Download: SIEGET®25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz
SIEGET®25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the following characteristics: Gain: 13.6 dB Noise Figure: 1.4 dB @ Frequency=2.4 GHz,Vce=2.5V,Ic=5mA Unconditionally stable at all frequencies In order to match the input and output ports, a well defined emitter inductance is used as negative feedback. This acts to stabilise the transistor, decreasing the usable gain. Without feedback the gain of the am...
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SIEGET®25 Low Noise Amplifier with BFP 420 Transistor
at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the following characteristics: Gain: 13.6 dB Noise Figure: 1.4 dB @ Frequency=2.4 GHz,Vce=2.5V,Ic=5mA Unconditionally stable at all frequencies In order to match the input and output ports, a well defined emitter inductance is used as negative feedback. This acts to stabilise the transistor, decreasing the usable gain. Without feedback the gain of the amplifier would be 17.5 dB, but matching and stability would be degraded. As the feedback is lossless, the amplifier noise figure would remain 1.4 dB. A double-transistor active stabilisation is used for DC biasing, which provides a temperature stable current source. Figure 1 shows the circuit diagram: T1 BFP420 RF IN RF OUT each: T2 T3 adjust for 5mA current Semiconductor Group 1 Edition A04, Figure 2 shows the circuit layout. Substrate material is PTFE, εr=2.45, H=0.38mm, e.g. Di-CLAD 527, 15mil Scale: 2:1 (40mm x 40mm real size): Figure 3 shows the part mounting plan: Semiconductor Group 2 Edition A04, Table 1 lists all used SMD components: Name Type, Package, (Supplier) C1 68pF 0805 (S+M) C2 1nF 0805 (S+M) C3 150pF 0805 (S+M) C4 150pF 0805 (S+M) C5 1nF 0805 (S+M) C6 10nF 0805 (S+M) R1 390Ω 0805 (S+M) R2 47Ω 0805 (S+M) R3 150kΩ 0805 (S+M) R4 0...100Ω Trimmer (Beckman) T1 BFP 420 SOT343 (Siemens) T2 BC 857B SOT23 (Siemens) T3 BC 857B SOT23 (Siemens) The following diagrams show power-gain, input- and output matching: Power gain over frequency: MS21/dB 6 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3 -2 f/GHz Semiconductor Group 3 Edition A04,Input-match: Output-match:
0 0 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 -1 -2 -2 -3 -4 -4 -6 MS11/dB -5 MS22/dB -8 -6 -7 -10 -8 -12 -9 -10 -14 f/GHz f/GHzMeasured noise figure:
f/GHz 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0F/dB 1.4 1.4 1.6 1.5 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.5 1.5 1.5 1.4 1.4 1.4 1.4 1.4 1.5 1.6 HL EH PD 1, Mattern / Bre
Published by Siemens AG, Bereich Bauelemente, Terms of delivery and rights to change design reserved. Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in © Siemens AG 1997. All Rights Reserved Germany or the Siemens Companies and Representatives world-wide (see address list). As far as patents or other rights of third parties are concerned, liability is only assumed for components per Due to technical requirements components may se, not for applications, processes and circuits contain dangerous substances. For information on the implemented within components or assemblies. type in question please contact your nearest Siemens Office, Semiconductor Group. The information describes the type of component and shall not be considered as assured characteristics. Siemens AG is an approved CECC manufacturer.Semiconductor Group 4 Edition A04
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