Download: APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801

APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 2321SUMMARY This report gives information on the BLF246 as a linear amplifier at 28 MHz for S.S.B. signals. Typically the device produces an output power of 80 W P.E.P. at an I.M. distortion of −34 dB. At a supply voltage of 28 V the power gain is 20 dB and the 2-tone efficiency 40%. For the design of wideband amplifiers in the range of 1.5 − 30 MHz additional information is presented showing that the power gain drops to ...
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APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801,

CONTENTS

1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 23 2, 1 SUMMARY This report gives information on the BLF246 as a linear amplifier at 28 MHz for S.S.B. signals. Typically the device produces an output power of 80 W P.E.P. at an I.M. distortion of −34 dB. At a supply voltage of 28 V the power gain is 20 dB and the 2-tone efficiency 40%. For the design of wideband amplifiers in the range of 1.5 − 30 MHz additional information is presented showing that the power gain drops to appr. 19 dB with a variation of ±0.4 dB. 2 INTRODUCTION The BLF246 is an R.F. power MOS-transistor in SOT121 package specified at a frequency of 108 MHz and a supply voltage of 28 V for an output power of 80 W C.W. During the development period this device has also been tested in a class-AB amplifier at 28 MHz to investigate its behaviour as a linear amplifier for possible application in the H.F. band (1.5 − 30 MHz) with S.S.B. modulation. In that case the 3rd and 5th order intermodulation products are of special interest. 3 NARROW BAND TEST AT 28 MHz The R.F. circuit used for this purpose is depicted in Fig.1. The optimum drain quiescent current for linear operation of this device in class-AB in 0.6 A. This is achieved with a Vgs which is appr. 0.48 V higher than the specified Vgs(th). The output circuit has been aligned with a dummy load consisting of the parallel connection of a 3.5 Ω resistor and a 400 pF capacitor. This results in a load seen by the transistor of appr. 3.3 Ω with a negligible reactive part. The capacitors C9 and C10 are used to reduce the second harmonic voltage at the drain. In a wideband amplifier this is not necessary because the same effect is obtained by other means like a centre-tapped drain choke in a push-pull amplifier. The input circuit is aligned for minimum reflection at 50% of the maximum output power. The gate-source damping resistors R1 and R2 are needed for 2 reasons: 1. Stability i.e. to prevent oscillation when the output circuit is detuned 2. Low intermodulation distortion. In general it can be said that I.M. distortion is improved by lowering the value of these resistors. Of course they will influence the power gain of the amplifier. The average performance of the BLF246 in this amplifier is shown in Figs 2, 3, 4 and 5. At an output power of 80 W P.E.P. the average performance is: Gp = 20 dB Eff. = 40% (2-tone) d3 = −34 dB d5 = −42 dB. The distortion products have been measured with respect to one tone. It must be mentioned that the information given here is typical i.e. it is not guaranteed by measurements on individual transistors. 4 WIDEBAND OPERATION For operation in the H.F. range (1.5 − 30 MHz) it will be necessary to reduce the value of Rgs from 18 Ω as used in the narrow band amplifier down to 12 Ω to obtain a more constant power gain over the band and to achieve a smaller variation in the input impedance to allow an easier matching to a driver stage or a 50 Ω source. 1998 Mar 23 3, Table 2 shows the results of a computer calculation on this basis. It appears that the power gain is reduced by appr. 1 dB while the gain variation is then ±0.4 dB. The optimum load impedance is still appr. 3.3 Ω with a negligible reactive part. It must be mentioned that the figures given for power gain and input impedance include already the effects of an Rgs of 12 Ω. As mentioned earlier the lowering of Rgs has a positive effect on the intermodulation behaviour. For the design of a suitable wideband input matching network one is referred to application report nr. NCO8703. 5 ACKNOWLEDGEMENT The 28 MHz amplifier described in this report was designed and constructed by Mr. G. Lukkassen of our laboratory. He also made the various measurements. handbook, full pagewidth C9 C11 D.U.T. L3 L6 C13C3 output C1 L1 L2 50 Ω input 50 Ω C10 C14 C2 R1 R2 C5 L4 C12 C4 C6 R5 C7 R3 R4 L5 C8 + + MGM459VG VD Fig.1 BLF246 Testcircuit at 28 MHz. 1998 Mar 23 4, Table 1 PC-board: double Cu-clad, 1.6 mm PTFE fibre-glas dielectric (εr = 2.2) C1 = C4 6 to 80 pF film dielectric trimmer (cat.nr. 2222 809 07013) C2 62 pF multilayer ceramic chip capacitor; note 1 C3 150 pF multilayer ceramic chip capacitor; note 1 C5 = C6 100 nF multilayer ceramic chip capacitor (cat.nr. 2222 852 47104) C7 3 × 100 nF multilayer ceramic chip capacitor (cat.nr. 2222 852 47104) C8 2.2 µF electrolytic capacitor C9 = C10 = C14 75 pF multilayer ceramic chip capacitor; note 1 C11 100 pF multilayer ceramic chip capacitor; note 1 C12 = C13 7 to 100 pF film dielectric trimmer (cat.nr. 2222 809 07015) L1 184 nH 6 turns enamelled Cu-wire (0.7 mm), int.dia: 6 mm L2 = L3 41.1 Ω stripline (10 × 6 mm) L4 278 nH 7 turns enamelled Cu-wire (1.5 mm), int.dia: 8 mm L5 Ferroxcube h.f. coke, grade 3B (cat.nr. 4312 020 36642) L6 131 nH 4 turns enamelled Cu-wire (1.5 mm), int.dia: 8 mm R1 = R2 34.8 Ω metal film resistor (cat.nr. 2322 153 53489) R3 1 kΩ metal film resistor (cat.nr. 2322 151 71002) R4 1 MΩ metal film resistor (cat.nr. 2322 151 71005) R5 10 Ω metal film resistor (cat.nr. 2322 153 51009) Note 1. American Technical Ceramics type 100B or capacitor of same quality. 1998 Mar 23 5, MGM460 handbook, halfpage Gp (dB) 0 50 100 150 Po (W) PEP Conditions f = 28 MHz Idq = 0.6 A Th = 25 °C Vds = 28 V Rgs = 18 Ω Rth mb-h = 0.2 K/W Fig.2 Power gain versus output power. MGM461 handbook, halfpage η2t (%) 0 50 100 150 Po (W) PEP Conditions f = 28 MHz Idq = 0.6 A Th = 25 °C Vds = 28 V Rgs = 18 Ω Rth mb-h = 0.2 K/W Fig.3 2-tone efficiency versus output power. 1998 Mar 23 6, MGM462 handbook, halfpage Po (W) PEP 0 0.5 1 1.5 2 Pi (W) PEP Conditions f = 28 MHz Idq = 0.6 A Th = 25 °C Vds = 28 V Rgs = 18 Ω Rth mb-h = 0.2 K/W Fig.4 Output power versus drive power. MGM463 −20 handbook, halfpage d3, d5 (dB) d3 −30 d5 −40 −50 0 50 100 150 Po (W) PEP Conditions f = 28 MHz Idq = 0.6 A Th = 25 °C Vds = 28 V Rgs = 18 Ω Rth mb-h = 0.2 K/W Fig.5 Intermodulation distortion versus output power. 1998 Mar 23 7, Table 2 Power gain, input and load impedance versus frequency; Idq = 0.6 A; Rgs = 12 Ω BLF246 VDS = 28 V PO = 80 W P.E.P. Class-ABfGInp.Imp. Load Imp. MHz dBΩΩ1.5 19.57 11.97 − j0.51 3.34 + j0.01 5.0 19.54 11.71 − j1.67 3.34 + j0.02 10.0 19.47 10.92 − j3.06 3.33 + j0.04 15.0 19.35 9.86 − j4.03 3.32 + j0.07 20.0 19.20 8.75 − j4.59 3.31 + j0.09 25.0 19.00 7.72 − j4.84 3.30 + j0.11 30.0 18.77 6.83 − j4.86 3.28 + j0.13 1998 Mar 23 8,

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