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Selection guide

INTEGRATED FRONT-END SYSTEMS/MIXERS/AMPLIFIERS

INPUT

V I TYPE DESCRIPTION CC CC PINS Pkg FREQUENCY (V) (mA) (GHz) Image Reject Front-End Systems SA1920 dual-band 3.6 - 3.9 HB Rx: 41.1 48 BE 0.869 - 0.96 or 800/1900 MHz HB Tx: 21.3 at 3.75 V 1.93 - 1.99 LNA + IRM + IFamp. SA1921 dual-band 3.6 - 3.9 HB Rx: 38.6 48 BE 0.869 - 0.960 or 800/1550 MHz HB Tx: 18.8 at 3.75 V 1.515 - 1.600 LNA + IRM +IFamp. SA3600 low & high-band LNAs + 2.7 - 4.0 LB:15 at3V24 DH LB LNA: 0.8 - 1.0 mixers HB: 20 at3VHB LNA: 1.9 - 2.0 LB mixer: 0.8 - 1.0 HB mixer: 1.9 - 2.0 UAA2067G LNA + IRM + 3 - 3.5 Rx: 24 at 3.6 V 32 BE 1.8 - 1.9 mod. + VCO Tx: 42 at 3.6 V UAA2068G TX + synthe + integrated 3 - 5.2 Rx: 35 at 3.6 V 32 BE output: 1.88 - 1.92 RFVCO for DECT Tx: 55 at 3.6 V UAA2077AM LNA + IRM 3.15 - 5.3 27 at4V20 DK 1.8 - 1.9 UAA2077BM LNA + IRM + Tx 3.6 - 5.3 Rx: 27 at4V20 DK 1.8 - 2 down-convert mixer Tx: 14 at4VUAA2077CM LNA + IRM + Tx 3.6 - 5.4 Rx: 36 at 3.75 V 20 DK 1.8 - 2 down-convert mixer Tx: 14 at 3.75 V Image-Reject Front-End Systems UAA2073M LNA + IRM + Tx 3.6 - 5.3 Rx: 26 at 3.75 V Tx: 12 20 DK 0.925 - 0.960 down-convert mixer at 3.75 V UAA2073AM LNA + IRM + Tx 3.6 - 5.3 Rx: 26 at 3.75 V Tx: 12 20 DK 0.925 - 0.960 down-convert mixer at 3.75 V Integrated Front-End Systems SA611 LNA + mixer 2.7 - 5.5 8.3/5.2(1) at3V20 DK LNA 1.2 mixer 1.2 SA621 LNA + mixer + VCO 2.7 - 5.5 13.3/10(1) at3V20 DK LNA 1.2 mixer 1.2 SA631 LNA + mixer 2.7 - 5.5 8.3/5.2(1) at3V20 DK LNA 1.2 mixer 1.2 1999 May 20 19,

Selection guide

GAIN NOISE INPUT 1 dB IMAGE INPUT OUTPUT POWER FIGURE IP3 COMP. REJECTION IMPED. IMPED. FEATURES (dB) (dB) (dBm) (dBm) (dB) (Ω) (Ω) fRF = 2 GHz 22 LB: 2.6 LB: 9 24 - 25 35 50 50 dual-band 800 MHz & 1.9 GHz; HB: 4.1 HB: 12 triple-mode AMPS/DAMPS/PCS 22 LB: 2.6 LB:9 24 - 25 35 50 50 dual-band 900 MHz & 1.5 GHz HB: 3.9 HB:13 30 5.8 −25 −33 34 190 50 RF to IF DECT transceiver 0.8 pF diff. asym. (DSH) 20 4.3 −17 −22 32 601kdiff. 3.15 V, 4.3 dB DECT front-end 1 pF diff. (DSH) 20 4.3 DCS −17 −23 32 601kdiff. DCS1800 front-end 1 pF diff. 22 3.8 DCS −17 −24 38 601kdiff. PCS1900/DCS1800 front-end 4.0 PCS 0.8 pF diff. fRF = 900 MHz 23 3.25 −15 −23 37 1501kdiff. 3.6 V phase 2 GSM receiver 1 pF diff. 22 3.6 −15 −23 45 1501kdiff. GSM high IF 1 pF diff. fRF = 900 MHz 15/−28(1) 1.7 −7 −20 50 50 Low-voltage; excellent noise 8.7 9.5 +7 −14.5 50 high figure; LNA overload mode 15/−28(1) 1.7 −7 −20 50 50 Low-voltage; excellent noise 8.7 9.5 +4.5 −10 50 high figure; LNA overload mode; low phase-noise; interval VCO 15/−28(1) 1.7 −7 −20 50 50 Low voltage; excellent noise 9.6 9.5 +3.3 −14.5 50 high figure; LNA overload mode; excellent gain stability 17/−15(1) 1.7 −7 −17 50 50 Low voltage; excellent noise 16/−15(1) 2.2 −6 −15 figure; LNA overload mode; 10 10 +6 −4 50 high low current; excellent gain 9.5 8.5 +4 −6 stability 1999 May 20 20,

Selection guide INPUT

TYPEVIDESCRIPTION CC CC PINS Pkg(2) FREQUENCY NUMBER (V) (mA) (GHz) Mixer Systems SA9500 dual-band; CDMA/AMPS 2.7 - 3.3 PCS: 20; 20 DH HB: 1.99 down-converters CDMA: 20; FM: 7.7 LB: 0.894 SA9502 dual-band; CDMA/AMPS 2.7 - 4.0 PCS: 15 20 DH HB: 1.99 down-convertor CDMA: 18; FM: 6 LB: 0.894 SA602A mixer + 4.5 - 8.0 2.4 at6V8D0.500 oscillator SA612A mixer + 4.5 - 8.0 2.4 at6V8D0.500 oscillator RF Amplifiers SA5200 dual gain stage 4.0 - 9.0 4.2/95 µA(1) at5V8DDC - 1.2 (per amplif.) SA5204A wideband 5.0 - 8.0 25 at6V8DDC - 0.350 amp SA5205A wideband 5.0 - 8.0 25 at6V8DDC - 0.550 amp SA5209 variable gain 4.5 - 7.0 43 at5V16 D DC - 0.850 amp SA5219 variable gain 4.5 - 7.0 43 at5V16 D DC - 0.700 amp 1999 May 20 21,

Selection guide

GAIN NOISE INPUT 1dB INPUT OUTPUT POWER FIGURE IP3 COMP. IMPED. IMPED. FEATURES (dB) (dB) (dBm) (dBm) (Ω) (Ω) Mixer (fRF = 45 MHz) 11 9 LB: 6 should be open Ideal mixer for dual-band triple-mode 7(FM) 9 HB: 1 matched to collector1kphones LO PCS freq.doubler 11 9 LB: 6 should be open Ideal mixer for dual-band triple-mode 7(FM) 9 HB: 1 matched to collector1kphones Direct PCS LO in 17 5.0 −13 −25 1.5 k 1.5 k Excellent noise figure; high gain 17 5.0 −13 −25 1.5 k 1.5 k Excellent noise figure; high gain RF (FRG = 900 MHz for SA5200, 100 MHz for others) 7.5/13.5(1) 3.6 −1.8 +3.2 50 50 DC to 1.2 GHz; (per amplif.) power-down mode 19 6.0 (50 Ω) −2 +4 50 50 DC to 350 MHz 4.8 (75 Ω) 19 6.0 (50 Ω) −2 +4 50 50 DC to 550 MHz 4.8 (75 Ω) 25 (voltage) 9.3 +13 −3 1.2 60 DC to 850 MHz; (output) gain control pin 25 (voltage) 9.3 +13 −3 1.2 60 DC to 700 MHz; (output) gain control pin Notes 1. Amplifier: Enabled/Disabled. 2. Package Descriptions: D: = Small Outline (SO14/16/20) DK: = Shrink Small Outline Package (SSOP) BE: = Low Quad Flat Package (LQFP) DH: = Thin Shrink Small Outline Package (TSSOP). 3. Abbreviations: IRM: Image Reject Mixer LNA: Low Noise Amplifier DSH: Double Superheterodyne ZIF: zero IF diff: differential asym: asymmetrical. 4. Temperature range: SA types: −40 to +85 °C. 1999 May 20 22, 1999 May 20 23 DISCRETE FRONT-END SYSTEMS/MIXERS/AMPLIFIERS GAIN PACKAGE GAIN NOISE NOISE SYSTEM (dB) IC VCE FT (dB) AT 900 AT 1.9SOCKET FREQ. AT 1.9 (mA) (V) (GHz) AT 900 MHz GHz (MHz) GHz SOT23 SOT323 SOT343 (1) SOT353 SOT363 MHz(dB) (dB) (dB) (dB) LNA 900 3 4,5 17 20 1 22 1.6 BFG403W 900 & 1900 2 - 5 3 - 12 9 17 1.2 10 1.9 BFR505 BFS505 BFG505W BFC505 BFM505 900 & 1900 3 - 30 3 - 12 9 17 1.2 10 1.9 BFR520 BFS520 BFG520W BFC520 BFM520 900 & 1900 1 - 10 2 - 4.5 22 21 1.2 29 0.9 BFG410W 900 & 1900 3 - 25 2 - 4.5 22 20 1.2 28 0.8 BFG425W 900; 1900 250 4.5 21 1.2 1.8 BFG480W & 2400 PA 900 & 1800 200 4.5 18 10 BFG21W Mixer 900 5 - 30 3 - 10 6 13 1.9 BFR93A BFR93AW BFG93AW 900 & 1900 2 - 5 3 - 12 9 17 1.2 10 1.9 BFR505 BFS505 BFG505W BFE505 BFM505 900 & 1900 3 - 30 3 - 12 9 17 1.2 10 1.9 BFR520 BFS520 BFG520W BFE520 BFM520 900 & 1900 1 - 10 2 - 4.5 22 21 1.2 29 0.9 BFG410W 900 & 1900 3 - 25 2 - 4.5 22 20 1.2 28 0.8 BFG425W Buffer & 900 3 - 20 3 - 10 6 14 2.1 BFR92A BFR92AW VCO 900 5 - 30 3 - 10 6 13 1.9 BFR93A BFR93AW 900 & 1900 2 - 5 3 - 12 9 17 1.2 10 1.9 BFR505 BFS505 BFG505W BFC505 BFM505 900 & 1900 3 - 30 3 - 12 8 17 1.2 10 1.9 BFR520 BFS520 BFG520W BFC520 BFM520 900 & 1900 1 - 10 2 - 4.5 22 21 0.9 29 1.2 BFG410W 900 & 1900 3 - 25 2 - 4.5 22 20 0.8 28 1.2 BFG425W IF 40 - 100 3 - 20 3 - 12 1.2 20 dB gain at 100 MHz BF547 BF547W 100 - 250 3 - 20 3 - 8 2.8 25 dB gain at 250 MHz BFS17A BFS17W >250 3 - 20 3 - 10 5 25 dB gain at 500 MHz BFR92A BFR92AW Note 1. Typically the gain is 2 - 3 dB higher in SOT343 packages.,

Selection guide

dbook, full pagewidth LNA & Mixer (one device) IF BFM505 BFS17 BFM520 BFR92A

MIXER

LNA × IF LNA MIXER Buffer & VCO Buffer & VCO (one device) BFS505 BFR93A BFS520 BFS505 BFR92A BFC505 BFS520 BUFFER BFR93A BFC520 BFR93AW BFQ67 BFC505 BFG403W BFE505 BFS505 BFC520 BFG410W BFE520 BFS520 BFM505 BFG425W BFM505 BFS540 BFM520 BFG480W BFM520 VCO BFR93AW BGA2001 BFG410W BFG410W BGA2003 BFG425W BFG425W BFG480W BFG480W BGA2001 BGA2001 BGA2003 BGA2003 MSC965 Fig.1 Wireless receiver solutions. 1999 May 20 24, 1999 May 20 25 PIN DIODES

MAXIMUM

TYPE CHARACTERISTICS PACKAGE CONFIG

RATINGS

Rd Rd Cd Cd Cd I Vr If If = 0.5 mA If = 10 mA Vr = 0 V Vr = 5 V Vr = 20 V If = 10 mA (V) (mA) f = 100 MHz f = 100 MHz f = 1 MHz f = 1 MHz f = 1 MHz Ir = 6 mA (Ω) (Ω) (pF) (pF) (pF) (µs) BAP50-03 50 50 25 3 0.45 0.3 0.25 1.04 SOD323 single BAP50-04 50 50 25 3 0.45 0.3 0.25 1.04 SOT23 series BAP50-05 50 50 25 3 0.45 0.3 0.25 1.04 SOT23 common cathode BAP51-03 60 60 5.5 1.5 0.40 0.2 0.16 0.55 SOD323 single BAP64-02 200 100 20 2 0.52 0.27 0.23 1.55 SOD523 single BAP64-03 200 100 20 2 0.52 0.27 0.23 1.55 SOD323 single BAP64-04 200 100 20 2 0.52 0.27 0.23 1.55 SOT23 series BAP64-05 200 100 20 2 0.52 0.27 0.23 1.55 SOT23 common cathode FRONT-END MMICs VS IS NF GAIN IP3 @ PTYPE REMARKS 1 ENABLE(1) PACKAGE (V) (mA) (dB) (dB) (dBm) (GHz) (dB) BGA2001 amp 2.5 4 1.5 19(2) 2 - SOT 343R BGA2003 amp 2.5 10 1.9 19(2) +5 2 - x SOT 343R BGA2022(3) mixer (30 dB LO-RF3795(4) +5 0.8 to 1.9 - SOT363 isolation) BGA2031 variable-gain (55 dB) amp 3 50 - 25(5) −48(6) 1.9 12.5 x + control SOT551 Notes 1. On/off switch. 2. MSG. 3. Preliminary specification. 4. GC. 5. GP. 6. ACRP or DBc.,

Selection guide

IF SYSTEMS fRF = 45 MHz INPUT IF

V

TYPE CC ICC (mA) PINS Pkg FREQ. FREQ. INPUT(V) MIXER GAIN INPUT IP (GHz) (MHz) SENSITIVITY µ (dB) (dBm)( V) FM IF SA604A 4.5 - 8 3.3 mA at6V16 D 25 25 0.22(1) − − SA614A 4.5 - 8 3.3 mA at6V16 D 25 25 0.22(1) − − SA624 4.5 - 8 3.4 mA at6V16 D 25 25 0.22(1) − − Mixer/FM IF SA605 4.5 - 8 5.7 mA at6V20 D,DK 500 25 0.22 13 −10 SA615 4.5 - 8 5.7 mA at6V20 D,DK 500 25 0.22 13 −10 SA625 4.5 - 8 5.8 mA at6V20 D,DK 500 25 0.22 13 −10 Low-voltage mixer/FM IF SA606 2.7 - 7 3.5 mA at3V20 D,DK 150 2 0.31 17 −9 SA616 2.7 - 7 3.5 mA at3V20 D,DK 150 2 0.31 17 −9 SA676 2.7 - 5.5 3.5 mA at3V20 D,DK 100 2 0.45 17 −10 SA608 2.7 - 7 3.5 mA at3V20 D,DK 150 2 0.31 17 −9 SA626 2.7 - 5.5 6.5 mA at3V20 D,DK 500 25 0.54(2) 11(2) −16(2) SA636 2.7 - 5.5 6.5 mA at3V20 D,DK 500 25 0.54(2) 11(2) −16(2) SA639 2.7 - 5.5 8.5 mA at3V24 DH 500 25 2.24(3) 12(3) −12.5(4) Low Voltage mixer/Digital IF SA647 2.7 - 5.5 5.9 at3V20 DK 200 2 −112 dBm − −28 SA1630 2.7 - 5.5 Tx: 26.5; 48 BE 400 − − − − Rx: 33.5 at3VSA1638 2.7 - 5.5 Tx: 22; 48 BE 400 − − − − Rx: 18 at3V1999 May 20 26,

Selection guide

RSSI FREQ. IF FILTER FAST OUTPUT RANGE CHECK MATCH RSSI OP AMPS FEATURES (dB) PIN (kHz) FM IF 90 − − 455 − High Sensitivity 80 − − 455 − Wide IF BW 90 x − 455 − Mixer/FM IF 90 − − 455 − High Sensitivity 80 − − 455 − High Input Frequency 90 x − 455 − Low-voltage mixer/FM IF 90 − − 455 Audio op amp RSSI op amp High Sensitivity 80 − − 455 Audio op amp RSSI op amp Low Power 70 − − 455 Audio op amp RSSI op amp Audio op amp RSSI buffered 90 − x 455 Audio Buffered RSSI op amp Power-down mode (SA626/636/639) 90 x − 10700 Audio Buffered RSSI op amp 90 x − 10700 RSSI op amp 90 x − 10700 Audio buffered RSSI op amp Post-detect amp Data switch Low Voltage mixer/Digital IF 90 x − 455 RSSI op amp 90 x − 455 RSSI op amp − − − − − Wireless LAN using DSSS modulation; digital IF gain control of 70 dB in steps of 2 dB − − − − − GSM 900 MHz, DCS 1.8 GHz, quadrature up & down mixer stage Notes 1. Measured with a Philips MESA602A mixer prior to the IF input. 2. Measured at fRF = 240 MHz. 3. Measured at fRF = 110 MHz. 4. Represents the −3 dB input limiting point (dBm), Also shown in µV units into a 50 Ω matching network. Temperature range Package description IF filter match SA types: −40 to +85 °C. D: small outline. 455 kHz = 1.5k Ω. DK: shrink small outline package (SSOP). 10.7 MHz = 330 Ω. BE: low quad flat package (LQFP). 1999 May 20 27, 1999 May 20 28 SYNTHESIZERS/PRESCALERS MAX CHANNEL FRACTIONAL-N AUXILIARY TYPE VCC (V) ICC (mA) PINS PACKAGE RF/INPUT SPACING DIVIDER SYNTHE- APPLICATIONS FREQ. (GHz) (kHz) SIZER Fractional-N frequency synthesizers SA7016DH 2.7 - 5.5 6.2 at3V16 TSSOP16 1.3 − x − IS-54/-136, IS-95, PDC, (new) GSM digital cellular SA7025DK 2.7 - 5.5 7.5 at3V20 SSOP20 1.0 (main) − x x IS-54/-136, IS-95, PDC, 0.150 (aux) GSM digital cellular SA7026DH 2.7 - 5.5 7.5 at3V20 TSSOP20 1.3 (main) − x x IS-54/-136, IS-95, PDC, (new) 0.550 (aux) GSM digital cellular SA8016DH 2.7 - 5.5 8 at3V16 TSSOP16 2.5 − x − ISM-band, IS-54/-136, IS-95, (new) PDC, GSM digital cellular SA8025ADK 2.7 - 5.5 11 at3V20 SSOP20 1.8 (main) − x x PHS digital cordless, US 0.150 (aux) PCS, PDC digital cellular SA8026DH 2.7 - 5.5 10 at3V20 TSSOP20 2.5 (main) − x x ISM-band, IS-54/-136, IS-95, (new) 0.550 (aux) PDC, GSM digital cellular Frequency synthesizers UMA1015AM 2.7 - 5.5 at3V20 SSOP20 1.1 5 - 1000 − x (dual) AMPS, CT1, CT2, TACS UMA1021M 2.7 - 5.5 at 5.5 V 20 SSOP20 2.200 10 - 2000 − − GSM, DCS, PCS, DECT, PHS, WLL, WLAN UMA1021AM 2.7 - 5.5 at 5.5 V 16 SSOP16 2.200 10 - 2000 − − GSM, DCS, PCS, DECT, PHS, WLL, WLAN UMA1022M 2.7 - 5.5 at 5.5 V 20 SSOP20 2.100 (main) 10 - 2000 − x GSM, DCS, DECT, PHS, 0.550 (aux) WLL, WLAN Prescalers Max. Max input Input sensitivity Divide VCC (V) ICC (mA) Pins Package comparefrequency (dBm) ratio freq. (kHz) SA701D 2.7 - 6 4.5 at3V8SO8 1.1 65/270 −35 128/129, 64/65 SA702D 2.7 - 6 4.5 at3V8SO8 1.1 1000 −35 64/66/72, 1999 May 20 29 TRANSMITTER ICs FREQUENCY FREQUENCY I AT SUPPLY CC DIFFERENTIAL TRANSMIT RANGE: RANGE: FULL TYPE VOLTAGE OUTPUT OFFSET PACKAGE FEATURES OUTPUT SYNTHESIZER POWER (V) (dBm) FREQ. (MHz) (MHz) (MHz) (mA) Cellular SA900 820 - 860 (AMPS) N/A 4.5 - 5.1 42 (AMPS) 2 90 - 140 LQFP48 I/Q transmit RF 820 - 920 (cellular) 68 (dual) modulator with on-chip crystal osc. and VCO SA9025 824 - 849 (cellular) 500 - 2500 3.6 - 3.9 115 (analog) 10 90 - 180 LQFP48 Highly integrated I/Q 1840 - 1920 (PCS) 125 (digital) transmit with ext. up-conv. RF-modulator with 2.5 GHz dual synth. for 800 & 1900 triple-mode TDMA MMICS AMPLIFIERS FREQUENCY SUPPLY LOAD OUTPUT MIN. POWER TYPE EFFICIENCY BAND VOLTAGE POWER POWER GAIN PACKAGE FEATURES NUMBER (%) (GHz) (V) (W) (dBm) (dB) Cellular CGY2021G 1.71 - 1.785 4.8 3.2 34 34 55 LQFP48 GaAs MMIC, 2W DCS/PCS 1.85 - 1.91 power amplifier CGY2013 0.880 - 0.915 3.6 3.5 34.5 34 50 LQFP48 GaAs MMIC, GSM 4W power amplifier SA910 0.820 - 0.905 2.7 - 5.5 0.5 24 32 35 SSOP20 BiCMOS low-voltage, 900 MHz variable gain pre-amplifier Cordless CGY2030M 1.88 - 1.90 3.6 0.5 27 27 40 SSOP16 GaAs MMIC 500 mW amplifier CGY2032TS 1.88 - 1.90 3.6 0.5 27 27 50 SSOP16 GaAs MMIC 500 mW amplifier WLAN (ISM band) SA2410 2.4 - 2.5 3.0 - 5.5 18.5 29 25 TQFP32 2.5 GHz power amplifier and T/R switch for WLAN (ISM-band), 1999 May 20 30 POWER AMPLIFIER MODULES FREQUENCY SUPPLY MIN. LOAD DRIVE EFFICIENCY PACKAGE TYPE MIN. POWER BAND VOLTAGE POWER POWER MIN./TYP. PACKAGE THICKNESS NUMBER GAIN (dB) (MHz) (V) (W) (mW) (%) (mm) Digital cellular-GSM BGY241 880 - 915 3.53135 45 (min.) SOT482B 2 Digital cellular-DCS BGY212A(1) 1710 - 1785 3.5 2.4 (typ.) 10 33 45 (min.) SOT482B 1.6 BGY212B(2) 1850 - 1910 3.5 2.4 (typ.) 10 33 45 (min.) SOT482B 1.6 Dual band digital cellular (GSM900/DCS1800) BGY280(2) 880 - 915 3.5 4 10 35.5 50 SOT559 1.6 1710 - 1785 3.5 3 10 33 45 SOT559 1.6 Notes 1. Preliminary specification. 2. Objective specification., 1999 May 20 31 POWER TRANSISTORS MIN. EFFICIENCY THERMAL TYPE FREQUENCY SUPPLY VOLTAGE LOAD POWER POWER MIN./TYP. RESISTANCE PACKAGE NUMBER (GHz) (V) (W) GAIN (dB) (%) (K/W)(1) Analog cellular BLT80 900 7.5 0.8 6 60/67 22(2) SOT223 BLT81 900 7.5 1.2 6 60/70 32(3) SOT223 6.0 6.5 (typ.) 70 BLT70 900 4.8 0.6 6 60 55(4) SOT223 BLT71 900 4.8 1.2 6 60 24(5) SOT223 BLT71/8 900 4.8 1.2 11 55/63 40(6) SOT96 Digital cellular/cordless BFG21W 1900 3.6 0.4 11 50 SOT343 BFG540W 900 6 18 dBm 18 SOT343 BFG540W 1900 3.6 14 dBm 11 SOT343 BFG10W/x 900 6 28 dBm 10 SOT343 BFG10W/x 1900 3.6 20 dBm 6 SOT343 BFG11W/x 1900 3.6 26 dBm 6 SOT343 Recommended line-ups Supply voltage Load power Application 1st stage 2nd stage 3rd stage (V) (W) Analog 6.0 1.2 BFG540W/x BLT80 BLT81 4.8 1.2 BFG540W/x BLT70 BLT71 4.8 1.2 BFG10W/x BLT71/8 DECT, PHS 3.6 0.4 BFG540/x BFG10/x BFG11/x BFG540W/x BFG10W/x BFG11W/x BFG425W BFG21W Notes 1. Junction to soldering joint. 2. Ptot = 2W, Ts = 131 °C. 3. Ptot = 2W, Ts = 60 °C. 4. Ptot = 2.1W, Ts = 60 °C. 5. Ptot = 3.5W, Ts = 90 °C. 6. Ptot = 2.9W, Ts = 60 °C., 1999 May 20 32 BASEBAND PROCESSORSVITYPE PART TYPE APPLICATION DD DD PACKAGE (V) (mA) PCF50731 baseband & audio interface GSM/DCS/PCS 1.5 - 3.0 - LQFP64 P90CL301 16-bit low voltage microcontroller digital cellular 2.7 - 3.6 - LQFP80 PCF5077 power amplifier controller digital cellular 2.7 - 5.5 - SSOP16 PCF5078 power amplifier controller digital cellular 2.4 - 5.5 - TSSOP8 SFZ2003 baseband processor with PMU AMPS 2.7 - 3.3 10 typ. 0.7 (down mode) LQFP128 SFZ2002 8-bit low-voltage microcontroller AMPS 2.7 - 3.3 0.22mA/MHz active; LQFP80 83 µA/MHz idle PCD509XY baseband processor, ABC-pro DECT, ISDN 1.8 - 3.6 - LQFP80 PCD5096 universal codec DECT, ISDN 2.7 - 3.6 - QFP44 P8XCL883/4/6/7 TELX microcontroller CT0/900 MHz 2.7 - 3.6 - SO28 PCF5001 POCSAG decoder Paging 1.5 - 6.0 60 µA typ. SO28L, LQFP32 PCD5002A APOC1/POCSAG decoder Paging 1.5 - 6.0 25 µA typ. (OFF); LQFP32 50 µA typ. (ON) PCD5003A advanced POCSAG paging decoder Paging 1.5 - 6.0 25 µA typ. (OFF); LQFP32 50 µA typ. (ON) PCA5007 pager baseband controller for all signal standards Paging 0.9 - 1.6 50 µA typ. (stby); LQFP48 200 µA typ. (operating) PCD5008 FLEX decoder Paging 1.8 - 3.3 6.8 µA typ. LQFP32 PCD5013 FLEX decoder with roaming capability Paging 1.8 - 3.3 6.5 µA typ. LQFP32 PCA5010 pager baseband controller for all signal standards Paging 0.9 - 1.6 50 µA typ. (stby); LQFP48 200 µA typ. (operating), 1999 May 20 33 CALLER IDENTIFICATION

OPERATING

DTMF- FSK- TYPE VOLTAGE SPECIAL FEATURES PACKAGE MAX. SPEED (MHz) CATEGORY STANDARD STANDARD (V) PCD3316 no yes 2.5 - 3.6 Caller-ID decoder (level 2) SO16L 3.58 CIDCW PCD6002 see Table “DSP-based solutions for cordless” DSP-BASED SOLUTIONS FOR CORDLESS TYPE DESCRIPTIONS FEATURES/SPECIFICATIONS PACKAGE AM TAM MULTI-LINETAM Digital telephone answering machine (DTAM) and Universal Codec PCD6002 DTAM 80CL51 microcontroller, DSP, dual codecs, 32 kb microcontroller memory, caller-ID, full duplex QFP80xxxproduction IC speakerphone, IOM-2 bus interface PCD5096 Universal Codec Dual codecs, IOM-2 bus interface. Direct connection to PCD6002. QFP44 − − x TYP. VLN TYPE DESCRIPTIONS AT 15 mA PARALLEL TYP. IGGLOUD- TYP. CC (1) V(TX) V(RX) OPERATION (mA) PD (dB) (dB) SPEAKER ∆GV(AGC) PACKAGE AM TAM MULTI-LINE (V) AMP. (dB) TAM Programmable speech/transmission circuit PCA1070 fully 4.83 x 2.3 x 30 - 51 −25 - 11 − via DIP24, xxxprogrammable (at 12 mA) software SO24 line interface Line-interface ICs with improved EMC performance TEA1097 see Table “Line-interface ICs for cordless base stations” − x x UBA1707 x − − Note 1. PD = Power Down input; AM = Stand-alone Answering Machine; TAM = Telephone/Answering Machine., 1999 May 20 34 LINE-INTERFACE ICS FOR CORDLESS BASE STATIONS SUPPLY CURRENT LOUD- TYPE DETAILS VOLTAGE LINE-POWERED CONSUMPTION PD (1) SPEAKER Rx (2) HANDS- CORDEDOUT (V) (mA) AMPLIFIER FREE HANDSET

PACKAGE

TEA1097 Speech and loudspeaker 3.0 to 5.3(3); x 3.5(5); x x SEL − x VSO40 amplifier IC with auxiliary I/Os & 3.0 to 6.0(4) 5.5(6) QFP44 switches TEA1099 Speech and hands-free IC 3.0 to 5.3(3); x 4.0(5); x x SELxxQFP44 with auxiliary I/Os & switches 3.0 to 6.0(4) 6.0(6) UBA1706 Programmable line-interface 3.0 to 5.5 − 2.2 x − − − SSOP24 IC with electronic hook switch UBA1707 UBA1706 with loudspeaker 3.0 to 5.5 − 2.2xxSEL − − SO28, and microphone amplifiers SSOP28 Notes 1. Power Down input. 2. SEL = Single-Ended load. 3. Line-powered. 4. Mains-powered. 5. In speech mode. 6. In hands-free mode.,

Selection guide

FUNCTION PRODUCT OVERVIEW LNAs CGY2105/2106 Switches (synthesizers/gain) SWT0102 Synthesizers/VCOs UMA1021, SA8016 IF amplifiers SA5209 AD/DA converters TDA8768, TDA9901 Gain-controlled amplifiers SA5209, TDA9901 Modulators/upconverters MOD1327 PA drivers Double Polysilicon MMIC, CGY series PA controllers PCF5075 PA transistors/modules LDMOS BLF, BGY, BLV families Circulators/isolators Complete range for cellular and paging LDMOS POWER TRANSISTORS FOR BASE STATIONS MIN. FREQUENCY VDS PL (PED) MIN. GP IMD3TYPE EFFICIENCY (MHz) (V) (W) (dB) (dBc) (%) BLF1043 960 26 10 16 35 ≤30 BLF1046 960 26 45 13 35 ≤28 BLF1047 960 26 70 13 35 ≤28 BLF1048 960 26 90 13 35 ≤28 BLF2043 2000 26 10 13 30 ≤30 BLF2045 2000 26 30 10 30 ≤30 BLF2047 2000 26 70 10 30 ≤30 BLF2048 2000 26 140 10 30 ≤30 1999 May 20 35, 1999 May 20 36 RF POWER TRANSISTORS AND AMPLIFIERS FOR BASE STATIONS CLASS AB LOAD CLASS AB POWER INPUT POWER AT CLASS AB THERMAL RESISTANCE TYPE POWER VCE = 26 V GAIN AT GIVEN VCE GIVEN VCE EFFICIENCY (CW) (j − mb) PACKAGE (W) (dB) (W) (%) (K/W) 900 - 960 MHz bipolar RF power transistors BLV904 5 12 0.3 >50 14.6 (j − h) SOT409 BLV909 9 12 0.6 57 5.85 SOT409 BLV910 10 >11 0.8 >55 5.85 SOT171 BLV920 20 >10 2.0 >55 3.5 SOT171 BLV934 30 >9 3.8 >55 2.57 SOT171 BLV946 40 11 3.2 60 1.894 SOT273 BLV958 75 9.5 8.4 55 1.21 SOT391 BLV950 150 9 18.9 50 0.52 SOT262 1800 - 2000 MHz bipolar RF power transistors BLV2042 4 12 0.25 45 14.6 (j − h) SOT409B BLV2044 15 8 2.4 45 3.5 SOT437A BLV2045N 35 9.5 3.9 43 1.4 SOT390A BLV2046 50 ≥7.5 8.9 ≥40 0.9 SOT460A BLV2047 60 ≥8.5 8.5 ≥40 0.73 SOT468A BLV2048 120 >8 19.0 >40 0.35 SOT494A LOAD POWER POWER GAIN AT INPUT POWER AT EFFICIENCY (CW) LOAD IMPEDANCE TYPE VS = 26 V GIVEN VS GIVEN VS PACKAGE(%) (Ω) (W) (dB) (mW) 920 - 960 MHz RF base-station amplifier modulus BGY916 16 >28 25 >35 50 SOT365 BGY925 25 >28 50 >35 50 SOT365 1805 - 1881 MHz RF base station amplifier modulus BGY1816 16 >24 63 >35 50 SOT365A BGY1816S 16 >29 20 >35 50 SOT501A 1930 - 1990 MHz RF base-station amplifier modulus BGY1916 16 ≥24 63 >33 50 SOT365A, 1999 May 20 37 I2C-BUS I/O EXPANDERS FOR BASE STATIONS SUPPLY STANDBY 2 TYPE FUNCTION VOLTAGE CURRENT I C-BUS INTERRUPT CONFIGURATION ADDRESS POWER-ON (V) (µA) (kHz) RESET

PACKAGE

PCF8574 Remote 8 bit 2.5 - 6.0 10 100 yes slave 8 devices internal DIP16, I/O expansion via I2C-bus addressable SO16 or SSOP20 PCF8575 Remote 16 bit 2.5 - 5.5 400 yes slave 8 devices internal SSOP24 I/O expansion via I2C-bus addressable PCF8584 Parallel bus to I2C-bus 4.5 - 5.5 2.5 100 yes master/slave 7-bit address register external DIP20, protocol converter and written in during SO20 interface initialisation,

Selection guide

GSM/DCS/PCS ICs TYPE FUNCTION UAA2075 single-chip GSM transceiver UAA3520 single-chip3VGSM transceiver UAA3521 single-chip GSM closed-loop transceiver UAA3522 & UAA2077 GSM dual band with UAA2077 Tx modulation loop UAA3525 single-chip DCS/PCS transceiver TDA8002/03 SIM card interface TDA8004/05 SIM card interface TDA8006 UBA8070/71 power management unit (PMU) UBA8073 PMU with SIM card interface DC/DC converter UMA1021M low-voltage frequency synthesizer BGY240S power amplifier module CGY2013 MMIC power amplifier CGY2021 MMIC power amplifier UBA1710 modulator for GaAs power amplifier PCF5078 power amplifier controller for GSM P90CL301 low-voltage microcontroller PCF50731 GSM baseband and audio interface PCF50862 GSM baseband controller TEA1095 hands-free IC SA8026/16; SA7026/16 low-voltage 2.5 and 1.3 GHz fractional-N dual and single synthesizers TDMA RF ICs TYPE FUNCTION SA3600 dual-band RF front-end, low-voltage SA1920 dual-band RF front-end SA9025 dual-band RF transmitter/modulator with fractional-N dual synthesizer SA647 IF digital receiver, low-voltage SA611/631 low-voltage LNA and mixer - 1 GHz SA621 low-voltage LNA mixer and VCO SA8026/16; SA7026/16 low-voltage 2.5 and 1.3 GHz fractional-N dual and single synthesizers SA900 I/Q transmit modulator UBA8070/71 power management unit (PMU) 1999 May 20 38,

Selection guide

CDMA ICs TYPE FUNCTION SA9500 low-voltage dual-band down converter for CDMA/AMPS SA9502 low-voltage dual-band down converter for CDMA/AMPS SA8026/16; SA7026/16 low-voltage 2.5 and 1.3 GHz fractional-N dual and single synthesizers AMPS/(E)TACS ICs TYPE FUNCTION SA611 low-voltage LNA and mixer - 1 GHz SA616 low-voltage high-performance mixer FM IF system SA621 low-voltage LNA mixer and VCO SA910 pre-driver UMA1015AM low-power dual frequency synthesizer SZF2003 low-voltage baseband processor with PMU and DTMF detection SZF2002 8-bit low-voltage microcontroller with embedded RAM UMA1002 low-voltage data processor (DPROC) TDA7050 audio amplifier DECT ICs TYPE FUNCTION UAA2067G low-voltage 2 GHz RF transceiver UAA2068G PLL/VCO/doubler/modulator UAA3540TS fully integrated DECT receiver UAA2078 Zero-IF front-end UAA2079 Zero-IF filter/demodulator SA639 low-voltage mixer FM IF system with filter amplifier and data switch UMA1022M low-voltage frequency synthesizer CGY2032 low-voltage MMIC power amplifiers PCD5091/2/3/4 single-chip baseband processor PCD50912 ABC-Pro handset baseband controller PCD50917 PCD50922 ABC-Pro base unit baseband controller PCD50927 PCD50937 ABC-Pro baseband controller for ISDN base units PCD5096 universal CODEC TEA1097/99 featurephone ICs (base unit) UBA1706/07 programmable speech/transmission ICs 1999 May 20 39, 1999 May 20 40 TELX MICROCONTROLLERS (80CL51 CORE-BASED, OPTIMIZED FOR TELECOM) ROM RAM EEPROM OPERATING CATEGORYTYPE (kB) (B) (B) I/O VOLTAGE SPECIAL FEATURES PACKAGE MAX. SPEED(V) (MHz) P83CL881 63 2048 32 2.7 - 3.6 UART, 400 kbits/s I2C-bus, low-voltage detection LQFP44 10(1) TELX P87CL881 63 (OTP) 2048 32 2.7 - 3.6 OTP version of P83CL881 LQFP44 10(1) TELX P83CL883 8 256 18 2.7 - 3.6 UART, MSK modem, 400 kbits/s I2C-bus, DTMF, SO28 3.58(1)(2) TELX low-voltage det., In-System programming P87CL883 8 (OTP) 256 18 2.7 - 3.6 OTP version of P83CL883 SO28 3.58(1)(2) TELX P83CL884 8 256 128 18 2.7 - 3.6 Same as P83CL883 but with additional 256 bytes EEPROM SO28 3.58(1)(2) TELX P87CL884 8 (OTP) 256 128 18 2.7 - 3.6 OTP version of P83CL884 SO28 3.58(1)(2) TELX P83CL886 16 512 18 2.7 - 3.6 Same as P83CL883 but larger program memory size SO28 3.58(1)(2) TELX P87CL886 16 (OTP) 512 18 2.7 - 3.6 OTP version of P83CL886 SO28 3.58(1)(2) TELX P83CL887 12 512 18 2.7 - 3.6 Same as P83CL883 but larger program memory size SO28 3.58(1)(2) TELX P87CL887 12 (OTP) 512 18 2.7 - 3.6 OTP version of P83CL887 SO28 3.58(1)(2) TELX PCD6002 32 (OTP) 768 34 2.7 - 3.6 DTAM chip includes µC, DTMF, DSP and MSK modem, QFP80 3.58 DTAM PCD3316 2.5 - 3.6 CIDCW receiver SO16L 3.58 M/ CID 32 k(3) Notes 1. TELX core is twice as fast as standard 80C51, i.e. 10 MHz clock corresponds to 20 MHz clock on standard 80C51 with same performance. 2. For DTMF. 3. 2 crystals are required: one for RTC, the other to be shared with the microcontroller for DTMF generation.,

Selection guide

CT0 ICs TYPE FUNCTION UAA206x transceiver TELX microcontroller See Chapter “TELX microcontrollers (80CL51 core-based, optimized for telecom)” PCD3316 See Chapter “Caller identification” PCD6002 See Chapter “DSP-based solutions for cordless” TEA1118A Speech/transmission IC (base unit) TEA1097/99 Featurephone ICs (base unit) UBA1706/07 Programmable speech/transmission ICs (base unit) TDA7052A/AT1Wlow-voltage audio power amp with DC volume control PAGING ICs TYPE FUNCTION UAA2080 Advanced pager receiver UAA2082 Advanced pager receiver PCD5003A Advanced POCSAG paging decoder PCD5002A APOC1/POCSAG decoder PCF5001 POCSAG paging decoder P87CL881 Low-voltage microcontroller PCD5013 FLEXTM decoder PCA5007 Baseband decoder for all pager standards PCA5010 Baseband decoder for all pager standards UAA3500HL(1) Pager receiver for all bands (130 to 930 MHz) Note 1. Compatible with high- (FLEXTM, ERMES) and low-speed standards; available Q3, 1999. 1999 May 20 41,

Selection guide

WLAN ICs TYPE FUNCTION SA2410 GaAs power amplifier with transmit/receive switch SA2420 2.4 GHz transceiver RF front-end

DSSS

SA8016 Low-voltage 2.5 GHz fractional-N synthesizer with phase-detector comparison 5 - 8 x channel spacing UMA1021M Low-voltage conventional synthesizer with prescalers, programmable dividers and phase comparators SA1630 70 to 400 MHz IF I/Q transceiver

FDSS

SA8026 Dual low-voltage 2.5 GHz fractional-N synthesizer with phase-detector comparison 5 - 8 x channel spacing UMA1022M Dual low-voltage conventional synthesizer with prescalers, programmable dividers and phase comparators SA639 Low-voltage mixer FM IF system with filter amplifier GPS ICs TYPE FUNCTION UAA1570 Low-voltage, double-conversion, spread-spectrum radio receiver SAA1575 Baseband processor with embedded controller and GPS correlator 1999 May 20 42, 1999 May 20 43 DC/DC CONVERTER ICs TYPE TEA1204T TEA1205AT TEA1206T TEA1207T TEA1210TS

NUMB

ER Vin Vout Vin Vout Vin Vout Vin Vout Vin Vout Up conversion (V) 2.0 to 4.3 5.0 2.0 to 4.3 5.5 1.6 to 5 2.8 to 5.5 1.6 to 5 2.8 to 5.5 1.6 to 5 2.8 to 5.5 2.0 to 3.0 3.3 2.0 to 3.0 3.3 Down conversion (V) 3.6 to 5.0 3.6 not applicable 2.8 to 5.5 1.25 to 5.5 2.8 to 5.5 1.25 to 5.5 2.8 to 5.5 1.25 to 5.5 3.3 to 5.0 3.3 Synchronisation (MHz) not applicable 13 9 to 20 4 to 20 9 to 20 Max. output power (W): 3.25/8 3.25/8 3.25/12 2.75/7 5.75/14 continuous/pulsed Switches’ resistance (Ω) 0.15 0.15 0.15 0.22 0.055 Switch frequency (kHz) 200 200 560 275 590 Quiescent current (µA) 60 60 75 65 75 Package SO8 SO8 SO8 SO8 SSOP16, 1999 May 20 44 INTELLIGENT FAST-CHARGE ICs TYPE NUMBER TEA1104(T) TEA1100(T) TEA1101(T) TEA1103(T) TEA1102(T) Cell type NiCd, NiMH NiCd NiCd, NiMH NiCd, NiMH NiCd, NiMH, SLA, Li-Ion Fast charge −dV: <3 mV/cell −dV: <3 mV/cell −dV: <3 mV/cell −dV: <3 mV/cell, dT/dt −dV: <3 mV/cell, dT/dt termination Currentless yes yes yes yes yes sensing Charge profile fast charge, pulsating fast charge, pulsating fast charge, pulsating fast, top-off, pulsating NiCd, NiMH: fast, trickle trickle trickle trickle top-off pulsating trickle SLA, Li-Ion: fast, fill-up Charge current digital drive analog drive, PWM analog drive, PWM analog drive, PWM analog drive, PWM control drive, digital drive drive, digital drive drive, voltage regulation drive, voltage regulation Poss. fast charge 0.2 CA to 5 CA 0.2 CA to 5 CA 0.2 CA to 5 CA 0.2 CA to 5 CA 0.2 CA to 5 CA rates Possible trickle fast charge/40 CA/10 to CA/100 CA/10 to CA/100 0.15 CA (top-off) 0.15 CA (top-off) charge rates 0.03 CA (trickle) 0.03 CA (trickle) Charge with load no no no yes yes Refresh external circuitry external circuitry external circuitry integrated (manually integrated (manually activated) regulated activated) regulated discharge current discharge current User interface LEDs LEDs LEDs LEDs, buzzer, supports LEDs, buzzer, supports charge gauge function charge gauge function Protection open/short circuit, open/short circuit, open/short circuit, open/short circuit, open/short circuit, time-out, max. temp., time-out, max. temp., time-out, max. temp., time-out, max. temp., time-out, max. temp., min. temp. min. temp. min. temp. min. temp. min. temp. Package options DIL/SO8 DIL/SO16 DIL/SO16 DIL/SO/SSOP20 DIL/SO/SSOP20,

Selection guide

LITHIUM-ION CELL PROTECTION IC SAA1502A operating range (battery voltage) 3.6 to 4.3 V Max. charge voltage 17.5 V Integrated MOS transistors 60 mΩ Power-down current 0.1 µA Operating temp. range −25 to +80 °C Package SSOP16 Battery disconnection on: over discharge, over-charge, over-current (charge & discharge), high temperatures KEY TRANSISTORS FOR POWER MANAGEMENT

R

TYPE DS(ON) at VGS VDS VT ID Ω PACKAGE( ) (V) (V) (V) (A) N-channel PowerMOS - small SMD BHS110 0.017 2.5 20 >1.0 tbf TSSOP8 BHS109 0.04 2.5 20 >1.0 tbf TSOP6/SC74 (SOT457) BHS108 0.085 2.5 20 >1.0 tbf SOT23 BHS107 0.09 2.5 20 >0.4 2.50 TSOP6/SC74 (SOT457) BHS106 0.25 2.5 20 >0.4 1.43 SOT363/SC88 BHS105 0.25 2.5 20 >0.4 1.21 SOT23 BHS103 0.50 2.5 30 >0.4 0.86 SOT23 BHS102 0.40 10 30 >1.0 0.86 SOT23 BHS101 0.60 10 60 >1.0 0.70 SOT23 2N7002 4.0 10 60 >0.8 0.18 SOT23 N-channel PowerMOS - small SMD, dual channel BSH301 0.04 2.5 20 >0.4 5.0 TSSOP8 BSH302 0.2 2.5 20 >0.4 tbf TSOP6/SC74 (SOT457) BSH303 4 10 60 >1.0 tbf TSOP6/SC74 (SOT457) P-channel PowerMOS - Small SMD BSH209 0.04 2.5 12 >0.4 tbf TSSOP8 BSH207 0.15 2.5 12 >0.4 1.98 TSOP6/SC74 (SOT457) BSH208 0.175 2.5 12 >0.4 tbf SOT23 BSH205 0.5 2.5 12 >0.4 0.86 SOT23 BSH206 0.5 2.5 12 >0.4 1.01 SOT363/SC88 BSH203 1.1 2.5 30 >0.4 0.57 SOT23 BSH202 0.9 10 30 >1.0 0.57 SOT23 BSH201 2.5 10 60 >1.0 0.34 SOT23 BSS84 10 10 50 >0.8 0.13 SOT23 P-channel PowerMOS - Small SMD, dual channel BSH402 0.5 2.5 12 >0.4 tbf TSOP6/SC74 (SOT457) BSH403 0.01 10 50 >0.8 tbf TSOP6/SC74 (SOT457) 1999 May 20 45,

Selection guide

RDS(ON) at VGS VDS VT IDTYPE Ω PACKAGE( ) (V) (V) (V) (A) N-channel PowerMOS - larger SMD PHN1011 0.011 10 25 >1.0 11.0 SO8 PHN1013 0.0135 10 30 >1.0 10.0 SO8 PHN1015 0.014 10 25 >1.0 9.0 SO8 PHN1018 0.016 10 25 >1.0 8.7 SO8 PHN103 0.03 10 30 >1.0 8.5 SO8 N-channel PowerMOS - larger SMD, dual channel PHN203 0.03 10 25 >1.0 8.28 SO8 PHN205 0.05 10 30 >1.0 6.4 SO8 PHN210 0.1 10 30 >1.0 3.5 SO8 P-channel PowerMos - larger SMD PHP1025 0.025 2.5 12 >0.4 tbf SO8 PHP1035 0.035 10 25 >1.0 8.0 SO8 PHP109 0.09 10 30 >1.0 5.0 SO8 P-channel PowerMOS - larger SMD, dual channel PHP222 0.22 2.5 30 >0.4 1.93 SO8 PHP206 0.06 10 25 >1.0 5.6 SO8 PHP212 0.12 10 30 >1.0 4.0 SO8 PHP225 0.25 10 30 >1.0 2.3 SO8 N/P-channel PowerMOS - complementary pairs PHC20306 0.03/0.06 10 25 >1.0 8.2 SO8 PHC20512 0.05/0.12 10 30 >1.0 6.4 SO8 PHC21025 0.1/0.25 10 30 >1.0 3.5 SO8 N-channel PowerMOS with Schottky diode PHN103S 0.03 10 25 >1.0 6.0 SO8 1999 May 20 46, 1999 May 20 47 OVERVIEW OF LCD GRAPHIC AND CHARACTER DRIVERS MATRIX SIZE LOGIC LCD ON-CHIP TYPE ROWS COL (LINES × CHARS VOLTAGE VOLTAGE ON-CHIP VOLTAGE INTERFACE TEMP. PACKAGES XTAL/ OR MATRIX SIZE) RANGE VOP(MAX) BIAS GEN.(V) (V) MULTIPLIER COMP. BUMPS Character drivers PCF2116 16, 32 60 1 or 2 lines by 24 or 2.5 - 6.09xxI2C-bus and parallel LQFP128 x/x 4 lines by 12 4/8bit PCF2104 16, 32 60 1 or 2 lines by 24 or 2.5 - 6.09xI2C-bus and parallel x/x 4 lines by 12 4/8bit PCF2105 16, 32 60 1 or 2 lines by 24 or 2.5 - 6.09x400 kbits/s I2C-bus x/x 4 lines by 12 and parallel 4/8bit PCF2113 18 60 2 lines by 12 + icons 1.8 - 5.5 6.5xx400 kbits/s I2C-bus x LQFP100 x/x or 1 line by 24 + and parallel 4/8bit icons PCF2103 18 60 2 lines by 12 + icons 1.8 - 5.5 6.5 x 400 kbits/s I2C-bus x/x or 1 line by 24 + and parallel 4/8bit icons PCF2119 9, 18 80 1 line by 32 or 2 lines 1.5 - 4.0 6.5xx400 kbits/s I2C-bus x -/x slim chip by 16 + icons and parallel 4/8bit Graphic drivers PCF8531(1) 33 128 33 × 128 1.5 - 5.59xxxtray /x PCF8548(1) 65 102 65 × 102 1.5 - 5.59xxxtray /x PCF8558 40 101 40 × 101 2.5 - 6.09x400 kbits/s I2C-bus /x slim chip PCF8578 8, 16, 32, 24, any 2.5 - 6.0 9 I2C-bus VSO56, x/x 24, 32 16, 8 LQFP64 PCF8579 40 any 2.5 - 6.0 9 I2C-bus VSO56, x/x LQFP64 OM6202 65 102 65 × 102 2.5 - 3.3 16xxparallel x TCP /x PCF8549 65 102 65 × 102 1.5 - 6.0 16xx400 kbits/s; I2C-bus x tray /x OM6204 65 102 65 × 102 1.5 - 6.0 16xx400 kbits/s; I2C-bus x TCP /x Note 1. New., 1999 May 20 48 OVERVIEW OF LCD SEGMENT DRIVERS SEGMENTS AT MULTIPLEX RATE LOGIC LCD ON-CHIP TYPE VOLTAGE VOLTAGE BIASV VOLTAGE INTERFACE

SPECIAL

1 : 1 1 : 2 1 : 3 1 : 4 1 : 8 1 : 16 RANGE (V) OP(MAX) FEATURES PACKAGES XTAL/BUMPS (V) GENERATOR PCF8566 24 48 72 96 2.5 - 6.0 6.0 x I2C-bus cascadable with DIL40, /x (OM4085(1)) PCF8566/76(C) VSO40 PCF8576 40 80 120 160 2.5 - 9.0 9.0 x I2C-bus cascadable with VSO56, x/x PCF8576C 2.5 - 6.0 6.0 PCF8566/76(C) LQFP64 PCF8578 256 384 2.5 - 6.0 9.0 I2C-bus easy blinking, VSO56, x/x scratch pad LQFP64

RAM

OM4068 32 64 96 2.5 - 5.5 6.5 2 MHz serial cascadable QFP44, x/ DIP40 PCF8533(2) 80 160 240 320 2.5 - 5.5 6.5 x 400 Kbits/s cascadable up /x slim chip I2C-bus to 5120 Notes 1. VDD = 2.00 V. 2. New., 1999 May 20 49 OVERVIEW OF REAL-TIME CLOCK ICs 1/100th SEC & SUPPLY SUPPLY TYP. POWERTYPE I2C SEC TIMING M:h, D:m YRS/ PROG. PROG. LEAP YRS ALARM TIMER VOLTAGE VOLTAGE CONSUMPTION PACKAGEI2C-BUS (V) CLOCK (V) (STANDBY) PCF8573xxx2.5 - 6.0 1.1 - 6.0 3 µA at 1.5 V DIL16, SO16 PCF8583xxxxxx2.5 - 6.0 1.1 - 6.0 2 µA at 1.0 V DIL8, SO8L PCF8593xxxxxx2.5 - 6.0 1.1 - 6.0 1 µA at 2.0 V DIL8, SO8L PCF8563(1) xxxxx1.8 - 5.5 1.0 - 5.5 0.25 µA at1VDIL8, SO8, TSSOP8 Note 1. New - samples available. INTERRUPT SCRATCHPAD POWER FAIL EVENT POWER-ON SUPPLY SUPPLY TYP. POWERTYPE OUTPUT RAM DETECTOR COUNTER RESET VOLTAGE VOLTAGE CONSUMPTION PACKAGE(1 V RET) MODE (V) I2C-BUS (V) CLOCK (V) (STANDBY) PCF8573xx2.5 - 6.0 1.1 - 6.0 3 µA at 1.5 V DIL16, SO16 PCF8583 x 248 bytesxx2.5 - 6.0 1.1 - 6.0 2 µA at 1.0 V DIL8, SO8L PCF8593xxext. 2.5 - 6.0 1.1 - 6.0 1 µA at 2.0 V DIL8, SO8L PCF8563(1) xxx1.8 - 5.5 1.0 - 5.5 0.25 µA at1VDIL8, SO8, TSSOP8 Note 1. New - samples available. DIODES FOR WIRELESS TELEPHONY TYPE RANGE - SORTED BY PACKAGE TYPE SPECIFICATION DESCRIP-TION SOT23 SOD80 SC59/ SC70/ SC74/ SC75/ SC76/ SC79/ SC88/ SC89/ SOT346 SOT323 SOT457 SOT416 SOD323 SOD523 SOT490 SOT490 Zener diodes PZSM max. 40 W Zener diode BZX84 BZV55 PZM-N PDZ-B Ptot max. PMBZ series series 250 - 400 mW series Vz max 5.6 V ESD BZA456A protection array Vz max. 6.2 V ESD BZA462A protection array, 1999 May 20 50 TYPE RANGE - SORTED BY PACKAGE TYPE SPECIFICATION DESCRIP-TION SOT23 SOD80 SC59/ SC70/ SC74/ SC75/ SC76/ SC79/ SC88/ SC89/ SOT346 SOT323 SOT457 SOT416 SOD323 SOD523 SOT490 SOT490 Vz max. 6 - 8 V ESD BZA408B protection array Vz max. 20 V ESD BZA420A protection array Schottky diodes 25 V, medium 1PS74SB23 1000 mA power 30 V, small signal BAT54 1PS76SB10 1PS79SB10 1PS89SB14 200 mA 1PS89SB15 1PS89SB16 40 V, small signal BAS40 1PS75SB45 1PS76SB40 1PS88SB45 120 mA 40 V, small signal BAT721 1PS59SB21 1PS76SB21 200 mA 40 V, small signal BAT720 1PS59SB20 500 mA 40 V, medium PRLL5819 1000 mA power 70 V, small signal BAS70 1PS76SB70 1PS79SB70 70 mA Switching diodes 200 - 215 mA, high speed BAS16 BAS32L 1PS193 BAS16W BAS16T BAS316 BAS516 70 - 80 V switching series BAV99 1PS226 BAV99W connected BAV199 W1PS302 common BAV70 1PS184 BAV70W BAV70T BAV70S cathode 1PS301 BAV756S (BAV756S is CA/CC) common BAW56 1PS181 BAW56 BAW56T BAW56S anode 1PS300, 1999 May 20 51 LOW-FREQUENCY SMALL-SIGNAL TRANSISTORS FOR WIRELESS TELEPHONY MAX. POL. POLARITY TYPE RANGE - SORTED BY PACKAGE TYPE AND POWER (PTOT) RATING VCEO & I SOT23 SOT89/ SOT143/ SOT223/ SOT323/ SOT346/ SOT363/ SOT416/ SOT490/ OTHERC SC-62 SC-61 SC-73 SC-70 SC-59 SC-88 SC-75 SC-89 FEATURES 250 mW 1.2 W 250 mW 1.3 W 200 mW 250 mW 200 mW 150 mW 250 mW Breakthrough in small-signal transistors for extended battery life (very low VCEsat) 10 V, 3 A npn BDL31 Very low VCEsat = 180 mV (IC = 1 A; IB = 20 mA) 10 V, 3 A pnp BDL32 Very low VCEsat = 250 mV (IC = 1 A; IB = 20 mA) 40 V, 1 A npn PMMT491A Very low VCEsat < 300 mV (IC = 500 mA; IB = 50 mA) 40 V, 1 A pnp PMMT591A Very low VCEsat < 350 mV (IC = 500 mA; IB = 50 mA) 40 V, 5 A npn PBSS4540Z in development pnp PBSS5540Z 50 V, 2 A pnp PBSS5250X in development 50 V, 3 A npn PBSS4350X in development High speed switching transistors 15 V, npn PMBT2369 PZT2369A PMST2369 ton: 10 ns 100 mA (at 10 mA/3 mA/ −1.5 mA) 40 V, npn PMBT2222A PXT2222A PZT2222A PMST2222A ton: 35 ns 800 mA (at 150 mA/ 15 mA/−15 mA) 60 V, pnp PMBT2907A PXT2907A PZT2907A PMST2907A ton: 40 ns 600 mA (at −150 mA/ −15 mA/15 mA) Resistor-equipped transistors 50 V, pnp PDTA123ET R1/R2: 100 mA npn PDTC123ET 2.2 kΩ/2.2 kΩ 50 V, pnp PDTA143ET PDTA143EU PDTA143EK PDTA143EE R1/R2: 100 mA npn PDTC143ET PDTC143EU PDTC143EK PDTC143EE 4.7 kΩ/4.7 kΩ, 1999 May 20 52 MAX. POL. POLARITY TYPE RANGE - SORTED BY PACKAGE TYPE AND POWER (PTOT) RATING VCEO & I SOT23 SOT89/ SOT143/ SOT223/ SOT323/ SOT346/ SOT363/ SOT416/ SOT490/ OTHERC SC-62 SC-61 SC-73 SC-70 SC-59 SC-88 SC-75 SC-89 FEATURES 250 mW 1.2 W 250 mW 1.3 W 200 mW 250 mW 200 mW 150 mW 250 mW 50 V, pnp PDTA114ET PDTA114EU PDTA114EK PDTA114EE PDTA114EEF(2) R1/R2: 100 mA npnp PUMD3 10 kΩ/10 kΩ npn PDTC114ET PDTC114EU PDTC114EK PUMH11 PDTC114EE PDTC114EEF(2) 50 V, pnp PDTA124ET PDTA124EU PDTA124EK PDTA124EE R1/R2: 100 mA npnp PUMD2 22 kΩ/22 kΩ npn PDTC124ET PDTC124EU PDTC124EK PUMH1 PDTC124EE 50 V, pnp PDTA144ET PDTA144EU PDTA144EK PUMB2(2) PDTA144EE PDTA144EEF(2) R1/R2: 100 mA npnp PUMD12 47 kΩ/47 kΩ npn PDTC144ET PDTC144EU PDTC144EK PUMH6(2) PDTC144EE PDTC144EEF(2) 50 V, pnp PDTA123JT PDTA123JE PDTA123JEF(2) R1/R2: 100 mA npnp PUMD10 2.2 kΩ/47 kΩ npn PDTC123JT PDTC123JE PDTC123JEF(2) 50 V, pnp R1/R2: 100 mA npnp PUMD6 4.7 kΩ/open npn PDTC143TT PUMH7 50 V, pnp PDTA143XT PDTA143XE R1/R2: 100 mA npn PDTC143XT PDTC143XE 4.7 kΩ/10 kΩ 50 V, pnp PDTA143ZT PDTA143ZK R1/R2: 100 mA npn PDTC143ZT PDTC143ZK 4.7 kΩ/47 kΩ 50 V, pnp PDTA114TT PDTA114TU PDTA114TK PUMB4 R1/R2: 100 mA npn PDTC114TT PDTC114TU PDTA114TK PUMH4 PDTC114TE 10 kΩ/open 50 V, pnp PDTA114YT PDTC114YU PDTC114YE R1/R2: 100 mA npnp PUMD9 10 kΩ/47 kΩ npn PDTC114YT PUMH9(2) 50 V, pnp PDTA124XE PDTA124XEF(2) R1/R2: 100 mA npn PDTC124XE PDTC124XEF(2) 22 kΩ/47 kΩ 50 V, pnp PDTA144WU R1/R2: 100 mA npn PDTC114WT PDTC144WU 47 kΩ/22 kΩ, 1999 May 20 53 MAX. POL. POLARITY TYPE RANGE - SORTED BY PACKAGE TYPE AND POWER (PTOT) RATING VCEO & I SOT23 SOT89/ SOT143/ SOT223/ SOT323/ SOT346/ SOT363/ SOT416/ SOT490/ OTHERC SC-62 SC-61 SC-73 SC-70 SC-59 SC-88 SC-75 SC-89 FEATURES 250 mW 1.2 W 250 mW 1.3 W 200 mW 250 mW 200 mW 150 mW 250 mW Resistor-equipped transistor with two different resistor combinations 50 V, npnp PUMD48 For npn R1/R2: 100 mA 47 kΩ/47 kΩ For pnp R1/R2: 2.2 kΩ/47 kΩ High current transistors 20 V, 1 A pnp BC869 BCP69 npn BC868 BCP68 45 V, 1 A pnp BCP51 BCX51 npn BCP54 BCX54 60V1Apnp BCP52 BCX52 npn BCP55 BCX55 80 V, 1 A pnp BCP53 BCX53 npn BCP56 BCX56 High-voltage transistors 150 V, pnp PMBT5401 PZT5401 PMST5401 low 300 mA capacitance: CC < 6 pF 160 V, npn PMBT5550 PZT5551 PMST5550 low 300 mA capacitance: CC < 6 pF 300 V, pnp PMBTA92 PXTA92 PZTA92 PMSTA92 500 mA 300 V, npn PMBTA42 PXTA42 PZTA42 PMSTA42 500 mA 350 V, npn PZTA44 300 mA General purpose transistors 40 V, npn 2PC4081(1) 100 mA 40 V, pnp 2PA1576(1) 2PA1774(1) high 500 mA amplifications at high currents 45 V, pnp BC857 BC857W 2PB709A(1) BC857T BC857F 100 mA 45 V, npn BC847F 100 mA, 1999 May 20 54 MAX. POL. POLARITY TYPE RANGE - SORTED BY PACKAGE TYPE AND POWER (PTOT) RATING VCEO & I SOT23 SOT89/ SOT143/ SOT223/ SOT323/ SOT346/ SOT363/ SOT416/ SOT490/ OTHERC SC-62 SC-61 SC-73 SC-70 SC-59 SC-88 SC-75 SC-89 FEATURES 250 mW 1.2 W 250 mW 1.3 W 200 mW 250 mW 200 mW 150 mW 250 mW 45 V, pnp BC807 BC807W high 500 mA amplifications at high currents 45 V, npn BC817 BC817W high 500 mA amplifications at high currents 50 V, npn 2PD601A(1) 2PC4617(1) 100 mA 50 V, pnp 2PD602A high 500 mA amplifications at high currents 50 V, npn 2PB710A high 500 mA amplifications at high currents 65 V, pnp BC856 BC856W BC856T 100 mA 65 V, npn BC846 BC846W BC846T 100 mA General purpose transistor arrays T1/T2: pnp BCV62 current mirror 30 V/6 V, BCV64 Schmitt trigger 100 mA T1/T2: npn BCV61 current mirror 30 V/6 V, BCV63 Schmidt trigger 100 mA T1/T2: npn PUMX1 40 V, 100 mA T1/T2: pnp PUMT1 40 V, 100 mA T1/T2: pnpn PUMZ1 40 V, 100 mA T1/T2: pnp BC857BS tight hFE 45 V, matching 100 mA, 1999 May 20 55 MAX. POL. POLARITY TYPE RANGE - SORTED BY PACKAGE TYPE AND POWER (PTOT) RATING VCEO & I SOT23 SOT89/ SOT143/ SOT223/ SOT323/ SOT346/ SOT363/ SOT416/ SOT490/ OTHERC SC-62 SC-61 SC-73 SC-70 SC-59 SC-88 SC-75 SC-89 FEATURES 250 mW 1.2 W 250 mW 1.3 W 200 mW 250 mW 200 mW 150 mW 250 mW T1/T2: npn BC847BS tight hFE 45 V, matching 100 mA T1/T2: npnp BC847BPN tight hFE 45 V, matching 100 mA T1/T2: pnp BC846S in 65 V, BC856S 100 mA development Notes 1. Only available in tight DC current gain groups. 2. Release planned for Q2/1999., 1999 May 20 56 POWER MOSFETs, 20 V to 300 V N- and P-channel complementary multi-chip PACKAGE (SURFACE MOUNT) TYPICAL VDS RDS(ON) @VGS IDS Ω TSOP6 TSSOP8 SO8 SO24 SSOP24 APPLICATION(V) ( ) (V) (A) (SOT457) (SOT530) (SOT96) (SOT137) (SOT340) (see notes) 202x0.04 (N) + ESD 2.5 5 BSH301(6) 4 251x0.03/ 6 x 0.08 (N) 10 5 PHN70308 2 256x0.035 (MOS), 6 x 5A 10 8.3 PHN603S 5 Schottky 302x0.03 (N) 10 5.2 PHN203 2, 3 30 0.05 (N)/ 0.12 (P) 10 6.4 (N) / 4 (P) PHC20512 2, 4 30 0.1 (N)/ 0.25 (P) 10 3.5 (N) / 2.3 (P) PHC21025 2, 4 302x0.05(N) 10 6.4 PHN205 2, 4 302x0.1 (N) 10 3.5 PHN210 2, 4 302x0.12(P) 10 4 PHP212 2, 4 302x0.25(P) 10 2.3 PHP225 2, 4 502x10 (P) 10 0.19 BSH403 4 602x4(N) 10 0.29 BSH303 4 300 8 (N)/ 17 (P) 10 0.3 (N) / 0.2 (P) PHC2300 1 Notes 1. Telecom line switching protection. 2. Telecom power conversion. 3. Telecom DC-DC conversion. 4. Telecom power (battery) management. 5. Universal Serial Bus (USB). 6. In development., 1999 May 20 57 POWER MOSFETs, 12 V to 300 V P-channel single chip

PACKAGE TYPICAL

VDS RDS(ON) @VGS IDS SURFACE MOUNT LEADED Ω APPLICATION(V) ( ) (V) (A) SO8 TSOP6 TO-92 (see notes) SOT223 SOT23 SOT363 (SOT96) (SOT457) (SOT54) 12 0.15 2.5 1.98 BSH207 4 12 0.5 2.5 1.01 BSH206 4 12 0.5 2.5 0.86 BSH205 4 30 0.09 10 5.7 BSP090 2, 4 30 0.09 10 5 PHP109 2, 4 30 0.25 10 3 BSP250 2, 4 30 0.25 10 2.5 PHP125 2, 4 30 0.9 10 0.57 BSH202 4 30 1.1 2.5 0.57 BSH203 4 45 14 10 0.25 1, 2 50 10 10 0.13 BSS84 1, 2 60 2.5 10 0.34 BSH201 4 200 12 10 0.225 BSP220 1, 2 250 15 10 0.225 BSP225 1, 2 250 15 10 0.2 BSP254A 1, 2 300 17 10 0.21 BSP230 1, 2 300 17 10 0.17 BSP304A 1, 2 Notes 1. Telecom line switching protection. 2. Telecom power conversion. 3. Telecom DC-DC conversion. 4. Telecom power (battery) management.]

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