Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC09
DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification 1996 May 21 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 VC 3 VS APPLICATIONS 4 RF output • Digital cellular radio systems with Time Division Multiple Flange ground Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY204 is a four-stage UHF amplifier module in a SOT321B package. The module consists of four NPN silicon p...
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DATA SHEET BGY204 UHF amplifier moduleProduct specification 1996 May 21 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 VC 3 VS APPLICATIONS 4 RF output • Digital cellular radio systems with Time Division Multiple Flange ground Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range.
DESCRIPTIONThe BGY204 is a four-stage UHF amplifier module in a SOT321B package. The module consists of four NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. 1234Top view MSA489 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF f VS VC PL Gp η ZS; ZL OPERATION (MHz) (V) (V) (W) (dB) (%) (Ω) Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3.2 ≥35 typ. 45 50 1996 May 21 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS DC supply voltage PL = 0 − 8 V VC DC control voltage − 4.5 V PD input drive power − 2 mW PL load power VS ≤ 6.5 V; ZL = 50 Ω − 4 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C
CHARACTERISTICSZS = ZL = 50 Ω; PD = 1 mW; VS = 4.8 V; VC ≤ 3.5 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IQ leakage current VC = 0.5 V − − 0.2 mA IC control current adjust VC for PL = 3.2 W − − 0.5 mA PL load power 3.2 − − W Gp power gain adjust VC for PL = 3.2 W 35 − − dB η efficiency adjust VC for PL = 3.2 W 40 45 − % H2 second harmonic adjust VC for PL = 3.2 W − − −40 dBc H3 third harmonic adjust VC for PL = 3.2 W − − −40 dBc VSWRin input VSWR adjust VC for PL = 3.2 W − − 2.5 : 1 stability PD = 0.5 to 2 mW; VS = 4 to 6.5 V; − − −60 dBc VC = 0 to 3.5 V; PL ≤ 3.2 W; VSWR ≤ 6 : 1 through all phases; isolation VC = 0.5 V − − −36 dBm control bandwidth 1 − − MHz Pn noise power PL = 3.2 W; bandwidth = 30 kHz; − − −85 dBm 20 MHz above transmitter band ruggedness VS = 6.5 V; adjust VC for PL = 3.2 W; no degradation VSWR ≤ 10 : 1 through all phases 1996 May 21 3, MGD363 MGD364 40 40 handbook, halfpage
PPLL(dBm) (dBm) 880 MHz 915 MHz 915 MHz 880 MHz −20 −40 −20 1.0 1.5 2.0 2.5 3.0 3.5 −45 −35 −25 −15 −5 5 VC (V) PD (dBm) ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; VS = 4.8 V; adjust VC for PL = 3.2 W; Tmb = 25 °C.
Fig.2 Load power as a function of control voltage; Fig.3 Load power as a function of drive power;typical values. typical values. MGD365 MGD366 handbook, halfpage 50 η % 915 MHz 16 40 880 MHz 915 MHz 12 30 880 MHz 8 20 4 1000515 25 3501234PL (dBm) P L (W) ZS = ZL = 50 Ω; VS = 4.8 V; Tmb = 25 °C; Z = Z = 50 Ω; V input amplitude modulation = 3%. SLS= 4.8 V; Tmb = 25 °C.
Fig.4 Output amplitude modulation as a function Fig.5 Efficiency as a function of load power;of load power; typical values. typical values. 1996 May 21 4 output amplitude modulation (%), MGD367 MGD368 handbook, halfpage handbook, h 4alfpage −30 PL VCHH(W) 2, 3 (V) V (dBc)4C3−40 2 H2 −50
H231−6000−70 880 890 900 910 920 880 890 900 910 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; PL = 3.2 W; Tmb = 25 °C.
Fig.6 Load power as a function of frequency; Fig.7 Control voltage and harmonics as functionstypical values. of frequency; typical values. MGD369 MGD370 8 3.5 handbook, halfpage handbook, halfpage PL VC P (V) L = 35 dBm (W) VS = 6.5V63.0 30 dBm 4 4.8 V 2.5 20 dBm4V22.0 10 dBm 0 dBm 0 1.5 -40 0 40 80 −40 0 40 o 80 Tmb ( oC) Tmb ( C) ZS = ZL = 50 Ω; PD = 0 dBm; VC = 3.5 V; f = 900 MHz. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; f = 900 MHz.
Fig.8 Load power as a function of the mounting Fig.9 Control voltage as a function of mountingbase temperature; typical values. base temperature; typical values. 1996 May 21 5, MGD371 MGD372 25 25 handbook, halfpage handbook, halfpage Gv Gv 20 20 15 15 915 MHz 10 880 MHz 10 880 MHz 915 MHz550001230123f(MHz) f (MHz) PL = 30 dBm. PL = 25 dBm. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. Fig.10 Control loop voltage gain as a function of the Fig.11 Control loop voltage gain as a function of the frequency on the control pin; typical values. frequency on the control pin; typical values. MGD373 MGD374 25 25 handbook, halfpage handbook, halfpage Gv Gv 20 20 915 MHz 15 15 915 MHz 880 MHz 10 880 MHz 10550001230123f(MHz) f (MHz) PL = 20 dBm. PL = 15 dBm. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. Fig.12 Control loop voltage gain as a function of Fig.13 Control loop voltage gain as a function of frequency on the control pin; typical values. frequency on the control pin; typical values. 1996 May 21 6, handbook, full pagewidth C1 C2 Z1 R1 R2 L1 Z2 C3 C4 typ. 1.5 A RF VC VS RF input MGD375 output Fig.14 Test circuit. handbook, full pagewidth123450 Ω 50 Ω input outputVVMSA915C S Dimensions in mm. Fig.15 Printed-circuit board layout. 1996 May 21 7, List of components (See Fig.14) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor 680 pF − C3 tantalum capacitor 2.2 µF; 35 V − C4 electrolytic capacitor 47 µF; 40 V − L1 Grade 3B Ferroxcube bead 4330 030 36300 Z1, Z2 stripline; note 1 50 Ω − R1 metal film resistor 100 Ω; 0.4 W − R2 metal film resistor 5 Ω; 0.4 W − Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄16 inch. 1996 May 21 8,
SOLDERINGThe indicated temperatures are those at the solder interfaces. MLB740 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. Tmb ( o C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot 100 air oven, an infrared oven or a combination of these ovens. Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. 0 0 100 200 300 t (s) 400 The maximum temperature profile and soldering time is indicated as follows (see Fig.16): t = 350 s at 100 °C t = 300 s at 125 °C t = 200 s at 150 °C t = 100 s at 175 °C Fig.16 Maximum allowable temperature profile. t = 50 s at 200 °C t = 5 s at 250 °C (maximum temperature). Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Triclean B/S • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1996 May 21 9, PACKAGE OUTLINE handbook, full pagewidth 25.0 24.6 1.65 22.1 1.25 21.7 3.0 2.6 4.3 3.9 3.1 (4×) 2.9 5.1 13.4 4.9 13.0 2.4 1.2 MSA3972.21234min 0.55 (4×) 0.45 0.25 0.30 M 0.1 0.20 3.7 5.08 7.62 5.08 (4×) 3.3 Dimensions in mm. Fig.17 SOT321B. 1996 May 21 10,
DEFINITIONSData sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 21 11]
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Philips Semiconductors Discrete Amplifiers Selection guide 1997 Dec 18 32 DISCRETE AMPLIFIERS THERMAL SUPPLY POWER GAIN EFFICIENCY 3 TYPE FREQUENCY LOAD POWER RESISTANCE PACKAGE VOLTAGE (dB) (%) NUMBER (MHz) (W) (K/W) (V) MIN. MIN. TYP. ANALOG CELLULAR BLT80 900 7.5 0.8 6 60 67 224 SOT223 BLT81 900
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