors, SC14, FEATURES PINNING • High power gain PIN DESCRIPTION handbook, 2 c4olumns 3 • Low noise figure BFG540 (Fig.1) Code: N37 • High transition frequency 1 collector • Gold metallization ensures 2 base12excellent reliability. 3 emitter Top view MSB014 4 emitter DESCRIPTION BFG540/X (Fig.1) Code: N43 Fig.1 SOT143B. NPN silicon planar epitaxial 1 collector transistors, intended for wideband 2 emitter applications in the GHz range, such as analog and digital cellular 3 base handbook, 2 co3lumns 4 telephones, cordless telephones 4 emitter (CT1, CT2, DECT, etc.), radar BFG540/XR (Fig.2) Code: N49 detectors, satellite TV tuners (SATV), 1 collector MATV/CATV amplifiers and repeater21amplifiers in fibre-optical systems. 2 emitter 3 base Top view MSB035 The transistors are mounted in plastic SOT143B and SOT143R packages. 4 emitter Fig.2 SOT143R. September 1995 2, QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC DC collector current − − 120 mA Ptot total power dissipation up to Ts = 60 °C; note 1 − − 400 mW hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 60 120 250 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; − 9 − GHz Tamb = 25 °C GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; − 18 − dB Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; − 11 − dB Tamb = 25 °C 2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 15 16 − dBS21 Tamb = 25 °C F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; − 1.3 1.8 dB f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; − 1.9 2.4 dB f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; − 2.1 − dB f = 2 GHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation up to Ts = 60 °C (note 1) − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point up to Ts = 60 °C note 1 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. September 1995 3,CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 8 V − − 50 nA hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; − 9 − GHz Tamb = 25 °C GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; − 18 − dB (note 1) Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; − 11 − dB Tamb = 25 °C 2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 15 16 − dBS21 Tamb = 25 °C F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; − 1.3 1.8 dB f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; − 1.9 2.4 dB f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; − 2.1 − dB f = 2 GHz; Tamb = 25 °C PL1 output power at 1 dB gain IC = 40 mA; VCE = 8 V; RL = 50 Ω; − 21 − dBm compression f = 900 MHz; Tamb = 25 °C ITO third order intercept point note 2 − 34 − dBm VO output voltage note 3 − 500 − mV d2 second order intermodulation note 4 − −50 − dB distortion NotesS21. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log- 2-1- dB. (1 – S 2) (1 – S 2) 2. VCE = 8 V; IC = 40 mA; R = 50 Ω; T = 25 °C; 11 22 L amb fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C; Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. September 1995 4, MBG249 MRA749 handbook, halfpage 250handbook, halfpage P htot FE (mW) 20000050 100 150 200 10−2 10−1 1 10 102 o IC (mA)Ts ( C) VCE ≤ 10 V. VCE = 8 V; Tj = 25 °C. Fig.4 DC current gain as a function of Fig.3 Power derating curve. collector current. MRA750 MRA751 1 12 handbook, halfpage handbook, halfpage Cre (pF) fT 0.8 (GHz) VCE = 8 V 0.6 VCE = 4 V 0.4 0.20004812 10−1 1 10 102 VCB (V) IC (mA) IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.5 Feedback capacitance as a function of Fig.6 Transition frequency as a function of collector-base voltage. collector current. September 1995 5, MRA752 MRA753 handbook, halfpage 25handbook, halfpage gain gain (dB) MSG (dB) 20 20 GmaxGUM
15 15 Gmax 10 10 GUM5500020 40 60 0 20 40 60 IC (mA) IC (mA) VCE = 8 V; f = 900 MHz. VCE = 8 V; f = 2 GHz. MSG = maximum stable gain; Gmax = maximum available gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. GUM = maximum unilateral power gain.Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current.
MRA754 MRA755 50 50 handbook, halfpage handbook, halfpage gain gain (dB) GUM (dB) GUM 40 40MSG MSG
30 30 20 20 G Gmax max 10 100023410 102 410 10 10 10 103 10 f (MHz) f (MHz) IC = 10 mA; VCE = 8 V. IC = 40 mA; VCE = 8 V. GUM = maximum unilateral power gain; GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MSG = maximum stable gain; Gmax = maximum available gain.Fig.9 Gain as a function of frequency. Fig.10 Gain as a function of frequency. September 1995 6
, MEA973 MEA972 −20 −20 handbook, halfpage handbook, halfpage dim d2 (dB) (dB) −30 −30 −40 −40 −50 −50 −60 −60 −70 −70 10 20 30 40 50 60 10 20 30 40 50 60 IC (mA) IC (mA) Fig.11 Intermodulation distortion as a function of Fig.12 Second order intermodulation distortion collector current. as a function of collector current. MRA760 MRA761 5 20 5 20 handbook, halfpage handbook, halfpage F Gass F IC = 10 mA 40 mAmin min Gass (dB) f = 900 MHz (dB) (dB) G (dB)ass 4 15 4 15 1000 MHz Gass 3 2000 MHz 10 3 10 2000 MHz2525Fmin 1000 MHz 40 mA 900 MHz Fmin 1 500 MHz 10 mA0100−5 0 −5 1 10 102 102 103 104 IC (mA) f (MHz) VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure and associated available gain as functions of Fig.14 Minimum noise figure and associated collector current. available gain as functions of frequency. September 1995 7, handbook, full pagewidth 90° 1.0 135° 45° 0.8 0.5 2 0.6 0.4 0.2 Fmin = 1.3 dB 5 0.2OPT
0.2 0.5125180° 0 0° 0 F = 1.5 dB F = 2 dB 0.25F= 3 dB 0.5 2 −135° −45° MRA762 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz.Fig.15 Noise circle figure.
handbook, full pagewidth 90° 1.0 135° 45° 0.8 0.52G= 8 dB 0.6 G = 9 dB Gmax = 11.4 dB G = 10 dB 0.45MS
0.2 0.2 0.5125180° 0 0° 0OPT
Fmin = 2.1 dB 0.2 F = 2.5 dB5F= 3 dB F = 4 dB 0.5 2 −135° −45° MRA763 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz.Fig.16 Noise circle figure. September 1995 8
, handbook, full pagewidth 90° 1.0 135° 45° 0.8 0.523GHz 0.6 0.4 0.2 5 0.2 0.2 0.5125180° 0 0° 0 0.2 5 40 MHz 0.5 2 −135° −45° MRA756 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90° 135° 45° 40 MHz 180° 3 GHz 0° 50 40 30 20 10 −135° −45° −90° MRA757 IC = 40 mA; VCE = 8 V. Fig.18 Common emitter forward transmission coefficient (S21). September 1995 9, handbook, full pagewidth 90° 135° 45° 3 GHz 180° 40 MHz 0° 0.25 0.20 0.15 0.10 0.05 −135° −45° −90° MRA758 IC = 40 mA; VCE = 8 V. Fig.19 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90° 1.0 135° 45° 0.8 0.5 2 0.6 0.4 0.2 5 0.2 0.2 0.5125180° 0 0° 0 3 GHz 40 MHz 0.2 5 0.5 2 −135° −45° MRA759 1.0 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (S22). September 1995 10, PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143BDBEAXyvMAHE e bpwMB43Q A
A1c12Lp b1 e1 detailX012mm scale DIMENSIONS (mm are the original dimensions)A
UNITA1bbmaxp1cDEee1 HE LpQvwy1.1 0.1 0.48 0.88 0.15 3.0 1.4 2.5 0.45 0.55mm 0.9 0.38 0.78 0.09 2.8 1.2 1.9 1.7 2.1 0.15 0.45 0.2 0.1 0.1 OUTLINE REFERENCES EUROPEAN PROJECTION ISSUE DATEVERSION IEC JEDEC EIAJ SOT143B 97-02-28 September 1995 11, Plastic surface mounted package; reverse pinning; 4 leads SOT143RDBEAXyvMAHE e bpwMB34Q A
A1c21Lp b1 e1 detailX012mm scale DIMENSIONS (mm are the original dimensions)A
UNITA1bp b1cDEee1 HE LpQvwymax 1.1 0.1 0.48 0.88 0.15 3.0 1.4 2.5 0.55 0.45mm 0.9 0.38 0.78 0.09 2.8 1.2 1.9 1.7 2.1 0.25 0.25 0.2 0.1 0.1 OUTLINE REFERENCES EUROPEAN PROJECTION ISSUE DATEVERSION IEC JEDEC EIAJ SOT143R 97-03-10 September 1995 12,DEFINITIONS
Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 13,NOTES
September 1995 14,NOTES
September 1995 15,Philips Semiconductors – a worldwide company
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Order this document by MC3371/D LOW POWER The MC3371 and MC3372 perform single conversion FM reception and consist of an oscillator, mixer, limiting IF amplifier, quadrature discriminator, FM IF active filter, squelch switch, and meter drive circuitry. These devices are designed for use in FM dual c
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INTEGRATED CIRCUITS DATA SHEET TDA8822 Universal I2C-bus programmable RF modulator Preliminary specification 1997 Jan 08 File under Integrated Circuits, IC02 FEATURES • 5 V power supply • Video amplifier with clamp and white clip circuits • Programmable video modulation depth • FM sound modulator (4