Download: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 FIRST GENERATION NPN WIDEBAND TRANSISTORS (fT up to 3.5 GHz) PACKAGE fT / IC CURVE LEADED SURFACE-MOUNT (see Fig.1) SOT54 SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 BF747 (2) BF547 BF547W BF689K (3) BFS17 BFS17W BF763 (4) BFS17A BFG17A (5) BFR53 (6) BFQ17 BFG16A SECOND GENERATION WIDEBAND TRANSISTORS (fT up to 6 GHz) PACKAGE fT / IC CURVE CERAMIC SURFACE-MOUNTPOLARITY (see Fig.1) SOT122 SOT23 SOT89 SOT143 SOT223 SOT323 (note 1) NPN BFR92(A) BFG92A BFR92AW (7) (/X)(/XR...
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DISCRETE SEMICONDUCTORS
DATA SHEET Selection guide RF Wideband Transistors
1997 Nov 24 File under Discrete Semiconductors, SC14, FIRST GENERATION NPN WIDEBAND TRANSISTORS (fT up to 3.5 GHz)PACKAGE
fT / IC CURVE LEADED SURFACE-MOUNT (see Fig.1) SOT54 SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 BF747 (2) BF547 BF547W BF689K (3) BFS17 BFS17W BF763 (4) BFS17A BFG17A (5) BFR53 (6) BFQ17 BFG16A SECOND GENERATION WIDEBAND TRANSISTORS (fT up to 6 GHz)PACKAGE
fT / IC CURVE CERAMIC SURFACE-MOUNTPOLARITY (see Fig.1) SOT122 SOT23 SOT89 SOT143 SOT223 SOT323 (note 1) NPN BFR92(A) BFG92A BFR92AW (7) (/X)(/XR) PNP BFT92 BFT92W NPN BFR93(A) BFG93A BFG94 BFR93AW (8) (/X)(/XR) (9) PNP BFT93 BFT93W NPN BFR106 BFQ19 BFG97 (10) PNP BFQ149 BFG31 (11) NPN BFQ34 BFQ18A BFG35 (12) NPN BFQ68 (13) NPN BFQ136 Note 1. SOT143 package is available with alternative pinning. European pinning - no type number suffix; USA pinning - suffix /X; Japanese pinning - suffix /XR. Brackets around the suffixes (/X) and (/XR) denote pinning options. No brackets means no options, (e.g. BFG10W/X: only available with USA pinning). 1997 Nov 24 2, THIRD GENERATION NPN WIDEBAND TRANSISTORS (fT up to 8 GHz)PACKAGE
fT / IC CURVE CERAMIC SURFACE-MOUNT (see Fig.1) SOT172 SOT23 SOT143 SOT223 SOT323 (note 1) BFQ67 BFG67 BFQ67W (14) (/X)(/XR) BFG197 BFG198 (15) (/X)(/XR) (16) BFQ135 BFG135 (17) BFQ270 Note 1. SOT143 package is available with alternative pinning. European pinning - no type number suffix; USA pinning - suffix /X; Japanese pinning - suffix /XR. Brackets around the suffixes (/X) and (/XR) denote pinning options. No brackets means no options, (e.g. BFG10W/X: only available with USA pinning). FOURTH GENERATION NPN WIDEBAND TRANSISTORS (fT up to 10 GHz)PACKAGE
fT / IC CURVE CERAMIC SURFACE-MOUNT (see Fig.1) SOT172 SOT23 SOT143 SOT223 SOT323 SOT343 SOT353 SOT363 (note 1) (note 1) BFT25A BFG25A/X BFS25A BFG25AW (18) (/X)(/XR) BFR505 BFG505 BFS505 BFG505W BFC505 BFM505 (19) (/X)(/XR) (/X)(/XR) BFE505 BFR520 BFG520 BFS520 BFG520W BFC520 BFM520 (20) (/X)(/XR) (/X)(/XR) BFE520 BFR540 BFG540 BFG541 BFS540 BFG540W (21) (/X)(/XR) (/X)(/XR) BFG590 BFG591 BFG590W (22) (/X)(/XR) (/X)(/XR) (23) BFQ621 BFG10(/X) BFG10W/X (24) BFG11(/X) BFG11W/X Note 1. SOT143 and SOT343 packages are available with alternative pinning. European pinning - no type number suffix; USA pinning - suffix /X; Japanese pinning - suffix /XR. Brackets around the suffixes (/X) and (/XR) denote pinning options. No brackets means no options, (e.g. BFG10W/X: only available with USA pinning). 1997 Nov 24 3, FIFTH GENERATION NPN WIDEBAND TRANSISTORS (fT up to 25 GHz)PACKAGE
fT / IC CURVE SURFACE-MOUNT (see Fig.1) SOT343 (25) BFG403W (26) BFG410W (27) BFG425W (28) BFG21W MSB643 f 40T (GHz) (27) (26) (28) 5thgeneration 15 (25) 124thgeneration (20) (21) (22) (23)10 (19) (24) 7 (14) (15) (17)(16) 63rdgeneration (18) (11) (12) (13) (7) (9) (8) (10) 2ndgeneration (4) (1) (5) (3) 1.51stgeneration 1.2 (6) (2) 0.9 0.8 0.1 0.2 0.512510 20 50 100 200 500 1000IC(mA) Fig.1 Transition frequency as a function of collector current for the five generations of RF bipolar wideband transistors. 1997 Nov 24 4, f / I RATINGS TYPETCCURVE POLARITY PACKAGE NUMBER VCEO IC Ptot (see Fig.1) (V) (mA) (mW) BF547 (2) NPN SOT23 20 50 300 BF547W (2) NPN SOT323 20 50 300 BF689K (3) NPN SOT54 15 25 360 BF747 (2) NPN SOT23 20 50 300 BF763 (3) NPN SOT54 25 25 360 BFC505 (19) NPN SOT353 8 18 500 BFC520 (20) NPN SOT353 8 70 1000 BFE505 (19) NPN SOT353 8 18 500 BFE520 (20) NPN SOT353 8 70 1000 BFG10(/X) (23) NPN SOT143 8 250 250 BFG10W/X (23) NPN SOT343 10 250 400 BFG11(/X) (24) NPN SOT143 8 500 400 BFG11W/X (24) NPN SOT343 8 500 760 BFG16A (6) NPN SOT223 25 150 1000 BFG17A (4) NPN SOT143 15 50 300 BFG25A/X (18) NPN SOT143 5 6.5 32 BFG25AW(/X)(/XR) (18) NPN SOT343 5 6.5 500 BFG31 (10) PNP SOT223 15 100 1000 BFG35 (11) NPN SOT223 18 150 1000 BFG67(/X)(/XR) (14) NPN SOT143 10 50 380 BFG92A(/X)(/XR) (7) NPN SOT143 15 25 400 BFG93A(/X)(/XR) (8) NPN SOT143 12 35 300 BFG94 (8) NPN SOT223 12 60 700 BFG97 (10) NPN SOT223 15 100 1000 BFG135 (16) NPN SOT223 15 150 1000 BFG197(/X)(/XR) (15) NPN SOT143 10 100 350 BFG198 (15) NPN SOT223 10 100 1000 BFG403W (25) NPN SOT343 4.5 3.6 16 BFG410W (26) NPN SOT343 4.5 12 54 BFG425W (27) NPN SOT343 4.5 30 135 BFG505(/X)(/XR) (19) NPN SOT143 15(1) 18 150 BFG505W(/X)(/XR) (19) NPN SOT343 15(1) 18 500 BFG520(/X)(/XR) (20) NPN SOT143 15(1) 70 300 Note 1. VCES. 1997 Nov 24 5, CHARACTERISTICS, typical valuesTYPE
fFG(1)NUMBER T UM @ f F GUM @ f Vo PL ITO @ IC & VCE (GHz) (dB) (dB) (MHz) (dB) (dB) (MHz) (mV) (dBm) (dBm) (mA) (V) BF547 1.2 20 100 BF547W 1.2 20 100 BF689K 1.8 4 100 3 16(3) 200 BF747 1.2 20 100 BF763 1.8 5 800 BFC505 7.3 1.8 900 3.5 2000 BFC520 7 1.3 900 BFE505 9 1.2 900 1.9 2000 BFE520 9 1.1 900 1.9 2000 BFG10(/X) 7(3) 1900 BFG10W/X 10(2)(3) 900 7(3) 1900 BFG11(/X) 5(3) 1900 BFG11W/X 6(2)(3) 1900 BFG16A 1.5 10 500 BFG17A 2.8 2.5 15 800 BFG25A/X 5 1.8 18 1000 BFG25AW(/X)(/XR) 5 2 16 1000 BFG31 5 16 500 12 800 550 70 10 BFG35 4 15 500 11 800 750 100 10 BFG67(/X)(/XR) 8 1.7 17 1000 2.5 10 2000 BFG92A(/X)(/XR) 5 2 16 1000 3 11 2000 BFG93A(/X)(/XR) 6 1.7 16 1000 2.3 10 2000 BFG94 6 2.7 500 3 13.5 1000 500 21.5 34 45 10 BFG97 5.5 2 16 500 12 800 700 70 10 BFG135 7 16 500 12 800 850 100 10 BFG197(/X)(/XR) 7.5 2.3 16 1000 10 2000 BFG198 8 18 500 15 800 700 70 8 BFG403W 17 1 900 1.6 2000611BFG410W 22 0.9 900 1.2 2000 15 10 2 BFG425W 25 0.8 900 1.2 2000 22 25 2 BFG505(/X)(/XR) 9 1.6 20 900 1.9 13 2000 4 1056BFG505W(/X)(/XR) 9 1.6 19 900 1.9 12 2000 4 1056BFG520(/X)(/XR) 9 1.6 19 900 1.9 13 2000 275 17 26 20 6 Notes 1. At dim = −60 dB, measured according to DIN45004B, par. 6.3: 3-tone test. 2. Minimum value. 3. Power gain Gp. 1997 Nov 24 6, fT / I RATINGSTYPE C CURVE POLARITY PACKAGE NUMBER VCEO IC Ptot (see Fig.1) (V) (mA) (mW) BFG520W(/X)(/XR) (20) NPN SOT343 15(1) 70 500 BFG540(/X)(/XR) (21) NPN SOT143 15(1) 120 500 BFG540W(/X)(/XR) (21) NPN SOT343 15(1) 120 500 BFG541 (21) NPN SOT223 15(1) 120 650 BFG590(/X)(/XR) (22) NPN SOT143 15 200 400 BFG590W(/X)(/XR) (22) NPN SOT343 15 200 500 BFG591 (22) NPN SOT223 15 200 2000 BFM505 (19) NPN SOT363 8 18 500 BFM520 (20) NPN SOT363 8 70 1000 Note 1. VCES. 1997 Nov 24 7, CHARACTERISTICS, typical valuesTYPE
fFG@ fFG@ f V (1)NUMBER T UM UM o PL ITO @ IC & VCE (GHz) (dB) (dB) (MHz) (dB) (dB) (MHz) (mV) (dBm) (dBm) (mA) (V) BFG520W(/X)(/XR) 9 1.6 17 900 1.85 11 2000 275 17 26 20 6 BFG540(/X)(/XR) 9 1.9 18 900 2.1 11 2000 500 21 34 40 8 BFG540W(/X)(/XR) 9 1.9 16 900 2.1 10 2000 500 21 34 40 8 BFG541 9 1.9 15 900 2.1 9 2000 500 21 34 40 8 BFG590(/X)(/XR) 5 13 900 7.5 2000 BFG590W(/X)(/XR) 5 13 900 7.5 2000 21 80 5 BFG591 7 13 900 7.5 2000 BFM505 9 1.4 17 900 1.9 10 2000 BFM520 9 1.7 15 900 1.9 9 2000 Note 1. At dim = −60 dB, measured according to DIN45004B, par. 6.3: 3-tone test. 1997 Nov 24 8, f / I RATINGS TYPETCCURVE POLARITY PACKAGE NUMBER VCEO IC Ptot (see Fig.1) (V) (mA) (mW) BFQ17 (6) NPN SOT89 25 150 1000 BFQ18A (11) NPN SOT89 18 150 1000 BFQ19 (10) NPN SOT89 15 100 1000 BFQ34 (11) NPN SOT122 18 150 2700 BFQ67 (14) NPN SOT23 10 50 300 BFQ67W (14) NPN SOT323 10 50 300 BFQ68 (12) NPN SOT122 18 300 4500 BFQ135 (16) NPN SOT172 19 150 2700 BFQ136 (13) NPN SOT122 18 600 9000 BFQ149 (10) PNP SOT89 15 100 1000 BFQ270 (17) NPN SOT172 19 500 10000 BFQ540 (21) NPN SOT89 12 120 1200 BFQ621 (23) NPN SOT172 16 150 800 BFR53 (5) NPN SOT23 10 50 250 BFR92 (7) NPN SOT23 15 25 300 BFR92A (7) NPN SOT23 15 25 300 BFR92AW (7) NPN SOT323 15 25 300 BFR93 (8) NPN SOT23 12 35 300 BFR93A (8) NPN SOT23 12 35 300 BFR93AW (8) NPN SOT323 12 35 300 BFR94A (8) NPN SOT122 25 150 3500 BFR106 (10) NPN SOT23 15 100 500 BFR505 (19) NPN SOT23 15(1) 18 150 BFR520 (20) NPN SOT23 15(1) 70 300 BFR540 (21) NPN SOT23 15(1) 120 480 BFS17 (3) NPN SOT23 15 25 300 BFS17A (4) NPN SOT23 15 25 300 BFS17W (3) NPN SOT323 15 50 300 BFS25A (18) NPN SOT323 5 6.5 32 BFS505 (19) NPN SOT323 15(1) 18 150 BFS520 (20) NPN SOT323 15(1) 70 300 BFS540 (21) NPN SOT323 15(1) 120 500 BFT25 (1) NPN SOT23 5 6.5 30 BFT25A (18) NPN SOT23 5 6.5 32 BFT92 (7) PNP SOT23 15 25 300 BFT92W (7) PNP SOT323 15 35 300 BFT93 (9) PNP SOT23 12 35 300 Note 1. VCES. 1997 Nov 24 9, CHARACTERISTICS, typical valuesTYPE
(1) NUMBER fT F GUM @ f F GUM @ f Vo PL ITO @ IC & VCE (GHz) (dB) (dB) (MHz) (dB) (dB) (MHz) (mV) (dBm) (dBm) (mA) (V) BFQ17 1.5 16 200 6.5 800 BFQ18A 4 BFQ19 5.5 3.3 11.5 500 7.5 800 BFQ344816.3 500 1200 26 45 120 15 BFQ67 8 1.7 14 1000 2.7 8 2000 BFQ67W8213 1000 2.7 8 2000 BFQ68 4 13 800 1600 28 47 240 15 BFQ135 6.5 17 500 13.5 800 1200 120 18 BFQ136 4 12.5 800 2500 500 15 BFQ149 5 3.75 12 500 BFQ270 6 16 500 10 1000 1600 240 18 BFQ540 9 1.9 900 500 40 8 BFQ621 7 18.5 500 1200 120 18 BFR53 2 5(2) 500 10.5 800 BFR92 5 2.4 18 500 150 14 10 BFR92A 5 2.1 14 1000382000 150 14 10 BFR92AW5214 1000382000 BFR93 5 1.9 16.5 500 BFR93A 6 1.9 13 1000372000 425 30 8 BFR93AW 5 1.5 13 1000 2.1 8 2000 BFR94A 3.5 8 200 5 13.5 500 BFR106 5 3.5 11.5 800 350 50 9 BFR505 9 1.6 17 900 1.9 10 2000 4 1056BFR520 9 1.6 15 900 1.9 9 2000 17 26 20 6 BFR540 9 1.9 14 900 2.1 7 2000 550 21 34 40 8 BFS17 1 4.5 500 BFS17A 2.8 2.5 13.5 800 150 14 10 BFS17W 1.6 4.5 500 BFS25A 5 1.8 13 1000 BFS505 9 1.6 17 900 1.9 10 2000 4 1056BFS520 9 1.6 15 900 1.9 9 2000 17 26 20 6 BFS540 9 1.9 14 900 2.1 8 2000 21 34 40 8 BFT25 2.3 3.8 18 500 12 800 BFT25A 5 1.8 15 1000 BFT92 5 2.5 18 500 150 14 10 BFT92W 5 2.5 17 500 3 11 1000 BFT93 5 2.4 16.5 500 300 30 5 Notes 1. At dim = −60 dB, measured according to DIN45004B, par. 6.3: 3-tone test. 2. Maximum value. 1997 Nov 24 10, fT / I RATINGSC TYPE NUMBER CURVE POLARITY PACKAGE VCEO IC Ptot (see Fig.1) (V) (mA) (mW) BFT93W (9) PNP SOT323 12 50 300 MPSH10 NPN SOT54 25 40 1000 PMBT3640 PNP SOT23 12 80 350 PMBTH10 NPN SOT23 25 40 400 PMBTH81 PNP SOT23 20 40 400 DEVELOPMENT TYPES f RATINGST / IC TYPE NUMBER CURVE POLARITY PACKAGE VCEO IC Ptot (see Fig.1) (V) (mA) (mW) BFG21W (28) NPN SOT343 4.5 200(1) 600 Note 1. Typical value. 1997 Nov 24 11, CHARACTERISTICS, typical valuesTYPE
(1) NUMBER fT F GUM @ f F GUM @ f Vo PL ITO @ IC & VCE (GHz) (dB) (dB) (MHz) (dB) (dB) (MHz) (mV) (dBm) (dBm) (mA) (V) BFT93W 5 2.4 15.5 500 3 10 1000 MPSH10 0.65(2) PMBT3640 0.5(2) PMBTH10 0.65(2) PMBTH81 0.6(2) Notes 1. At dim = −60 dB, measured according to DIN45004B, par. 6.3: 3-tone test. 2. Minimum value. DEVELOPMENT TYPES CHARACTERISTICS, typical valuesTYPE
(1) NUMBER fT F GUM @ f F GUM @ f Vo PL ITO @ IC & VCE (GHz) (dB) (dB) (MHz) (dB) (dB) (MHz) (mV) (dBm) (dBm) (mA) (V) BFG21W 18(2) 10(2)(3) 1900 Notes 1. At dim = −60 dB, measured according to DIN45004B, par. 6.3: 3-tone test. 2. Minimum value. 3. Power gain Gp. 1997 Nov 24 12, LINE-UPS Analog cellular (AMPS, (E)TACS, NMT) 900 MHz INPUT POWER st nd rd PL SUPPLY VOLTAGE1 STAGE 2 STAGE 3 STAGE (mW) (W) (V) Bipolar 1 BFG540/X BLT80 BLT81 1.261BFG540/X BLT70 BLT71 1.2 4.8 1 BFG10W/X BLT71/8 − 1.2 4.8 Digital cellular (GSM) 900 MHz INPUT POWER 1st STAGE 2nd P SUPPLY VOLTAGE STAGE 3rd STAGE L (mW) (W) (V) Bipolar 1 BFG540W/X BFG10W/X BLT82 3.5 pulsed 6 Portable transmitters (860 MHz to 960 MHz) INPUT POWER st P SUPPLY VOLTAGE1 STAGE 2nd STAGE 3rd STAGE L (mW) (W) (V) Bipolar 1 BFG540 BLT80 BLT81 1.2 6 15 BFG93A BLT80 BLT92/SL 3 7.5 1997 Nov 24 13, RF wideband transmitters for pager front-end (see Fig.2) FUNCTION TYPE NUMBER REMARKS RF amplifier BFC505 higher gain, lower noise, high isolation (0.3 mA) BFG403W high performance, low voltage, low current BFR505 higher gain, lower noise (1 mA) BFT25A lowest current (0.2 mA) Oscillator, mixer or buffer BFQ67 choice of the transistor is determined by the available current BFR92A and the required performance BFR505 BFT25A antenna handbook, halfpage RF amp mixer IF out prescaler buffer oscillator tuning MGC028 Fig.2 Typical front-end section for pagers. 1997 Nov 24 14, RF wideband transistors for the receiver section in cordless/cellular phones (see Fig.3) SYSTEM FREQUENCY FUNCTION TYPE NUMBER FEATURES (MHz) LNA BFC505 1900 high isolation gain, low noise current BFG410W 900; 1900; 2500 very low noise BFG425W 900; 1900; 2500 very low noise BFR505 900; 1900 good performance at low current (1 mA) BFR520 900; 1900 higher gain, lower noise (10 mA) Mixer BFE505 900; 1900 balanced mixer in a single SOT353 package BFG505 900; 1900 good performance, low current BFG410W 900; 1900; 2500 low noise, high isolation BFG520 900; 1900 higher power to IF (10 mA) BFR93A 900 low cost, acceptable performance Buffer and VCO BFG410W 900; 1900; 2500 excellent isolation BFG505 1900 buffer and VCO in a single SOT353 package BFQ67 900 third generation, good performance BFR92A 900 excellent VCO, good buffer, low-cost BFR93A 900 excellent VCO, good buffer, low-cost BFR505 900; 1900 good VCO, high-gain buffer, low current BFR520 900; 1900 good VCO, higher output power IF BFS17A 40 to 100 any first or second generation transistor mixer handbook, full pagewidth RX RF amp IF detector buffer amp oscillator antenna prescaler tuning DUP VCO prescaler buffer amp oscillatorTX
buffer power amp amp tuningVCO
MGC027 Fig.3 Typical RF section for cordless and cellular phones. 1997 Nov 24 15, RF wideband transistors for the receiver section in cordless/cellular phones (see Fig.3)SYSTEM
FUNCTION FREQUENCY SOT23 SOT323 SOT143 (1) SOT343 (1) SOT353 SOT363 (MHz) LNA 900; 1900 BFR505 BFS505 BFG505 BFG505W BFC505 BFM505 900; 1900 BFR 520 BFS520 BFG520 BFG520W BFC520 BFM520 Mixer 900 BFR93A BFR93AW BFG93A 900; 1900 BFR505 BFS505 BFG505 BFG505W BFE505 BFM505 900; 1900 BFR520 BFS520 BFG520 BFG520W BFE520 BFM520 Buffer and 900 BFR92A BFR92AW BFG92A VCO 900 BFR93A BFR93AW BFG93A 900 BFQ67 BFQ67W BFG67 900; 1900 BFR505 BFS505 BFG505 BFG505W BFC505 BFM505 900; 1900 BFR520 BFS520 BFG520 BFG520W BFC520 BFM520 IF 40 to 100 BF547 BF547W BFS17 BFS17W BFG17A BFR92A BFR92AW BFG92A Note 1. Also available in /X and /XR versions. 1997 Nov 24 16, RF wideband transistors for the power amplifier section in cordless/cellular phones (see Fig.4) SUPPLY VOLTAGE P SYSTEM out SOT143 SOT343 (V) (mW) CT1, CT1+, 3.3 driver for PA2 BFG67 CT2, CT2+, BFG505 BFG505W CT3 BFG520 BFG520W 15 BFG67 20 BFG520 BFG520W 40 BFG540 BFG540W DECT, PHP 3.3 400 BFG540/X BFG540W/X BFG10/X BFG10W/X BFG11/X BFG11W/X PA2 PA1 handbook, full pagewidth 900 MHz CT1, CT1 , CT2, CT2 , CT3 PB3 PB2 PB1 1.9 GHz DECT, PHP, DCSI800 PC3 PC2 PC1 from to antenna VCO/ 900 MHz GSM modulator PD3 PD2 PD1 900 MHz AMPS, (E)TACS, NMT (discrete) PA ModPE
900 MHz AMPS, (E)TACS, NMT MGC026 Fig.4 Typical power amplifier section for cordless and cellular phones. 1997 Nov 24 17]15
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