Download: Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line
Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 15 Vdc Emitter–Base Voltage VEBO 2.0 Vdc Collector Current — Continuous IC 35 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation, Tca...
Author:
Ella Shared: 7/30/19
Downloads: 1401 Views: 3613
Content
Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line
Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 15 Vdc Emitter–Base Voltage VEBO 2.0 Vdc Collector Current — Continuous IC 35 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation, Tcase = 75°C (2) PD(max) 0.306 W Derate linearly above Tcase = 75°C @ 4.08 mW/°C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Storage Temperature Tstg –55 to +150 °C Thermal Resistance Junction to Case RθJC 245 °C/W CASE 318–08, STYLE 6 DEVICE MARKING SOT–23 BFR93ALT1 = R2 LOW PROFILE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) V(BR)CEO 12 — Vdc (IC = 10 mA) Collector–Base Breakdown Voltage V(BR)CBO 15 — Vdc (IC = 10 µA) Emitter–Base Breakdown Voltage V(BR)EBO 2.0 — Vdc (IC = 100 µA) Collector Cutoff Current (VCE = 10 V) ICEO — 50 nA Collector Cutoff Current (VCB = 10 V) ICBO — 50 nA ON CHARACTERISTICS DC Current Gain (1) hFE 40 — — (IC = 30 mA, VCE = 5.0 V) Collector–Emitter Saturation Voltage (1) VCE(sat) — 0.5 Vdc (IC = 35 mA, IB = 7.0 mA) Base–Emitter Saturation Voltage (1) VBE(sat) — 1.2 Vdc (IC = 35 mA, IB = 7.0 mA) NOTES: 1. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 2. Case temperature measured on collector lead immediately adjacent to body of package. REV7MMOotoTrOolaR, OIncL. A19 R95F DEVICE DATA BFR93ALT1,ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT 3.0 — GHz
(IC = 30 mA, VCE = 5.0 V, f = 500 MHz)Noise Figure NF — 3.0 dB
(VCE = 5.0 V, IC = 2.0 mA, RS = 50 Ω, f = 30 MHz)PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD L FINISH THICKNESS. MINIMUM LEAD THICKNESSIS THE MINIMUM THICKNESS OF BASE
MATERIAL. 3 INCHES MILLIMETERSB S DIM MIN MAX MIN MAX
12A0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11VGD0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177C K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02HJS0.0830 0.1039 2.10 2.64DKV0.0177 0.0236 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTORCASE 318–08 ISSUE AF
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/spsBFR93ALT1 ◊ MOTOROLA RF DEBVFICRE93 DAALTA1/D
]15
Similar documents

INTEGRATED CIRCUITS DATA SHEET IC12 LCD selection guide Objective specification 1997 Mar 04 File under Integrated Circuits, IC12 1997 Mar 04 2 LCD SEGMENT DRIVERS Drive capability, Number of segments at LCD Typ. On-chip a Multiplex rate (Duty) voltage system bias Special Gold Device voltage Interfac

Types added to the range since the last issue of the IC02 CD-ROM (1997 issue) are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet. PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; I2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; I

Philips Semiconductors I2C peripheral selection guide GENERAL PURPOSE ICs 68000-Based CMOS Microcontrollers 68070 68000 CPU/MMU/UART/DMA/timer LCD Drivers 93CXXX UST/I2C/34k ROM/512 RAM OM4085 Universal LCD driver for low multiplex rates PCF211XC family LCD drivers 80C51-Based CMOS Microcontrollers*

DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 FIRST GENERATION NPN WIDEBAND TRANSISTORS (fT up to 3.5 GHz) PACKAGE fT / IC CURVE LEADED SURFACE-MOUNT (see Fig.1) SOT54 SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 BF747 (

Selection guide INTEGRATED FRONT-END SYSTEMS/MIXERS/AMPLIFIERS INPUTVITYPE DESCRIPTION CC CC PINS Pkg FREQUENCY (V) (mA) (GHz) Image Reject Front-End Systems SA1920 dual-band 3.6 - 3.9 HB Rx: 41.1 48 BE 0.869 - 0.96 or 800/1900 MHz HB Tx: 21.3 at 3.75 V 1.93 - 1.99 LNA + IRM + IFamp. SA1921 dual-ban

INTEGRATED CIRCUITS DATA SHEET Assigned I2C-bus addresses General 1997 Mar 03 File under Integrated Circuits, IC12 ASSIGNED I2C-BUS ADDRESSES (IN ALPHANUMERIC ORDER OF TYPE NUMBER) I2TYPE C SLAVE ADDRESSES DESCRIPTION NUMBER A6 A5 A4 A3 A2 A1 A0 - General call address0000000- Reserved addresses0000X

APPLICATION NOTE Wideband class-A power amplifier for TV transposers in band I (50 − 80 MHz) with two transistors BLV33 NCO8207 CONTENTS 1 SUMMARY 2 EXPECTED PERFORMANCE 3 PARTS LIST 1998 Mar 2321SUMMARY The transistor BLV33 is primarily intended for use in linear VHF amplifiers for television trans

INTEGRATED CIRCUITS DATA SHEET TDA6800 TDA6800T Video modulator circuit Product specification March 1986 File under Integrated Circuits, IC02 GENERAL DESCRIPTION The TDA6800 is a modulator circuit for modulation of video signals on a VHF/UHF carrier. The circuit requiresa5Vpower supply and few exter

APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 2321SUMMARY This report gives information on the BLF246 as a linear amplifier at 28 MHz for S.S.B. signals. Typically the dev

INTEGRATED CIRCUITS DATA SHEET TDA8725T Antenna signal processor Product specification 1995 Mar 21 File under Integrated Circuits, IC02 Philips Semiconductors FEATURES For PIP applications, the antenna input signal is split and fed to the main TV tuner and the PIP tuner. Good signal • 75 Ω antenna i

Drain-supply-switching of Mobile Phone Power Amps with Pulsed Operation Mode Switching the supply voltage to the drain of a GaAs device is required in many circuits in order to maximise standby times and enable reliable battery charging. Three different concepts for the pulsed switching of the drain

Order this document by MC3359/D .includes oscillator, mixer, limiting amplifier, AFC, quadrature discriminator, op/amp, squelch, scan control, and mute switch. The MC3359 HIGH GAIN is designed to detect narrowband FM signals using a 455 kHz ceramic filter for use in FM dual conversion communications

SIEGET®25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the following characteristics: Gain: 13.6 dB Noise Figur

PRODUCT INFORMATION APPLICATIONS: RF Components ® • Group 900 MHz ISM band phones • RY3-Series 1.8 GHz DECT phones• Point of sale terminals Transceivers for Analog Cordless STANDARD PACKAGE Telephones FEATURES • PLL programmable • Fully duplexed mode • Compatible with European CT1, CT1+ and DECT spe

Order this document by MC3362/D .includes dual FM conversion with oscillators, mixers, quadrature discriminator, and meter drive/carrier detect circuitry. The MC3362 also has LOW–POWER buffered first and second local oscillator outputs and a comparator circuit for FSK detection. DUAL CONVERSION • Co

Order this document SEMICONDUCTOR TECHNICAL DATA by AN1235/D Prepared by: Onis Cogburn INTRODUCTION (NCI) was created to provided an organization to produce captions and promote the service. In 1980 the closed cap- Designed primarily for the hearing impaired, closed cap- tioning for the hearing impa

Order this document by MC3371/D LOW POWER The MC3371 and MC3372 perform single conversion FM reception and consist of an oscillator, mixer, limiting IF amplifier, quadrature discriminator, FM IF active filter, squelch switch, and meter drive circuitry. These devices are designed for use in FM dual c

CXA3050M NICAM and SMATV RF MODULATOR/PLL Description Fully synthesized I2C controlled UHF/VHF TV RF 24 pin SOP (Plastic) Modulator compatible with PAL and NTSC video formats. Features • Minimal adjustment of external components • For use on VHF and UHF TV Frequencies • Video RF carrier frequency pr

INTEGRATED CIRCUITS DATA SHEET TDA8822 Universal I2C-bus programmable RF modulator Preliminary specification 1997 Jan 08 File under Integrated Circuits, IC02 FEATURES • 5 V power supply • Video amplifier with clamp and white clip circuits • Programmable video modulation depth • FM sound modulator (4